Untitled
Abstract: No abstract text available
Text: resistors RN73 ultra precision 0.05%, 0.1%, 1% tolerance thin film chip resistor EU features • Nickel chromium thin film resistor element • Marking: 1E: Black body with no marking 1J, 2A, 2B, 2E: green body with distinctive color marking • Products with lead-free terminations meet
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004ger
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NC7SZ14P5
Abstract: S-75L14ANC S-75L14ANC-5LA-T2 SC88A SN74AHC1G00DCK SN74AHC1G02DCK TC7S00F TC7S02F TC7SH00F TC7SH02F
Text: Contents General Description . . . . . . . . . . . . . Features . . . . . . . . . . . . . . . . . . . . . . Applications . . . . . . . . . . . . . . . . . . . Pin Assignment . . . . . . . . . . . . . . . . . Marking . . . . . . . . . . . . . . . . . . . . . .
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N74AHC1G08DBV
NC7SZ08M5
NC7S14M5
SN74AHC1G14DBV
NC7SZ14M5
NC7S32M5
SN74AHC1G32DBV
NC7SZ32M5
NC7S86M5
SN74AHC1G86DBV
NC7SZ14P5
S-75L14ANC
S-75L14ANC-5LA-T2
SC88A
SN74AHC1G00DCK
SN74AHC1G02DCK
TC7S00F
TC7S02F
TC7SH00F
TC7SH02F
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CAPACITOR marking code 2A
Abstract: CAPACITOR 560uf j 6.3 capacitor 220uF 63vdc capacitor color code CAPACITOR MARKING electrolytic capacitor date code capacitor 2.2uF 63vdc 1500uF 40VDC 150uf 450vdc capacitor 25 v 1000uF electrolytic capacitor
Text: 07/10 www.niccomp.com | Tech support: TPMG@niccomp.com COMPONENT MARKING SMT VERTICAL CAN ≥ 4mm Ø LIQUID ELECTROLYTE ALUMINUM ELECTROLYTIC CAPACITOR (MARKING SYSTEM EFFECTIVE OCTOBER 1999) YEAR CODE Example shown: NACZ102M6.3V8X10.5TR13F Produced May 2009
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NACZ102M6
3V8X10
5TR13F
CAPACITOR marking code 2A
CAPACITOR 560uf j 6.3
capacitor 220uF 63vdc
capacitor color code
CAPACITOR MARKING
electrolytic capacitor date code
capacitor 2.2uF 63vdc
1500uF 40VDC
150uf 450vdc capacitor
25 v 1000uF electrolytic capacitor
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Untitled
Abstract: No abstract text available
Text: 766 Hazard Marking Vinyl Tape Product Data Sheet Updated : September 1999 Supersedes : New Product Description A general purpose hazard marking vinyl tape for use in non-critical applications. Printed in black and yellow stripes. Physical Properties Adhesive Type
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125mm)
D-3330
N/10mm
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s3030
Abstract: 4339 NS4101-AS01 R43392 7224 SAW 433.92
Text: SAW Resonator R43392 G Features 1-port Resonator Quartz Frequency Stabilization For transmitters or Local Oscillators Package Dimension – S3030 Pin Configuration 2 5 1, 3, 4, 6 Input Output Ground Marking Configuration ITF1 43392) 1) Manufacturer name 2) Marking Number
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R43392
S3030
421-809G
NS4101-AS01
300mm/min
s3030
4339
NS4101-AS01
R43392
7224
SAW 433.92
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A09 N03 MOSFET
Abstract: marking B3A sot23-5 t7G SOT23-6 marking H2A sot-23 ADM2004 marking moy sot-23 A06 N03 MOSFET SOT23-5 D2Q M05 SOT-23 M2A MARKING SOT-23
Text: Tiny Part Number Cross Reference Package Marking Model Function Package Description Package Marking Model Function Package Description 0Axx 0Bxx 2A0A 2B0A 2C0A 3A0A 3B0A 3C0A 4A0A 4B0A 4C0A 5A0A 5B0A 5C0A 9Jxx 9Lxx 9Mxx 9Rxx 9Sxx 9Txx 9Zxx A00 A01 A02 A04
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AD1580-A
AD1580-B
AD1582-A
AD1582-B
AD1582-C
AD1583-A
AD1583-B
AD1583-C
AD1584-A
AD1584-B
A09 N03 MOSFET
marking B3A sot23-5
t7G SOT23-6
marking H2A sot-23
ADM2004
marking moy sot-23
A06 N03 MOSFET
SOT23-5 D2Q
M05 SOT-23
M2A MARKING SOT-23
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amplifier for piezo sensor
Abstract: Micronas hall sensor marking
Text: DATA SHEET MICRONAS Edition Oct. 19, 2004 6251-439-2DS HAL320 Differential Hall Effect Sensor IC MICRONAS HAL320 DATA SHEET Contents Page Section Title 3 3 3 3 3 4 4 4 1. 1.1. 1.2. 1.2.1. 1.3. 1.4. 1.5. 1.6. Introduction Features Marking Code Special Marking of Prototype Parts
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HAL320
6251-439-2DS
HAL320
amplifier for piezo sensor
Micronas
hall sensor marking
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Hall sensors marking code D
Abstract: hall IC 316 SOT89B-2 Hall sensors code sf sot892 MICRONAS MARKING TYPE to92ua HALL SENSOR marking codes
