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Infineon Technologies AG IPF014N08NF2SATMA1 TRENCH 40<-<100V PG-TO263-7
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPF014N08NF2SATMA1	Cut Tape	911		1	1 $5.55 10 $3.706 100 $5.55 1000 $5.55 10000 $5.55	Buy Now
	IPF014N08NF2SATMA1	Digi-Reel	911		1	1 $5.55 10 $3.706 100 $5.55 1000 $5.55 10000 $5.55	Buy Now
	IPF014N08NF2SATMA1	Reel	800		800	1 - 10 - 100 - 1000 $2.192 10000 $2.192	Buy Now
Avnet Americas	IPF014N08NF2SATMA1	Reel	800	12 Weeks	1	1 $1.38123 10 $1.38123 100 $1.38123 1000 $1.38123 10000 $1.38123	Buy Now
Mouser Electronics	IPF014N08NF2SATMA1		740			1 $5.08 10 $3.48 100 $2.54 1000 $2.19 10000 $2.19	Buy Now
Newark	IPF014N08NF2SATMA1	Cut Tape	562		1	1 $5.29 10 $3.81 100 $2.94 1000 $2.94 10000 $2.94	Buy Now
Chip One Stop	IPF014N08NF2SATMA1	Cut Tape	800			1 $4.68 10 $3.4 100 $2.44 1000 $2.41 10000 $2.41	Buy Now

EBV Elektronik	IPF014N08NF2SATMA1			13 Weeks	800	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Advanced Thermal Solutions Inc ATS025025006-PF014 PINFIN HEATSINK 25X25X6.4MM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ATS025025006-PF014	Bulk	83		1	1 $2.71 10 $2.407 100 $2.1357 1000 $1.89432 10000 $1.74148	Buy Now
Avnet Americas	ATS025025006-PF014	Bulk		8 Weeks	100	1 - 10 - 100 $1.6758 1000 $1.6758 10000 $1.6758	Buy Now
Mouser Electronics	ATS025025006-PF014					1 $2.55 10 $2.48 100 $2.14 1000 $1.91 10000 $1.91	Get Quote
TE Connectivity ZPF000000000014608 Rectangular MIL Spec Connectors DCS 00 E 8-7 SN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	ZPF000000000014608					1 - 10 $769.32 100 $769.32 1000 $769.32 10000 $769.32	Get Quote
TE Connectivity ZPF000000000014201 Rectangular MIL Spec Connectors DBASC 76-61 A134
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	ZPF000000000014201					1 - 10 - 100 $167.16 1000 $167.16 10000 $167.16	Get Quote
TE Connectivity ZPF000000000014208 Rectangular MIL Spec Connectors DBASC 76-70-19
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	ZPF000000000014208					1 - 10 - 100 $212.63 1000 $212.63 10000 $212.63	Get Quote

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PF014 Datasheets (19)

Part	Manufacturer	Description	Datasheet Type	PDF
PF0140	Hitachi Semiconductor	Power Transistors Data Book	Scan	PDF
PF0140	Hitachi Semiconductor	12V 3A 20mW MOSFET power amplifier module for GSM handy phone	Scan	PDF
PF0140	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
PF0141	Hitachi Semiconductor	MOS FET Power Amplifier Module for GSM Handy Phone	Scan	PDF
PF0141	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
PF01410	Hitachi Semiconductor	MOS FET Power Amplifier Module for GSM Handy Phone	Original	PDF
PF01410A	Hitachi Semiconductor	MOS FET Power Amplifier Module for GSM Handy Phone	Original	PDF
PF01410A	Renesas Technology	MOS FET Power Amplifier Module for GSM Handy Phone	Original	PDF
PF01411	Hitachi Semiconductor	MOS FET Power Amplifier Module for E-GSM Handy Phone	Original	PDF
PF01411A	Hitachi Semiconductor	MOS FET Power Amplifier Module for E-GSM Handy Phone	Original	PDF
PF01411B	Hitachi Semiconductor	MOS FET Power Amplifier Module for E-GSM Handy Phone	Original	PDF
PF01412	Hitachi Semiconductor	MOS FET Power Amplifier Module for E-GSM Handy Phone	Original	PDF
PF01412A	Hitachi Semiconductor	MOS FET Power Amplifier Module for E-GSM Handy Phone	Original	PDF
PF01412A	Renesas Technology	MOS FET Power Amplifier Module for E-GSM Handy Phone	Original	PDF

