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    MARKING L1 FET Search Results

    MARKING L1 FET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    MARKING L1 FET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    g1 TRANSISTOR SMD MARKING CODE

    Abstract: marking code ff SMD Transistor TRANSISTOR SMD MARKING CODE BS t marking code ff p SMD Transistor smd marking mop NF marking TRANSISTOR SMD c4 marking TRANSISTOR SMD nf c1 marking TRANSISTOR SMD nf c4 BF998 g1 7 TRANSISTOR SMD MARKING CODE
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF998; BF998R Silicon N-channel dual-gate MOS-FETs Product specification Supersedes data of April 1991 File under Discrete Semiconductors, SC07 1996 Aug 01 Philips Semiconductors Product specification Silicon N-channel dual-gate MOS-FETs


    Original     		BF998; BF998R BF998R MAM039 BF998 g1 TRANSISTOR SMD MARKING CODE marking code ff SMD Transistor TRANSISTOR SMD MARKING CODE BS t marking code ff p SMD Transistor smd marking mop NF marking TRANSISTOR SMD c4 marking TRANSISTOR SMD nf c1 marking TRANSISTOR SMD nf c4 g1 7 TRANSISTOR SMD MARKING CODE PDF

    tp0604

    Abstract: No abstract text available
    Text: TP0604 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This


    Original     		TP0604 MS-013, DSFP-TP0604 A112107 PDF

    LM7805 smd

    Abstract: LM7805 smd 8 pin LM7805 M SMD SMD TRANSISTOR MARKING l4 LM7805 smd transistor marking wa LM7805 05 lm7805 datasheet C17-R2 elna ds
    Text: PTF180101M High Power RF LDMOS Field Effect Transistor 10 W, 1.0 – 2.0 GHz Description The PTF180101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 1 to 2 GHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in a small


    Original     		PTF180101M PTF180101M 10-watt PG-RFP-10 LM7805 smd LM7805 smd 8 pin LM7805 M SMD SMD TRANSISTOR MARKING l4 LM7805 smd transistor marking wa LM7805 05 lm7805 datasheet C17-R2 elna ds PDF

    FH1G

    Abstract: No abstract text available
    Text: FH1-G High Dynamic Range FET Applications • • • • Mobile Infrastructure CATV / DBS W-LAN / ISM Defense / Homeland Security 1-G FH SOT-89 Package Product Features • • • • • • • • Product Features 50 – 4000 MHz Low Noise Figure 18 dB Gain


    Original     		OT-89 FH1G PDF

    LM7805 M SMD

    Abstract: LM7805 smd C5 MARKING TRANSISTOR lm7805 datasheet future LM7805 smd 8 pin elna 50v transistor smd marking ND LM7805 PTF180101M TPSE106K050R0400
    Text: PTF180101M High Power RF LDMOS Field Effect Transistor 10 W, 1.0 – 2.0 GHz Description The PTF180101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 1 to 2 GHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in a small


    Original     		PTF180101M PTF180101M 10-watt LM7805 M SMD LM7805 smd C5 MARKING TRANSISTOR lm7805 datasheet future LM7805 smd 8 pin elna 50v transistor smd marking ND LM7805 TPSE106K050R0400 PDF

    LM7805 M SMD

    Abstract: LM7805 smd LM7805 footprint PG-RFP-10 RO4320 smd transistor marking C14 8 LM7805 smd transistor marking L5 LM7805 smd VOLTAGE REGULATOR elna 50v
    Text: PTF180101M High Power RF LDMOS Field Effect Transistor 10 W, 1.0 – 2.0 GHz Description The PTF180101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 1 to 2 GHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in a small


    Original     		PTF180101M PTF180101M 10-watt PG-RFP-10 LM7805 M SMD LM7805 smd LM7805 footprint PG-RFP-10 RO4320 smd transistor marking C14 8 LM7805 smd transistor marking L5 LM7805 smd VOLTAGE REGULATOR elna 50v PDF

    SITP

    Abstract: TP0604 TP0604N3 SOW MARKING
    Text: TP0604 P-Channel Enhancement-Mode Vertical DMOS FET Features ► ► ► ► ► ► ► General Description Low threshold -2.4V max. High input impedance Low input capacitance (95pF typical) Fast switching speeds Low on-resistance Free from secondary breakdown


