BCW89
Abstract: H5 MARKING
Text: SEMICONDUCTOR BCW89 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 H5 1 2 Item Marking Description Device Mark H5 BCW89 hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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BCW89
OT-23
BCW89
H5 MARKING
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marking H2A sot-23
Abstract: MPS3904RLRA EIA 481 SOT363 H2B sot23 transistor 228 T3
Text: DL126TRS/D Tape & Reel and Packaging Specifications for Small-Signal Transistors, FETs and Diodes http://onsemi.com Excerpted from the ON Semiconductor Small–Signal Transistors, FETs and Diodes Device Data Book, DL126/D. Embossed Tape and Reel is used to facilitate automatic pick and place equipment feed requirements. The tape is used as the
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DL126TRS/D
DL126/D.
70/SOT
75/SOT
416/SC
88/SOT
marking H2A sot-23
MPS3904RLRA
EIA 481 SOT363
H2B sot23
transistor 228 T3
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free transistor equivalent book
Abstract: marking H2A sot-23 marking W2 sot363 H2B sot23 transistor number code book FREE
Text: DL126TRS/D Tape & Reel and Packaging Specifications for Small-Signal Transistors, FETs and Diodes http://onsemi.com Excerpted from the ON Semiconductor Small–Signal Transistors, FETs and Diodes Device Data Book, DL126/D. For the most current Tape & Reel information, please download BRD8011/D
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DL126TRS/D
DL126/D.
BRD8011/D
free transistor equivalent book
marking H2A sot-23
marking W2 sot363
H2B sot23
transistor number code book FREE
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ic 556
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA COLLECTOR 3 General Purpose Transistors 1 BASE 2 EMITTER COLLECTOR 3 1 BASE PNP BCX17LT1 BCX18LT1 NPN BCX19LT1 BCX20LT1 Voltage and current are negative for PNP transistors 2 EMITTER 3 1 2 CASE 318 – 08, STYLE 6 SOT– 23 TO – 236AB
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BCX17LT1
BCX18LT1
BCX19LT1
BCX20LT1
236AB)
BCX20LT1
BCX17LT1
ic 556
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor PNP Silicon BCW68GLT1 COLLECTOR 3 1 BASE 3 1 2 EMITTER 2 CASE 318 – 08, STYLE 6 SOT– 23 TO – 236AB MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –45 Vdc
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BCW68GLT1
236AB)
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EIA-468 label location
Abstract: W1 sot 363 MPS3904RLRA free transistor equivalent book MARKING W2 SOT23 sot353 transistor MARKING CODE LAYOUT G SOT89 marking W2 sot363
Text: DL126TRS/D Tape & Reel and Packaging Specifications for Small-Signal Transistors, FETs and Diodes http://onsemi.com Excerpted from the ON Semiconductor Small–Signal Transistors, FETs and Diodes Device Data Book, DL126/D. Embossed Tape and Reel is used to facilitate automatic pick and place equipment feed requirements. The tape is used as the
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DL126TRS/D
DL126/D.
70/SOT
75/SOT
416/SC
r14525
EIA-468 label location
W1 sot 363
MPS3904RLRA
free transistor equivalent book
MARKING W2 SOT23 sot353
transistor MARKING CODE LAYOUT G SOT89
marking W2 sot363
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marking H2A sot-23
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Chopper Transistor MMBT404ALT1 PNP Silicon COLLECTOR 3 Motorola Preferred Device 1 BASE 3 2 EMITTER 1 2 MAXIMUM RATINGS Rating CASE 318 – 08, STYLE 6 SOT– 23 TO – 236AB Symbol Value Unit Collector–Emitter Voltage
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MMBT404ALT1
236AB)
marking H2A sot-23
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBTH24LT1 VHF Mixer Transistor NPN Silicon Motorola Preferred Device COLLECTOR 3 • Designed for • fT = 400 MHz Min @ 8 mA 1 BASE 3 2 EMITTER 1 2 CASE 318-08, STYLE 6 SOT-23 TO-236AB MAXIMUM RATINGS Rating Symbol
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MMBTH24LT1
OT-23
O-236AB)
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JB MARKING SOT-23
Abstract: DELTA fan bfb
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBTH10LT1 VHF/UHF Transistor NPN Silicon COLLECTOR 3 Motorola Preferred Device 1 BASE 3 2 EMITTER 1 2 CASE 318-08, STYLE 6 SOT-23 TO-236AB MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 25
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MMBTH10LT1
OT-23
O-236AB)
JB MARKING SOT-23
DELTA fan bfb
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Transistor BSV52LT1 COLLECTOR 3 NPN Silicon 1 BASE 2 EMITTER 3 1 2 CASE 318 – 08, STYLE 6 SOT– 23 TO – 236AB MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 12 Vdc Collector – Base Voltage
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BSV52LT1
236AB)
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MARKING CODE 2l SC70-6
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor MMBT5401LT1 COLLECTOR 3 PNP Silicon Motorola Preferred Device 1 BASE 2 EMITTER 3 1 2 CASE 318 – 08, STYLE 6 SOT– 23 TO – 236AB MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage
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MMBT5401LT1
236AB)
MARKING CODE 2l SC70-6
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Untitled
Abstract: No abstract text available
Text: MC74HC1G04 Single Inverter The MC74HC1G04 is a high speed CMOS inverter fabricated with silicon gate CMOS technology. The internal circuit is composed of multiple stages, including a buffer output which provides high noise immunity and stable output. The MC74HC1G04 output drive current is 1/2 compared to
