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    MARKING LDQB Search Results

    MARKING LDQB Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    MARKING LDQB Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SoRIMM

    Abstract: ic marking B48 711 B34 a64 pcb rdram 600 mhz marking a20 5pin
    Text: Advance Information RAMBUS Rambus® SO-RIMM Module with 128/144Mb RDRAMs Overview Key Timing Parameters The Rambus® SO-RIMM™ module is a general purpose high-performance memory subsystem suitable for a broad range of applications including computer memory, mobile “Thin and Light” PCs,


    Original     		128/144Mb 128Mb/144Mb DL0076 SoRIMM ic marking B48 711 B34 a64 pcb rdram 600 mhz marking a20 5pin PDF

    ic marking B48

    Abstract: a80 marking code MARKING B83 marking A31 marking code B38 G100 S100
    Text: Rambus RIMM Module with 256/288Mb RDRAMs ® RAMBUS Overview Key Timing Parameters The Rambus® RIMM™ module is a general purpose high-performance memory module suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other


    Original     		256/288Mb DL0110 DL0110 ic marking B48 a80 marking code MARKING B83 marking A31 marking code B38 G100 S100 PDF

    a80 marking code

    Abstract: RDRAM G100 S100 marking code B38 marking A86 gerber 55-100
    Text: Preliminary Information RAMBUS Rambus® RIMM Module with 64/72Mb RDRAMs Overview Key Timing Parameters The Rambus® RIMM™ module is a general purpose high-performance memory module suitable for use in a broad range of applications including computer


    Original     		64/72Mb 64Mb/72Mb DL0078 DL0078 a80 marking code RDRAM G100 S100 marking code B38 marking A86 gerber 55-100 PDF

    MARKING B83

    Abstract: A74 marking diode u2 a90 marking A32 HYR163200G-653 HYR163200G-745 HYR163200G-840 HYR163200G-845 HYR183200G-653 HYR183200G-745
    Text: HYR16 18 3200G 64/72 MByte RIMM Modules Direct RDRAM RIMM Modules Perliminary Information Rev. 0.9 Features Overview n The Direct Rambus RIMM™ module is a general purpose high-performance memory subsystem suitable for use in a broad range of applications including


    Original     		HYR16 3200G 600MHz 800MHz 128MB, MARKING B83 A74 marking diode u2 a90 marking A32 HYR163200G-653 HYR163200G-745 HYR163200G-840 HYR163200G-845 HYR183200G-653 HYR183200G-745 PDF

    SoRIMM

    Abstract: marking A77 5-pin Dl006
    Text: Advance Information RAMBUS Rambus® SO-RIMM Module with 128/144Mb RDRAMs Overview Key Timing Parameters The Rambus® SO-RIMM™ module is a general purpose high-performance memory subsystem suitable for a broad range of applications including computer memory, mobile “Thin and Light” PCs,


    Original     		128/144Mb 128Mb/144Mb DL0076 SoRIMM marking A77 5-pin Dl006 PDF

    Device marking code B12 B13 B14 B15 B16

    Abstract: MARKING b56 Device marking code B52 marking A78 a80 marking code marking code B49 a64 marking code A45 interface marking code B38 HS032E02B
    Text: 32MB SO-RIMMTM Module with 128/144 Mb RDRAMs HCD SO-RIMM Memory Module Specification GENERAL DESCRIPTION This document outlines specifications for HCD’s SO-RIMM Module which consists of 128Mb / 144Mb Direct Rambus DRAM devices. HCD supports applications with 600, 700 and 800 MHz speed grades in both ECC and non-ECC


    Original     		128Mb 144Mb HS032N02E HS032N02D HS032N02C HS032N02B HS032E02E HS032E02D HS032E02C HS032E02B Device marking code B12 B13 B14 B15 B16 MARKING b56 Device marking code B52 marking A78 a80 marking code marking code B49 a64 marking code A45 interface marking code B38 HS032E02B PDF

