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    MARKING JLS Search Results

    MARKING JLS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    MARKING JLS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MARKING 68W SOT-23

    Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23
    Text: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06


    Original     		PDF 25-04W 25-05W 25-06W 25-07W 3904S 846AT 846BW 846BT 847AT 847BW MARKING 68W SOT-23 marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23

    transistor Bc 540

    Abstract: 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89
    Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BA 895 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 50-02V BAR 50-03W BAR 50-05 BAR 60 BAR 61 BAR 63 BAR 63-02V BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W


    Original     		PDF 0-02V 0-03W 3-02V 3-02W 3-03W 3-04W 3-05W 3-06W 4-02V 4-02W transistor Bc 540 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89

    Q62702-F1628

    Abstract: No abstract text available
    Text: BF 1009S Silicon N-Channel MOSFET Tetrode • For low-noise, gain-controlled input stages up to 1GHz • Operating voltage 9V • Integrated bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		PDF 1009S Q62702-F1628 OT-143 Jul-29-1996 Q62702-F1628

    Q62702-F1628

    Abstract: marking code g1s
    Text: BF 1009S Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 9V • Integrated bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		PDF 1009S 1009S Q62702-F1628 OT-143 200MHz Q62702-F1628 marking code g1s

    Untitled

    Abstract: No abstract text available
    Text: BF1009S. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing network • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 Drain AGC RF Input


    Original     		PDF BF1009S. BF1009S OT143 BF1009SR OT143R

    sot143 marking code g2

    Abstract: p 1S marking SOT143 BF1009S BF1009SR BFP181 BFP181R
    Text: BF1009S. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing network • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 Drain AGC RF Input


    Original     		PDF BF1009S. BF1009S OT143 BF1009SR OT143R sot143 marking code g2 p 1S marking SOT143 BF1009S BF1009SR BFP181 BFP181R

    BF1009SW

    Abstract: No abstract text available
    Text: BF1009S. Silicon N_Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing network Drain AGC RF Input G2 G1 RF Output + DC GND ESD Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BF1009S. BF1009S BF1009SR OT143 OT143R BF1009S, BF1009SR BF1009W 10mponents BF1009SW

    BF1009SW

    Abstract: BF1009 marking code g2s
    Text: BF1009S. Silicon N_Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BF1009S. EHA07215 BF1009S BF1009SR OT143 OT143R BF1009S, BF1009SR BF1009W BF1009SW BF1009 marking code g2s

    msc 1697

    Abstract: 486A-486B nec 08f DLS FT 031 awg 1608 F60A1B Transistor NEC 05F 6J200A3B KULKA 9-85 1432126
    Text: ENGINEERING CATALOG March, 2008 What’s New: • Flexible Stranded Wire UL Rating Information • SCCR with Fuses or Circuit Breakers • Datasheets on www.marathonsp.com • • • • FUSE HOLDERS POWER BLOCKS TERMINAL BLOCKS CUSTOM PRODUCTS www.marathonsp.com


    Original     		PDF 6137K/SK/7500/3-08/DBH msc 1697 486A-486B nec 08f DLS FT 031 awg 1608 F60A1B Transistor NEC 05F 6J200A3B KULKA 9-85 1432126

    marking code g1s

    Abstract: marking g1s marking G2s
    Text: SIEMENS BF 2030W Silicon N-Channel MOSFET Tetrode Preliminary data • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V ESD: Electrostatic discharge sensitive device, observe handling precaution Type Marking Ordering Code


    OCR Scan     		PDF Q62702-F1774 OT-343 marking code g1s marking g1s marking G2s

    BCX70

    Abstract: No abstract text available
    Text: SIEMENS NPN Silicon AF Transistors BCW 60 BCX 70 • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BCW 61, BCX 71 PNP Type Marking


    OCR Scan     		PDF Q62702-C1517 Q62702-C1497 Q62702-C1476 Q62702-C1477 Q62702-C1529 Q62702-C1567 Q62702-C1539 Q62702-C1481 Q62702-C1552 Q62702-C1571 BCX70

    a31s

    Abstract: Silicon N Channel MOSFET Tetrode
    Text: SIEMENS BF 2000W Silicon N Channel MOSFET Tetrode Target data sheet • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 GHz Type Marking Ordering Code Package II 5 CO h 1= D CO Q62702-F1772 CM BF 2000W NDs


    OCR Scan     		PDF Q62702-F1772 OT-343 a31s Silicon N Channel MOSFET Tetrode

    marking Sanyo

    Abstract: M 3211 TSOP44 M 3211 A
    Text: MEMORY P A C K A G E D IM EN SIO N S 0A11 of Sanyo Memory package dimensions are illustrated below. #A11 dimensions are in mm, and dimensions which are not followed by min. or max. are represented by typical values. •N o marking is indicated. Package Dimensions 3192 unit : mm


    OCR Scan     		PDF DIP32 600mil) TSOP44 TSOP50n marking Sanyo M 3211 M 3211 A

    marking jls

    Abstract: No abstract text available
    Text: Silicon PIN Diodes BAR 60 BAR 61 • For RF attenuation • Switching applications for frequencies above 10 MHz 3 Type Marking Ordering code tape and reel BAR 60 60 Q 62702 -A 7 8 6 Pin configuration Package SOT-143 io - E X - BAR 61 61 Q 62702- A 1 20 —o1


    OCR Scan     		PDF OT-143 marking jls

    241K010

    Abstract: 471KD14 391kd10 431K010 471kd07 431KD07 471KD20 391kd07 471kd10 S47120
    Text: E L E C T R I C A L WORLD PRODUCTS C H A R A C T E R INC 4flE D •nmahô odqqgo I S T I C S ? t ASIAN STAN DARD Featuring Sanken’s New Super “S ” Series Part Number (SNR) Actual Part Marking Disc IDiameter Size (mm) Rated Voltage AC Volts (R M S)


