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    MARKING CODE ER TRANSISTOR Search Results

    MARKING CODE ER TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    MARKING CODE ER TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    marking code p07 sot89

    Abstract: marking code 3Fp P1M marking code sot 223 PDTC* MARKING CODE p04 sot223 FtZ MARKING CODE T07 marking P2F SOT23 marking t04 sot23 marking code P1F
    Text: MARKING CODES Page T y p e n u m b e r to m arking c o d e c ro s s re fe re n ce 68 M ark in g co d e to type n u m b er c ro s s re fe re n ce 74 Philips Semiconductors Small-signal Transistors Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER I MARKING


    OCR Scan     		2PA1576Q 2PA1576R 2PA1576S 2PA17 2PA1774R 2PA1774S 2PB709AQ 2PB709AR 2PB709AS 2PB710AQ marking code p07 sot89 marking code 3Fp P1M marking code sot 223 PDTC* MARKING CODE p04 sot223 FtZ MARKING CODE T07 marking P2F SOT23 marking t04 sot23 marking code P1F PDF

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC846ALT1 Series MARKING DIAGRAM 3 COLLECT OR xx M 1 B ASE xx 2 EMIT T ER M • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V 3 1 = Device Code = See Table = Date Code 2


    Original     		LBC846ALT1 LBC846 LBC847, LBC850 LBC848, LBC849 LBC846ALT1 OT-23 LBC846ALT1-4/5 PDF

    Untitled

    Abstract: No abstract text available
    Text: STD1408PI NPN Silicon Transistor Features • • • • PIN Connection Low sat urat ion swit ching applicat ion Power am plifier High Volt age : VCEO= 80V Min. Com plem ent t o STB1017PI 1 2 3 TO-220F-3L Ordering Information Type N O. M a r k in g Pa ck a ge Code


    Original     		STD1408PI STB1017PI O-220F-3L STD1408 SDB20D45 KSD-T0O111-000 PDF

    Untitled

    Abstract: No abstract text available
    Text: STC403 NPN Silicon Transistor Features • Power Transist or General Purpose applicat ion • Low sat urat ion volt age : VCE SAT = 0.4V Typ. • High Volt age : VCEO= 60V Min. PIN Connection 1 2 3 TO-220F-3L Ordering Information Type N O. M a r k ing Pa ck a ge Code


    Original     		STC403 O-220F-3L SDB20D45 KSD-T0O017-003 PDF

    Stc405

    Abstract: No abstract text available
    Text: STC405 NPN Silicon Transistor Features PIN Connection • Low sat urat ion swit ching applicat ion • Volt age regulat or applicat ion • High Volt age : VCEO= 60V Min. 1 2 3 TO-220F-3L Ordering Information Type N O. M a r k in g Pa ck a ge Code STC405 STC405


    Original     		STC405 O-220F-3L SDB20D45 KSD-T0O064-001 Stc405 PDF

    Untitled

    Abstract: No abstract text available
    Text: STB1017PI PNP Silicon Transistor Features • • • • PIN Connection Low sat urat ion swit ching applicat ion Power am plifier High Volt age : VCEO= - 80V Min. Com plem ent t o STD1408PI 1 2 3 TO-220F-3L Ordering Information Type N O. M a r k in g Pa ck a ge Code


    Original     		STB1017PI STD1408PI O-220F-3L STB1017 SDB20D45 KSD-T0O110-000 PDF

    Untitled

    Abstract: No abstract text available
    Text: STC603PI NPN Silicon Transistor Features • Power Transist or General Purpose applicat ion • Low sat urat ion volt age : VCE SAT = 0.4V Typ. • High Volt age : VCEO= 60V Min. PIN Connection 1 2 3 TO-220F-3L Ordering Information Type N O. M a r k ing


    Original     		STC603PI O-220F-3L STC603 SDB20D45 KSD-T0O114-000 PDF

    OPTOCOUPLER tl 521

    Abstract: P621 optocoupler optocoupler p621 all transistor P621 P626 Transistor transistor p621 optocoupler P 521 TLP639 P621 TOSHIBa transistor marking p6
    Text: 5 . Supplem entary Inform ations 5-1 C urrent Transfer Ratio CTR and Trigger LED C urrent (IFT) Ranking and M arking Stan d ard rank classifications are applied for the C T R on transistor-type photocouplers and for IFT on S C R , Triac-type photocouplers. Product indications corresponding to rank names are as show n below.