    Untitled

    Abstract: No abstract text available
    Text: MS18R3266AH0 Revision History Version 0.1 November 2003 - Preliminary - First Copy - Based on the 1.0 ver. (July 2002) 288Mbit D-die SO-RIMM Module Datasheet. Version 1.0 (May 2004) - Eliminate "Preliminary" Page 0 Rev. 1.0 May 2004 MS18R3266AH0 (32Mx18)*6pcs SO-RIMM™ based on 576Mb A-die, 32s banks,32K/32ms Refresh, 2.5V


    Original     		MS18R3266AH0 288Mbit 32Mx18) 576Mb 32K/32ms PDF

    MARKING CODE B82

    Abstract: a87 marking Marking b66 marking a86 MARKING B83 marking a75
    Text: MR18R162WAG0 Change History Version 1.0 January 2002 * First copy. * Based on the 1.0 ver. 288Mbit RIMM Module Datasheet Version 1.1 (July 2002) * Based on the 1.0 ver.(January 2002) 288Mbit A-die 32d RIMM Module Datasheet * eliminate "Target" etc. Page 0


    Original     		MR18R162WAG0 288Mbit 16Mx18) 32pcs 288Mb 16K/32ms MARKING CODE B82 a87 marking Marking b66 marking a86 MARKING B83 marking a75 PDF

    A74 marking

    Abstract: a80 marking code MS18R3266AH0-CT9 a74 marking code diode code B74 marking A32 marking code B38
    Text: MS18R3266AH0 Preliminary Revision History Version 0.1 November 2003 - Preliminary - Based on the 1.0 ver. (July 2002) 288Mbit D-die SO-RIMM Module Datasheet. Page 0 Rev. 0.1 Nov. 2003 MS18R3266AH0 Preliminary (32Mx18)*6pcs SO-RIMM™ based on 576Mb A-die, 32s banks,32K/32ms Refresh, 2.5V


    Original     		MS18R3266AH0 288Mbit 32Mx18) 576Mb 32K/32ms A74 marking a80 marking code MS18R3266AH0-CT9 a74 marking code diode code B74 marking A32 marking code B38 PDF

    kmmr18r88c1-rk8

    Abstract: rg6 f connector 750 B36
    Text: KMMR16R84 6/8/C/G AC1 KMMR18R84(6/8/C/G)AC1 4/6/8/12/16d RIMMTM Module with 128Mb RDRAMs 4/6/8/12/16d RIMMTM Module with 144Mb RDRAMs Revision History Version 1.0 (August 1999) - Preliminary - First copy. - Based on the Rambus RIMM Datasheet Rev.1.0. Version 1.01 (October 1999)


    Original     		KMMR16R84 KMMR18R84 4/6/8/12/16d 128Mb 144Mb 127mm. kmmr18r88c1-rk8 rg6 f connector 750 B36 PDF

    a80 marking code

    Abstract: MR18R162WDG0-CM8 B83 004 marking code B38 MR18R162WDG0 MR18R162WDG0-CK8 marking A70 marking code b84
    Text: MR18R162WDG0 Change History Version 1.0 July 2002 * First copy. * Based on the 1.1 ver.(July 2002) 288Mbit A-die 32d RIMM Module Datasheet Page 0 Version 1.0 July. 2002 MR18R162WDG0 (16Mx18)*32pcs RIMM Module based on 288Mb D-die, 32s banks,16K/32ms Ref, 2.5V


    Original     		MR18R162WDG0 288Mbit 16Mx18) 32pcs 288Mb 16K/32ms a80 marking code MR18R162WDG0-CM8 B83 004 marking code B38 MR18R162WDG0 MR18R162WDG0-CK8 marking A70 marking code b84 PDF

    a74 marking code

    Abstract: MARKING B82 MARKING B83 a80 marking code B11 marking code Device marking code B12 B13 B14 B15 B16 marking A45 a64 marking code A79 marking code a86 diode
    Text: MR18R162WDG0 Change History Version 1.0 July 2002 * First copy. * Based on the 1.1 ver.(July 2002) 288Mbit A-die 32d RIMM Datasheet Page 0 Version 1.0 July. 2002 MR18R162WDG0 (16Mx18)*32pcs RIMMTM Module based on 288Mb D-die, 32s banks,16K/32ms Ref, 2.5V


