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    2SJ278 Search Results

    2SJ278 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    2SJ278MYTR-E Renesas Electronics Corporation Pch Single Power Mosfet -60V -1A 830Mohm Upak/Sc-62 Visit Renesas Electronics Corporation
    2SJ278MYTL-E Renesas Electronics Corporation Pch Single Power Mosfet -60V -1A 830Mohm Upak/Sc-62 Visit Renesas Electronics Corporation
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    2SJ278 Price and Stock

    Renesas Electronics Corporation 2SJ278MYTR

    2SJ278 - Power Field-Effect Transistor, 1A, 60V, P-Channel MOSFET '
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    Rochester Electronics 2SJ278MYTR 227 1
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    Hitachi Ltd 2SJ278MYTR

    GENERAL SWITCHING POWER MOS FET Power Field-Effect Transistor, 1A I(D), 60V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
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    ComSIT USA 2SJ278MYTR 10,000
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    Chip 1 Exchange 2SJ278MYTR 500
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    Renesas Electronics Corporation 2SJ278MYTL

    P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: SINGLE; Qualification: Not Qualified; Maximum Drain Current (ID): 1 A;
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    Vyrian 2SJ278MYTL 202
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    Renesas Electronics Corporation 2SJ278MYTR-E

    Silicon P Channel MOS FET / Trans MOSFET P-CH Si 60V 1A 4-Pin(3+Tab) UPAK T/R
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    Win Source Electronics 2SJ278MYTR-E 1,812
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    2SJ278 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SJ278 Hitachi Semiconductor Silicon P-Channel MOS FET Original PDF
    2SJ278 Hitachi Semiconductor Silicon P-Channel MOS FET Original PDF
    2SJ278 Hitachi Semiconductor Mosfet Guide Original PDF
    2SJ278 Hitachi Semiconductor Silicon P Channel MOS FET Original PDF
    2SJ278 Renesas Technology Silicon P Channel MOS FET Original PDF
    2SJ278 Renesas Technology Silicon P-Channel MOS FET Original PDF
    2SJ278 Hitachi Semiconductor Power Transistors Data Book Scan PDF
    2SJ278 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SJ278 Unknown FET Data Book Scan PDF
    2SJ278 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SJ278 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SJ278 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SJ278 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SJ278MYTL-E Renesas Technology Silicon P Channel MOS FET Original PDF
    2SJ278MYTR-E Renesas Technology Silicon P Channel MOS FET Original PDF

    2SJ278 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SJ278

    Abstract: Hitachi DSA00389
    Text: 2SJ278 Silicon P-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter


    Original
    2SJ278 2SJ278 Hitachi DSA00389 PDF

    2SJ278

    Abstract: Hitachi 2SJ DSA003638
    Text: 2SJ278 Silicon P-Channel MOS FET ADE-208-1190 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter


    Original
    2SJ278 ADE-208-1190 2SJ278 Hitachi 2SJ DSA003638 PDF

    Hitachi 2SJ

    Abstract: Hitachi DSA002779
    Text: 2SJ278 Silicon P-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter


    Original
    2SJ278 Hitachi 2SJ Hitachi DSA002779 PDF

    2SJ278

    Abstract: No abstract text available
    Text: 2SJ278 Silicon P Channel MOS FET Application UPAK High speed power switching 1 32 Features • • • • Low on–resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC – DC


    Original
    2SJ278 2SJ278 PDF

    2SJ278

    Abstract: 2SJ278MYTL-E 2SJ278MYTR-E
    Text: 2SJ278 Silicon P Channel MOS FET REJ03G0856-0200 Previous: ADE-208-1190 Rev.2.00 Sep 07, 2005 Description High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source


    Original
    2SJ278 REJ03G0856-0200 ADE-208-1190) PLZZ0004CA-A 2SJ278 2SJ278MYTL-E 2SJ278MYTR-E PDF

    2SK3235

    Abstract: 2SK3379 Hitachi DSA00276 HAT1040T 2SJ517 2SK1835 TO220CFM 2SK3421 HAT1053
    Text: HAT2038R/HAT2038RJ Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-666C Z 4th. Edition Feb. 1999 Features • • • • For Automotive Application ( at Type Code “J “) Low on-resistance Capable of 4 V gate drive High density mounting


