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    MARKING L2 SOT23 Search Results

    MARKING L2 SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy

    MARKING L2 SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SST502

    Abstract: SST5114 SST503 SST504 SST505 SST506 SST507 SST508 SST509 SST510
    Text: SST502 Series Current Regulator Diodes—POV min 45 V SST502 SST503 SST504 SST505 SST506 SST507 SST508 SST509 SST510 SST511 TO-236 (SOT-23) Product Summary Anode Part Number Typ IF (mA) Marking Part Number Typ IF (mA) Marking SST502 0.43 L2 SST507 1.80 L7


    Original     		PDF SST502 SST502 SST503 SST504 SST505 SST506 SST507 SST508 SST509 SST510 SST5114 SST503 SST504 SST505 SST506 SST507 SST508 SST509 SST510

    SST511

    Abstract: SST506 SST5114 Diode SOT-23 marking L5 SST502 SST503 SST504 SST505 SST507 SST508
    Text: SST502 Series Current Regulator Diodes—POV min 45 V SST502 SST503 SST504 SST505 SST506 SST507 SST508 SST509 SST510 SST511 TO-236 (SOT-23) Product Summary Anode Part Number Typ IF (mA) Marking Part Number Typ IF (mA) Marking SST502 0.43 L2 SST507 1.80 L7


    Original     		PDF SST502 SST502 SST503 SST504 SST505 SST506 SST507 SST508 SST509 SST510 SST511 SST506 SST5114 Diode SOT-23 marking L5 SST503 SST504 SST505 SST507 SST508

    Untitled

    Abstract: No abstract text available
    Text: DRA2123E Silicon PNP epitaxial planar type For digital circuits Complementary to DRC2123E Unit: mm • Features  Low collector-emitter saturation voltage VCE sat  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)  Marking Symbol: L2


    Original     		PDF DRA2123E DRC2123E UL-94 DRA2123E0L SC-59A O-236ts.

    Field-Effect Transistors

    Abstract: SOT54variant diodes PACKAGE
    Text: DISCRETE SEMICONDUCTORS Package outlines Small-signal Field-effect Transistors and Diodes 1999 May 11 PACKAGE INFORMATION Page SOD68 . SOD110 . SOD323 . SOD523 . SOT23 . SOT54 . SOT54variant . SOT143B . SOT143R . SOT323 . SOT343N


    Original     		PDF OD110 OD323 OD523 OT54variant OT143B OT143R OT323 OT343N OT343R OT363 Field-Effect Transistors SOT54variant diodes PACKAGE

    DMN62D1SFB

    Abstract: No abstract text available
    Text: DMN62D1SFB 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS ADVANCE INFORMATION 60V Features and Benefits 2 RDS(on) Max ID Max @ TA = +25°C • Footprint of just 0.6mm – thirteen times smaller than SOT23  Low On-Resistance 1.4 @ VGS= 10V


    Original     		PDF DMN62D1SFB DS35252 DMN62D1SFB

    DMN62D1SFB

    Abstract: No abstract text available
    Text: DMN62D1SFB 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS on Max ID Max @ TA = +25C • Footprint of just 0.6mm – thirteen times smaller than SOT23  Low On-Resistance 1.4 @ VGS= 10V 0.41A  Low Gate Threshold Voltage 1.6 @ VGS= 4.5V


    Original     		PDF DMN62D1SFB DS35252 DMN62D1SFB

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated DMN3730UFB4 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • 0.4mm ultra low profile package for thin application 0.9A   0.6mm package footprint, 10 times smaller than SOT23 Low VGS th , can be driven directly from a battery


    Original     		PDF DMN3730UFB4 AEC-Q101 DS35017

    824022

    Abstract: WE-TVS W22XY sot23 marking JB tlp 8a dut79
    Text: Specification for release Customer : Ordercode: Description: Package: 824022 TVS Diode Array WE-TVS SOT23-3L DATUM / DATE : 2009-02-03 A Features: B Schematic and Pin Configuration: • ESD Protection for 2 Lines - bidirectional • Provide ESD Protection for each line to


    Original     		PDF OT23-3L 5/50ns) OT23-3L UL94V-0 D-74638 824022 WE-TVS W22XY sot23 marking JB tlp 8a dut79

