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    MARKING CODE RHS Search Results

    MARKING CODE RHS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54LS42/BEA Rochester Electronics LLC 54LS42 - DECODER, BCD-TO-DECIMAL - Dual marked (M38510/30703BEA) Visit Rochester Electronics LLC Buy
    5446/BEA Rochester Electronics LLC 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) Visit Rochester Electronics LLC Buy
    5447/BEA Rochester Electronics LLC 5447 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01007BEA) Visit Rochester Electronics LLC Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy

    MARKING CODE RHS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MARKING 68W SOT-23

    Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23
    Text: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06


    Original     		PDF 25-04W 25-05W 25-06W 25-07W 3904S 846AT 846BW 846BT 847AT 847BW MARKING 68W SOT-23 marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23

    transistor Bc 540

    Abstract: 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89
    Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BA 895 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 50-02V BAR 50-03W BAR 50-05 BAR 60 BAR 61 BAR 63 BAR 63-02V BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W


    Original     		PDF 0-02V 0-03W 3-02V 3-02W 3-03W 3-04W 3-05W 3-06W 4-02V 4-02W transistor Bc 540 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89

    transistor C639

    Abstract: c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor
    Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W BAR 63-05 BAR 63-05W BAR 63-06 BAR 63-06W


    Original     		PDF 3-02W 3-03W 3-04W 3-05W 3-06W 4-02W 4-03W 4-04W 4-05W 4-06W transistor C639 c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor

    1117G

    Abstract: Q62702-F1493 GMA marking IC456
    Text: BFR 183W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		PDF OT-323 Q62702-F1493 900MHz Dec-11-1996 1117G Q62702-F1493 GMA marking IC456

    Q62702-F1503

    Abstract: marking 17 sot343 ZL 58
    Text: BFP 183W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		PDF OT-343 Q62702-F1503 900MHz Dec-12-1996 Q62702-F1503 marking 17 sot343 ZL 58

    Q62702-F1594

    Abstract: transistor marking RHs
    Text: BFP 183R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		PDF OT-143R Q62702-F1594 900MHz Jan-21-1997 Q62702-F1594 transistor marking RHs

    Transistor BFR 14

    Abstract: Q62702-F1316 SIEMENS marking
    Text: BFR 183 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		PDF OT-23 Q62702-F1316 Dec-11-1996 Transistor BFR 14 Q62702-F1316 SIEMENS marking

    sot143 Marking code RHs

    Abstract: Q62702-F1382
    Text: BFP 183 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		PDF OT-143 Q62702-F1382 900MHz Dec-13-1996 sot143 Marking code RHs Q62702-F1382

    Untitled

    Abstract: No abstract text available
    Text: V ishay I n tertech n o l o g y, I n c . Capacitors - Radial Aluminum, Miniaturized, High-CV I INNOVAT AND TEC O L OGY 142 RHS N HN VISHAY BCcomponents O 19 62-2012 142 RHS Radial Aluminum Capacitors for High-Temperature Standard Applications Key Benefits


    Original     		PDF VMN-PT0171-1204

    SPICE 2G6

    Abstract: No abstract text available
    Text: BFP183R NPN Silicon RF Transistor  For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA  fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP183R RHs


    Original     		PDF BFP183R OT143R SPICE 2G6

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . 142 RHS M A L 2142.E3 KEY BENEFITS • Miniaturized, high-CV products per unit volume • Electronic circuits in industrial and SMPS products • Compliant to RoHS directive 2002/95/EC • Filtering of unwanted noise


    Original     		PDF 2002/95/EC 14tual VMN-PT0171-1007

    uf41

    Abstract: AT350V
    Text: RHS GREEN CAP 105˚C Use, Miniature, High-Ripple, Long Life Capacitors ● ● ● MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS 105˚C 5000hours Higher ripple current. Guarantees 4000 to 5000 hours at 105℃. Best-suited to electronic ballast. High ripple, Long life


    Original     		PDF 5000hours 120Hz) 1000Less 06CV40 03CV70 120Hz 2010/2011E uf41 AT350V

    142 RHS

    Abstract: No abstract text available
    Text: 142 RHS Vishay BCcomponents Aluminum Capacitors Radial High Temperature Standard FEATURES • Polarized aluminum electrolytic capacitors, non-solid electrolyte • Radial leads, cylindrical aluminum case, insulated with a blue sleeve • Pressure relief for case Ø D ≥ 6.3 mm


    Original     		PDF 2002/95/EC 18-Jul-08 142 RHS

    142 RHS

    Abstract: No abstract text available
    Text: 142 RHS Vishay BCcomponents Aluminum Capacitors Radial High Temperature Standard FEATURES • Polarized aluminum electrolytic capacitors, non-solid electrolyte • Radial leads, cylindrical aluminum case, insulated with a blue sleeve • Pressure relief for case Ø D ≥ 6.3 mm


    Original     		PDF 2002/95/EC 18-Jul-08 142 RHS

    c639

    Abstract: C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN
    Text: SIEMENS Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04


    OCR Scan     		PDF 3-03W 4-03W 5-03W OD-123 OD-323 OT-23 c639 C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN

    1s211

    Abstract: 2I k
    Text: SIEMENS BFP 183R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code


    OCR Scan     		PDF Q62702-F1594 OT-143R 900MHz 1S211 2I k

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFP183W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F= 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    OCR Scan     		PDF BFP183W Q62702-F1503 OT-343 fiE35bQ5 900MHz c15mA fl535b05

    BFR183W

    Abstract: No abstract text available
    Text: SIEMENS BFR 183W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • f j = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code


    OCR Scan     		PDF Q62702-F1493 OT-323 900MHz BFR183W

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFP 183 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code


    OCR Scan     		PDF Q62702-F1382 OT-143 235bQ5 BFP183 900MHz

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFR 183 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • /f = 8 GHz F = 1.2 dB at 900 MHz RHs Q62702-F1316 1= B li O BFR 183 CO ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF Q62702-F1316 OT-23 BFR183 900MHz

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFP183R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! BFP 183R RHs


    OCR Scan     		PDF BFP183R Q62702-F1594 OT-143R 76VBE 900MHz a535fc

    sot143 Marking code RHs

    Abstract: IC 1296
    Text: SIEMENS BFP 183 NPN Silicon RF T ransistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F = 1.2 dB at 900 MHz RHs Q62702-F1382 1=C m BFP 183 f\3 II ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF Q62702-F1382 OT-143 BFP183 900MHz sot143 Marking code RHs IC 1296

    Q62702-F1503

    Abstract: No abstract text available
    Text: SIEMENS BFP.183W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F = 1.2 dB at 900 MHz RHs Q62702-F1503 1 =E o BFP 183W N II ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF Q62702-F1503 OT-343 900MHz

    Untitled

    Abstract: No abstract text available
    Text: 6367251 MO T O R O L A SC MEMORY / AS I C j y T Q .R 0 L A S C iriE H O R Y /A S IC > * WlBmiïSÊBmâËSSÈItSfiB$$KE&RHsK!eBmiBmmam 65638 bM TZtt6 ~ 1 3 -/5 ' ° D E li7 3 b 7 2 S l M C M 0DbSâ3fl _) h 6 8 3 6 9 Advance Inform ation NMOS (N-CHANNEL, SILICON GATE)


    OCR Scan     		PDF MCM68369