Text: DATA SHEET MICRONAS Edition April 23, 2004 6251-345-2DS HAL300 Differential Hall Effect Sensor IC MICRONAS HAL300 DATA SHEET Contents Page Section Title 3 3 3 3 3 4 4 4 1. 1.1. 1.2. 1.2.1. 1.3. 1.4. 1.5. 1.6. Introduction Features Marking Code Special Marking of Prototype Parts
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HAL300
6251-345-2DS
HAL300
Hall sensors marking code D
hall IC 316
SOT89B-2
Hall sensors code sf
sot892
MICRONAS MARKING TYPE
to92ua
HALL SENSOR marking codes
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6251-465-4DS
Abstract: 525k hall SMD marking codes Hall sensors
Text: MICRONAS Edition Aug. 8, 2002 6251-465-4DS HAL525, HAL535 Hall Effect Sensor Family MICRONAS HAL525, HAL535 DATA SHEET Contents Page Section Title 3 3 3 4 4 4 4 4 1. 1.1. 1.2. 1.3. 1.3.1. 1.4. 1.5. 1.6. Introduction Features Family Overview Marking Code Special Marking of Prototype Parts
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HAL525,
HAL535
6251-465-4DS
HAL535
6251-465-4DS
525k hall
SMD marking codes Hall sensors
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QEN79
Abstract: J-STD-0001 TEMEX SMD QEN79 14x9 transistor SMD p02 smd crystal oscillator 2 pin 50 Mhz p02 smd crystal oscillator smd smd marking BH crystal oscillator marking
Text: FREQUENCY XOHyb SMD QEN79 Defense airborne – Crystal oscillator – XO General Specification rev-A Description .P02 Marking .P02
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QEN79
J-STD-0001/D
QEN79
J-STD-0001
TEMEX SMD QEN79
14x9
transistor SMD p02
smd crystal oscillator 2 pin 50 Mhz
p02 smd
crystal oscillator smd
smd marking BH
crystal oscillator marking
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MARKING HYNIX
Abstract: MARKING HYNIX Origin Country
Text: HY62LF16206A-LT12C 128Kx16bit full CMOS SRAM Document Title 128K x16 bit 2.5 V Low Power Full CMOS slow SRAM Revision History Revision No History Draft Date Remark 00 01 02 03 Initial Correct Pin Connection Correct Marking Information Correct Pin Configuration
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HY62LF16206A-LT12C
128Kx16bit
120ns
MARKING HYNIX
MARKING HYNIX Origin Country
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BBY55-02W
Abstract: CT10 SCD80
Text: BBY55-02W Silicon Tuning Diode Excellent linearity High Q hyperabrupt tuning diode 2 Low series inductance Designed for low tuning voltage operation for VCO's in mobile communications equipment 1 Very low capacitance spread VES05991 Type Marking
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BBY55-02W
VES05991
SCD80
Jul-12-2001
Valuesl-12-2001
BBY55-02W
CT10
SCD80
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ves05991
Abstract: SCD-80
Text: BBY 53-02W Silicon Tuning Diode • High Q hyperabrupt tuning diode 2 • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage 1 VES05991 Type Marking Pin Configuration Package BBY 53-02W
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3-02W
VES05991
SCD-80
Mar-23-1999
ves05991
SCD-80
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DIODE MARKING 541
Abstract: marking H6 BBY66-02V SC79 VES05991 CT45
Text: BBY66-02V Silicon Tuning Diode Preliminary data 2 High capacitance ratio High Q hyperabrupt tuning diode Designed for low tuning voltage operation 1 for VCO' s in mobile communications equipment VES05991 Very low capacitance spread Type BBY66-02V Marking
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BBY66-02V
VES05991
Jul-26-2001
DIODE MARKING 541
marking H6
BBY66-02V
SC79
VES05991
CT45
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BBY52-02W
Abstract: SCD80 MARKING 02W bby5202w
Text: BBY52-02W Silicon Tuning Diode • High Q hyperband tuning diode • Low series inductance • Designed for low tuning voltage operation 2 • For VCO's in mobile communications equipment 1 VES05991 Type Marking Pin Configuration Package BBY52-02W K 1=C SCD80
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BBY52-02W
VES05991
SCD80
Jul-02-2001
BBY52-02W
SCD80
MARKING 02W
bby5202w
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HY62CT081
Abstract: hy62ct081e HY62CT08081E
Text: HY62CT08081E Series 32Kx8bit CMOS SRAM Document Title 32K x8 bit 5.0V Low Power Slow SRAM Revision History Revision No History Draft Date 00 Initial Nov.01.2000 Preliminary 01 Marking Information Add Revised - DC / AC Characteristics - AC Test Condition Add : 5pF Test Load
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HY62CT08081E
