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    MARKING CODE FY* TRANSISTOR Search Results

    MARKING CODE FY* TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    MARKING CODE FY* TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFG 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fy = 8GHz F = 1 .3 d B at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    OCR Scan     		900MHz BFG193 Q62702-F1291 OT-223 235b05 Q12177D D1E1771 PDF

    transistor BC SERIES

    Abstract: BC848T TRANSISTOR BC 313 BC transistor series transistor Bc 580 846BT BC856T C847b transistor BC 312 BC847BT
    Text: Philips Semiconductors Preliminary specification NPN general purpose transistors BC846T; BC847T; BC848T series FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 65 V). DESCRIPTION 1 APPLICATIONS base 2 emitter 3 collector • General purpose sw itching and am plification, especially


    OCR Scan     		BC846T; BC847T; BC848T SC-75 BC856T, BC857T BC858T BC846AT 846BT BC847AT transistor BC SERIES TRANSISTOR BC 313 BC transistor series transistor Bc 580 BC856T C847b transistor BC 312 BC847BT PDF

    transistor top 222

    Abstract: SOT323 Marking LE transistor 222 MARKING BM
    Text: Philips Semiconductors Product specification NPN general purpose transistor 2PD1820A FEATURES PINNING • High current max. 500 mA PIN DESCRIPTION • Low voltage (max. 50 V) 1 base • Low collector-emitter saturation voltage (max. 600 mV). 2 emitter 3


    OCR Scan     		2PD1820A SC-70; OT323 2PB1219A. 2PD1820AQ 2PD1820AR 2PD1820AS OT323) transistor top 222 SOT323 Marking LE transistor 222 MARKING BM PDF

    tokin 473 5.5v

    Abstract: tokin fyh 5.5v tokin 473 0,47F, 5,5v, FYD 5,5v 473 220 microfarad 35v electrolytic capacitor tokin 0.47f 5.5v FR tokin 0,047F 5.5v FYD .047F tokin fyh 5.5v 0.47F
    Text: SUPERCAPACITOR WORLD WIDE WEB EC-200E SUPERCAPACITORS ELECTRIC DOUBLE-LAYER CAPACITORS Vol.02 CONTENTS TOKIN SUPERCAPACITORS / WORLD WIDE WEB ORGANIZATION OF SUPERCAPACITOR SERIES 3 BACKUP PERFORMANCE SELECTION 3 OPERATING PRINCIPLES 4 TYPICAL APPLICATIONS


    Original     		EC-200E tokin 473 5.5v tokin fyh 5.5v tokin 473 0,47F, 5,5v, FYD 5,5v 473 220 microfarad 35v electrolytic capacitor tokin 0.47f 5.5v FR tokin 0,047F 5.5v FYD .047F tokin fyh 5.5v 0.47F PDF

    marking code ACP transistor

    Abstract: marking code AAp BCW60C
    Text: Philips Semiconductors Product specification NPN general purpose transistors BCW60 series FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 32 V). 1 APPLICATIONS DESCRIPTION base 2 emitter 3 collector • General purpose switching and amplification.


    OCR Scan     		BCW61 BCW60A BCW60B BCW60C BCW60D BCW60 marking code ACP transistor marking code AAp PDF

    Untitled

    Abstract: No abstract text available
    Text: BCW60A/B/C/D NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Rating Unit Pc 32 32 5 100 350 Tstg 15 0 V V V mA mW °C Symbol Collector-Base Voltage Collector-Emitter Voltage VcBO Emitter-Base Voltage


    OCR Scan     		BCW60A/B/C/D BCW60D PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 135W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R ^ IO k fi, R2=47Ki2 _E L ÜJ Type Marking Ordering Code BCR 135W WJs n r Pin Configuration Q62702-C2287 1= B Package


    OCR Scan     		47Ki2) Q62702-C2287 OT-323 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCP 51M . BCP53M PNP Silicon AF Transistor • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP 54M.BCP 56M NPN Type Marking Ordering Code Pin Configuration BCP 51M