PF01419B	Renesas Technology	MOS FET Power Amplifier Module for E-GSM Handy Phone	Original	PDF
PF0143	Hitachi Semiconductor	MOS FET Power Amplifier Module for GSM Handy Phone	Scan	PDF
PF0143	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
PF0146	Hitachi Semiconductor	MOS FET Power Amplifier Module for GSM Handy Phone	Original	PDF
PF0147	Hitachi Semiconductor	MOS FET Power Amplifier Module for GSM Handy Phone	Original	PDF

PF014 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Hitachi DSA0099 Abstract: pf01411b Text: PF01411B MOS FET Power Amplifier Module for E-GSM Handy Phone ADE-208-434B Z 3rd Edition November 1, 1997 Application • For E-GSM class4 880 to 915 MHz • For 3.5 V nominal battery use Features • • • • High gain 3stage amplifier : 0 dBm input	Original	PF01411B ADE-208-434B D-85622 Hitachi DSA0099 pf01411b	PDF
PF01412A Abstract: Hitachi DSA00303 Text: PF01412A MOS FET Power Amplifier Module for E-GSM Handy Phone ADE-208-477B Z 3rd Edition February 1997 Application • For GSM class4 890 to 915 MHz • For 5.5V nominal DC/DC converter use Features • • • • High gain 3stage amplifier : 0 dBm input	Original	PF01412A ADE-208-477B PF01412A Hitachi DSA00303	PDF
PF01410A Abstract: Hitachi DSA00303 Text: PF01410A MOS FET Power Amplifier Module for GSM Handy Phone ADE-208-424B Z Product Preview 3rd. Edition November 1997 Application • For GSM class4 890 to 915 MHz Features • • • • 4.8 V operation 2 stage amplifier Small package High efficiency : 45% Typ	Original	PF01410A ADE-208-424B PF01410A Hitachi DSA00303	PDF
pf0146 Abstract: 1SS106 pf014 vapc 1ss106 application note Hitachi DSA00313 Text: PF0146 MOS FET Power Amplifier Module for GSM Handy Phone ADE-208-285C Z 4th. Edition July 1996 Application For GSM class4 890 to 915 MHz Features • Small package: 1 cc, 3g • High efficiency: 50% Typ • High speed switching: 0.9 µsec Pin Arrangement	Original	PF0146 ADE-208-285C BLO1RN1-A62-001 pf0146 1SS106 pf014 vapc 1ss106 application note Hitachi DSA00313	PDF
BLO1RN1-A62-001 Abstract: PF01412A Hitachi DSA00231 BLO1RN1A Text: PF01412A MOS FET Power Amplifier Module for E-GSM Handy Phone ADE-208-477C Z 4th Edition Jan. 2001 Application • For GSM class4 890 MHz to 915 MHz • For 5.5 V nominal DC/DC converter use Features • • • • High gain 3stage amplifier : 0 dBm input	Original	PF01412A ADE-208-477C BLO1RN1-A62-001 PF01412A Hitachi DSA00231 BLO1RN1A	PDF
PF01411B Abstract: pf014 MOS FET Power Amplifier Module for E-GSM DSA003712 Text: PF01411B MOS FET Power Amplifier Module for E-GSM Handy Phone ADE-208-434B Z 3rd Edition Nov. 1997 Application • For E-GSM class4 880 to 915 MHz • For 3.5 V nominal battery use Features • • • • High gain 3stage amplifier : 0 dBm input Lead less thin & Small package : 2 mm Max, 0.2cc	Original	PF01411B ADE-208-434B PF01411B pf014 MOS FET Power Amplifier Module for E-GSM DSA003712	PDF
