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    MARKING HW Search Results

    MARKING HW Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    5962-8950303GC Rochester Electronics LLC ICM7555M - Dual Marked (ICM7555MTV/883) Visit Rochester Electronics LLC Buy
    54HC221AJ/883C Rochester Electronics LLC 54HC221AJ/883C - Dual marked (5962-8780502EA) Visit Rochester Electronics LLC Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy

    MARKING HW Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TPU005

    Abstract: CAPACITORS color code marking code avx label TPT/TPU069
    Text: Power Ceramic Capacitors Marking - Packaging - Identification MARKING - Dielectric type identification for power capacitors only according to the table below: Each part is marked with the following indications: - Logo - Reference - Rated capacitance (EIA code)


    Original     		HT030 HT030D HTD230 HTD230D HTX230 HTX230D HTV440/442 HTV440D/442D HTZ130 HTZ131 TPU005 CAPACITORS color code marking code avx label TPT/TPU069 PDF

    s3030

    Abstract: 4339 NS4101-AS01 R43392 7224 SAW 433.92
    Text: SAW Resonator R43392 G Features 1-port Resonator Quartz Frequency Stabilization For transmitters or Local Oscillators Package Dimension – S3030 Pin Configuration 2 5 1, 3, 4, 6 Input Output Ground Marking Configuration ITF1 43392) 1) Manufacturer name 2) Marking Number


    Original     		R43392 S3030 421-809G NS4101-AS01 300mm/min s3030 4339 NS4101-AS01 R43392 7224 SAW 433.92 PDF

    A09 N03 MOSFET

    Abstract: marking B3A sot23-5 t7G SOT23-6 marking H2A sot-23 ADM2004 marking moy sot-23 A06 N03 MOSFET SOT23-5 D2Q M05 SOT-23 M2A MARKING SOT-23
    Text: Tiny Part Number Cross Reference Package Marking Model Function Package Description Package Marking Model Function Package Description 0Axx 0Bxx 2A0A 2B0A 2C0A 3A0A 3B0A 3C0A 4A0A 4B0A 4C0A 5A0A 5B0A 5C0A 9Jxx 9Lxx 9Mxx 9Rxx 9Sxx 9Txx 9Zxx A00 A01 A02 A04


    Original     		AD1580-A AD1580-B AD1582-A AD1582-B AD1582-C AD1583-A AD1583-B AD1583-C AD1584-A AD1584-B A09 N03 MOSFET marking B3A sot23-5 t7G SOT23-6 marking H2A sot-23 ADM2004 marking moy sot-23 A06 N03 MOSFET SOT23-5 D2Q M05 SOT-23 M2A MARKING SOT-23 PDF

    SMD MARKING code g

    Abstract: smd marking 327 ABM7 ABRACON MARKING SMD MARKING CODE transistor smd zy smd marking code PH marking code WW SMD SMD MARKING code caa SMD MARKING CODE W ZY marking
    Text: APPENDIX G - Standard Markings Standard Marking for Crystals Thru Hole and SMD package ABC2 ABSM2 Series Marking 1 XX.XXX ABC2 YYWW Example: 4.000MHz: 15th week, 2008: 4.000 ABC2 0815 14.31818MHz: 4th week, 2008: 14.318 ABC2 0804 CAA: Internal code YM: Year and Month


    Original     		000MHz: 31818MHz: AB308R, AB310R SMD MARKING code g smd marking 327 ABM7 ABRACON MARKING SMD MARKING CODE transistor smd zy smd marking code PH marking code WW SMD SMD MARKING code caa SMD MARKING CODE W ZY marking PDF

    marking codes fairchild

    Abstract: HEP08 fairchild marking codes sot-23 TOREX TOP CODE AND8004 t324 SOT-353 A7 marking L5 sot363 xaa643 and8004 D
    Text: AND8004/D ON Semiconductor Logic Date Code and Traceability Marking Prepared by: Douglas Buzard, Logic Product Engineering Edited by: Dianne von Borstel http://onsemi.com APPLICATION NOTE INTRODUCTION This is a summary of ON Semiconductor MOS Logic Device, Date Code, and Traceability Marking. We want to


