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    PF0141 Search Results

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    PF0141 Price and Stock

    TE Connectivity ZPF000000000014174

    Circular MIL Spec Tools, Hardware & Accessories DBASC 74-19
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    Mouser Electronics ZPF000000000014174
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    TE Connectivity ZPF000000000014183

    Rectangular MIL Spec Connectors DBASC 74-7
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    TE Connectivity ZPF000000000014196

    Rectangular MIL Spec Connectors DBASC 76-37
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    TE Connectivity ZPF000000000014151

    Circular MIL Spec Tools, Hardware & Accessories DBASC 70-3
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    TE Connectivity ZPF000000000014197

    Rectangular MIL Spec Connectors DBASC 76-37 A134
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    Mouser Electronics ZPF000000000014197
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    PF0141 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PF0141 Hitachi Semiconductor MOS FET Power Amplifier Module for GSM Handy Phone Scan PDF
    PF0141 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    PF01410 Hitachi Semiconductor MOS FET Power Amplifier Module for GSM Handy Phone Original PDF
    PF01410A Hitachi Semiconductor MOS FET Power Amplifier Module for GSM Handy Phone Original PDF
    PF01410A Renesas Technology MOS FET Power Amplifier Module for GSM Handy Phone Original PDF
    PF01411 Hitachi Semiconductor MOS FET Power Amplifier Module for E-GSM Handy Phone Original PDF
    PF01411A Hitachi Semiconductor MOS FET Power Amplifier Module for E-GSM Handy Phone Original PDF
    PF01411B Hitachi Semiconductor MOS FET Power Amplifier Module for E-GSM Handy Phone Original PDF
    PF01412 Hitachi Semiconductor MOS FET Power Amplifier Module for E-GSM Handy Phone Original PDF
    PF01412A Hitachi Semiconductor MOS FET Power Amplifier Module for E-GSM Handy Phone Original PDF
    PF01412A Renesas Technology MOS FET Power Amplifier Module for E-GSM Handy Phone Original PDF
    PF01419B Renesas Technology MOS FET Power Amplifier Module for E-GSM Handy Phone Original PDF

    PF0141 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Hitachi DSA0099

    Abstract: pf01411b
    Text: PF01411B MOS FET Power Amplifier Module for E-GSM Handy Phone ADE-208-434B Z 3rd Edition November 1, 1997 Application • For E-GSM class4 880 to 915 MHz • For 3.5 V nominal battery use Features • • • • High gain 3stage amplifier : 0 dBm input


    Original
    PF01411B ADE-208-434B D-85622 Hitachi DSA0099 pf01411b PDF

    PF01412A

    Abstract: Hitachi DSA00303
    Text: PF01412A MOS FET Power Amplifier Module for E-GSM Handy Phone ADE-208-477B Z 3rd Edition February 1997 Application • For GSM class4 890 to 915 MHz • For 5.5V nominal DC/DC converter use Features • • • • High gain 3stage amplifier : 0 dBm input


    Original
    PF01412A ADE-208-477B PF01412A Hitachi DSA00303 PDF

    PF01410A

    Abstract: Hitachi DSA00303
    Text: PF01410A MOS FET Power Amplifier Module for GSM Handy Phone ADE-208-424B Z Product Preview 3rd. Edition November 1997 Application • For GSM class4 890 to 915 MHz Features • • • • 4.8 V operation 2 stage amplifier Small package High efficiency : 45% Typ


    Original
    PF01410A ADE-208-424B PF01410A Hitachi DSA00303 PDF

    BLO1RN1-A62-001

    Abstract: PF01412A Hitachi DSA00231 BLO1RN1A
    Text: PF01412A MOS FET Power Amplifier Module for E-GSM Handy Phone ADE-208-477C Z 4th Edition Jan. 2001 Application • For GSM class4 890 MHz to 915 MHz • For 5.5 V nominal DC/DC converter use Features • • • • High gain 3stage amplifier : 0 dBm input


    Original
    PF01412A ADE-208-477C BLO1RN1-A62-001 PF01412A Hitachi DSA00231 BLO1RN1A PDF

    PF01411B

    Abstract: pf014 MOS FET Power Amplifier Module for E-GSM DSA003712
    Text: PF01411B MOS FET Power Amplifier Module for E-GSM Handy Phone ADE-208-434B Z 3rd Edition Nov. 1997 Application • For E-GSM class4 880 to 915 MHz • For 3.5 V nominal battery use Features • • • • High gain 3stage amplifier : 0 dBm input Lead less thin & Small package : 2 mm Max, 0.2cc