    Original
    HAT2038R/HAT2038RJ ADE-208-666C HAT2038R HAT2038RJ pdf\7420e HAT1044M HAT1053M 2SK3235 2SK3379 Hitachi DSA00276 HAT1040T 2SJ517 2SK1835 TO220CFM 2SK3421 HAT1053 PDF

    lt 6229

    Abstract: Yamaha AX 496 pin diagram of lt 542 YTD410 YM7405 YTD418 YTD423 YTD428 TRTEPC9.8 YAMAHA RA 200
    Text: YTD428 APPLICATION MANUAL IDSU ISDN DSU for Terminal Equipment YTD428 APPLICATION MANUAL CATALOG No.: LSI-6TD428A3 2002.12 IMPORTANT NOTICE 1. Yamaha reserves the right to make changes to its Products and to this document without notice. The information contained in this document has been carefully checked


    Original
    YTD428 YTD428 LSI-6TD428A3 YTD418 YTD423 KP15N14 lt 6229 Yamaha AX 496 pin diagram of lt 542 YTD410 YM7405 YTD423 TRTEPC9.8 YAMAHA RA 200 PDF

    2sk 4207

    Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
    Text: CONTENTS Index . 5 General Information . 9


    Original
    D-85622 2sk 4207 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent PDF

    7054F

    Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
    Text: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver


    Original
    2sc4537 2sc454. 2sc4591 2sc4592 2sc4593 2sc460. 2sc4628 2sc4629 2sc4643 2sc4680 7054F BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557 PDF

    Yamaha YTD

    Abstract: NL322522T-3R3J YTD426B YTD427
    Text: YTD427 APPLICATION MANUAL IAFE ISDN DSU Analog Front End YTD427 APPLICATION MANUAL CATALOG No. : LSI-6TD427A2 1997.12 b  IMPORTANT NOTICE 1. Yamaha reserves the right to make changes to its Products and to this document without notice. The information contained in this document has been carefully checked and


    Original
    YTD427 YTD427 LSI-6TD427A2 0047u 0022u TESTIN12 TESTIN19 8-0319C KP4N12 VRYA15 Yamaha YTD NL322522T-3R3J YTD426B PDF

    2SJ278

    Abstract: Hitachi 2SJ
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SJ278 Silicon P C h a n n e l M O S F E T Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC —DC


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    2SJ278 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SJ278 Silicon P-Channel MOS FET H ITA C H I November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter


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    2SJ278 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SJ278 Silicon P-Channel MOS FET HITACHI Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter


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    2SJ278 5x20x0 PDF

    2sk1299

    Abstract: 2SK513 2SK1202 2SK1231 2SK1665 2SK684 2SK740 2SK1151 2SK1152 2SK1153
    Text: HITACHI 31 Power MOSFET for Switching Power Supply I _ Commendation products Input i/ass« nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be


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    0-30W 0-50W 0-100W 00-200W 2SK579 2SK580 2SK1151 2SK1152 2SK1153 2SK1154 2sk1299 2SK513 2SK1202 2SK1231 2SK1665 2SK684 2SK740 PDF

    ac Inverter schematics 10 kw

    Abstract: 200v dc motor igbt MBN300A6 UPS schematics inverter circuit schematics 2SJ279 2SK1762 ac Inverter 10 kw GN12015C GN12030E
    Text: HITACHI 2.2 Product Matrix : Discretes Modules 19 The full Hitachi IGBT line up is carefully designed to meet a wide range of user needs. There are future plans for a further expansion of this line up. Table 15 : Total IGBT Product Range Ratings DISCRETES


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    GN4530C GN6010A GN6015A GN6020C GN6030C GN6050E GN6075E GN9060E GN12015C GN12030E ac Inverter schematics 10 kw 200v dc motor igbt MBN300A6 UPS schematics inverter circuit schematics 2SJ279 2SK1762 ac Inverter 10 kw GN12015C PDF

    2SK1778

    Abstract: 2SK109 2SJ236 2SK1919 2SJ175 2SJ176 2SJ182 2SJ237 2SK1093 2SK1094
    Text: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.