32Kx8bit
HY62CT081E
HY62CT08081E
HY62CT081
hy62ct081e
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HY62CT08081E
Abstract: HY62CT08081E-C HY62CT08081E-DGC HY62CT08081E-DGE HY62CT08081E-DGI HY62CT08081E-DPC HY62CT08081E-DPE HY62CT08081E-DPI HY62CT08081E-E HY62CT08081E-I
Text: HY62CT08081E Series 32Kx8bit CMOS SRAM Document Title 32K x8 bit 5.0V Low Power Slow SRAM Revision History Revision No History Draft Date 00 Initial Nov.01.2000 Preliminary 01 Marking Information Add Revised - DC / AC Characteristics - AC Test Condition Add : 5pF Test Load
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HY62CT08081E
32Kx8bit
HY62CT08081E
HY62CT08081E-C
HY62CT08081E-DGC
HY62CT08081E-DGE
HY62CT08081E-DGI
HY62CT08081E-DPC
HY62CT08081E-DPE
HY62CT08081E-DPI
HY62CT08081E-E
HY62CT08081E-I
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diode marking 14
Abstract: No abstract text available
Text: BBY 52-02W Silicon Tuning Diode • High Q hyperband tuning diode • Low series inductance • Designed for low tuning voltage operation 2 • For VCO's in mobile communications equipment 1 VES05991 Type Marking Pin Configuration Package BBY 52-02W K 1=C
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2-02W
VES05991
SCD-80
Sep-30-1999
diode marking 14
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BBY51-02W
Abstract: SCD80 MARKING 02W
Text: BBY51-02W Silicon Tuning Diode High Q hyperabrupt tuning diode 2 Low series inductance Designed for low tuning voltage operation For VCO's in mobile communications equipment 1 VES05991 Type Marking Pin Configuration Package BBY51-02W I 1=C SCD80 2=A
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BBY51-02W
VES05991
SCD80
Jul-04-2001
EHD07128
EHD07129
BBY51-02W
SCD80
MARKING 02W
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HY628400ALLG-55
Abstract: VDR 0047 HY628400ALG-55 hy628400allg HY628400ALLG-I
Text: HY628400A Series 512Kx8bit CMOS SRAM Document Title 512K x8 bit 5.0V Low Power CMOS slow SRAM Revision History Revision No History Draft Date 04 Revision History Insert Jul.06.2000 Final 05 Revised - Change Iccdr Value : 15uA => 20uA Aug.04.2000 Final 06 Marking Information Add
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HY628400A
512Kx8bit
HY628400A
HY628400ALLG-55
VDR 0047
HY628400ALG-55
hy628400allg
HY628400ALLG-I
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BC648B
Abstract: No abstract text available
Text: Transistors BC847B NPN General Purpose Transistor I BC847B •Feature« •E x te rn a l dimensions Units : mm 1 > BVceo<45V (lc=1m A ) 2 ) Complements the BC857B. BC847B •P a c k a g e , marking, and packaging specifications Type BC847B Package Marking
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BC847B
BC857B.
0Dlb713
O-220FN
O-220FN
O220FP
T0-220FP,
BC648B
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BCW65C
Abstract: FERRANTI ELECTRONICS transistors DEVICE MARKING BF197P BCV71 BCV72 BCW29 BCW30 BCW31 BCW32
Text: SOT-23 TRANSISTORS & DIODES PRODUCT LISTANO DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW 29 BCW 30 BCW31 BCW 32 BCW 33 BCW 60A BCW 60B BCW 60C BCW 60D B CW 61A BCW 61B BCW 61C B CW 61D B CW 65A
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OT-23
BCV71
BFQ31
BCV72
BFQ31A
BCW29
BFS20
BCW30
BCW31
BCW32
BCW65C
FERRANTI ELECTRONICS
transistors DEVICE MARKING
BF197P
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Q62702B
Abstract: marking 34 diode
Text: SIEMENS BBY 51-02W Silicon Tuning Diode Preliminary data • High Q hyperabrupt tuning diode • Low series inductance • Designed for low tuning voltage operation • For VCO’s in mobile communications equipment Type Marking Ordering Code Pin Configuration
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OCR Scan
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1-02W
Q62702-B0858
SCD-80
Q62702B
marking 34 diode
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Q62702B
Abstract: marking L
Text: SIEMENS BBY 53-02W Silicon Tuning Diode Preliminary data • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO’s in mobile communications equipment • High ratio at low reverse voltage Type Marking Ordering Code Pin Configuration
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OCR Scan
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PDF
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3-02W
Q62702-B0862
SCD-80
Q62702B
marking L
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