    Original     		TP0604 DSFP-TP0604 A022309 SITP TP0604 TP0604N3 SOW MARKING PDF

    TP0604

    Abstract: No abstract text available
    Text: TP0604 P-Channel Enhancement-Mode Vertical DMOS FET Features ► ► ► ► ► ► ► ► General Description Low threshold -2.4V max. High input impedance Low input capacitance (95pF typical) Fast switching speeds Low on-resistance Free from secondary breakdown


    Original     		TP0604 DSFP-TP0604 A091608 PDF

    marking n3

    Abstract: TN0604N3 75E1 MS-013 TN0604 TN0604N3-G TN0604WG-G n-channel fet to-92
    Text: TN0604 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This


    Original     		TN0604 140pF MS-013, DSFP-TN0604 A102507 marking n3 TN0604N3 75E1 MS-013 TN0604 TN0604N3-G TN0604WG-G n-channel fet to-92 PDF

    smd transistor marking A2

    Abstract: TRANSISTOR SMD MARKING CODE 42 transistor smd marking 457 smd transistor 33 05 transistor smd code marking nc g TRANSISTOR SMD MARKING CODE PHP11N06
    Text: Philips Semiconductors Product specification N-channel TrenchMOS transistor Logic level FET FEATURES PHP11N06LT, PHB11N06LT PHD11N06LT SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Low on-state resistance • Fast switching • Logic level compatible


    Original     		PHP11N06LT, PHB11N06LT PHD11N06LT PHP11N06LT O220AB) OT404 PHD11N06LT smd transistor marking A2 TRANSISTOR SMD MARKING CODE 42 transistor smd marking 457 smd transistor 33 05 transistor smd code marking nc g TRANSISTOR SMD MARKING CODE PHP11N06 PDF

    TRANSISTOR SMD MARKING CODE 97

    Abstract: SMD TRANSISTOR MARKING 71 transistor smd code marking nc g PHD21N06LT
    Text: Philips Semiconductors Product specification N-channel TrenchMOS transistor Logic level FET FEATURES PHP21N06LT, PHB21N06LT PHD21N06LT SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Low on-state resistance • Fast switching • Logic level compatible


    Original     		PHP21N06LT, PHB21N06LT PHD21N06LT PHP21N06LT O220AB) OT404 PHD21N06LT OT428 TRANSISTOR SMD MARKING CODE 97 SMD TRANSISTOR MARKING 71 transistor smd code marking nc g PDF

    marking code 38 SMD Transistor

    Abstract: smd diode marking 2v SMD TRANSISTOR MARKING code TJ transistor smd code marking tm transistor smd code marking nc g SMD footprint design TRANSISTOR SMD catalog transistor smd marking 457 PHP55N03LT
    Text: Philips Semiconductors Product specification N-channel TrenchMOS transistor Logic level FET FEATURES PHP55N03LT, PHB55N03LT PHD55N03LT SYMBOL • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance • Logic level compatible


    Original     		PHP55N03LT, PHB55N03LT PHD55N03LT PHP55N03LT O220AB) OT45N03LT PHD55N03LT PHP55N03LT marking code 38 SMD Transistor smd diode marking 2v SMD TRANSISTOR MARKING code TJ transistor smd code marking tm transistor smd code marking nc g SMD footprint design TRANSISTOR SMD catalog transistor smd marking 457 PDF

    phd50n03

    Abstract: SMD fet MARKING 34 MARKING code V0 SMD TRANSISTOR SMD MARKING CODE 97 smd TRANSISTOR code marking 013
    Text: Philips Semiconductors Product specification N-channel TrenchMOS transistor Logic level FET FEATURES PHP50N03LT, PHB50N03LT PHD50N03LT SYMBOL • ’Trench’ technology • Very low on-state resistance • Fast switching • High thermal cycling performance


    Original     		PHP50N03LT, PHB50N03LT PHD50N03LT PHP50N03LT O220AB) PHD50N03LT PHB50N03LT; phd50n03 SMD fet MARKING 34 MARKING code V0 SMD TRANSISTOR SMD MARKING CODE 97 smd TRANSISTOR code marking 013 PDF

    TP0604

    Abstract: No abstract text available
    Text: Supertex inc. TP0604 P-Channel Enhancement-Mode Vertical DMOS FET Features ► ► ► ► ► ► ► General Description Low threshold -2.4V max. High input impedance Low input capacitance (95pF typical) Fast switching speeds Low on-resistance Free from secondary breakdown