    OCR Scan     		BCP53M Q62702-C2592 Q62702-C2593 Q62702-C2594 SCT-595 6E35bOS 02BShD5 B35b05 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFG 196 NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA • Power amplifier for DECT and PCN systems • fy = 7.5GHz F = 1.5 dEJ at 900MHz


    OCR Scan     		900MHz BFG196 Q62702-F1292 OT-223 900MHz PDF

    MARKING CODE SMD IC T2B

    Abstract: SMD T2B sot23 marking code SMD MARKING CODE jt MARKING CODE SMD IC marking code d95 lg smd transistor marking code br SMD MARKING SMD IC CODE PMBTA05
    Text: 7110flEb 001^853 T2b • PHIN PMBTA05 PMBTA06 SILICON EPITAXIAL TRANSISTORS N-P-N transistors in a m icrom iniature SMD plastic envelope intended fo r surface mounted applications. They are prim arily intended fo r use in telephony and professional communication equipment.


    OCR Scan     		711002b cja53 PMBTA05 PMBTA06 PMBTA05 MARKING CODE SMD IC T2B SMD T2B sot23 marking code SMD MARKING CODE jt MARKING CODE SMD IC marking code d95 lg smd transistor marking code br SMD MARKING SMD IC CODE PDF

    TRANSISTOR SMD MARKING CODE JSs

    Abstract: smd JSs transistor TRANSISTOR SMD MARKING CODE DM TRANSISTOR SMD MARKING CODE pKX smd code pKX smd JSs SMD CODE TRANSISTOR JA smd transistor FY smd transistor marking PA 6 pin TRANSISTOR SMD CODE PA
    Text: Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT23 envelope. Designed for use as a Surface Mounted Device SMD in thin and thick-film circuits with


    OCR Scan     		PMBF170 TRANSISTOR SMD MARKING CODE JSs smd JSs transistor TRANSISTOR SMD MARKING CODE DM TRANSISTOR SMD MARKING CODE pKX smd code pKX smd JSs SMD CODE TRANSISTOR JA smd transistor FY smd transistor marking PA 6 pin TRANSISTOR SMD CODE PA PDF

    marking code AC sot 23-5

    Abstract: marking BFG
    Text: SIEMENS BFG 235 NPN Silicon RF Transistor • For low-distortion broadband output amplifier stages in antenna and telecommunications systems up to 2 GHz at collector currents from 120mA to 250mA • Power amplifiers for DECT and PCN systems • Integrated emitter ballast resistor


    OCR Scan     		120mA 250mA OT-223 BFG235 Q62702-F1432 900MHz marking code AC sot 23-5 marking BFG PDF

    transistor C 5611

    Abstract: 35 micro-X Package MARKING CODE Q
    Text: S IE M E N S BFY450 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For Medium Power Amplifiers • Compression Point P-idB =19dBm 1.8 GHz Max. Available Gain G m a = l6dB at 1.8 GHz • Hermetically sealed microwave package


    OCR Scan     		BFY450 19dBm 25-Line Transistor25 QS9000 transistor C 5611 35 micro-X Package MARKING CODE Q PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 48PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit •Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor NPN: R1 = 47ki2, R2 = 47k£2 PNP: R1 = 2.2k£ì, R2 = 47k£2


    OCR Scan     		47ki2, Q62702-C2496 OT-363 235LQ5 D12Qb7M BCR48PN D12Qb75 PDF

    TRANSISTOR t1p

    Abstract: marking t1p t1p TRANSISTOR
    Text: Philips Semiconductors Product specification NPN switching transistors FEATURES PMST2222; PMST2222A PINNING • High current max. 600 mA PIN • Low voltage (max. 40 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • High-speed switching and linear amplification.


    OCR Scan     		OT323 PMST2907A. PMST2222; PMST2222A PMST2222 OT323) PMST2222A TRANSISTOR t1p marking t1p t1p TRANSISTOR PDF

    smd transistor P2D

    Abstract: p2d smd smd code p2d PMBTA92 smd transistor marking PA MARKING CODE SMD IC smd P2D PMBTA93 P2d MARKING CODE
    Text: • bb53'ì31 □□2 Sa ciö 12Ö ■ APX N AMER PHILIPS/DISCRETE PMBTA92 PMBTA93 b?E T> SILICON EPITAXIAL TRANSISTORS P-N-P transistors in a m icrominiature SMD plastic envelope intended fo r surface mounted applications. They are prim arily intended fo r use in telephony and professional communication equipment.