PF01410A Abstract: Hitachi DSA0099 T3845 Text: PF01410A MOS FET Power Amplifier Module for GSM Handy Phone ADE-208-424B Z Product Preview, 3rd Edition November 1, 1997 Application • For GSM class4 890 to 915 MHz Features • • • • 4.8 V operation 2 stage amplifier Small package High efficiency : 45% Typ	Original	PF01410A ADE-208-424B D-85622 PF01410A Hitachi DSA0099 T3845	PDF
PF01419B Abstract: Hitachi DSA0099 Text: PF01419B MOS FET Power Amplifier Module for E-GSM Handy Phone ADE-208-686 Z 1st Edition Jan. 1, 1999 Application • For E-GSM class4 880 to 915 MHz • For 3.5 V nominal battery use Features • • • • High gain 3stage amplifier : 0 dBm input Lead less thin & Small package : 2 mm Max, 0.2cc	Original	PF01419B ADE-208-686 10onents PF01419B Hitachi DSA0099	PDF
PF01411A Abstract: BLO1RN1-A62 Hitachi DSA00231 Text: PF01411A MOS FET Power Amplifier Module for E-GSM Handy Phone ADE-208-433D Z 5th Edition Jan. 2001 Application • For E-GSM class4 880 MHz to 915 MHz • For 4.8 V nominal battery use Features • • • • High gain 3stage amplifier : 0 dBm input Lead less thin & Small package : 2 mm Max, 0.2cc	Original	PF01411A ADE-208-433D PF01411A BLO1RN1-A62 Hitachi DSA00231	PDF
Hitachi DSA0099 Abstract: PF01411A Text: PF01411A MOS FET Power Amplifier Module for E-GSM Handy Phone ADE-208-433C Z 4th. Edition February 1997 Application • For E-GSM class4 880 to 915MHz • For 4.8V nominal battery use Features • • • • High gain 3stage amplifier : 0dBm input Lead less thin & Small package : 2mm Max, 0.2cc	Original	PF01411A ADE-208-433C 915MHz D-85622 Hitachi DSA0099 PF01411A	PDF
Hitachi DSA0099 Abstract: PF01412A ADE-208-477B Text: PF01412A MOS FET Power Amplifier Module for E-GSM Handy Phone ADE-208-477B Z 3rd Edition February 1, 1997 Application • For GSM class4 890 to 915 MHz • For 5.5V nominal DC/DC converter use Features • • • • High gain 3stage amplifier : 0 dBm input	Original	PF01412A ADE-208-477B D-85622 Hitachi DSA0099 PF01412A ADE-208-477B	PDF
Untitled Abstract: No abstract text available Text: PF01419B MOS FET Power Amplifier Module for E-GSM Handy Phone HITACHI ADE-208-686 Z Ist Edition Jan. 1, 1999 Application • For E-GSM class4 880 to 915 MHz • For 3.5 V nominal battery use Features • High gain 3stage amplifier : 0 dBm input • Lead less thin & Small package : 2 mm Max, 0.2cc	OCR Scan	PF01419B ADE-208-686 RF-K01	PDF
PF0143 Abstract: pf014 vapc Hitachi Scans-001 Text: PF0143- Product Preview MOS FET Power Amplifier Module for GSM Handy Phone For GSM CLASS 4 8 9 0 -9 1 5 MHz OUTLINE DRAWING • FEATURES • High % typ. • High Speed Switching. 0.9 ps typ.	OCR Scan	PF0143- 20sec. PF0143 pf014 vapc Hitachi Scans-001	PDF
PF0131 Abstract: PF0141 PF0144 PF0145 PF0148 PFS 3000 PF0310A PF0049A PF0147 PF0040 Text: FET MODULE •High frequency amplifier Package Type No. cods RF-B2 PF0Q3Q PF0031 PF0032 PF0120 PF0121 PF0130 PF0131 PF0210 RF-B3 PF0040 PF0042 RF-E PFÓ02S PF0026 PF0027 PFQ04S PF0045A PF0047A PF0049A PFÖ065 PF0065A PF0O67A PF0144 PF0145 PF0146 PF0150 PF0231	OCR Scan	PF0031 PF0032 PF0120 PF0121 PF0130 PF0131 PF0210 PF0040 PF0042 PF0026 PF0141 PF0144 PF0145 PF0148 PFS 3000 PF0310A PF0049A PF0147	PDF

