NT6SM32M16AG-S1
Abstract: NT6SM16M32 128M32 NT6SM16M32AK NT6SM32M16AG Lpddr2 Idd1 8M32R NT6SM16M32AK-S1 lpddr2 layout lpddr2 256mb
Text: 512Mb LPSDR SDRAM NT6SM32M16AG / NT6SM16M32AK / NT6SM16M32RAK Feature Options Fully synchronous; all signals registered on positive edge of Marking VDD /VDDQ system clock -1.8V/1.8V M Internal, pipelined operation; column address can be changed
|
Original
|
512Mb
NT6SM32M16AG
NT6SM16M32AK
NT6SM16M32RAK
-32Meg
-16Meg
-54-ball
-90-ball
x13mm)
32M16
NT6SM32M16AG-S1
NT6SM16M32
128M32
Lpddr2 Idd1
8M32R
NT6SM16M32AK-S1
lpddr2 layout
lpddr2 256mb
|
PDF
|
Lpddr2 Idd7
Abstract: COMMAND42 lpddr2 256mb lpddr2 layout NT6SM32M16AG-S2 LPDDR2 1Gb Memory NT6SM16M32
Text: 512Mb LPSDR SDRAM NT6SM32M16AG / NT6SM16M32AK / NT6SM16M32RAK Feature Options Fully synchronous; all signals registered on positive edge of Marking VDD /VDDQ system clock -1.8V/1.8V M Internal, pipelined operation; column address can be changed
|
Original
|
512Mb
NT6SM32M16AG
NT6SM16M32AK
NT6SM16M32RAK
-32Meg
-16Meg
-54-ball
-90-ball
x13mm)
32M16
Lpddr2 Idd7
COMMAND42
lpddr2 256mb
lpddr2 layout
NT6SM32M16AG-S2
LPDDR2 1Gb Memory
NT6SM16M32
|
PDF
|
NCP1937
Abstract: No abstract text available
Text: NCP1937 Combination Power Factor Correction and QuasiResonant Flyback Controllers for Adapters Common General Features http://onsemi.com MARKING DIAGRAM HV/X2 BO/X2 PControl SOIC−20 PONOFF Narrow Body QCT CASE 751BS Fault PSTimer QFB 1 20 NCP1937xxG AWLYWW
|
Original
|
NCP1937
751BS
NCP1937xxG
NCP1937/D
NCP1937
|
PDF
|
Lpddr2 Idd7
Abstract: 216-ball LPDDR2 NT6SM16M32 NT6SM16M32AK-S1
Text: 512Mb LPSDR SDRAM NT6SM16M32AK Feature Options Fully synchronous; all signals registered on positive edge of Marking VDD /VDDQ system clock -1.8V/1.8V M Internal, pipelined operation; column address can be changed Configuration every clock cycle
|
Original
|
512Mb
NT6SM16M32AK
-16Meg
-90-ball
x13mm)
16M32
Lpddr2 Idd7
216-ball LPDDR2
NT6SM16M32
NT6SM16M32AK-S1
|
PDF
|
Lpddr2 Idd7
Abstract: Jedec lpddr2 216-ball LPDDR 8Gb lpddr2-s2
Text: 256Mb LPSDR SDRAM NT6SM8M32AK Feature Options Fully synchronous; all signals registered on positive edge of Marking VDD /VDDQ system clock -1.8V/1.8V M Internal, pipelined operation; column address can be changed Configuration every clock cycle
|
Original
|
256Mb
NT6SM8M32AK
-16Meg
-54-ball
-90-ball
x13mm)
16M16
Lpddr2 Idd7
Jedec lpddr2
216-ball
LPDDR 8Gb
lpddr2-s2
|
PDF
|
NTC 200-9
Abstract: a2240 128M16 A1930 NT6SM16M32
Text: 512Mb LPSDR SDRAM NT6SM16M32AK Feature Options Fully synchronous; all signals registered on positive edge of Marking VDD /VDDQ system clock -1.8V/1.8V M Internal, pipelined operation; column address can be changed Configuration every clock cycle
|
Original
|
512Mb
NT6SM16M32AK
-16Meg
16M32
NTC 200-9
a2240
128M16
A1930
NT6SM16M32
|
PDF
|
NCP1937
Abstract: No abstract text available
Text: NCP1937 Combination Power Factor Correction and QuasiResonant Flyback Controllers for Adapters http://onsemi.com MARKING DIAGRAM HV/X2 BO/X2 PControl SOIC−20 PONOFF Narrow Body QCT CASE 751BS Fault PSTimer QFB XXXXX A WL YY WW G 1 20 XXXXXXXXXXXXG XXXXXXXXXXXXX
|
Original
|
NCP1937
NCP1937/D
|
PDF
|
lpddr2 256mb
Abstract: NT6DM8M32AC-T1 NT6DM16M16AD NT6DM8M32AC lpddr2 layout NT6DM8M32 Dual LPDDR2 lpddr2 256mb kgd lpddr2-s2
Text: 256Mb LPDDR SDRAM NT6DM16M16AD / NT6DM8M32AC Options Feature Double-data rate architecture; two data transfer per clock cycle Bidirectional, data strobe DQS is transmitted/received with data, to be used in capturing data at the receiver Marking VDD /VDDQ
|
Original
|
256Mb
NT6DM16M16AD
NT6DM8M32AC
-16Meg
16M16
lpddr2 256mb
NT6DM8M32AC-T1
NT6DM8M32AC
lpddr2 layout
NT6DM8M32
Dual LPDDR2
lpddr2 256mb kgd
lpddr2-s2
|
PDF
|
JEDEC51-1
Abstract: NCP1937 NCP1937C1DR2G
Text: NCP1937 Combination Power Factor Correction and QuasiResonant Flyback Controllers for Adapters http://onsemi.com MARKING DIAGRAM HV/X2 BO/X2 PControl SOIC−20 PONOFF Narrow Body QCT CASE 751BS Fault PSTimer QFB XXXXX A WL YY WW G 1 20 XXXXXXXXXXXXG XXXXXXXXXXXXX
