TRANSISTOR MARKING YB
Abstract: BFP420F BFP540F s parameters 4ghz
Text: BFP540F NPN Silicon RF Transistor • For highest gain low noise amplifier 3 at 1.8 GHz 2 4 1 • Outstanding G ms = 20 dB Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET 45 - Line to p v ie w " ! A T s d ir e c tio n o f u n r e e lin g
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BFP540F
TRANSISTOR MARKING YB
BFP420F
BFP540F
s parameters 4ghz
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ic marking Yb
Abstract: INFINEON ATS TRANSISTOR MARKING YB BFP420F BFP540F E6327 keic
Text: BFP540F XYs NPN Silicon RF Transistor • For highest gain low noise amplifier 3 2 at 1.8 GHz 4 • Outstanding Gms = 20 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET TSFP-4 45 - Line to p v ie w 3 4 A T s 1 2 d ir e c tio n o f u n r e e lin g
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BFP540F
ic marking Yb
INFINEON ATS
TRANSISTOR MARKING YB
BFP420F
BFP540F
E6327
keic
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Untitled
Abstract: No abstract text available
Text: SIEGET 45 BFP520F NPN Silicon RF Transistor Preliminary data XYs For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V 3 Outstanding Gms = 23 dB 2 4 Noise Figure F = 0.95 dB 1 For oscillators up to 15 GHz Transition frequency fT = 45 GHz TSFP-4
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BFP520F
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BFP420F
Abstract: BFP520F
Text: BFP520F NPN Silicon RF Transistor* • For highest gain low noise amplifier 3 at 1.8 GHz and 2 mA / 2 V 2 4 1 Outstanding Gms = 23 dB Noise Figure F = 0.95 dB • For oscillators up to 15 GHz • Transition frequency f T = 45 GHz • Gold metallisation for high reliability
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BFP520F
BFP420F
BFP520F
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mje 180 equivalent
Abstract: No abstract text available
Text: BFP620F_E6327 NPN Silicon Germanium RF Transistor XYs Preliminary data • For high gain low noise amplifiers • Smallest Package 1.4 x 0.8 x 0.59mm 3 • Noise figure F = 0.65 dB at 1.8 GHz 2 4 outstanding Gms = 21 dB at 1.8 GHz 1 • Gold metallization for extra high reliability
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BFP620F
E6327
mje 180 equivalent
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BFP520F
Abstract: BFP420F TSFP-4 transistor BF 235
Text: BFP520F NPN Silicon RF Transistor* • For highest gain low noise amplifier 3 at 1.8 GHz and 2 mA / 2 V 2 4 1 Outstanding Gms = 23 dB Noise Figure F = 0.95 dB • For oscillators up to 15 GHz • Transition frequency f T = 45 GHz • Gold metallisation for high reliability
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BFP520F
BFP520F
BFP420F
TSFP-4
transistor BF 235
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TRANSISTOR MARKING FA
Abstract: EHA07307 CJE marking diode
Text: SIEGET 25 BFP405F NPN Silicon RF Transistor XYs Preliminary data For low current applications Smallest Package 1.4 x 0.8 x 0.59mm 3 Noise figure F = 1.25 dB at 1.8 GHz 4 outstanding G ms = 23 dB at 1.8 GHz Transition frequency f T = 25 GHz Gold metallization for high reliability
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BFP405F
TRANSISTOR MARKING FA
EHA07307
CJE marking diode
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marking ats
Abstract: BFP540F
Text: BFP540F XYs NPN Silicon RF Transistor • For highest gain low noise amplifier 3 2 at 1.8 GHz 4 • Outstanding Gms = 20 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET TSFP-4 45 - Line to p v ie w 3 4 A T s 1 2 d ir e c tio n o f u n r e e lin g
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BFP540F
Jan-28-2004
marking ats
BFP540F
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BFP540F
Abstract: No abstract text available
Text: BFP540F XYs NPN Silicon Germanium RF Transistor • For highest gain low noise amplifier 3 2 at 1.8 GHz 4 • Outstanding G ms = 20 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET TSFP-4 45 - Line to p v ie w " ! A T s
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BFP540F
Sep-05-2003
BFP540F
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Untitled
Abstract: No abstract text available
Text: BFP520F NPN Silicon RF Transistor* • For highest gain low noise amplifier 3 at 1.8 GHz and 2 mA / 2 V 2 4 1 Outstanding Gms = 23 dB Noise Figure F = 0.95 dB • For oscillators up to 15 GHz • Transition frequency f T = 45 GHz • Gold metallisation for high reliability
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BFP520F
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BFP405F
Abstract: BFP420F
Text: BFP405F NPN Silicon RF Transistor* • For low current applications 3 • Smallest Package 1.4 x 0.8 x 0.59 mm 2 4 1 • Noise figure F = 1.25 dB at 1.8 GHz outstanding Gms = 23 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability
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BFP405F
BFP405F