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated DMP21D0UFB4 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS -20V Features and Benefits RDS(on) ID @ TA = 25°C 495mΩ @ VGS = -4.5V -0.77A 690mΩ @ VGS = -2.5V -0.67A 960mΩ @ VGS = -1.8V -0.57A 2 Footprint of just 0.6mm – thirteen times smaller than SOT23


    Original     		PDF DMP21D0UFB4 AEC-Q101 DS35279

    UL26

    Abstract: 6L-USBLC6-2SC6 USBLC6-2SC6 STMicroelectronics date code format ecopack SMP75-8 JESD97 marking illustrations
    Text: USBLC6-2 Very low capacitance ESD protection Features • ■ ■ ■ ■ ■ 2 data lines protection Protects VBUS Very low capacitance: 3.5 pF max. Very low leakage current: 150 nA max. SOT-666 and SOT23-6L packages RoHS compliant SOT23-6L USBLC6-2SC6 Benefits


    Original     		PDF OT-666 OT23-6L OT23-6L OT-666 UL26 6L-USBLC6-2SC6 USBLC6-2SC6 STMicroelectronics date code format ecopack SMP75-8 JESD97 marking illustrations

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated DMP21D0UFB4 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS -20V Features and Benefits RDS(on) ID @ TA = 25°C 495mΩ @ VGS = -4.5V -0.77A 690mΩ @ VGS = -2.5V -0.67A 960mΩ @ VGS = -1.8V -0.57A 2 Footprint of just 0.6mm – thirteen times smaller than SOT23


    Original     		PDF DMP21D0UFB4 AEC-Q101 DS35279

    Untitled

    Abstract: No abstract text available
    Text: BFR94A NPN 5 GHz wideband transistor Rev. 3 — 15 November 2010 Product data sheet 1. Product profile 1.1 General description NPN wideband transistor in a plastic SOT23 package. PNP complement; BFT92 1.2 Features and benefits ̈ ̈ ̈ ̈ High power gain Low noise figure


    Original     		PDF BFR94A BFT92 AEC-Q101

    Bfr94a

    Abstract: BFT92 BFR90A BFR94
    Text: BFR94A NPN 5 GHz wideband transistor Rev. 3 — 15 November 2010 Product data sheet 1. Product profile 1.1 General description NPN wideband transistor in a plastic SOT23 package. PNP complement; BFT92 1.2 Features and benefits „ „ „ „ High power gain Low noise figure


    Original     		PDF BFR94A BFT92 AEC-Q101 Bfr94a BFT92 BFR90A BFR94

    BFS17A

    Abstract: MSB003 E2p transistor E2p device marking Transistor E2P
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFS17A NPN 3 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A DESCRIPTION NPN transistor in a plastic SOT23 package.


    Original     		PDF BFS17A MSB003 BFS17A MSB003 E2p transistor E2p device marking Transistor E2P

    TVS 824001

    Abstract: 824001 WE-TVS TVS 400 marking JB sot23 sot23 marking JB EMMA2
    Text: Specification for release Customer : Ordercode: Description: Package: 824001 TVS Diode Array WE-TVS SOT23-6L DATUM / DATE : 2008-10-13 A Features: B Schematic and Pin Configuration: • ESD Protection for 4 high-speed I/O channels and VDD • Provide ESD protection for each channel to


    Original     		PDF OT23-6L 5/50ns) OT23-6L UL94V-0 D-74638 TVS 824001 824001 WE-TVS TVS 400 marking JB sot23 sot23 marking JB EMMA2

    WE-TVS

    Abstract: 824014 DIODE MARKING CODE LAYOUT G SOT23 w14 wurth 3aw14
    Text: Specification for release Customer : Ordercode: Description: Package: 824014 TVS Diode Array WE-TVS SOT23-6L DATUM / DATE : 2008-10-13 A Features B Schematic and Pin Configuration: • ESD Protection for 4 high-speed I/O channels and VDD • Provide ESD protection for each channel to


    Original     		PDF OT23-6L OT23-6L UL94V-0 D-74638 WE-TVS 824014 DIODE MARKING CODE LAYOUT G SOT23 w14 wurth 3aw14

