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    MARKING NW Search Results

    MARKING NW Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    MARKING NW Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KRC231S

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KRC231S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking NW No. 1 Item Marking Device Mark NW KRC231S hFE Grade - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method


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    PDF KRC231S OT-23 KRC231S

    B12 GDM

    Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
    Text: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL


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    PDF GP15M 0621X SB340 DO-204AC/ DO-204AL DO-201AD/ P600/MPG06 MPG06 VTS40100CT B12 GDM BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a

    GENERAL SEMICONDUCTOR MARKING mJ SMA ED

    Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
    Text: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)


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    PDF GP15M 1N4005 1N4005/Logo DO-204AC 24-Jun-04 DO-204AL GENERAL SEMICONDUCTOR MARKING mJ SMA ED kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A

    USB Device Testing and Marking

    Abstract: FT245R FT2232H
    Text: Future Technology Devices International Ltd. Technical Note TN_114 USB Device Testing and Marking Document Reference No.: FT_000181 Version 1.0 Issue Date: 2009-28-10 A major contributing factor in the success of USB as a peripheral interface has been the close adherence


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    5800c

    Abstract: bios programmer block diagram of crusoe processor TM5500-800 chip morphing TM5800 feature sdr sdram pcb layout TM5800 TM5800-733 TM5800-800
    Text: TM5500/TM5800 Version 1.0 Data Book Crusoe Processors Described in this Document Processor SKU Memory Interface Package Marking L2 Cache Max Core Core Frequency Voltage Tj Max TDP DDR SDR TM5800-933 CoolRun80 DDR/SDR 5800C093310 512 KBytes 933 MHz 0.90-1.35 V


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    PDF TM5500/TM5800 TM5800-933 CoolRun80 5800C093310 TM5800-867 5800C086710 TM5800-800 5800A080010 TM5500-800 5800c bios programmer block diagram of crusoe processor TM5500-800 chip morphing TM5800 feature sdr sdram pcb layout TM5800 TM5800-733 TM5800-800

    bios programmer

    Abstract: sdr sdram pcb layout TM5800-1000-LP processor cross reference cdq42 5800P100021 5800R100021 TM5500 TM5800 16M X 32 SDR SDRAM
    Text: TM5800 Version 2.1 Data Book Crusoe Processors Described in this Document Processor Memory Package Marking L2 Cache Max Core Frequency Core Voltage TM5800-1000-ULP CoolRun80 DDR/SDR 5800T100021 512 KBytes 1000 MHz TM5800-1000-VLP CoolRun80 DDR/SDR Tj Max TDP


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    PDF TM5800 TM5800-1000-ULP CoolRun80 5800T100021 TM5800-1000-VLP 5800N100021 TM5800-1000-LP 5800P100021 bios programmer sdr sdram pcb layout TM5800-1000-LP processor cross reference cdq42 5800R100021 TM5500 TM5800 16M X 32 SDR SDRAM

    murata SAW

    Abstract: No abstract text available
    Text: SAW FILTER FOR JCDMA Tx Murata part number : SAWEN827MAA0F00 fc=827MHz Package Dimensions Specification Item 1.80±0.05 Specif ication -25 to 85°C Dot Marking(φ0.3) N W 1.35±0.05 Nominal Center Frequency(f c) Insertion Loss (824 to 830MHz) 827MHz 3.0dB max.


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    PDF SAWEN827MAA0F00 827MHz) 827MHz 830MHz) murata SAW

    block diagram of crusoe processor

    Abstract: bios programmer SDR100 TM5800 TM58EL-800 crusoe "sdr sdram" design guideline TM58E SDR100 sdram dimm TM55EL-667
    Text: Crusoe SE TM55E/TM58E Version 2.1 Data Book Crusoe SE Embedded Processors Described in this Document Processor SKU Memory Package Marking L2 Cache Max Core Core Frequency Voltage Temp Range TDP DDR SDR TM58EX-933 100°C DDR/SDR 58EXAE093321 512 KBytes 933 MHz


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    PDF TM55E/TM58E TM58EX-933 58EXAE093321 TM58EL-800 58ELAD080021 TM55EL-667 55ELAC066721 TM55E/TM58E block diagram of crusoe processor bios programmer SDR100 TM5800 TM58EL-800 crusoe "sdr sdram" design guideline TM58E SDR100 sdram dimm TM55EL-667

    murata SAW

    Abstract: No abstract text available
    Text: SAW FILTER FOR CDMA2000 BC0 SC2/BC3 Tx Murata part number : SAWEN827MAA0F00 fc=827MHz Package Dimensions Specification Item 1.80±0.05 Specification -30 to 85°C 25±2°C typ. (9) (8) (7) (6) (10) N W (5) Dot Marking(0.3) 1.35±0.05 Nominal Center Frequency(fc)


