HA17431VP
Abstract: HA17431PA HA17431PNA HA17431V HA17L431 HA17L431LP HA17L431P HA17L431UP HA17L432UP hitachi Zener Diode marking code
Text: HA17L431 Series High-Precision Variable Shunt Regulators ADE-204-029B Z 3rd Edition Apr. 1999 Description The HA17L431LP(MPAK-5) / P(TO-92) / UP(UPAK) are temperature-compensated variable shunt regulators. These ICs can operate at about half voltage in comparison with HA17431V series. They can be
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HA17L431
ADE-204-029B
HA17L431LP
HA17431V
HA17431VP
HA17431PA
HA17431PNA
HA17L431P
HA17L431UP
HA17L432UP
hitachi Zener Diode marking code
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HA17L431ALP
Abstract: HA17431VP hitachi mpak year code HA17431PA marking code 4e HA17431V HA17L431 HA17L431A Hitachi DSA00163 HA17L431LP
Text: HA17L431/HA17L431A Series High-Precision Variable Shunt Regulators ADE-204-029C Z 4th Edition Aug. 2000 Description The HA17L431LP(MPAK-5) / P(TO-92) / UP(UPAK) and the HA17L431ALP(MPAK-5) / AP(TO-92) are temperature-compensated variable shunt regulators. These ICs can operate at about half voltage in
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HA17L431/HA17L431A
ADE-204-029C
HA17L431LP
HA17L431ALP
HA17431V
HA17431VP
hitachi mpak year code
HA17431PA
marking code 4e
HA17L431
HA17L431A
Hitachi DSA00163
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marking ALP
Abstract: HA17431PA marking code 253 marking code 4e marking code SG transistors zener marking hitachi HA17431V HA17L431 HA17L431A HA17L431ALP
Text: HA17L431/HA17L431A Series High-Precision Variable Shunt Regulators ADE-204-029D Z Rev.4 Dec. 2000 Description The HA17L431LP(MPAK-5) / P(TO-92) / UP(UPAK) and the HA17L431ALP(MPAK-5) / AP(TO-92) are temperature-compensated variable shunt regulators. These ICs can operate at about half voltage in
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HA17L431/HA17L431A
ADE-204-029D
HA17L431LP
HA17L431ALP
HA17431V
marking ALP
HA17431PA
marking code 253
marking code 4e
marking code SG transistors
zener marking hitachi
HA17L431
HA17L431A
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RQJ0304DQDQSTL-E
Abstract: RQJ0304DQDQS
Text: RQJ0304DQDQS Silicon P Channel MOS FET Power Switching REJ03G1778-0100 Rev.1.00 Mar 16, 2009 Features • Low gate drive VDSS : –30 V and 2.5 V gate drive • Low drive current • High speed switching • Small traditional Power package UPAK Outline RENESAS package code: PLZZ0004CA-A
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RQJ0304DQDQS
REJ03G1778-0100
PLZZ0004CA-A
RQJ0304DQDQSTL-E
RQJ0304DQDQS
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RQJ0306FQDQS
Abstract: RQJ0306FQDQSTL-E
Text: RQJ0306FQDQS Silicon P Channel MOS FET Power Switching REJ03G1780-0100 Rev.1.00 Mar 16, 2009 Features • Low gate drive VDSS : –30 V and 2.5 V gate drive • Low drive current • High speed switching • Small traditional power package UPAK Outline RENESAS package code: PLZZ0004CA-A
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RQJ0306FQDQS
REJ03G1780-0100
PLZZ0004CA-A
RQJ0306FQDQS
RQJ0306FQDQSTL-E
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RQJ0305EQDQS
Abstract: RQJ0305EQDQSTL-E
Text: RQJ0305EQDQS Silicon P Channel MOS FET Power Switching REJ03G1779-0100 Rev.1.00 Mar 16, 2009 Features • Low gate drive VDSS : –30 V and 2.5 V gate drive • Low drive current • High speed switching • Small traditional power package UPAK Outline RENESAS package code: PLZZ0004CA-A
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RQJ0305EQDQS
REJ03G1779-0100
PLZZ0004CA-A
RQJ0305EQDQS
RQJ0305EQDQSTL-E
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RQK1001GQDQS
Abstract: RQK1001GQDQSTL-E RQK-10
Text: RQK1001GQDQS Silicon N Channel MOS FET Power Switching REJ03G1729-0100 Rev.1.00 Aug 19, 2008 Features • Medium drain to source voltage and Low gate drive VDSS : 100 V and 4 V gate drive • Low drive current • High speed switching • Small traditional package UPAK
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RQK1001GQDQS
REJ03G1729-0100
PLZZ0004CA-A
RQK1001GQDQS
RQK1001GQDQSTL-E
RQK-10
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2SJ317
Abstract: No abstract text available
Text: 2SJ317 Silicon P Channel MOSFET Application UPAK High speed power switching Low voltage operation 32 1 Features 4 • Very low on–resistance • High speed switching • Suitable for camera or VTR motor drive circuit, power switch, solenoid drive and etc.
