n7 transistor
Abstract: marking n5 amplifier N6 Amplifier marking n6 transistor amplifier marking code n6 transistor N6 marking N7 2SC1654 sot-23 Marking N5 Marking N5
Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z 2SC1654 Pb High DC current gain:hFE=130 Typ Lead-free (VCE=3V,IC=15mA) z High voltage. APPLICATIONS z Audio frequency general purpose amplifier applications. SOT-23
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2SC1654
OT-23
BL/SSSTC096
n7 transistor
marking n5 amplifier
N6 Amplifier
marking n6 transistor
amplifier marking code n6
transistor N6
marking N7
2SC1654
sot-23 Marking N5
Marking N5
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Untitled
Abstract: No abstract text available
Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z 2SC1654 Pb High DC current gain:hFE=130 Typ Lead-free (VCE=3V,IC=15mA) z High voltage. APPLICATIONS z Audio frequency general purpose amplifier applications. SOT-23
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2SC1654
OT-23
BL/SSSTC096
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SC1654 TRANSISTOR NPN SOT–23 FEATURES High Frequency Power Amplifier Application Power Swithing Applications MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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OT-23
2SC1654
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N5 npn transistor
Abstract: marking N5 RF marking CODE n5 marking n5 amplifier marking CODE n5 amplifier n5 amplifier MSC3130T1
Text: LESHAN RADIO COMPANY, LTD. NPN RF Amplifier Transistor Surface Mount MSC3130T1 COLLECTOR 3 3 2 1 2 BASE 1 EMITTER CASE 318D–03, STYLE 1 SC–59 MAXIMUM RATINGS T A = 25 °C Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous
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MSC3130T1
N5 npn transistor
marking N5 RF
marking CODE n5
marking n5 amplifier
marking CODE n5 amplifier
n5 amplifier
MSC3130T1
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marking N5 mmic
Abstract: mmic n5 marking n5 amplifier RF TRANSISTOR 586 EDS-101105 NGA-586 RF amplifier GHz driver n5 359 rf amplifier marking n5 SIRENZA MARKING
Text: NGA-586 Product Description DC-5.5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices NGA-586 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5.5 GHz with
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NGA-586
NGA-586
EDS-101105
marking N5 mmic
mmic n5
marking n5 amplifier
RF TRANSISTOR 586
RF amplifier GHz
driver n5 359
rf amplifier marking n5
SIRENZA MARKING
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NGA-589
Abstract: marking n5 amplifier 6.0 GHZ marking n5 amplifier
Text: Product Description Stanford Microdevices NGA-589 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5.5 GHz with excellent thermal perfomance. The heterojunction increases
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NGA-589
NGA-589
EDS-100376
marking n5 amplifier 6.0 GHZ
marking n5 amplifier
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SIRENZA MARKING
Abstract: No abstract text available
Text: NGA-586 Product Description DC-5.5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices NGA-586 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5.5 GHz with
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NGA-586
NGA-586
EDS-101105
SIRENZA MARKING
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Untitled
Abstract: No abstract text available
Text: NGA-586 Product Description DC-5.5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices NGA-586 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5.5 GHz with
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NGA-586
NGA-586
EDS-101105
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NGA-586
Abstract: EDS-101105 marking n5 amplifier marking n5 DBM
Text: Product Description Stanford Microdevices NGA-586 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5.5 GHz with excellent thermal perfomance. The heterojunction increases
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NGA-586
NGA-586
EDS-101105
marking n5 amplifier
marking n5 DBM
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marking N5 mmic
Abstract: NGA589
Text: NGA-589 Product Description DC-5.5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices NGA-589 is a high performance InGaP/ GaAs HBT MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance
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NGA-589
NGA589
EDS-100376
marking N5 mmic
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marking N5 mmic
Abstract: marking n5 amplifier NGA-589 marking n5 amplifier 6.0 GHZ mmic n5
Text: NGA-589 Product Description DC-5.5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices NGA-589 is a high performance InGaP/ GaAs HBT MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance
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NGA-589
NGA-589
NGA589
EDS-100376
marking N5 mmic
marking n5 amplifier
marking n5 amplifier 6.0 GHZ
mmic n5
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LE-12T
Abstract: marking N5 mmic marking n5 amplifier
Text: NGA-589 Product Description DC-5.5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier High Gain : 19.2 dB at 1950 MHz Operates From Single Supply Low Thermal Resistance Package T -20 Applications LE T ORL -30 6 PA Driver Amplifier Cellular, PCS, GSM, UMTS
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NGA-589
NGA589
EDS-100376
LE-12T
marking N5 mmic
marking n5 amplifier
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2SC1654
Abstract: N5 npn transistor n7 transistor 2SC1654N5 marking n5 amplifier sot-23 Marking N5 marking n6 2SC1654N7 amplifier marking code n6 marking n6 transistor