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    PDF CDMA2000 SAWEN827MAA0F00 827MHz) 827MHz 830MHz) murata SAW

    AT91M40400

    Abstract: No abstract text available
    Text: Errata Sheet V3.2 This errata sheet refers to devices with the following marking: AT91M40400 25AC, 25AI or 33AC Internal product reference 55568A • I/O Pads are not 5V Tolerant • One Half-cycle NUB on First Access to a Chip Select Bank • EBI Abort Generation


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    PDF AT91M40400 5568A 16-bit 04/00/0M AT91M40400

    monochrome cmos IMAGE SENSOR 2005

    Abstract: fq-cr15050f
    Text: CODE READER FQ-CR SERIES Exceptional Reading Performance with Easy Operation Multi Code Reader FQ-CR1 Series 2D Code Reader for Direct Part Marking codes FQ-CR2 Series » Read from everything from paper and labels to metal, PCBs, and glass for a wide range of applications.


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    PDF 2356-81-300/Fax: 6835-3011/Fax: 847-843-7900/Fax: 21-5037-2222/Fax: Q186-E1-01 monochrome cmos IMAGE SENSOR 2005 fq-cr15050f

    FQ-WD002

    Abstract: FQ-WN002 fq-cr15050f FQ-D31 W4S1-05B FQ-CR25050F-M FQ-WD020 FQ-CR15100N PDF417 sd ram reader
    Text: CODE READER FQ-CR SERIES Exceptional Reading Performance with Easy Operation Multi Code Reader FQ-CR1 Series 2D Code Reader for Direct Part Marking codes FQ-CR2 Series » Read from everything from paper and labels to metal, PCBs, and glass for a wide range of applications.


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    PDF 2356-81-300/Fax: 847-843-7900/Fax: 6835-3011/Fax: 21-5037-2222/Fax: Q186-E1-01 FQ-WD002 FQ-WN002 fq-cr15050f FQ-D31 W4S1-05B FQ-CR25050F-M FQ-WD020 FQ-CR15100N PDF417 sd ram reader

    IMO TDMA

    Abstract: star delta plc IMO TDra imo TDMB imo nexus 5 plc IMO Timer 5A250VAC "cyclic timer" 24v electronic flasher with relay 230v aC PLC
    Text: DIN Timers TD 22.5mm DIN rail mounting Electronic Timers • AC/DC coil operation ■ Multi-time range ■ Multi-function, On-delay, Off-delay and Star/Delta versions ■ Voltage range selectable ■ Marking plate cover Options and ordering codes TD MA DIN rail mount timers


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    PDF 24VAC/DC 100230VAC 110VAC 24VAC/DC 230VAC IMO TDMA star delta plc IMO TDra imo TDMB imo nexus 5 plc IMO Timer 5A250VAC "cyclic timer" 24v electronic flasher with relay 230v aC PLC

    MT42L32M32D2

    Abstract: micron lpddr2 LPDDR2 SDRAM LPDDR2 SDRAM micron MT42L32M32
    Text: Preliminary‡ 512Mb Automotive Mobile LPDDR2 SDRAM Features Automotive Mobile LPDDR2 SDRAM MT42L32M16D1, MT42L32M32D2, MT42L16M32D1 Features Options Marking • VDD2: 1.2V • Configuration – 4 Meg x 32 x 4 banks – 8 Meg x 16 x 4 banks – 2 x 8 Meg x 16 x 4 banks


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    PDF 512Mb MT42L32M16D1, MT42L32M32D2, MT42L16M32D1 09005aef84d56533 MT42L32M32D2 micron lpddr2 LPDDR2 SDRAM LPDDR2 SDRAM micron MT42L32M32

    SMBJ8.5CA

    Abstract: SMBJ15A SMBJ11CA SMBJ130A SMBJ170A SMBJ130CA SMBJ17A SMBJ14CA SMBJ58A SMBJ100A
    Text: 上海晨启半导体有限公司 SHANGHAI SEMITECH SEMICONDUCTOR CO., LTD • 600 Watt Peak Power ■ Dimension Dim SMB DO-214AA ■ Specification Type Number (Uni) (Bi) Marking Millimeters Inches Min Max Min Max A 4.06 4.57 0.160 0.180 B 3.30 3.94 0.130


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    PDF DO-214AA) SMBJ300A SMBJ300CA SMBJ350 SMBJ350C SMBJ350A SMBJ350CA SMBJ400 SMBJ400C SMBJ400A SMBJ8.5CA SMBJ15A SMBJ11CA SMBJ130A SMBJ170A SMBJ130CA SMBJ17A SMBJ14CA SMBJ58A SMBJ100A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary‡ 512Mb Automotive Mobile LPDDR2 SDRAM Features Automotive Mobile LPDDR2 SDRAM MT42L32M16D1, MT42L32M32D2 Features Options Marking • VDD2: 1.2V • Configuration – 8 Meg x 16 x 4 banks – 2 x 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package