    WE-TVS 824011

    Abstract: 824011 WE-TVS DIODE MARKING CODE LAYOUT G SOT23
    Text: Specification for release Customer : Ordercode: Description: Package: 824011 TVS Diode Array WE-TVS SOT23-5L DATUM / DATE : 2008-10-13 A Features: B Schematic and Pin Configuration: • ESD Protection for 2 high-speed I/O channels and VDD • Provide ESD protection for each channel to


    Original     		PDF OT23-5L 5/50ns) OT23-5L UL94V-0 D-74638 WE-TVS 824011 824011 WE-TVS DIODE MARKING CODE LAYOUT G SOT23

    E2p 28 transistor

    Abstract: transistor DATA REFERENCE handbook RF TRANSISTOR 2.5 GHZ s parameter E2p device marking marking code 10 sot23 marking code ce SOT23 RF NPN POWER TRANSISTOR 2.5 GHZ BFS17A MSB003
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFS17A NPN 3 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A DESCRIPTION NPN transistor in a plastic SOT23 package.


    Original     		PDF BFS17A MSB003 E2p 28 transistor transistor DATA REFERENCE handbook RF TRANSISTOR 2.5 GHZ s parameter E2p device marking marking code 10 sot23 marking code ce SOT23 RF NPN POWER TRANSISTOR 2.5 GHZ BFS17A MSB003

    WE-TVS 824015

    Abstract: 824015 WE-TVS SOT23-6L Marking Code sot23 marking JB SOT23 component marking code 5a
    Text: Specification for release Customer : Ordercode: Description: Package: 824015 TVS Diode Array WE-TVS SOT23-6L DATUM / DATE : 2008-10-13 A Features: B Schematic and Pin Configuration: • ESD Protection for 4 high-speed I/O channels and VDD • Provide ESD protection for each channel to


    Original     		PDF OT23-6L 5/50ns) OT23-6L UL94V-0 D-74638 WE-TVS 824015 824015 WE-TVS SOT23-6L Marking Code sot23 marking JB SOT23 component marking code 5a

    BFS17A

    Abstract: MSB003
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFS17A NPN 3 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September1995 Philips Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A DESCRIPTION NPN transistor in a plastic SOT23 package.


    Original     		PDF BFS17A September1995 MSB003 BFS17A MSB003

    UL26

    Abstract: No abstract text available
    Text: USBLC6-2 Very low capacitance ESD protection Features • 2 data-line protection ■ Protects VBUS ■ Very low capacitance: 3.5 pF max. ■ Very low leakage current: 150 nA max. ■ SOT-666 and SOT23-6L packages ■ RoHS compliant SOT23-6L USBLC6-2SC6 Figure 1.


    Original     		PDF OT-666 OT23-6L OT23-6L OT-666 UL26

    USBLC6-2

    Abstract: UL26 USBLC6-2P6 marking illustrations
    Text: USBLC6-2 Very low capacitance ESD protection Features • 2 data-line protection ■ Protects VBUS ■ Very low capacitance: 3.5 pF max. ■ Very low leakage current: 150 nA max. ■ SOT-666 and SOT23-6L packages ■ RoHS compliant SOT23-6L USBLC6-2SC6 Figure 1.


    Original     		PDF OT-666 OT23-6L USBLC6-2 UL26 USBLC6-2P6 marking illustrations

    GSOT05CL-V

    Abstract: No abstract text available
    Text: GSOT05CL-V Vishay Semiconductors Two-Line ESD-Protection in SOT23-3L Features • Two-line ESD-protection device • ESD-immunity acc. IEC 61000-4-2 ± 30 kV contact discharge ± 30 kV air discharge • Space saving SOT23-3L package • AEC-Q101 qualified


    Original     		PDF GSOT05CL-V OT23-3L OT23-3L AEC-Q101 2002/95/EC 2002/96/EC GSOT05CL-V-G-08 GSOT05CL-V

    Untitled

    Abstract: No abstract text available
    Text: LM4041 Precision micropower shunt voltage reference Datasheet - production data Description SOT23-3L The LM4041 is a micropower shunt voltage reference, providing a stable 1.225 V output voltage, with an initial accuracy of 0.1% @ 25 °C and a low temperature coefficient. Available in


    Original     		PDF LM4041 OT23-3L LM4041 OT323-5L OT23-3L OT323-5L DocID018817