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MC74HC1G04
MC74HC1G04
MC74HC
MC74HC1G04/D
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MBD110DW
Abstract: MBD110DWT1 MBD330DW MBD330DWT1 MBD770DW MBD770DWT1 MMBD101LT1 MMBD301LT1 MMBD701LT1
Text: Dual SCHOTTKY Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT–363 package is a solution which simplifies circuit design, reduces device count, and reduces board space by putting two discrete devices in one small six–
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MBD110DWT1
MBD330DWT1
MBD770DWT1
MBD110
MBD110DW
MBD110DWT1
MBD330DW
MBD330DWT1
MBD770DW
MBD770DWT1
MMBD101LT1
MMBD301LT1
MMBD701LT1
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MBD-1102
Abstract: MBD330DWT1 MBD770DW MBD770DWT1 MMBD101LT1 MMBD301LT1 MMBD701LT1 MBD110DW MBD110DWT1 MBD330DW
Text: LESHAN RADIO COMPANY, LTD. Dual SCHOTTKY Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT–363 package is a solution which simplifies circuit design, reduces device count, and
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MBD110DWT1
MBD330DWT1
MBD770DWT1
MBD110
MBD-1102
MBD330DWT1
MBD770DW
MBD770DWT1
MMBD101LT1
MMBD301LT1
MMBD701LT1
MBD110DW
MBD110DWT1
MBD330DW
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transistor D 2395
Abstract: Motorola 2396
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBTA13LT1 MMBTA14LT1* Darlington Amplifier Transistors NPN Silicon *Motorola Preferred Device COLLECTOR 3 BASE 1 3 1 EMITTER 2 2 CASE 318 – 08, STYLE 6 SOT– 23 TO – 236AB MAXIMUM RATINGS Rating Symbol Value Unit
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MMBTA13LT1
MMBTA14LT1*
236AB)
transistor D 2395
Motorola 2396
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marking td sot323
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor MMBT6520LT1 PNP Silicon COLLECTOR 3 Motorola Preferred Device 1 BASE 3 2 EMITTER 1 2 CASE 318 – 08, STYLE 6 SOT– 23 TO – 236AB MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage
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MMBT6520LT1
236AB)
marking td sot323
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Untitled
Abstract: No abstract text available
Text: MC74HC1G04 Single Inverter The MC74HC1G04 is a high speed CMOS inverter fabricated with silicon gate CMOS technology. The internal circuit is composed of multiple stages, including a buffer output which provides high noise immunity and stable output. The MC74HC1G04 output drive current is 1/2 compared to
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MC74HC1G04
MC74HC
SC70-5/SC-88A/SOT-353
MC74HC1G04/D
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Untitled
Abstract: No abstract text available
Text: MC74HC1G04 Single Inverter The MC74HC1G04 is a high speed CMOS inverter fabricated with silicon gate CMOS technology. The internal circuit is composed of multiple stages, including a buffer output which provides high noise immunity and stable output. The MC74HC1G04 output drive current is 1/2 compared to
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MC74HC1G04
MC74HC1G04
MC74HC
SC70in
MC74HC1G04/D
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Amplifier NPN Silicon MMBTA20LT1 COLLECTOR 3 1 BASE 3 1 2 EMITTER 2 CASE 318 – 08, STYLE 6 SOT– 23 TO – 236AB MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 40 Vdc Emitter – Base Voltage
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MMBTA20LT1
236AB)
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Transistor sot363 MARKING 16a
Abstract: Transistor sot-363 MARKING 16a
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor NPN Silicon BCW33LT1 COLLECTOR 3 1 BASE 3 1 2 EMITTER 2 CASE 318 – 08, STYLE 6 SOT– 23 TO – 236AB MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 20 Vdc Collector – Base Voltage
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BCW33LT1
236AB)
Transistor sot363 MARKING 16a
Transistor sot-363 MARKING 16a
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Untitled
Abstract: No abstract text available
Text: MBD110DWT1G, MBD330DWT1G, MBD770DWT1G Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT−363 package is a solution which simplifies circuit design, reduces device count, and reduces
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MBD110DWT1G,
MBD330DWT1G,
MBD770DWT1G
MBD110DWT1/D
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motorola transistor dpak marking
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low Noise Transistor MMBT5087LT1 PNP Silicon Motorola Preferred Device COLLECTOR 3 1 BASE 3 2 EMITTER 1 2 CASE 318 – 08, STYLE 6 SOT– 23 TO – 236AB MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage
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MMBT5087LT1
236AB)
motorola transistor dpak marking
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors BCW69LT1 BCW70LT1 PNP Silicon COLLECTOR 3 1 BASE 3 1 2 EMITTER 2 CASE 318 – 08, STYLE 6 SOT– 23 TO – 236AB MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –45
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BCW69LT1
BCW70LT1
236AB)
BCW69LT1
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low noise transistor bc 179
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BCW61BLT1 BCW61CLT1 BCW61DLT1 General Purpose Transistors PNP Silicon COLLECTOR 3 1 BASE 3 2 EMITTER 1 2 CASE 318 – 08, STYLE 6 SOT– 23 TO – 236AB MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage
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BCW61BLT1
BCW61CLT1
BCW61DLT1
236AB)
low noise transistor bc 179
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