Untitled Abstract: No abstract text available Text: PF01411A MOS FET Power Amplifier Module for E-GSM Handy Phone HITACHI ADE-208-433C Z 4th. Edition February 1997 Application • For E-GSM class4 880 to 915MHz • For 4.8V nominal battery use Features • • • • High gain 3 stage amplifier : OdBm input	OCR Scan	PF01411A ADE-208-433C 915MHz 20sec.	PDF
Untitled Abstract: No abstract text available Text: PF0143- Product Preview MOS FET Power Amplifier Module for GSM Handy Phone For GSM CLASS 4 8 9 0 -9 1 5 MHz OUTLINE DRAWING • FEATURES • High Efficiency. 40% typ. • High Speed Switching. 0.9	OCR Scan	PF0143--------------------------	PDF
Untitled Abstract: No abstract text available Text: PF01411A MOS FET Power Amplifier Module for E-GSM Handy Phone HITACHI ADE-208-433C Z 4th. Edition February 1997 Application • For E-GSM class4 880 to 9 15MHz • For 4.8 V nominal battery use Features • • • • High gain 3stage amplifier : OdBm input	OCR Scan	PF01411A 15MHz ADE-208-433C D-85622	PDF
PF0144 Abstract: 1ss106 application note 1SS106 Text: PF0144 MOS FET Power Amplifier Module for GSM Handy Phone HITACHI Application Product preview Rev. 0 Sep. 1993 Pin Arrangement For G S M class4 890 to 915 M H z Features • Sm all p ackage 1 cc, 3 g • H igh efficiency 45% Typ • H igh speed sw itching 0.9 ps T^p	OCR Scan	PF0144 PF0144 1ss106 application note 1SS106	PDF
PF0146 Abstract: No abstract text available Text: HITACHI PF0146 MOS FET Power Amplifier Module for GSM Handy Phone HITACHI Application For G SM class4 890 to 915 M H z Features • Sm all package: 1 cc, 3g • H igh efficiency: 50% Typ • H igh speed sw itching: 0.9 isec Pin Arrangement • R F -E 1 : Pin	OCR Scan	PF0146 ADE-208-285C PF0146	PDF
PF0146 Abstract: Power Amplifier Module for GSM Text: PF0146-MOS FET Power Amplifier Module for GSM Handy Phone Application Pin Arrangement For GSM class4 890 to 915 MHz Features • Small package: lcc, 3g • High efficiency: 50%typ • High speed switching: 0.9 us Typ Internal Diagram C1 =0.01	OCR Scan	PF0146----------------------MOS BL01RN1-A62-001 PF0146 PF0146 Power Amplifier Module for GSM	PDF
almit Abstract: GSM RF module Power Amplifier Module for GSM PF0140 3lu10 VA-PC 10 Text: H ITACH I PF0140 MOS FET Power Amplifier Module for GSM Handy Phone HITACHI ADE-208-462 Z 1st. Edition July 1996 Application For GSM class4 890 to 915 MHz Features • • • • Low power control current: 1.5 mA Typ High speed switching: 1.2 (Is Typ Wide power control range: 80 dB Typ	OCR Scan	PF0140 ADE-208-462 PF0140_ BL01RN1-A62-001 915MH almit GSM RF module Power Amplifier Module for GSM PF0140 3lu10 VA-PC 10	PDF
Untitled Abstract: No abstract text available Text: PF01411B MOS FET Power Amplifier Module for E-GSM Handy Phone HITACHI ADE-208-434B Z 3rd Edition November 1, 1997 Application • For E-GSM class4 880 to 915 MHz • For 3.5 V nominal battery use Features • High gain 3stage amplifier : 0 dBm input •	OCR Scan	PF01411B ADE-208-434B	PDF
Untitled Abstract: No abstract text available Text: PF01410A MOS FET Power Amplifier Module for GSM Handy Phone HITACHI ADE-208-424B Z Product Preview, 3rd Edition November 1, 1997 Application • For GSM class4 890 to 915 MHz Features • • • • 4.8 V operation 2 stage amplifier Small package High efficiency : 45% Typ	OCR Scan	PF01410A ADE-208-424B	PDF
almit Abstract: PF0140 Text: PF0140 MOS FET Power Amplifier Module for GSM Handy Phone HITACHI Application Rev. 0 Sep. 1993 Pin Arrangement For GSM class4 890 to 915 MHz Features • • • • Low power control current: 1.5 mA Typ High speed switching: 1.2 j s TVp Wide power control range: 80 dB Typ	OCR Scan	PF0140 PF0140 almit	PDF

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PF014 Price and Stock

Infineon Technologies AG IPF014N08NF2SATMA1

Advanced Thermal Solutions Inc ATS025025006-PF014

TE Connectivity ZPF000000000014608

TE Connectivity ZPF000000000014201

TE Connectivity ZPF000000000014208

PF014 Datasheets (19)

PF014 Datasheets Context Search

Hitachi DSA0099

PF01412A

PF01410A

pf0146

BLO1RN1-A62-001

PF01411B

PF01410A

PF01419B

PF01411A

Hitachi DSA0099

Hitachi DSA0099

Untitled

PF0143

PF0131

Untitled

Untitled

Untitled

PF0144

PF0146

PF0146

almit

Untitled

Untitled

almit