    OCR Scan     		PMBTA92 PMBTA93 smd transistor P2D p2d smd smd code p2d smd transistor marking PA MARKING CODE SMD IC smd P2D PMBTA93 P2d MARKING CODE PDF

    Siemens A 1458

    Abstract: amplifier siemens sot-363
    Text: SIEMENS BFS 481 NPN Silicon RF Transistor • For low-noise, high-gain broadband amplifier at collector currents from 0.5 to 12 mA • fy ~ 8 GHz F = 1.4 dE5 at 900 MHz • Two galvanic internal isolated Transistors in one package I 91T I ETl KC2 II m Q62702-F1572


    OCR Scan     		Q62702-F1572 OT-363 IS21I2 900MHz Siemens A 1458 amplifier siemens sot-363 PDF

    BFR194

    Abstract: No abstract text available
    Text: SIEMENS BFR 194 PNP Silicon RF Transistor • For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA • Complementary type: BFR 106 NPN ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		Q62702-F1346 OT-23 15toimax BFR194 900MHz BFR194 PDF

    CM 1241 siemens

    Abstract: transistor b 1238 DECT siemens transistor bf 196 bfp196
    Text: SIEMENS BFP196 NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA • Power amplifier for DECT and PCN systems • fy = 7.5GHz F = 1.5 dE at 900MHz


    OCR Scan     		BFP196 900MHz Q62702-F1320 OT-143 900MHz CM 1241 siemens transistor b 1238 DECT siemens transistor bf 196 bfp196 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFP 81 NPN Silicon RF Transistor • For low-noise amplifiers up to 2GHz at collector currents from 0.5 mA to 20 mA. ESP: Electrostatic discharge sensitive device, observe handling precaution! Pin Configuration Marking Ordering Code Type Q62702-F1611


    OCR Scan     		Q62702-F1611 OT-143 0535bOS 900MHz fl235b05 PDF

    BFR183W

    Abstract: No abstract text available
    Text: SIEMENS BFR 183W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • f j = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code


    OCR Scan     		Q62702-F1493 OT-323 900MHz BFR183W PDF

    Untitled

    Abstract: No abstract text available
    Text: Supercapacitors FY Series Overview Applications FY Series Supercapacitors, also known as Electric DoubleLayer Capacitors EDLCs , are intended for high energy storage applications. Supercapacitors have characteristics ranging from traditional capacitors and batteries. As a result, supercapacitors can be


    Original     		PDF

    2222a sot23

    Abstract: 2222a bc 2222a FMMT2222A 50s MARKING CODE FMMT2222 FMMT2907 BCV72 BCW29 BFQ31
    Text: FERRANTI semiconductors FMMT2222 FMMT2222A N P N Silicon Planar General Purpose Sw itching Transistors DESCRIPTION These devices are intended fo r use in sm all and medium signal am plification applications from d.c. to radio frequencies. Com plem entary to the FM M T2907 series.


    OCR Scan     		FMMT2222 FMMT2222A FMMT2907 OT-23 FMMT2222A Co00/300 FMMT2369A 2222a sot23 2222a bc 2222a 50s MARKING CODE BCV72 BCW29 BFQ31 PDF

    bcb57b

    Abstract: BCB57 BC856B 3BP BC858 BC856 BC856A BC856B silicon planar epitaxial transistors BC857A BC857B
    Text: 7 1 1 G Ô E b Q O b ö H B ? 2b2 BC856 BC857 BC858 IPHIN SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistros, in a S O T-23 plastic package. Q U IC K R E F E R E N C E D A T A BC856 BC857 BC858 Col lector-emitter voltage + V g E = 1 V “ V C EX max. 80


    OCR Scan     		0DbflH37 BC856 BC857 BC858 OT-23 BC856 200/xA OT-23. bcb57b BCB57 BC856B 3BP BC856A BC856B silicon planar epitaxial transistors BC857A BC857B PDF