    Original     		AND8004/D r14525 marking codes fairchild HEP08 fairchild marking codes sot-23 TOREX TOP CODE AND8004 t324 SOT-353 A7 marking L5 sot363 xaa643 and8004 D PDF

    marking codes fairchild

    Abstract: SOT-363 a7 wz 74 marking SOT-363 MARKING WF marking 324 tssop 16 vk sot-363 On Semiconductor Logic Data Code and Traceability marking code cp SOT-363 A1 marking codes ON TSOP6 MARKING 6L
    Text: AND8004/D ON Semiconductor Logic Date Code and Traceability Marking Prepared by: Douglas Buzard, Logic Product Engineering Edited by: Dianne von Borstel http://onsemi.com APPLICATION NOTE INTRODUCTION This is a summary of ON Semiconductor MOS Logic Device, Date Code, and Traceability Marking. We want to


    Original     		AND8004/D 14xxx r14525 AND8004/D marking codes fairchild SOT-363 a7 wz 74 marking SOT-363 MARKING WF marking 324 tssop 16 vk sot-363 On Semiconductor Logic Data Code and Traceability marking code cp SOT-363 A1 marking codes ON TSOP6 MARKING 6L PDF

    Y1416

    Abstract: vk sot-363 LCX00 AND8004 MC74HC04ADR2 ASE CHUNGLI date code marking "marking Code" V2 MX marking code sot23 marking a6 sot363
    Text: AND8004/D ON Semiconductor Logic Date Code and Traceability Marking Edited by: Dianne von Borstel http://onsemi.com APPLICATION NOTE INTRODUCTION This is a summary of ON Semiconductor MOS Logic Device, Date Code, and Traceability Marking. We want to provide our customers with easy access to this information


    Original     		AND8004/D 14xxx Y1416 vk sot-363 LCX00 AND8004 MC74HC04ADR2 ASE CHUNGLI date code marking "marking Code" V2 MX marking code sot23 marking a6 sot363 PDF

    TE3112-PRINTER

    Abstract: cable marker
    Text: Introducing TE3112-Printer : Thermal Transfer Printer The TE3112-PRINTER is a high performance mid-range Identification printer for marking Heat-shrinkable Marker Sleeves, Cable Marker Tags and Labels. With a 300 dpi print head, it’s capable of marking a broad range of products for use in commercial and industrial environments.


    Original     		TE3112-Printer TE3112-PRINTER cable marker PDF

    capacitor 6.8 / 25

    Abstract: MARKING CODE dipped polyester capacitors discharge capacitor welding gold capacitor gold cap industrial application of electric drives marking HW matsushita capacitor 0,1f matsushita aluminium capacitors alpha wire catalog
    Text: DIGI-KEY Issue No. : 2004E001P Date of Issue : 5.Jan.2004 SPECIFICATION Product Description : Electric Double Layer Capacitor GOLD CAPACITOR HW Series Product Part Number : EECHW0D706 Country of Origin : Japan Marking of the Origin : Printed on the packing label


    Original     		2004E001P EECHW0D706 RCR-2370 capacitor 6.8 / 25 MARKING CODE dipped polyester capacitors discharge capacitor welding gold capacitor gold cap industrial application of electric drives marking HW matsushita capacitor 0,1f matsushita aluminium capacitors alpha wire catalog PDF

    NT6SM32M16AG-S1

    Abstract: NT6SM16M32 128M32 NT6SM16M32AK NT6SM32M16AG Lpddr2 Idd1 8M32R NT6SM16M32AK-S1 lpddr2 layout lpddr2 256mb
    Text: 512Mb LPSDR SDRAM NT6SM32M16AG / NT6SM16M32AK / NT6SM16M32RAK Feature  Options Fully synchronous; all signals registered on positive edge of  Marking VDD /VDDQ system clock -1.8V/1.8V  M Internal, pipelined operation; column address can be changed


