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    MARKING ON SEMICONDUCTOR 720 Search Results

    MARKING ON SEMICONDUCTOR 720 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DS0026H/883 Rochester Electronics LLC DS0026 - CLOCK DRIVER, MOS - Dual marked (7800802GA) Visit Rochester Electronics LLC Buy
    ICL7667MTV/883B Rochester Electronics LLC ICL7667 - DRIVER, MOSFET, DUAL POWER - Dual marked (5962-8766001GC) Visit Rochester Electronics LLC Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    MARKING ON SEMICONDUCTOR 720 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IC 723

    Abstract: 723 ic IC 1 723 uA 723 723DC mA 723 BF Marking pdf application of IC 723 Q62702-F1239 Q62702-F1309
    Text: PNP Silicon High-Voltage Transistors ● ● ● ● ● BF 721 BF 723 Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-emitter saturation voltage Low capacitance Complementary types: BF 720/722 NPN


    Original     		PDF Q62702-F1239 Q62702-F1309 OT-223 IC 723 723 ic IC 1 723 uA 723 723DC mA 723 BF Marking pdf application of IC 723 Q62702-F1239 Q62702-F1309

    BF marking code

    Abstract: MARKING CODE 720 720 marking marking 722 Q62702-F1238 Q62702-F1306 TS110
    Text: NPN Silicon High-Voltage Transistors ● ● ● ● ● BF 720 BF 722 Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-emitter saturation voltage Low capacitance Complementary types: BF 721/723 PNP


    Original     		PDF Q62702-F1238 Q62702-F1306 OT-223 BF marking code MARKING CODE 720 720 marking marking 722 Q62702-F1238 Q62702-F1306 TS110

    ir21015

    Abstract: 1N688 1N6882UTK4 1n6885 1N6884UTK4CS BT 342 project 1n6882 MIL PRF 19500 diode thermal profile
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 7 December 2005. MIL-PRF-19500/720A 7 September 2005 SUPERSEDING MIL-PRF-19500/720 28 October 2003 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY RECTIFIER,


    Original     		PDF MIL-PRF-19500/720A MIL-PRF-19500/720 1N6882UTK4, 1N6883UTK4, 1N6884UTK4, 1N6885UTK4, 1N6882UTK4CS, 1N6883UTK4CS, 1N6884UTK4CS, 1N6885UTK4CS, ir21015 1N688 1N6882UTK4 1n6885 1N6884UTK4CS BT 342 project 1n6882 MIL PRF 19500 diode thermal profile

    Untitled

    Abstract: No abstract text available
    Text: MIXA600AF650TSF tentative XPT IGBT Module VCES = 650 V I C25 = 2x 720 A VCE sat = 1.65 V Common emitter + free wheeling diodes Part number MIXA600AF650TSF Backside: isolated Features / Advantages: Applications: Package: SimBus F ● High level of integration - only one


    Original     		PDF MIXA600AF650TSF Air-co00 60747and

    Untitled

    Abstract: No abstract text available
    Text: MIXA600CF650TSF tentative XPT IGBT Module VCES = 650 V I C25 = 2x 720 A VCE sat = 1.65 V Common collector + free wheeling diodes Part number MIXA600CF650TSF Backside: isolated Features / Advantages: Applications: Package: SimBus F ● High level of integration - only one


    Original     		PDF MIXA600CF650TSF 60747and

    Untitled

    Abstract: No abstract text available
    Text: MIXA600AF650TSF tentative XPT IGBT Module VCES = 650 V I C25 = 2x 720 A VCE sat = 1.65 V Common emitter + free wheeling diodes Part number MIXA600AF650TSF Backside: isolated Features / Advantages: Applications: Package: SimBus F ● High level of integration - only one


    Original     		PDF MIXA600AF650TSF 60747and

    MIXA600PF650TSF

    Abstract: No abstract text available
    Text: MIXA600PF650TSF tentative XPT IGBT Module VCES = 2x 650 V I C25 = 720 A VCE sat = 1.65 V Phase leg + free wheeling Diodes + NTC Part number MIXA600PF650TSF Backside: isolated 5 2 1 8 7 4 3 6 9 10/11 Features / Advantages: Applications: Package: SimBus F ● High level of integration - only one


    Original     		PDF MIXA600PF650TSF 60747and MIXA600PF650TSF

    Untitled

    Abstract: No abstract text available
    Text: MIXA600CF650TSF tentative XPT IGBT Module VCES = 650 V I C25 = 2x 720 A VCE sat = 1.65 V Common collector + free wheeling diodes Part number MIXA600CF650TSF Backside: isolated Features / Advantages: Applications: Package: SimBus F ● High level of integration - only one


    Original     		PDF MIXA600CF650TSF Air-00 60747and

    Untitled

    Abstract: No abstract text available
    Text: MIXA600PF650TSF tentative XPT IGBT Module VCES = 2x 650 V I C25 = 720 A VCE sat = 1.65 V Phase leg + free wheeling Diodes + NTC Part number MIXA600PF650TSF Backside: isolated 5 2 1 8 7 4 3 6 9 10/11 Features / Advantages: Applications: Package: SimBus F ● High level of integration - only one


