9v 68
Abstract: No abstract text available
Text: Preliminary Preliminary SCA-4 Product Description Sirenza Microdevices SCA-4 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 4 GHz. The heterojunction increases breakdown voltage
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EDS-101394
9v 68
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HMC676LC3C
Abstract: No abstract text available
Text: ANALOG & MIXED -SIGNAL ICS, MODULES, SUBSYSTEMS & INSTRUMENTATION, DC - 110 GHZ AUTOMOTIVE Telematics & Sensors BROADBAND Cable Modem, CATV, DBS & VoIP Fixed Wireless, WiMAX & WiBro UWB & WirelessLAN CELLULAR INFRASTRUCTURE GSM, GPRS, CDMA, TD-SCDMA, WCDMA, UMTS & 4G / LTE
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OC-48
Modul1-8-8301-8450
HMC676LC3C
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NGA-589
Abstract: marking n5 amplifier 6.0 GHZ marking n5 amplifier
Text: Product Description Stanford Microdevices NGA-589 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5.5 GHz with excellent thermal perfomance. The heterojunction increases
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NGA-589
NGA-589
EDS-100376
marking n5 amplifier 6.0 GHZ
marking n5 amplifier
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HMC734
Abstract: AG602-89 HMC807LP6CE SPI op amp mar 4sm hmc849 HMC516 HMC332 hmc783lp6ce ERA-4SM EAR99
Text: g ra tin Ye ar s 25 Ce leb Inn ov ce vi y lit ion Qua at ᢳ ⏋ড়ֵো䲚៤⬉䏃ˈ 䲚៤ 䏃 ഫˈ ഫ ᄤ㋏㒳 Ҿ㸼 㒳 Ҿ㸼 DC - 110 GHZ ≑䔺⬉ᄤ Telematics & Sensors ᆑᏺ䗮ֵ Cable Modem, CATV, DBS & VoIP WiMAX, WiBro, WLAN & UWB
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OC-48
HMC734
AG602-89
HMC807LP6CE SPI
op amp mar 4sm
hmc849
HMC516
HMC332
hmc783lp6ce
ERA-4SM
EAR99
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hmc506
Abstract: HMC676LC3C
Text: g ra tin s Ye ar 25 Ce leb Inn ov ce vi y lit ion Qua at ANALOG & MIXED -SIGNAL ICS, MODULES, SUBSYSTEMS & INSTRUMENTATION, DC - 110 GHZ AUTOMOTIVE Telematics & Sensors BROADBAND Cable Modem, CATV, DBS & VoIP WiMAX, WiBro, WLAN & UWB CELLULAR INFRASTRUCTURE
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OC-48
hmc506
HMC676LC3C
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W88W
Abstract: NGA-589 AGB3303 ww39
Text: Quick Reference Guide Using the AGB3303 as a Replacement for the NGA-589 The AGB3303 InGaP HBT Gain Block from ANADIGICS is a wideband device with high linearity, low noise and low distortion that can be used as a replacement for the NGA-589 device from Sirenza Microdevices. Both
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AGB3303
NGA-589
NGA-589
OT-89
GA-589
W88W
ww39
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Untitled
Abstract: No abstract text available
Text: Preliminary Preliminary Product Description NGA-589 Stanford Microdevices’ NGA-589 is a high performance Gallium Arsenide Hetrojunction Bipolar Transistor MMIC Amplifier. Designed with InGaP process technology for improved reliability, a Darlington configuration is utilized for
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NGA-589
38dBm
100mW
100mA
550mW
200mW
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marking N5 mmic
Abstract: NGA589
Text: NGA-589 Product Description DC-5.5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices NGA-589 is a high performance InGaP/ GaAs HBT MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance
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NGA-589
NGA589
EDS-100376
marking N5 mmic
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10 GHz wideband mixer
Abstract: HMC676LP3E
Text: g ra tin Ye ar s 25 Ce leb Inn ov ce vi y lit ion Qua at Product Selection Guide Analog, Digital & Mixed -Signal ICs, Modules, Subsystems & Instrumentation, DC - 110 GHz Automotive Telematics & Sensors Broadband Cable Modem, CATV, DBS & VoIP WiMAX, WiBro, WLAN & UWB
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OC-48
10 GHz wideband mixer
HMC676LP3E
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Untitled
Abstract: No abstract text available
Text: ANALOG & MIXED -SIGNAL ICS, MODULES, SUBSYSTEMS & INSTRUMENTATION, DC - 110 GHZ AUTOMOTIVE Telematics & Sensors BROADBAND Cable Modem, CATV, DBS & VoIP Fixed Wireless, WiMAX & WiBro UWB & WirelessLAN CELLULAR INFRASTRUCTURE GSM, GPRS, CDMA, TD-SCDMA, WCDMA, UMTS & 4G / LTE