    Original     		MR18R162WDG0 288Mbit 16Mx18) 32pcs 288Mb 16K/32ms a74 marking code MARKING B82 MARKING B83 a80 marking code B11 marking code Device marking code B12 B13 B14 B15 B16 marking A45 a64 marking code A79 marking code a86 diode PDF

    b41 Marking

    Abstract: No abstract text available
    Text: MR18R162WEG0 Change History Version 0.1 January 2004 * First copy. * Based on the 1.0 ver.(July 2002) 288Mbit D-die 32d RIMM Module Datasheet Version 1.0 (May 2004) * Eliminate "Preliminary" Page 0 Version 1.0 May 2004 MR18R162WEG0 (16Mx18)*32pcs RIMM Module based on 288Mb E-die, 32s banks,16K/32ms Ref, 2.5V


    Original     		MR18R162WEG0 288Mbit 16Mx18) 32pcs 288Mb 16K/32ms b41 Marking PDF

    A76 MARKING CODE

    Abstract: a77 package marking a80 marking code marking A32 marking A45 marking code B38 MR18R162WEG0-CM8 MARKING B17 MARKING CODE B82 marking a86
    Text: Preliminary MR18R162WEG0 Change History Version 0.1 January 2004 * First copy. * Based on the 1.0 ver.(July 2002) 288Mbit D-die 32d RIMM Module Datasheet Page 0 Version 0.1 Jan. 2004 Preliminary MR18R162WEG0 (16Mx18)*32pcs RIMM Module based on 288Mb E-die, 32s banks,16K/32ms Ref, 2.5V


    Original     		MR18R162WEG0 288Mbit 16Mx18) 32pcs 288Mb 16K/32ms A76 MARKING CODE a77 package marking a80 marking code marking A32 marking A45 marking code B38 MR18R162WEG0-CM8 MARKING B17 MARKING CODE B82 marking a86 PDF

    ck7 marking code

    Abstract: marking code B49 a35 marking code
    Text: MR16R0824 6/8/C/G AN1 MR18R0824(6/8/C/G)AN1 4/6/8/12/16d RIMMTM Module with 128Mb RDRAMs 4/6/8/12/16d RIMMTM Module with 144Mb RDRAMs Revision History Version 1.0 (August 1999) - Preliminary - First copy. - Based on the Rambus RIMM Datasheet Rev.1.0. Version 1.01 (October 1999)


    Original     		MR16R0824 MR18R0824 4/6/8/12/16d 128Mb 144Mb 127mm. ck7 marking code marking code B49 a35 marking code PDF

    MR18R0828AN1-CK8

    Abstract: ck7 marking code MR18R0824 marking code b35 gan1 marking B44
    Text: MR16R0824 6/8/C/G AN1 MR18R0824(6/8/C/G)AN1 Change History Version 1.0 (August 1999) - Preliminary * First copy. * Based on the Rambus RIMM Datasheet Rev.1.0. Version 1.01 (October 1999) Page No. Change Description 1 - Delete the part numbers of low power.


    Original     		MR16R0824 MR18R0824 127mm. MR18R0828AN1-CK8 ck7 marking code marking code b35 gan1 marking B44 PDF

    Untitled

    Abstract: No abstract text available
    Text: MS18R1622 4/8 DH0 Revision History Version 1.0 (July 2002) - Based on the 1.1 ver. (July 2002) 288Mbit A-die SO-RIMM Module Datasheet. Page 0 Rev. 1.0 July 2002 MS18R1622(4/8)DH0 (16Mx18)*2(4/8)pcs SO-RIMM™ based on 288Mb D-die, 32s banks,16K/32ms Refresh, 2.5V


    Original     		MS18R1622 288Mbit 16Mx18) 288Mb 16K/32ms PDF

    smd marking code lcsb

    Abstract: smd marking ldqb OFA1202 ldrb marking smd code marking LP3985 LDQB LDRB lcrb LCZB marking LCJB
    Text: LP3985 Micropower, 150mA Low-Noise Ultra Low-Dropout CMOS Voltage Regulator General Description Key Specifications The LP3985 is designed for portable and wireless applications with demanding performance and space requirements. LP3985 is stable with a small 1µF ± 30% ceramic or


    Original     		LP3985 150mA smd marking code lcsb smd marking ldqb OFA1202 ldrb marking smd code marking LP3985 LDQB LDRB lcrb LCZB marking LCJB PDF