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    high-sp03 2SK1665 2SJ215 2SJ217 2SK1303 2SK1304 2SK1298 2SK1666 2SJ216 2SJ218 2SK1778 2SK109 2SJ236 2SK1919 2SJ175 2SJ176 2SJ182 2SJ237 2SK1093 2SK1094 PDF

    2SK44

    Abstract: 2SJ182 2SJ214 2SK513 2SK1151 2SK1152 2SK1153 2SK579 2SK580 2SJ235
    Text: 31 HITACHI Power MOSFET for Switching Power Supply I _ Commendation products Input i/ass« nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be


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    0-30W 0-50W 0-100W 00-200W 2SK579 2SK580 2SK1151 2SK1152 2SK1153 2SK1154 2SK44 2SJ182 2SJ214 2SK513 2SJ235 PDF

    2SK1778

    Abstract: 2SJ177 2SJ295 KWSA103 PF0030 PF0040 PF0042
    Text: HITACHI 29 5.4 Communications Mobile RF SAW Filters KTACS KAMT« N M T/G SM Tb Bx Tu ft * T» 9m , hvm U m Typ IC - 4ädB Wide band aaaaMtkw •OStfBqrp SMD pàg - 4.5 s 5 J s 2mm 505L fan p riiw HWSAHB HWSB102 HWSAXB H W SBXa H W SA 03 H W SM » O m« Q m


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    303L/3Â KWSA103 HWSA10I HWSB10I HWSA01 PF0030 PP0031 PF0040 PP004I 2SK1778 2SJ177 2SJ295 PF0042 PDF

    2SK1778

    Abstract: 2sk1299 4AM12 transistor 2sk1304 2sj177 4AK22 2SK1919 2SK971 transistor 2sk 2SK972
    Text: HITACHI 14 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching


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    10-pin 12-pin 4AK17 2SK972 4AK15 2SK971 2SK1665 2SJ215 2SJ217 2SK1303 2SK1778 2sk1299 4AM12 transistor 2sk1304 2sj177 4AK22 2SK1919 2SK971 transistor 2sk 2SK972 PDF

    APC UPS es 500 CIRCUIT DIAGRAM

    Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
    Text: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.


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    ADE-408 50502C APC UPS es 500 CIRCUIT DIAGRAM sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212 PDF

    2SK1778

    Abstract: 2SK1776 2SK1665 2SK1094 2SJ236 2SK430 2SK1151 2SK1152 2SJ175 2SK579
    Text: HITACHI 31 Power MOSFET for Switching Power Supply I _ i/ass« nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be isolated from each other. Hitachi's range of devices offers these


    OCR Scan
    0-30W 0-50W 0-100W 00-200W 2SK579 2SK580 2SK1151 2SK1152 2SK1153 2SK1154 2SK1778 2SK1776 2SK1665 2SK1094 2SJ236 2SK430 2SJ175 PDF

    2sk1299

    Abstract: PF0042 2SJ295 2SJ299 2SK1919 PF0040 KWSA103 PF0030 Hitachi Scans-001
    Text: 29 HITACHI 5.4 Communications Mobile RF SAW Filters NMT/GSM KTACS HITACHI KAMT« Tb Bx Tu ft* T» 9m, hvm U m Typ IC - 4ädB Wide band aaaaMtkw •OStfBqrp SMD pàg - 4.5 s 5 J s 2mm 505L fan p riiw HWSAHB HWSB102 HWSAXB HWSBXa HW SA03 H W SM » O m« Q m


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    303L/3Â KWSA103 HWSA10I HWSB10I HWSA01 PF0030 PP0031 PF0040 PP004I 2sk1299 PF0042 2SJ295 2SJ299 2SK1919 Hitachi Scans-001 PDF

    2SK1778

    Abstract: 2SJ236 2SK1776 2SJ299 2SJ175 2SJ176 2SJ182 2SJ237 2SK1093 2SK1094
    Text: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.


    OCR Scan
    high-sp03 2SK1665 2SJ215 2SJ217 2SK1303 2SK1304 2SK1298 2SK1666 2SJ216 2SJ218 2SK1778 2SJ236 2SK1776 2SJ299 2SJ175 2SJ176 2SJ182 2SJ237 2SK1093 2SK1094 PDF