    OCR Scan     		TLP121 OPTOCOUPLER tl 521 P621 optocoupler optocoupler p621 all transistor P621 P626 Transistor transistor p621 optocoupler P 521 TLP639 P621 TOSHIBa transistor marking p6 PDF

    Untitled

    Abstract: No abstract text available
    Text: STA3360PI PNP Silicon Transistor Applications PIN Connection • Power am plifier applicat ion • High current swit ching applicat ion Features • Low sat urat ion volt age : VCE sat = - 0.15V Typ. @ I C= - 1A, I B= - 50m A • Large collect or current capacit y: I C= - 3A


    Original     		STA3360PI O-220F-3L STA3360 SDB20D45 KSD-T0O109-000 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA1980E PNP Silicon Transistor PIN Connection Description • General sm all signal am plifier Features 3 • Low collect or sat urat ion volt age : VCE sat = - 0.3V( Max.) • Low out put capacit ance : Cob = 4pF( Typ.) • Com plem ent ary pair wit h 2SC5343E


    Original     		2SA1980E 2SC5343E OT-523 KSD-T5E007-000 PDF

    Untitled

    Abstract: No abstract text available
    Text: STC2073D NPN Silicon Transistor Descriptions PIN Connection • General purpose am plifier • High volt age applicat ion Features • High collect or breakdown volt age : VCEO = 160V • Low collect or sat urat ion volt age : VCE sat = 0.5V( MAX.) TO-252


    Original     		STC2073D O-252 STC2073 KSD-T6O038-001 PDF

    SDB20D

    Abstract: No abstract text available
    Text: STD13005F NPN Silicon Power Transistor SWITCHING REGULATOR APPLICATIONS Features • High speed swit ching • VCEO sus = 400V • Suit able for Swit ching Regulat or and Mot or Cont rol PIN Connection C B Ordering Information Type N O. M a r k ing Pa ck a ge Code


    Original     		STD13005F STD13005 SDB20D45 KSD-T0O020-005 SDB20D PDF

    Untitled

    Abstract: No abstract text available
    Text: STD13005IS NPN Silicon Power Transistor SWITCHING REGULATOR APPLICATIONS Features • High speed swit ching  VCEO sus = 400V  Suit able for Swit ching Regulat or and Mot or Cont rol PIN Connection C B Ordering Information Type N O. M a r k ing Pa ck a ge Code


    Original     		STD13005IS STD13005I STD13005 KSD-T6Q012-001 PDF

    Untitled

    Abstract: No abstract text available
    Text: SUT390J Epitaxial planar NPN silicon transistor Description • Com plex t ype bipolar t ransist or Feature • Sm all package save PCB area • Reduce quant it y of part s and m ount ing cost • Two SBT3904 chips in SOT- 363 package Package : SOT-363 Ordering Information


    Original     		SUT390J SBT3904 OT-363 KSD-T5S009-002 PDF

    a5 TRANSISTOR

    Abstract: transistor T2S MARKING CODE ARF A5A marking transistor A5 MG11A marking code ER transistor
    Text: UM A5 N / FM A5A Transistors U M G 11N / F M G 11A I Digital Transistor Dual Digital Transistors for Inverter Driver UMA5N / FMA5A I Absolute maximum ratings (Ta=25'C) •Features 1 ) Tw o D T A 123J transistors are housed in a U M T o r S M T package. Parameter


    OCR Scan     		TaaB25 100MHz 94S-813-C123J) UMG11N a5 TRANSISTOR transistor T2S MARKING CODE ARF A5A marking transistor A5 MG11A marking code ER transistor PDF

    PPC5001T

    Abstract: PQC5001T
    Text: 7 - 3 3 'Q 5 PPC5001T PQC5001T P H ILIP S in t e r n a t io n a l •SbE D ■ 711002b D04bl+2E ISO IPHIN MICROWAVE POWER TRANSISTORS NPN silicon p ow er tra n sisto r fo r use in a co m m o n -co lle cto r o s c illa to r c ircu its in m ilita ry and professional applications.