    Original     		PDF MIXA600PF650TSF 60747and

    MSI2001

    Abstract: MAGNACHIP
    Text: Preliminary – Subject to change without notice USB2.0 High-Speed 480Mbps Analog Switch General Description Features ±8kV Human Body Model (HBM) ESD protection on all pins Low CON : < 6.5pF (typical) Low RON : < 4.0Ω (typical) -3dB bandwidth : >720MHz (typical)


    Original     		PDF 480Mbps) 720MHz -45dB MSI2001 MSI2001 MAGNACHIP

    K3473

    Abstract: TOSHIBA K3473 transistor k3473 toshiba transistor k3473 K347 2SK3473 SC-65
    Text: 2SK3473 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3473 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.3Ω (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


    Original     		PDF 2SK3473 K3473 TOSHIBA K3473 transistor k3473 toshiba transistor k3473 K347 2SK3473 SC-65

    52s marking code transistor

    Abstract: 52s marking code 52s marking 2SK3633 SC-65
    Text: 2SK3633 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3633 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) High forward transfer admittance: |Yfs| = 5.2S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


    Original     		PDF 2SK3633 52s marking code transistor 52s marking code 52s marking 2SK3633 SC-65

    Untitled

    Abstract: No abstract text available
    Text: TK2P90E MOSFETs Silicon N-Channel MOS π-MOS TK2P90E 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 4.7 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 720 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.2 mA)


    Original     		PDF TK2P90E

    Untitled

    Abstract: No abstract text available
    Text: TK7J90E MOSFETs Silicon N-Channel MOS π-MOS TK7J90E 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.6 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 720 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.7 mA)


    Original     		PDF TK7J90E

    Untitled

    Abstract: No abstract text available
    Text: TK9A90E MOSFETs Silicon N-Channel MOS π-MOS TK9A90E 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.0 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 720 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.9 mA)


    Original     		PDF TK9A90E O-220SIS

    Untitled

    Abstract: No abstract text available
    Text: TK7A90E MOSFETs Silicon N-Channel MOS π-MOS TK7A90E 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.6 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 720 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.7 mA)


    Original     		PDF TK7A90E O-220SIS

    Untitled

    Abstract: No abstract text available
    Text: TK1Q90A MOSFETs Silicon N-Channel MOS π-MOS TK1Q90A 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 6.7 Ω (typ.) High forward transfer admittance: |Yfs| = 1.0 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 720 V)


    Original     		PDF TK1Q90A

    Untitled

    Abstract: No abstract text available
    Text: TK9J90E MOSFETs Silicon N-Channel MOS π-MOS TK9J90E 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.0 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 720 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.9 mA)


    Original     		PDF TK9J90E

    Untitled

    Abstract: No abstract text available
    Text: TK7A90E MOSFETs Silicon N-Channel MOS π-MOS TK7A90E 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.6 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 720 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.7 mA)


    Original     		PDF TK7A90E O-220SIS

    ABE 721

    Abstract: No abstract text available
    Text: SIEMENS NPN Silicon High-Voltage Transistors BF 720 BF 722 • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage • Low capacitance • Complementary types: BF 721/723 PNP


    OCR Scan     		PDF Q62702-F1238 Q62702-F1306 OT-223 A23SbGS ABE 721

    B 722 P

    Abstract: BB 722 DC DC BB 722
    Text: SIEMENS NPN Silicon High-Voltage Transistors • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage • Low capacitance BF 720 BF722 • Complementary types: BF 721/723 PNP


    OCR Scan     		PDF BF722 Q62702-F1238 Q62702-F1306 OT-223 B 722 P BB 722 DC DC BB 722

    MARKING BF

    Abstract: No abstract text available
    Text: SIEM ENS PNP Silicon High-Voltage Transistors BF 721 BF723 • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage • Low capacitance • Complementary types: BF 720/722 NPN


    OCR Scan     		PDF BF723 Q62702-F1239 Q62702-F1309 OT-223 EHP00555 MARKING BF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS PNP Silicon High-Voltage Transistors BF 721 BF 723 • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage • Low capacitance • Complementary types: BF 720/722 NPN


    OCR Scan     		PDF Q62702-F1239 Q62702-F1309 OT-223 flE35b05 D1E17DD EHP0055Ã

    Untitled

    Abstract: No abstract text available
    Text: MICRON SEM ICONDUCTOR INC b?E D • blllSHT OOG'ìbHS 720 B U R N I^IIC R O N 16K SRAM MODULE X MT8S1632 32 SRAM MODULE 16Kx 32 SRAM FEATURES • High speed: 10*, 15,20, 25 and 35ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply


    OCR Scan     		PDF MT8S1632 64-Pin MTSS1632