MARKING LTRA Search Results

Contextual Info: Radial Lead Capacitors Marking information/Ordering information Marking information All encapsulated capacitors are marked with:- Capacitance value, tolerance, rated d.c. voltage, dielectric, and where size permits Syfer logo. All moulded units are marked additionally with year and week of manufacture, and capacitance value on

MARKing l4T

Abstract: T460 t930 ERA91-02 mat03
Contextual Info: E R A 9 1-02 0 .5A _ • * » - * » : O u tlin e D ra w in g s LOW LOSS SUPER HIGH SPEED RECTIFIER ■ t t * : Features m f r m , 5 m m t '^ m a «m ■ ^ T jv U ltra small package. Marking Possible fo r 5m m pitch a utom atic insertion. t> ? - □ - V : Ê

ERA38

Abstract: irsy
Contextual Info: E R A 38 o.5A Outline Drawings FAST RECOVERY DIODE : Features • iti-a u : Marking S u p e r high speed sw itch in g • f f i ' J 5 m m l i 7 f £ » « ¡A U ltra sm all p a c k a g e . * 7 —□ — K : Ö C o lo r code : W hite Possible fo r 5 m m pitch a u to m a tic insertion

ERA85-009

Abstract: era85
Contextual Info: ERA85-009HA ; Outline Drawings S CHO TTKY BARRIER DIO DE □yHfc »V-P*-* \ +► \ / / f 0.56 f 1. .IsL 25MN. 25ML • ¡ î t ë ' Features • Vk ■ I I jk Low W : Marking S u p e r high speed s w itc h in g . ■■■■I 9 oi û H igh reliability by planer d e s ig n .

A323

Abstract: ERA83-006 era83 MARKING a322
Contextual Info: ERA83-006 i A * ± 'l'W 3? 4 * - V : Outline Drawings SCHO TTKY BARRIER DIODE Features • ifeVF : Marking Lo w V f tt 7 S u p e r h ig h speed s w itc h in g . Voltage class œV n 7 h Nq ¥ 4 * Lot No. O * H ig h re lia b ility by p la n e r d e s ig n .

jeida dram 88 pin

Contextual Info: M I lt^ P n N M T8D88C132 1 MEG x 32, 2 MEG x 16 IC D R AM C AR D IC DRAM CARD 4 MEGABYTES 1 MEG x 32, 2 MEG x 16 PIN ASSIG N M EN T End View 88-Pin Card (U-1) MARKING • Timing 60ns access 70ns access 80ns access PIN * SYMBOL PIN# Vss 31 NC 61 2 DQ0 32

ERA83-006

Contextual Info: ERA83-006 i A * ± 'l'W 3? 4 * - V : Outline Drawings SCHO TTKY BARRIER DIODE Features • ifeVF : Marking Lo w V f tt 7 S u p e r h ig h speed s w itc h in g . Voltage class œV n 7 h Nq ¥ 4 * Lot No. O * H ig h re lia b ility by p la n e r d e s ig n .

era85 diode

Contextual Info: '> a ’y | *+— Y • : Outline Drawings SCHOTTKY BARRIER DIODE Features • ftV P Low vF : Marking • 7>4'V*'s*f x d S u p e r h ig h speed s w itc h in g . HECfc r a ■ ■ ■¥ 9 01 a H ig h re lia b ility by p la n e r d e s ig n , • m m -h'J- § K ffi A T O

DS275

Abstract: os275 DS275E DS275S SN75154
Contextual Info: DS275 DALLAS s e m ic o n d u c to r DS275 Line-Powered RS-232 Transceiver Chip FEATURES PIN ASSIGNMENT • L o w -p o w e r serial transm itter/receiver for b a tte ry backed system s • Transm itter steals pow er from receive signal line to save power • U ltra -lo w static current, even when connected to

SMEW

Abstract: CTG-32R CTG-34S CTG34S 2nd year f.a CTG22r CTG-34 marking CTG ctg22s CTG-22R
Contextual Info: M SANKEN ELECTRIC CO LTD 35E D B L ' ^ ltra Fast Recovery Diodes 7 ? m 000D817 7 • S A K J ‘p ¿ 3-07 E V rm :7 0 ~ 400V E lo :5 .0 ~ 2 0 A 1 CTG rsm V Type NoN V (V ) 70 70 200 200 400 400 70 70 200 200 300 300 400 400 70 70 200 200 300 300 400

DF40PC3

Abstract: J532 SHINDENGEN DIODE
Contextual Info: Schottky Barrier Diode Twin Diode mnm DF40PC3 o u t lin e 30V 40A F e a tu re • SMD • î • SM D 3 V f = 0 .4 V • U ltra-Low V f=0.4V • High lo R ating-Sm all-R K G M a in U s e • /w x u -æ s B m t • Reverse connect protection for DC pow er source

Contextual Info: M SANKEN ELECTRIC CO LTD 35E D B L ' ^ltra Fast Recovery Diodes 7 ? m 000D817 7 • S A K J P 2 3 -Ö 7 E V rm : 70~ 400V Elo:5.0~ 20A CTG Type N o N 70 70 200 200 400 400 70 70 200 200 300 300 400 400 70 70 200 200 300 300 400 400 Tj CC If s m A) Tstg