Text: 2SC1654 0.05A , 180V NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURE High Frequency Power Amplifier Application Power Switching Applications A L 3 3
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2SC1654
OT-23
2SC1654-N5
2SC1654-N6
2SC1654-N7
18-Feb-2011
2SC1654
N5 npn transistor
n7 transistor
2SC1654N5
marking n5 amplifier
sot-23 Marking N5
marking n6
2SC1654N7
amplifier marking code n6
marking n6 transistor
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70GHz HEMT Amplifier
Abstract: No abstract text available
Text: NLB-300 RoHS Compliant & Pb-Free Product CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 10GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs PTP/PMP/ Military Radio Designs • Linear and Saturated Amplifiers
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NLB-300
10GHz
NLB-300
70GHz HEMT Amplifier
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Untitled
Abstract: No abstract text available
Text: THERMAL VARIABLE ATTENUATORS E-TA •FEATURES ■APPLICATIONS ● Flat VSWR characteristic to the temperature change. ● Linear attenuation characteristic to temperature fluctuation. ● RoHS compliant. ● Temperature compensation of microwave high power
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E-TA3216
E-TA2012
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Untitled
Abstract: No abstract text available
Text: NBB-500 RoHS Compliant & Pb-Free Product CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 4GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs PTP/PMP/ Military Radio Designs • Linear and Saturated Amplifiers
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NBB-500
NBB-500
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MMIC Amplifier Micro-X marking n5
Abstract: N5 micro-X Package marking N5 mmic
Text: NBB-500 RoHS & Pb-Free Product CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 4GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs PTP/PMP/ Military Radio Designs • Linear and Saturated Amplifiers
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NBB-500
NBB-500
NBB-500-D)
MMIC Amplifier Micro-X marking n5
N5 micro-X Package
marking N5 mmic
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MMIC Amplifier Micro-X marking n5
Abstract: No abstract text available
Text: NBB-500 RoHS Compliant & Pb-Free Product CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 4GHz Typical Applications • Narrow and Broadband Commercial and Military Radio Designs • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs PTP/PMP/ • Linear and Saturated Amplifiers
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NBB-500
NBB-500
MMIC Amplifier Micro-X marking n5
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MMIC Amplifier Micro-X marking D
Abstract: GaN Bias 25 watt marking n5 amplifier marking N5 mmic d marking Micro-X GaN amplifier marking N5 RF nitrogen coupling GHZ micro-X Package HEMT MMIC POWER AMPLIFIER
Text: NBB-500 RoHS Compliant & Pb-Free Product CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 4GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs PTP/PMP/ Military Radio Designs • Linear and Saturated Amplifiers
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NBB-500
NBB-500
MMIC Amplifier Micro-X marking D
GaN Bias 25 watt
marking n5 amplifier
marking N5 mmic
d marking Micro-X
GaN amplifier
marking N5 RF
nitrogen coupling
GHZ micro-X Package
HEMT MMIC POWER AMPLIFIER
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Untitled
Abstract: No abstract text available
Text: SILICON NPN EPITAXIAL TYPE HN1C01F U nit in mm AUD IO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. • • • • Small Package Dual Type High Voltage and High Current : V q ]jo = 50V, I q = 150mA (Max.) High hjrE : hpg = 120—400 Excellent hpE Linearity
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HN1C01F
150mA
100mA,
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2SA1873
Abstract: 2SC4944
Text: 2SA1873 TO SH IBA 2 S A 1 873 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. 2.110.1 Small Package (Dual Type) High Voltage and High Current •. v ^ — — — K n Vv , k j \j
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2SA1873
2SC4944
2SA1873
2SC4944
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VHF-UHF Band Low Noise Amplifier
Abstract: marking lob
Text: 2SC4315 SILICON NPN EPITAXIAL PLANAR TYPE VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS . Low Noise . NF=l.ldB, Unit in mm + 0.2 2.9 -0.3 Figure, High Gain. IS21ei 2=14dB f=lGHz i 2 »-E a 0.55 M A X I M U M RATINGS (Ta=25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage
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2SC4315
IS21ei
012IGURE
VHF-UHF Band Low Noise Amplifier
marking lob
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2SJ144
Abstract: No abstract text available
Text: SILICON P CHANNEL JUNCTION TYPE 2SJ144 AUDIO FREQUENCY AMPLIFIER APPLICATIONS. Unit in mm ANALOG SWITCH APPLICATIONS. 2.1 CONSTANT CURRENT APPLICATIONS. ± 0.1 1.2 5 ± 0 .1 1 IMPEDANCE CONVERTER APPLICATIONS. • High Breakdown Voltage: • High Input Impedance:
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2SJ144
270S2
2SJ144
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Untitled
Abstract: No abstract text available
Text: TOSHIBA RN5002 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN5002 Unit in mm MOTOR DRIVE CIRCUIT APPLICATIONS. POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. 4.6MA.X. With Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and Manufacturing Process
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RN5002
RN6002
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