BFP420F
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7661 infineon
Abstract: BFP420F
Text: BFP420F NPN Silicon RF Transistor* • For high gain low noise amplifiers 3 • Smallest Package 1.4 x 0.8 x 0.59 mm 2 4 1 • Noise figure F = 1.1 dB at 1.8 GHz outstanding Gms = 20 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability
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BFP420F
7661 infineon
BFP420F
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marking 93A
Abstract: No abstract text available
Text: SIEMENS BFP 93A NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code Type
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Q62702-F1144
OT-143
900MHz
marking 93A
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFP 81 NPN Silicon RF Transistor • For low-noise amplifiers up to 2GHz at collector currents from 0.5 mA to 20 mA. ESP: Electrostatic discharge sensitive device, observe handling precaution! Pin Configuration Marking Ordering Code Type Q62702-F1611
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Q62702-F1611
OT-143
0535bOS
900MHz
fl235b05
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 146W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor Ri=47k£2, R2=22k£2 FL U TT Pin Configuration Ordering Code WLs UPON INQUIRY Package UJ II CM Marking BCR 146W
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OT-323
0535b05
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TRANSISTOR k 1254
Abstract: No abstract text available
Text: SIEMENS BF 771 NPN Silicon RF Transistor • For modulators and amplifiers in TV and VCR tuners ESP: Electrostatic discharge sensitive device, observe handling precaution! Ordering Code Pin Configuration BF 771 RBs Q62702-F1225 1 =B Package II CO Marking 2= E
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Q62702-F1225
OT-23
fl535b05
G121707
TRANSISTOR k 1254
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 198 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor R1=47kiî, R2=47ki2 Type Marking Ordering Code Pin Configuration BCR 198 WRs Q62702-C2266 1=B Package 3=C 2=E SOT-23
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47ki2)
Q62702-C2266
OT-23
flE35b05
H35t05
DlS0fi43
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 512 NPN Silicon Digital Transistor >Switching circuit, inverter, interface circuit, drive circuit >Built in bias resistor R-|=4.7kfl, R2=4.7kfl 13 ET Type Marking Ordering Code Pin Configuration BCR 512 XFs Q62702-C2445 1= B Package 2=E 3=C SOT-23
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Q62702-C2445
OT-23
023SbD5
G120a
015D677
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sot23 marking code 158
Abstract: KH SOT23
Text: SIEMENS BCR 158 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor <R1=2.2lc£2l R2=47ki2 Type Marking Ordering Code Pin Configuration BCR 158 WIs 1=B Q62702-C2338 Package 2=E 3=C SOT-23
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47ki2)
Q62702-C2338
OT-23
300ns;
sot23 marking code 158
KH SOT23
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFP 183 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code
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Q62702-F1382
OT-143
235bQ5
BFP183
900MHz
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1207A
Abstract: No abstract text available
Text: SIEMENS BCR 166 PNP Silicon Digital Transistor *Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor R1=4.7kfl, R2=47k£2 Type Marking Ordering Code Pin Configuration BCR 166 WTs 1=B Q62702-C2339 Package 2=E 3=C SOT-23 Maximum Ratings
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Q62702-C2339
OT-23
BE35b05
S35b05
fi235bD5
1207A
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFS17P NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA • CECC-type available: CECC 50002/248. BFS 17P MCs 1 =B Q62702-F940 II Pin Configuration CM Marking Ordering Code Package LU Type 3=C
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OCR Scan
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BFS17P
Q62702-F940
OT-23
0535b05
fi235b05
500MHz
flE35b05
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFS17W NPN Silicon RF Transistor >For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA Marking Ordering Code B F S 17W M Cs Pin Configuration Q62702-F1645 1 =B Package ro il m Type 3 =C SOT-323 Maximum Ratings of any single Transistor
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BFS17W
Q62702-F1645
OT-323
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Untitled
Abstract: No abstract text available
Text: SGS-ÏHOMSON m œ m ie ra M o e s ADB18PS AUTOPROTECTED DIODE BRIDGE Application Specific Discretes A.S.D. MAIN APPLICATIONS Any electronic equipment needing a diode bridge and protection against transient overvoltage: • Caller Id ■ Handset DESCRIPTION
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ADB18PS
ADB18PS
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