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    PDF 512Mb MT42L32M16D1, MT42L32M32D2 121-ball 134-ball 09005aef84d56533

    germanium photodiode PIN

    Abstract: pin photodiode 1550 sensitivity photodiode PIN 1300 sensitivity pin Photodiode 1300 nm Germanium power t2856
    Text: SIEMENS SFH 232 GERMANIUM PIN PHOTODIODE FEATURES Maximum Ratings * Anode Marking: Tab at Package Bottom Operating and Storage Temperature Range T0P, Tstg .-40" to +80“C Reverse Voltage (VR) .15V


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    MARKING aep

    Abstract: No abstract text available
    Text: ' t y y ÿ ' f # —K : Outline Drawings SCHOTTKY BARRIER DIODE • 4 # f i ’ Features • l&Vc Lo w V f ■ : Super high speed sw itchin g. »aft 1 J» >1 ■K 1 ? High reliability by planer design. • Marking 9 oi 3 W :ft5m m b'7f S KM A «TBI WiH^nW


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    PDF I95t/R89) Shl50 MARKING aep

    marking BSs sot23

    Abstract: marking DKs marking BSs sot23 siemens
    Text: SIEMENS PNP Silicon AF and Switching Transistors • • • • BCX42 BSS 63 For general AF applications High breakdown voltage Low collector-emitter saturation voltage Complementary types: BCX 41, BSS 64 NPN Type Marking Ordering Code (tape and reel) Pin Configuration


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    PDF BCX42 Q62702-C1485 Q62702-S534 OT-23 42/aSS BSS63 marking BSs sot23 marking DKs marking BSs sot23 siemens

    relais STPI 327

    Abstract: relais STPI relais STPI 336 relais STPI 316 relays STPI 310 relays STPI 325
    Text: SOCLES A SOUDER POUR FILS ET C.I. SOLDERING SOCKETS FOR WIRES AND PCB S310S S320S S316S S326S S336S CARACTERISTIQUES GENERALES / GENERAL DATA Visserie: Hardware: Montage: Mounting: Marquage: Marking: Isolant: Socket: Contacts: Contacts: en acier inoxydale non magnétique livrée avec le socle


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    PDF S310S S320S S316S S326S S336S relais STPI 327 relais STPI relais STPI 336 relais STPI 316 relays STPI 310 relays STPI 325

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 112 NPN Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit * Built in bias resistor R1=4.7ki2, R2=4.7k£2 Pin Configuration Q62702-C2254 1 =B Package II CO Ordering Code WFs O Marking BCR 112 LU II CNJ


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    PDF Q62702-C2254 OT-23 0535b05

    SMBJ20A

    Abstract: SMBJ8.5 A 15 SMBJ15A SMBJ130A SMBJ170A SMBJ17A SMBJ58A SMBJ100A SMBJ64A SMBJ6.5A
    Text: ELECTRICAL CHARACTERISTICS TA=25°C unless otherwise noted Device Device Marking Code Breakdown Voltage V(BR) (Volts) at It Min. Test Current @lT(mA) Stand-Off Voltage VWM(Volts) Maximun Reverse Leakage at Vwm Id ( u A ) Max. SMBJ5.0 6.40 10 KD 7.30 KE SMBJ5.0A


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    PDF SMBJ90A SMBJ100 SMBJ100A SMBJ110 SMBJ110A SMBJ120 SMBJ120A SMBJ130 SMBJ130A SMBJ150 SMBJ20A SMBJ8.5 A 15 SMBJ15A SMBJ170A SMBJ17A SMBJ58A SMBJ64A SMBJ6.5A

    A1807

    Abstract: pnp transistor 600V 2SA1807F5 transistor marking code NW transistors 2SA transistor 2SA 6 J transistor 2SA 600v PNP -600v
    Text: 2S A 1807F5 Transistor, PNP Features • available in CPT F5 SC-63 package • package marking: A1807-AQ, where ★ is hFE code and □ is lot number • high breakdown voltage, BVceo = ~600 V • low collector saturation voltage, typically VCE(sat) = -0.25 V for


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    PDF 2SA1807F5 SC-63) A1807 nw-60 pnp transistor 600V 2SA1807F5 transistor marking code NW transistors 2SA transistor 2SA 6 J transistor 2SA 600v PNP -600v

    DIODE a5

    Abstract: No abstract text available
    Text: ffl. BAV74 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE Dual diodes, common cathodes Marking PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm B A V 7 4 - A5 3.0 Pin configuration ~2 . 8_ 0.14 0.48 038 1 = ANODE 2 = ANODE 3 = CATHODE _L 3 0.70 0.50 § 1.4 2.6 1.2


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    PDF BAV74 DIODE a5