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OC-48
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marking N5 mmic
Abstract: marking n5 amplifier NGA-589 marking n5 amplifier 6.0 GHZ mmic n5
Text: NGA-589 Product Description DC-5.5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices NGA-589 is a high performance InGaP/ GaAs HBT MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance
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NGA-589
NGA-589
NGA589
EDS-100376
marking N5 mmic
marking n5 amplifier
marking n5 amplifier 6.0 GHZ
mmic n5
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g65m
Abstract: 175C NGA-589 SCA-4 NGA589
Text: Product Description Stanford Microdevices SCA-4 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 4 GHz. The heterojunction increases breakdown voltage
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NGA-589
EDS-101394
g65m
175C
SCA-4
NGA589
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175C
Abstract: NGA-589 SCA-14 SCA-4
Text: Product Description Stanford Microdevices SCA-14 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 4 GHz. The heterojunction increases breakdown voltage
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SCA-14
SCA-14
NGA-589
EDS-101395
175C
SCA-4
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LE-12T
Abstract: marking N5 mmic marking n5 amplifier
Text: NGA-589 Product Description DC-5.5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier High Gain : 19.2 dB at 1950 MHz Operates From Single Supply Low Thermal Resistance Package T -20 Applications LE T ORL -30 6 PA Driver Amplifier Cellular, PCS, GSM, UMTS
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NGA-589
NGA589
EDS-100376
LE-12T
marking N5 mmic
marking n5 amplifier
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38dBm
Abstract: No abstract text available
Text: Preliminary Preliminary Product Description NGA-589 Stanford Microdevices’ NGA-589 is a high performance Gallium Arsenide Hetrojunction Bipolar Transistor MMIC Amplifier. Designed with InGaP process technology for improved reliability, a Darlington configuration is utilized for
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NGA-589
38dBm
100mW
31mil
EDS-100376
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SCA-14
Abstract: 175C NGA-589 sca14
Text: Preliminary Preliminary SCA-14 Product Description Sirenza Microdevices SCA-14 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 4 GHz. The heterojunction increases breakdown voltage
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SCA-14
SCA-14
EDS-101395
175C
NGA-589
sca14
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175C
Abstract: NGA-589
Text: Preliminary Preliminary SCA-4 Product Description Sirenza Microdevices SCA-4 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 4 GHz. The heterojunction increases breakdown voltage
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EDS-101394
175C
NGA-589
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FMCW Radar
Abstract: 4G lte chip modem HMC852LC3C 13600D HMC-C083 4G lte chip modem usb HMC363G8 MAV-11SM EAR99 HMC788LP2E
Text: g ra tin Ye ar s 25 Ce leb Inn ov ce vi y lit ion Qua at Product Selection Guide Analog, Digital & Mixed -Signal ICs, Modules, Subsystems & Instrumentation, DC - 110 GHz Automotive Telematics & Sensors Broadband Cable Modem, CATV, DBS & VoIP WiMAX, WiBro, WLAN & UWB
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OC-48
FMCW Radar
4G lte chip modem
HMC852LC3C
13600D
HMC-C083
4G lte chip modem usb
HMC363G8
MAV-11SM
EAR99
HMC788LP2E
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Untitled
Abstract: No abstract text available
Text: Product Description NGA-589 Stanford M icrodevices’ NGA-589 is a high performance Gallium Arsenide Hetrojunction Bipolar T ransistor MMIC Amplifier. Designed with InGaP process technology for im proved reliability, a Darlington configuration is utilized for
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NGA-589
NGA-589
38dBm
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