    Original     		512Mb NT6SM32M16AG NT6SM16M32AK NT6SM16M32RAK -32Meg -16Meg -54-ball -90-ball x13mm) 32M16 NT6SM32M16AG-S1 NT6SM16M32 128M32 Lpddr2 Idd1 8M32R NT6SM16M32AK-S1 lpddr2 layout lpddr2 256mb PDF

    Lpddr2 Idd7

    Abstract: COMMAND42 lpddr2 256mb lpddr2 layout NT6SM32M16AG-S2 LPDDR2 1Gb Memory NT6SM16M32
    Text: 512Mb LPSDR SDRAM NT6SM32M16AG / NT6SM16M32AK / NT6SM16M32RAK Feature  Options Fully synchronous; all signals registered on positive edge of Marking  VDD /VDDQ system clock -1.8V/1.8V  M Internal, pipelined operation; column address can be changed


    Original     		512Mb NT6SM32M16AG NT6SM16M32AK NT6SM16M32RAK -32Meg -16Meg -54-ball -90-ball x13mm) 32M16 Lpddr2 Idd7 COMMAND42 lpddr2 256mb lpddr2 layout NT6SM32M16AG-S2 LPDDR2 1Gb Memory NT6SM16M32 PDF

    flanges

    Abstract: hwson 6pin
    Text: 6PIN HWSON 4521 φ1 A B C φ2 TYPE CLASS label W UNIT: mm ITEM SYMBOL SIZE Diameter A φ 180 + −3 Space Between Flanges W 13 ± 0.5 Outer Diameter B φ 60±1 Flange Hub Marking Slit Location θ1 90º Spindle Diameter C φ 13±0.5 Key Slit Location θ2


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Obsolete. Alternative is BSS123. ZXM41N10F SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL D MOSFET FEATURES • BVDSS = 100V • Low Threshold DEVICE MARKING • 410 ABSOLUTE MAXIMUM RATINGS PINOUT TOP VIEW PARAMETER SYMBOL SOT23 VALUE UNIT Drain-source voltage


    Original     		BSS123. ZXM41N10F PDF

    D8541

    Abstract: alternative bss123 4446 BSS123 ZXM41N0F ZXM41N10F
    Text: Obsolete. Alternative is BSS123. ZXM41N10F SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL D MOSFET FEATURES • BVDSS = 100V • Low Threshold DEVICE MARKING • 410 ABSOLUTE MAXIMUM RATINGS PINOUT TOP VIEW PARAMETER SYMBOL Drain-source voltage Drain-gate voltage


    Original     		BSS123. ZXM41N10F bre611 D8541 alternative bss123 4446 BSS123 ZXM41N0F ZXM41N10F PDF

    design ideas

    Abstract: ZHCS400 TS16949
    Text: ZHCS400 SOD323 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE “SuperBAT” FEATURES PINOUT - TOP VIEW • Low VF SOD323 • High current capability • Miniature surface mount package APPLICATIONS • DC - DC converters • Mobile telecomms • PCMCIA DEVICE MARKING


    Original     		ZHCS400 OD323 OD323 400mA design ideas ZHCS400 TS16949 PDF

    Lpddr2 Idd7

    Abstract: Jedec lpddr2 216-ball LPDDR 8Gb lpddr2-s2
    Text: 256Mb LPSDR SDRAM NT6SM8M32AK Feature  Options Fully synchronous; all signals registered on positive edge of Marking  VDD /VDDQ system clock -1.8V/1.8V  M Internal, pipelined operation; column address can be changed  Configuration every clock cycle


    Original     		256Mb NT6SM8M32AK -16Meg -54-ball -90-ball x13mm) 16M16 Lpddr2 Idd7 Jedec lpddr2 216-ball LPDDR 8Gb lpddr2-s2 PDF

    NTC 200-9

    Abstract: a2240 128M16 A1930 NT6SM16M32
    Text: 512Mb LPSDR SDRAM NT6SM16M32AK Feature  Options Fully synchronous; all signals registered on positive edge of Marking  VDD /VDDQ system clock -1.8V/1.8V  M Internal, pipelined operation; column address can be changed  Configuration every clock cycle