    MARKING CODE 11gb

    Abstract: No abstract text available
    Text: MR18R326GAG0 Preliminary Change History Version 0.1 September 2003 - Preliminary * First copy. * Based on the 1.0 ver. (July 2002) 256/288Mbit D-die RIMM Datasheet Page 0 Version 0.1 Sept. 2003 MR18R326GAG0 Preliminary (32Mx18)*16pcs RIMMTM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V


    Original     		MR18R326GAG0 256/288Mbit 32Mx18) 16pcs 576Mb 32K/32ms MARKING CODE 11gb PDF

    marking A26

    Abstract: HYR1612820G-845 HYR1812820G-653 HYR1812820G-745 HYR1812820G-845 HYR1612820G-653 HYR1612820G-745 HYR1612820G-840 HYR1612 A52 LD
    Text: HYR 16xx20G/HYR 18xx20G Rambus RIMM Modules Direct RDRAM RIMM Modules with 144 Mbit RDRAMs Overview The Direct Rambus RIMM™ module is a general purpose high-performance memory subsystem suitable for use in a broad range of applications including computer memory, personal computers,


    Original     		16xx20G/HYR 18xx20G 256MB, 128MB, marking A26 HYR1612820G-845 HYR1812820G-653 HYR1812820G-745 HYR1812820G-845 HYR1612820G-653 HYR1612820G-745 HYR1612820G-840 HYR1612 A52 LD PDF

    MS18R1622AH0-CK8

    Abstract: MS18R1624AH0-CK8 MS18R1628AH0-CK8
    Text: MS18R1622 4/8 AH0-CK8 Preliminary Revision History Version 1.0 (December 2001) - First copy. - Based on the 1.1 ver. 256/288Mbit RDRAMs(A-die) base RIMM Datasheet. Rev.1.0 Dec. 2001 Page 0 MS18R1622(4/8)AH0-CK8 Preliminary ( 16Mx18)*2(4/8)pcs Rambus RIMM based on 288Mb M-die, 32s banks,16K/32ns Ref, 2.5V


    Original     		MS18R1622 256/288Mbit 16Mx18) 288Mb 16K/32ns MS18R1622AH0-CK8 MS18R1624AH0-CK8 MS18R1628AH0-CK8 PDF

    a80 marking code

    Abstract: marking A32 marking A86 marking code B38 samsung electronics logo
    Text: MR16R0828ER T 0 Change History Version 1.0 (July 2002) * First copy. * Based on the 1.0ver. 128Mb D-die Consumer RIMM Module Datasheet. Page 0 Version 1.0 July 2002 MR16R0828ER(T)0 (8Mx16)*8pcs Consumer RIMM Module based on 128Mb E-die, 32s banks,16K/32ms Ref, 2.5V


    Original     		MR16R0828ER 128Mb 8Mx16) 16K/32ms a80 marking code marking A32 marking A86 marking code B38 samsung electronics logo PDF

    Untitled

    Abstract: No abstract text available
    Text: MS18R1622 4/8 AH0 Revision History Version 1.0 (December 2001) - First copy. - Based on the 1.1 ver. 256/288Mbit RDRAMs(A-die) base RIMM Datasheet. Version 1.1(July 2002) - Based on the 1.0 ver. 256/288Mbit RDRAMs(A-die) base SO-RIMM Datasheet. - Add 1066MHz-35 binning


    Original     		MS18R1622 256/288Mbit 1066MHz-35 16Mx18) 288Mb 16K/32ms PDF

    marking B44

    Abstract: DH0 165
    Text: MS18R1622 4/8 DH0 Revision History Version 1.0 (July 2002) - Based on the 1.1 ver. 256/288Mbit RDRAMs(A-die) base SO-RIMM Datasheet. Rev. 1.0 July 2002 Page 0 MS18R1622(4/8)DH0 ( 16Mx18)*2(/4/8)pcs SO-RIMM based on 288Mb D-die, 32s banks,16K/32ms Refresh, 2.5V


    Original     		MS18R1622 256/288Mbit 16Mx18) 288Mb 16K/32ms marking B44 DH0 165 PDF