    OCR Scan     		PDF 201KD14 S201K20 221KD05 221KD07 S62120 S681K20 751KD10 751KD14 751KD20 S68120 241K010 471KD14 391kd10 431K010 471kd07 431KD07 471KD20 391kd07 471kd10 S47120

    8G1014-Z

    Abstract: 8G1044C-Z 8G1066 AC125V AC1500V 8GA1016-Z 8G2012-Z 8GA1014-Z fujisokuswitches 8G2016
    Text: COPAL ELECTRONICS 8G R oH SÜtffäß 0 * y z s v 7 W ' f y & m h y jls z j y ? Washable Type Miniature Toggle Switches •4$ A -K it— ^ 7 h ffllZ $T<DT\ Zf'J > ? 'È £ t * 4 o "J V 5 r o S Æ £ i i ft 3 tz » I t t f - $ - if-0 1 ' T i ' £ t


    OCR Scan     		PDF AC125V AC250V AC1500V 1000M DC500V) 125VAC 250VAC 8G1014-Z 8G1044C-Z 8G1066 8GA1016-Z 8G2012-Z 8GA1014-Z fujisokuswitches 8G2016

    1001-I

    Abstract: No abstract text available
    Text: M1MA151AT1* CASE 318D-03, STYLE 4 MAXIMUM RATINGS [T A = 25 C Rating R everse V oltage P eak R e verse V oltage Fo rw a rd C urrent F e a k Fo rw a rd C u rre n t P eak Fo rw a rd S urge C u rre n t •I = Symbol Value Unit Vr 40 Vdc vrm 40 V dc if 100 m A dc


    OCR Scan     		PDF M1MA151AT1* 318D-03, SC-59 1001-I

    Untitled

    Abstract: No abstract text available
    Text: MULTIPOSITION COAXIAL SWITCHES N and SMA SPnT MINIATURES and STANDARDS up to 18 GHz 1 These models are already equiped with suppression diodes. (2) Standard products are equiped with common minus. (3) BCD driver enables also a manual reset through driver code 0000.


    OCR Scan     		PDF 100mA

    MIL-PRF-38535

    Abstract: LT1126 QML38535 qml-38535
    Text: REVISIONS DATE YR-MO-DA DESCRIPTION LTR APPROVED REV SHEET REV SHEET REV STATUS REV OF SHEETS SHEET PM IC N/A PREPARED BY RICK OFFICER STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE


    OCR Scan     		PDF 5962-9862801QPA LT1126MJ8 00M70a MIL-PRF-38535 LT1126 QML38535 qml-38535

    Untitled

    Abstract: No abstract text available
    Text: Opto Semiconductors GaAIAs-IR-Lumineszenzdiode in SMT-Gehäuse GaAIAs Infrared Emitter in SMT Package SFH 421 SFH 426 C\J 1 ^ C O O 2.1 1.7 0.1 typ Q_ 0.9 0 .7 C a th o d e /C o lle c to r m a rk in g C a th o d e /C o lle c to r A p p ro x . w e ig h t 0 .0 3 g


    OCR Scan     		PDF 103ff. 169ff.

    TC1100C

    Abstract: 380n
    Text: rz T ^7# SGS-THOMSON M » iL iO T (S iO O S DTV64D/F (CRT HORIZONTAL DEFLECTION) HIGH VOLTAGE DAMPER DIODE MA I N P R O D U C T S C H A R A C T E R I S T I C S I f (AV) 6A V rrm 1500V Vf (max) 1 . 4V F E A T UR E S AND B ENE FIT S • Very fast recovery diode allows HF H. deflection.


    OCR Scan     		PDF DTV64D/F 56-82kHz ISOWATT220AC) T0220AC ISOWATT22 DTV64D DTV64F 64kHz TC1100C 380n

    PS2701-4

    Abstract: No abstract text available
    Text: rz T SGS-THOMSON ^ 7 # M » iL iO T ( S iO O S D T V 8 2 D /F (CRT HORIZONTAL DEFLECTION) HIGH VOLTAGE DAMPER DIODE MA I N P R O D U C T S C H A R A C T E R I S T I C S I f (AV) 6A V rrm 1500V Vf (max) 1 . 3V F E A T UR E S AND B ENE FIT S • Very fast recovery diode allows HF H. deflection.


    OCR Scan     		PDF 64-100kHz ISOWATT220AC) T0220AC ISOWATT22 DTV82D DTV82F 82kHectronics PS2701-4

    Untitled

    Abstract: No abstract text available
    Text: rz T ^7# SGS-THOMSON M » iL iO T (S iO O S DTV110D/F (CRT HORIZONTAL DEFLECTION) HIGH VOLTAGE DAMPER DIODE M A IN P R O D U C T S C H A R A C T E R I S T I C S I f (AV) 1 OA V rrm 1500V Vf (max) 1 .5V F EA T U R E S AND B E N E FITS • Very fast recovery diode.


    OCR Scan     		PDF DTV110D/F 82-110kHz ISOWATT220AC) T0220AC DTV110D DTV110F

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA jm m TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U— MOS III TPC6003 NOTE BOOK PC APPLICATIONS PORTABLE EQUIPMENTS APPLICATIONS UNIT in nun •Low Drain - Source ON Resistance : R D S (0N)=19niQ(Typ.) •High Forward Transfer Admittance : |Y f s |= 7S (Typ.)


    OCR Scan     		PDF TPC6003 19niQ