    Original     		512Mb NT6SM16M32AK -16Meg 16M32 NTC 200-9 a2240 128M16 A1930 NT6SM16M32 PDF

    marking d9

    Abstract: marking D9 diode ADS5282 TI QFN marking transistor marking D9 ADS5281 ADS5287 QFN-64 dALLAS MARKING CODE pnaz5
    Text: ADS5281, ADS5282, and ADS5287 Errata SBAZ006B – MARCH 2006 – Revised OCTOBER 2007 Errata to ADS528x, Data Sheet Literature Number SBAS397 Revision Identification Figure 1 explains the ADS528x package marking for both the HTQFP-80 and QFN-64 packages for the


    Original     		ADS5281, ADS5282, ADS5287 SBAZ006B ADS528x, SBAS397 ADS528x HTQFP-80 QFN-64 PADS528x marking d9 marking D9 diode ADS5282 TI QFN marking transistor marking D9 ADS5281 dALLAS MARKING CODE pnaz5 PDF

    Untitled

    Abstract: No abstract text available
    Text: Features • Up to 7.5W CW output power from a 200um 0.22NA core fiber. • High Quality, Reliability, and Performance Applications • Solid State Pumping • Laser Marking Product Specifications 808nm Multi-Mode High-Heat-Load Modules w/ Fiber Description:


    Original     		200um 808nm l/mm/808nm-mm-fiber-coupled-hhl-package-4 PDF

    lpddr2 256mb

    Abstract: NT6DM8M32AC-T1 NT6DM16M16AD NT6DM8M32AC lpddr2 layout NT6DM8M32 Dual LPDDR2 lpddr2 256mb kgd lpddr2-s2
    Text: 256Mb LPDDR SDRAM NT6DM16M16AD / NT6DM8M32AC Options Feature  Double-data rate architecture; two data transfer per clock cycle  Bidirectional, data strobe DQS is transmitted/received with data, to be used in capturing data at the receiver Marking  VDD /VDDQ


    Original     		256Mb NT6DM16M16AD NT6DM8M32AC -16Meg 16M16 lpddr2 256mb NT6DM8M32AC-T1 NT6DM8M32AC lpddr2 layout NT6DM8M32 Dual LPDDR2 lpddr2 256mb kgd lpddr2-s2 PDF

    80C166

    Abstract: C166 P-BQFP-100 80C166/83C166
    Text: SIEMENS Microcomputer Components Technical Support Group Munich HL MCB PD/AT 2 Errata Sheet October 16, 1995 / Release 1.3 Device : Stepping Code / Marking : SAB 80C166/83C166 - S SAB 80C166/83C166 - S - T3 SAB 80C166/83C166 - M SAB 80C166/83C166 - M - T3


    Original     		80C166/83C166 80C166/83C166-S P-BQFP100) 80C166/83C166-M P-MQFP-100-2) 80C166 80C166/83C166, C166 P-BQFP-100 PDF

    A1930

    Abstract: No abstract text available
    Text: 256Mb LPSDR SDRAM NT6SM8M32AK Feature  Options Fully synchronous; all signals registered on positive edge of Marking  VDD /VDDQ system clock -1.8V/1.8V  M Internal, pipelined operation; column address can be changed  Configuration every clock cycle


    Original     		256Mb NT6SM8M32AK -16Meg 16M16 A1930 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFT92W PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92W NPN ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration


    OCR Scan     		BFT92W Q62702-F1681 OT-323 900MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: A COMPANY OF MODEL IMC-1210 Inductors Surface Mount, Molded FEATURES • Molded construction provides superior strength and moisture resistance •Tape and reel packaging for automatic handling, 2000/reel, EIA481 • Printed marking • Compatible with vapor phase and infra-red


    OCR Scan     		IMC-1210 2000/reel, EIA481 100pH. 100pH PDF