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2SJ317
2SJ317
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2SJ244
Abstract: No abstract text available
Text: 2SJ244 Silicon P Channel MOS FET DIII-L Application UPAK High speed power switching Low voltage operation 3 1 2 Features 4 • Very low on–resistance • High speed switching • Suitable for camera or VTR motor drive circuit, power switch, solenoid drive and etc.
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2SJ244
2SJ244
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2SK2315
Abstract: No abstract text available
Text: 2SK2315 Silicon N Channel MOS FET Application UPAK High speed power switching Features 3 Low on–resistance High speed switching Low drive current 2.5 V gate drive device - - - can be driven from 3 V source. • Suitable for DC – DC converter, motor drive,
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2SK2315
2SK2315
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2SJ278
Abstract: No abstract text available
Text: 2SJ278 Silicon P Channel MOS FET Application UPAK High speed power switching 1 32 Features • • • • Low on–resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC – DC
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2SJ278
2SJ278
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2SK1772
Abstract: No abstract text available
Text: 2SK1772 Silicon N Channel MOS FET Application UPAK High speed power switching Features 3 Low on–resistance High speed switching Low drive current 4 V gate drive device - - - can be driven from 5 V source. • Suitable for DC – DC converter, motor drive,
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2SK1772
2SK1772
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Untitled
Abstract: No abstract text available
Text: 2SJ361 Silicon P-Channel MOS FET Application UPAK High speed power switching 1 Features • • • • 3 Low on–resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source 2 4 2, 4 1. Gate 2. Drain 3. Source 4. Drain
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2SJ361
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td 6950
Abstract: 2SJ361
Text: 2SJ361 Silicon P-Channel MOS FET Application UPAK High speed power switching 1 Features • • • • 3 Low on–resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source 2 4 2, 4 1. Gate 2. Drain 3. Source 4. Drain
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2SJ361
td 6950
2SJ361
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Hitachi DSA002749
Abstract: No abstract text available
Text: 2SK1334 Silicon N-Channel MOS FET Nov. 1 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary Breakdown Suitable for switching regulator and DC-DC converter Outline UPAK
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2SK1334
D-85622
Hitachi DSA002749
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Hitachi DSA002779
Abstract: No abstract text available
Text: 2SK1334 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary Breakdown Suitable for switching regulator and DC-DC converter Outline UPAK 3 2 1 4
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2SK1334
D-85622
Hitachi DSA002779
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Hitachi DSA002713
Abstract: No abstract text available
Text: 2SJ361 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source Outline UPAK 3 2 1 4 D 1. Gate 2. Drain
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2SJ361
Hitachi DSA002713
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2SJ317
Abstract: Hitachi 2SJ Hitachi DSA00395
Text: 2SJ317 Silicon P-Channel MOS FET Application High speed power switching Low voltage operation Features • Very low on-resistance • High speed switching • Suitable for camera or VTR motor drive circuit, power switch, solenoid drive and etc. Outline UPAK
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2SJ317
2SJ317
Hitachi 2SJ
Hitachi DSA00395
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2SJ186
Abstract: DSA003733 Hitachi 2SJ
Text: 2SJ186 Silicon P-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline UPAK 3 2 1 4 D 1. Gate
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2SJ186
2SJ186
DSA003733
Hitachi 2SJ
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Hitachi 2SJ
Abstract: No abstract text available
Text: 2SJ244 - Silicon P Channel MOS FET Application UPAK High speed power switching Low voltage operation 1 Features • Very low on-resistance • High speed switching • Suitable for camera or VTR motor drive circuit, power switch, solenoid drive and etc.
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2SJ244
Hitachi 2SJ
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Untitled
Abstract: No abstract text available
Text: 2SK1334 Silicon N-Channel MOS FET HITACHI Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current N o secondary Breakdown Suitable for switching regulator and DC-DC converter Outline UPAK
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2SK1334
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Untitled
Abstract: No abstract text available
Text: 2SJ361 Silicon P-Channel MOS FET HITACHI Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source Outline UPAK 1. 2. 3. 4. Gate Drain Source
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2SJ361
2SJ361
5x20x0
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J361 IC
Abstract: No abstract text available
Text: 2SJ361 Silicon P-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 2.5 V gate drive device can be driven from 3 V source Outline UPAK 2 U ^ ?D G o—h-rwJ
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2SJ361
J361 IC
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Untitled
Abstract: No abstract text available
Text: HA17L431 Series High-Precision Variable Shunt Regulators HITACHI ADE-204-029A Z 2nd Edition Sept. 1, 1998 Description The HA17L431LP(MPAK-5) / P(TO-92) are temperature-compensated variable shunt regulators. These ICs can operate at about half voltage in comparison with HA17431V series. They can be replaced for
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OCR Scan
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HA17L431
ADE-204-029A
HA17L431LP
HA17431V
HA17431
HA17431VLP
HA17L431LP
HA17431FPA
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