    OCR Scan     		7-33-Q5 PPC5001T PQC5001T 711Dfl2b 004bi PQC5001T T-33-05 711002b PDF

    Untitled

    Abstract: No abstract text available
    Text: DN500 Semiconductor NPN Silicon Transistor Description • Ext rem ely low collect or- t o - em it t er sat urat ion volt age VC E( S A T = 0.2V Typ. @I C / I B = 3A/ 150m A) • Suit able for low volt age large current drivers • Com plem ent ary pair wit h DP500


    Original     		DN500 DP500 KST-9086-002 PDF

    Untitled

    Abstract: No abstract text available
    Text: DP500 Semiconductor PNP Silicon Transistor Description • Suit able for low volt age large current drivers • Excellent h FE Linearity • Com plem ent ary pair wit h DN500 • Switching Application Ordering Information Type N O. Marking Pa ck a ge Code


    Original     		DP500 DN500 KST-9091-003 -500m -150m PDF

    Untitled

    Abstract: No abstract text available
    Text: STD129 Semiconductor NPN Silicon Transistor Description • Ext rem ely low collect or- t o - em it t er sat urat ion volt age VC E( S A T = 0.2V Typ. @I C / I B = 3A/ 150m A) • Suit able for low volt age large current drivers • Switching Application


    Original     		STD129 KST-9060-001 PDF

    C3906K

    Abstract: C4102
    Text: 2SA1579 / 2SA1514K 2SC4102 / 2SC3906K Transistors I High-voltage Amplifier Transistor —120V, —50mA 2SA1579 / 2SA1514K + 0 A bsolute m axim um ratings ( 7 8 = 2 5 * 0 ) F e a tu r e s 1 ) High breakdown voltage. ( V c e o = — 120V) 2 ) C om plem ents the 2S C4102/2S C3906K.


    OCR Scan     		2SA1579 2SA1514K 2SC4102 2SC3906K --120V, --50mA) 2SA1514K C4102/2S C3906K C4102 PDF

    144T

    Abstract: No abstract text available
    Text: IMD8A IMD9A Transistors Digital Transistor Dual Digital Transistors for Inverter Drive IMD8A •F eatures 1 ) DTA144T and DTC144T transistors are housed in a SMT package. •A b s o lu te maximum ratings (Ta=25°C) Param eter •C irc u it schematic Symbol


    OCR Scan     		DTA144T DTC144T 200mW Ta--25 94S-904-AC 144T PDF

    marking 31A sot-23

    Abstract: marking 31A BFQ31 marking 31A sot BFQ31AR BFQ31R bf031a C5 marking code device marking code S4 SOT23 marking BH
    Text: FERRANTI * semiconductors BFQ31 BFQ31A NPN Silicon Planar V H F /U H F Transistors DESCRIPTION These devices are intended fo r lo w noise, high frequency am plifier and o scillator applications. Encapsulated in the popular SOT-23 package these devices are designed sp ecifically fo r use in thin and thick film


    OCR Scan     		BFQ31 BFQ31A OT-23 BFQ31/BFQ31A FMMT-A13 FMMT-A14 BCW67A FMMT-A20 BCW67B marking 31A sot-23 marking 31A marking 31A sot BFQ31AR BFQ31R bf031a C5 marking code device marking code S4 SOT23 marking BH PDF

    C5053

    Abstract: No abstract text available
    Text: 2SA1900 2SC5053 Transistors I Medium Power Transistor -5 0 V , — 1A 2SA1900 • Features ^Absolute maximum ratings (Ta=25"C ) 1 ) Low VcEisat). (Typ. —0.15V at 1c/! b = — 5 0 0 /—50m A) 2 ) Pc = 2W (CM 40 X 40 X 0.7 mm ceramic board.) 3 ) C om plem ents the 2S C5053.


    OCR Scan     		2SA1900 2SC5053 2SA1900 /--50m C5053. C5053 PDF

    PUMT1

    Abstract: No abstract text available
    Text: Philips Semiconductors Preliminary specification PNP general purpose double transistor FEATURES PUMT1 PINNING • Low curren t max. 100 mA PIN • Low voltage (max. 40 V) 1 ,4 e m itte r TR1 ; TR 2 2, 5 base TR1 ; TR 2 3, 6 co lle cto r TR2; TR1 • R educes num ber of com ponents and boardspace.


    OCR Scan     		SC-88; OT363 PUMT1 PDF