Contextual Info: Schottky Barrier Diode Twin Diode mwm o u t lin e Package ! E-pack DE10PC3 U nitt mm W eight 0 2 6 « (T yp r " iMi 30 V 10A Feature • SM D • SM D • ÎS < 6 V f = 0 .4 V • U ltra-Low V f= 0 .4 V Type No. Main Use • Reverse connect protection for

Contextual Info: Schottky Barrier Diode Twin Diode mtm OUTLINE Package : E-pack DE5PC3 Unit-mm Weight 0.326g Typ 30V 5A Feature • SM D • SMD • î 2 ® V f =0.4V • U ltra-Low V f=0.4V • i J 'S = À l; j S î§ M • High lo R a tin g -S m all-PK G Main Use *y î ÿ x U - J i f ê K i h

Contextual Info: /A m RF/Microwave NPO Capacitors Ultra Low ESR, “U” Series, NPO Chip Capacitors G EN ER A L IN FORM ATION “U ” Series capacitors are NPO chip capacitors specially designed for “U ltra” low ESR for applications in the communication market. They

Contextual Info: Schottky Barrier Diode mtmm Single Diode o u t l in e D3FP3 U n it-m m W eight 0.16g T yp Package : 2F 30V 3A il mm Feature Q>- S m all S M D • Î bÎS V f=0.4V U ltra -L o w V f= 0 .4 V Main Use • K u / x U — ïÉ f ë B S ih • R everse c o n n e c t p ro te c tio n fo r

smd diode marking U1

Contextual Info: Schottky Barrier Diode Twin Diode mtm OUTLINE Package : E-pack DE10PC3 Unit-mm Weight 0.326g Typ 30 V 10A Feature • SMD • SMD • î 2 ® V f =0.4 V • U ltra -L o w V f=0.4V • iJ 'S = À l; jS î § M • High lo R a tin g -S m a ll-P K G Main Use

smd kir

Abstract: DIODE MARKING 9Y smd code marking book DIODE SMD CODE MARKING LG smd diode code 1_b DG1J10A J532 smd diode schottky code marking 1A smd code marking vk YJ-7
Contextual Info: Schottky Barrier Diode Single Diode m tm DG1J10A 100V n • iiS'JviySMD Weight 0.011 g Typ 1A 3.5 1 U ltra -sm all S M D • fílR = 1 L o w Ir =100|j A m 100/l/A (?) CD r • i2j®sy=0.8mm • U nit-m m Package : G 1F Feature a OUTLINE 1 1J71 1 QD°

smd code marking LF sot23

Abstract: Js SMD MARKING CODE SOT23 L9 BAT721C BAT721 BAT721A diode smd JS 8 BAT721C BAT721S smd diode code A2 smd code marking js
Contextual Info: Philips Semiconductors Product specification Schottky barrier double diodes BAT721 series PINNING FEATURES • U ltra high s w itc h in g s p e e d BAT721 PIN • L o w fo rw a rd v o lta g e • G u a rd ring p ro te c te d • S m a ll p la s tic S M D p a c k a g e .

DIODE marking 7BA

Abstract: sg 7ba silent relay H3 marking CSA22 diode marking code H5 relay low profile
Contextual Info: cP r ilT C T I THE p o s s i b i l i t i e s « he i nfi ni te JSILENT POWER RELAY 1 POLE—10 A LOW PROFILE TYPE IFTR-H3 SERIES • FEATURES • Pin co m p a tib le w ith w id e ly used V S and FTR -H1 series p o w e r relays • U ltra sile n t relay w ith pa tented un iq ue U -sh ap e spring. N oise

es marking, diode

Contextual Info: SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE 1SV229 VCO FOR UHF BAND RADIO • • U nit in mm U ltra Low Series Resistance : rs = 0.2fl Typ. Useful for Small Size Set M A X IM U M + 0.2 1.25 - OJ M . R ATINGS (Ta = 25°C) CHARACTERISTIC Reverse Voltage

1sv239

Abstract: X10016
Contextual Info: TOSHIBA 1SV239 Variable Capacitance Diode Unit in mm Silicon Epitaxial Planar Type VCO For UHF Ratio Features • U ltra L o w S eries R esistan ce : rs = 0.44£2 Typ. • Useful fo r Sm all Size S et o. i: Absolute Maximum Ratings (Ta = 25 C) CHARACTERISTIC

Contextual Info: / " T L i LTC1841 /LTC1842/LTC1843 TECHNOLOGY U ltralow Pow er Dual C o m p a ra to rs w ith R e fe re nce n t i A ß _ F€flTUR€S DCSCRIPTIOn • Ultralow Quiescent Current: 3.5|jA Typ ■ Open-Drain Outputs Typically Sink Greater Than 20mA ■ Wide Supply Range: LTC1841

Contextual Info: BCcomponenls Product specification U ltra p re cisian leaded r e s is t o r s FEATURES • Superior thin film technology • Exceptional low TC: ±02 to ±10 ppm/K • Super tight tolerance: ±0,01 to ±0,25% • Exceptional overall stability: class 0,02 • W ide ultra precision range: 22 f l to 301 k£2