    Original
    PF01411B ADE-208-434B PF01411B pf014 MOS FET Power Amplifier Module for E-GSM DSA003712 PDF

    PF01410A

    Abstract: Hitachi DSA0099 T3845
    Text: PF01410A MOS FET Power Amplifier Module for GSM Handy Phone ADE-208-424B Z Product Preview, 3rd Edition November 1, 1997 Application • For GSM class4 890 to 915 MHz Features • • • • 4.8 V operation 2 stage amplifier Small package High efficiency : 45% Typ


    Original
    PF01410A ADE-208-424B D-85622 PF01410A Hitachi DSA0099 T3845 PDF

    PF01419B

    Abstract: Hitachi DSA0099
    Text: PF01419B MOS FET Power Amplifier Module for E-GSM Handy Phone ADE-208-686 Z 1st Edition Jan. 1, 1999 Application • For E-GSM class4 880 to 915 MHz • For 3.5 V nominal battery use Features • • • • High gain 3stage amplifier : 0 dBm input Lead less thin & Small package : 2 mm Max, 0.2cc


    Original
    PF01419B ADE-208-686 10onents PF01419B Hitachi DSA0099 PDF

    PF01411A

    Abstract: BLO1RN1-A62 Hitachi DSA00231
    Text: PF01411A MOS FET Power Amplifier Module for E-GSM Handy Phone ADE-208-433D Z 5th Edition Jan. 2001 Application • For E-GSM class4 880 MHz to 915 MHz • For 4.8 V nominal battery use Features • • • • High gain 3stage amplifier : 0 dBm input Lead less thin & Small package : 2 mm Max, 0.2cc


    Original
    PF01411A ADE-208-433D PF01411A BLO1RN1-A62 Hitachi DSA00231 PDF

    Hitachi DSA0099

    Abstract: PF01411A
    Text: PF01411A MOS FET Power Amplifier Module for E-GSM Handy Phone ADE-208-433C Z 4th. Edition February 1997 Application • For E-GSM class4 880 to 915MHz • For 4.8V nominal battery use Features • • • • High gain 3stage amplifier : 0dBm input Lead less thin & Small package : 2mm Max, 0.2cc


    Original
    PF01411A ADE-208-433C 915MHz D-85622 Hitachi DSA0099 PF01411A PDF

    Hitachi DSA0099

    Abstract: PF01412A ADE-208-477B
    Text: PF01412A MOS FET Power Amplifier Module for E-GSM Handy Phone ADE-208-477B Z 3rd Edition February 1, 1997 Application • For GSM class4 890 to 915 MHz • For 5.5V nominal DC/DC converter use Features • • • • High gain 3stage amplifier : 0 dBm input


    Original
    PF01412A ADE-208-477B D-85622 Hitachi DSA0099 PF01412A ADE-208-477B PDF

    PF01411A

    Abstract: pf014 Hitachi DSA00303
    Text: PF01411A MOS FET Power Amplifier Module for E-GSM Handy Phone ADE-208-433C Z 4th Edition February 1997 Application • For E-GSM class4 880 to 915 MHz • For 4.8V nominal battery use Features • • • • High gain 3stage amplifier : 0 dBm input Lead less thin & Small package : 2 mm Max, 0.2cc


    Original
    PF01411A ADE-208-433C PF01411A pf014 Hitachi DSA00303 PDF

    PF01410A

    Abstract: HITACHI RF EDITION BLO1RN1-A62-001 Hitachi DSA00231 BLO1RN1A
    Text: PF01410A MOS FET Power Amplifier Module for GSM Handy Phone ADE-208-424C Z 4th Edition Jan. 2001 Application • For GSM class4 890 MHz to 915 MHz Features • • • • 4.8 V operation 2stage amplifier Small package High efficiency : 45 % Typ High speed switching : 1 µsec


    Original
    PF01410A ADE-208-424C PF01410A HITACHI RF EDITION BLO1RN1-A62-001 Hitachi DSA00231 BLO1RN1A PDF

    PF01411B

    Abstract: PF01411 hitachi tantalum capacitor Hitachi DSA00231
    Text: PF01411B MOS FET Power Amplifier Module for E-GSM Handy Phone ADE-208-434C Z 4th Edition Jan. 2001 Application • For E-GSM class4 880 MHz to 915 MHz • For 3.5 V nominal battery use Features • • • • High gain 3stage amplifier : 0 dBm input Lead less thin & Small package : 2 mm Max, 0.2cc


    Original
    PF01411B ADE-208-434C PF01411B PF01411 hitachi tantalum capacitor Hitachi DSA00231 PDF

    7054F

    Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
    Text: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver


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    2sc4537 2sc454. 2sc4591 2sc4592 2sc4593 2sc460. 2sc4628 2sc4629 2sc4643 2sc4680 7054F BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557 PDF

    Untitled

    Abstract: No abstract text available
    Text: PF01419B MOS FET Power Amplifier Module for E-GSM Handy Phone HITACHI ADE-208-686 Z Ist Edition Jan. 1, 1999 Application • For E-GSM class4 880 to 915 MHz • For 3.5 V nominal battery use Features • High gain 3stage amplifier : 0 dBm input • Lead less thin & Small package : 2 mm Max, 0.2cc


    OCR Scan
    PF01419B ADE-208-686 RF-K01 PDF

    Untitled

    Abstract: No abstract text available
    Text: PF01411A MOS FET Power Amplifier Module for E-GSM Handy Phone HITACHI ADE-208-433C Z 4th. Edition February 1997 Application • For E-GSM class4 880 to 915MHz • For 4.8V nominal battery use Features • • • • High gain 3 stage amplifier : OdBm input


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    PF01411A ADE-208-433C 915MHz 20sec. PDF

    Untitled

    Abstract: No abstract text available
    Text: PF01411A MOS FET Power Amplifier Module for E-GSM Handy Phone HITACHI ADE-208-433C Z 4th. Edition February 1997 Application • For E-GSM class4 880 to 9 15MHz • For 4.8 V nominal battery use Features • • • • High gain 3stage amplifier : OdBm input


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    PF01411A 15MHz ADE-208-433C D-85622 PDF

    Untitled

    Abstract: No abstract text available
    Text: PF01411B MOS FET Power Amplifier Module for E-GSM Handy Phone HITACHI ADE-208-434B Z 3rd Edition November 1, 1997 Application • For E-GSM class4 880 to 915 MHz • For 3.5 V nominal battery use Features • High gain 3stage amplifier : 0 dBm input •


    OCR Scan
    PF01411B ADE-208-434B PDF

    Untitled

    Abstract: No abstract text available
    Text: PF01410A MOS FET Power Amplifier Module for GSM Handy Phone HITACHI ADE-208-424B Z Product Preview, 3rd Edition November 1, 1997 Application • For GSM class4 890 to 915 MHz Features • • • • 4.8 V operation 2 stage amplifier Small package High efficiency : 45% Typ


    OCR Scan
    PF01410A ADE-208-424B PDF

    Untitled

    Abstract: No abstract text available
    Text: PF01412A MOS FET Power Amplifier Module for E-GSM Handy Phone HITACHI ADE-208-477B Z 3rd Edition February 1, 1997 Application • For GSM class4 890 to 915 MHz • For 5.5V nominal DC/DC converter use Features • High gain 3stage amplifier : 0 dBm input


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    PF01412A ADE-208-477B PDF

    Untitled

    Abstract: No abstract text available
    Text: PF0141 - Product Preview MOS FET Power Amplifier Module for GSM Handy Phone • OUTLINE DRAWING For GSM CLASS 4 890 - 915 MHz ■ FEATURES • High % typ.


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    PF0141 PDF

    PF0131

    Abstract: PF0141 PF0144 PF0145 PF0148 PFS 3000 PF0310A PF0049A PF0147 PF0040
    Text: FET MODULE •High frequency amplifier Package Type No. cods RF-B2 PF0Q3Q PF0031 PF0032 PF0120 PF0121 PF0130 PF0131 PF0210 RF-B3 PF0040 PF0042 RF-E PFÓ02S PF0026 PF0027 PFQ04S PF0045A PF0047A PF0049A PFÖ065 PF0065A PF0O67A PF0144 PF0145 PF0146 PF0150 PF0231


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    PF0031 PF0032 PF0120 PF0121 PF0130 PF0131 PF0210 PF0040 PF0042 PF0026 PF0141 PF0144 PF0145 PF0148 PFS 3000 PF0310A PF0049A PF0147 PDF

    APC UPS es 500 CIRCUIT DIAGRAM

    Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
    Text: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.


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    ADE-408 50502C APC UPS es 500 CIRCUIT DIAGRAM sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212 PDF

    2sk1058 equivalent

    Abstract: MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297
    Text: JfHITACHI POWER TRANSISTORS 1 Contents Page 1. discrete and module devices New Degree of Freedom Hitachi's Power Transistors cover all field applications ranging from low to high frequ encies, also su itab le for fullautomated assembly processes such as surface-mount devices eg. UPAK, MPAK,


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    O220F SP-10 SP-12 SP-12TA 1560D 2sk1058 equivalent MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297 PDF