    Original     		TP0604 DSFP-TP0604 A041309 TP0604 PDF

    TP0604

    Abstract: No abstract text available
    Text: Supertex inc. P-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► General Description Low threshold -2.4V max. High input impedance Low input capacitance (95pF typical) Fast switching speeds Low on-resistance


    Original     		DSFP-TP0604 B031411 TP0604 PDF

    b0705

    Abstract: No abstract text available
    Text: Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► TN0604 General Description Low threshold 1.6V max. High input impedance Low input capacitance (140pF typical) Fast switching speeds Low on-resistance


    Original     		TN0604 DSFP-TN0604 B070511 b0705 PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification N-channel TrenchMOS transistor Logic level FET FEATURES PHP69N03LT, PHB69N03LT PHD69N03LT SYMBOL • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance • Logic level compatible


    Original     		PHP69N03LT, PHB69N03LT PHD69N03LT PHP69N03LT O220AB) PHD69N03LT PDF

    sitn

    Abstract: marking n3 TN0604N3-G 125OC TN0604 TN0604WG-G 3V02 D0804 SiTN 06
    Text: Supertex inc. TN0604 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This


    Original     		TN0604 140pF DSFP-TN0604 A022309 sitn marking n3 TN0604N3-G 125OC TN0604 TN0604WG-G 3V02 D0804 SiTN 06 PDF

    transistor smd code marking nc

    Abstract: smd transistor marking A2 transistor smd code marking nc g TRANSISTOR SMD MARKING CODE 42
    Text: Philips Semiconductors Product specification N-channel TrenchMOS transistor Logic level FET FEATURES PHP11N06LT, PHB11N06LT PHD11N06LT SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Low on-state resistance • Fast switching • Logic level compatible


    Original     		PHP11N06LT, PHB11N06LT PHD11N06LT PHP11N06LT O220AB) OT404 PHD11N06LT transistor smd code marking nc smd transistor marking A2 transistor smd code marking nc g TRANSISTOR SMD MARKING CODE 42 PDF

    marking L1 fet

    Abstract: 432 transistor
    Text: GN DC solid state relays • ■ ■ ■ ■ ■ FET transistor versions 10, 15 and 30 A Bipolar transistor version 10 A Control voltage : 3 to 32 V c Optimum thermal response Available with or without protective cover UL/cUL, TUV approval and CE marking Output specifications


    Original     		PDF

    TN0604WG-G

    Abstract: 75E1 TN0604 TN0604N3-G
    Text: TN0604 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This


    Original     		TN0604 140pF DSFP-TN0604 A022309 TN0604WG-G 75E1 TN0604 TN0604N3-G PDF

    transistor smd code marking 404

    Abstract: transistor smd code marking .404 transistor SMD MARKING CODE 882 transistor SMD MARKING CODE NB marking code NB TRANSISTOR SMD MARKING CODE BS t TRANSISTOR SMD MARKING CODE BS s NXP SOT143R MSL TRANSISTOR SMD MARKING CODE 1v marking code ff SMD Transistor
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF1109; BF1109R; BF1109WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1997 Sep 03 File under Discrete Semiconductors, SC07 1997 Dec 08 Philips Semiconductors Product specification N-channel dual-gate MOS-FETs


    Original     		BF1109; BF1109R; BF1109WR BF1109WR BF1109 BF1109R ICP1020807 transistor smd code marking 404 transistor smd code marking .404 transistor SMD MARKING CODE 882 transistor SMD MARKING CODE NB marking code NB TRANSISTOR SMD MARKING CODE BS t TRANSISTOR SMD MARKING CODE BS s NXP SOT143R MSL TRANSISTOR SMD MARKING CODE 1v marking code ff SMD Transistor PDF

    CBT3306

    Abstract: CBT3306D CBT3306PW
    Text: CBT3306 Dual bus switch Rev. 05 — 25 March 2010 Product data sheet 1. General description The CBT3306 dual FET bus switch features independent line switches. Each switch is disabled when the associated output enable nOE input is HIGH. The CBT3306 is characterized for operation from −40 °C to +85 °C.


    Original     		CBT3306 CBT3306 JESD78B JESD22-A114F JESD22-C101D CBT3306D CBT3306D CBT3306PW PDF

    TRANSISTOR LIZ

    Abstract: No abstract text available
    Text: TN0604 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This


    Original     		TN0604 140pF DSFP-TN0604 A091608 TRANSISTOR LIZ PDF