|
Original
|
NCP1937
NCP1937/D
JEDEC51-1
NCP1937C1DR2G
|
PDF
|
A1930
Abstract: No abstract text available
Text: 256Mb LPSDR SDRAM NT6SM8M32AK Feature Options Fully synchronous; all signals registered on positive edge of Marking VDD /VDDQ system clock -1.8V/1.8V M Internal, pipelined operation; column address can be changed Configuration every clock cycle
|
Original
|
256Mb
NT6SM8M32AK
-16Meg
16M16
A1930
|
PDF
|
NCP1937
Abstract: NTC thermistor circuit diagram TTC03 PFC inductor TTC-03
Text: NCP1937 Combination Power Factor Correction and QuasiResonant Flyback Controllers for Adapters http://onsemi.com MARKING DIAGRAM HV/X2 BO/X2 PControl SOIC−20 PONOFF Narrow Body QCT CASE 751BS Fault PSTimer QFB XXXXX A WL YY WW G 1 20 XXXXXXXXXXXXG XXXXXXXXXXXXX
|
Original
|
NCP1937
NCP1937/D
NTC thermistor circuit diagram
TTC03
PFC inductor
TTC-03
|
PDF
|
NT6DM16M16AD-T1
Abstract: 64M32 HP 3458 NT6DM16M16AD-T1I
Text: 256Mb LPDDR SDRAM NT6DM16M16AD / NT6DM8M32AC Options Feature Double-data rate architecture; two data transfer per clock cycle Bidirectional, data strobe DQS is transmitted/received with data, to be used in capturing data at the receiver Marking VDD /VDDQ
|
Original
|
256Mb
NT6DM16M16AD
NT6DM8M32AC
-16Meg
16M16
NT6DM16M16AD-T1
64M32
HP 3458
NT6DM16M16AD-T1I
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Si1901DL New Product Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (mA) 3.8 @ VGS = –4.5 V –180 5.0 @ VGS = –2.5 V –100 SOT-363 SC-70 (6-Leads) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code QD XX YY S1 Lot Traceability
|
Original
|
Si1901DL
OT-363
SC-70
08-Apr-05
|
PDF
|
Si1901DL
Abstract: D234
Text: Si1901DL New Product Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (mA) 3.8 @ VGS = –4.5 V –180 5.0 @ VGS = –2.5 V –100 SOT-363 SC-70 (6-Leads) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code QD XX YY S1 Lot Traceability
|
Original
|
Si1901DL
OT-363
SC-70
S-01886--Rev.
28-Aug-00
D234
|
PDF
|
|
|
HCT595AG
Abstract: MC74HCT595ADG MC74HCT595A
Text: MC74HCT595A 8-Bit Serial-Input/Serial or Parallel-Output Shift Register with Latched 3-State Outputs and LSTTL Compatible Inputs http://onsemi.com MARKING DIAGRAMS High−Performance Silicon−Gate CMOS The MC74HCT595A consists of an 8−bit shift register and an 8−bit
|
Original
|
MC74HCT595A
HCT595A
SOIC-16
TSSOP-16
MC74HCT595A/D
HCT595AG
MC74HCT595ADG
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MC74HCT595A 8-Bit Serial-Input/Serial or Parallel-Output Shift Register with Latched 3-State Outputs and LSTTL Compatible Inputs http://onsemi.com MARKING DIAGRAMS High−Performance Silicon−Gate CMOS The MC74HCT595A consists of an 8−bit shift register and an 8−bit
|
Original
|
MC74HCT595A
MC74HCT595A
HCT595A
MC74HCT595A/D
|
PDF
|
DD05215
Abstract: ADD1210
Text: A t* t '$ / PRELIM INARY DATA SHEET HAL115 Hall Effect Sensor IC à 4bfl2711 Ü005213 410 Edition June 30, 1995 6 2 5 1 -41 4-2 P D ITT Semiconductors ctors ITT HAL115 PRELIMINARY DATASHEET Hall Effect Sensor 1C in CMOS technology Marking Code Type Marking
|
OCR Scan
|
HAL115
6251-414-2PD
4tfl2711
DD05215
ADD1210
|
PDF
|
k192a
Abstract: c2458 C2498 C2668 C2717 C1923 Y C2499 k710 K241 C2995
Text: ALPHANUMERICAL INDEX Type No. Marking Page Type No. Marking 1SS154 BA 105 1SV217 T6 175 1SS239 SI 107 1SV224 T7 177 1SS241 TY 109 1SV225 V3 179 1SS242 S2 111 1SV226 TA 181 1SS268 BF 113 1SV227 T9 183 1SS269 BG 115 1SV228 V4 185 1SS271 BD 117 1SV229 T8 188
|
OCR Scan
|
1SS154
1SS239
1SS241
1SS242
1SS268
1SS269
1SS271
1SS295
1SS312
1SS313
k192a
c2458
C2498
C2668
C2717
C1923 Y
C2499
k710
K241
C2995
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 3SE D • flS3b32Q QDlbflOl 2 « S I P Silicon N Channel MOSFET-Tetrode BF994S _ SIEMENS/ SPCL-i SEMICONDS _ • For VHF applications, especially for input and mixer stages with wide tuning range, e.g. In CATV tuners Type Marking Ordering code
|
OCR Scan
|
flS3b32Q
BF994S
Q62702-F963
Q62702-F1020
T-31-25
23b320
|
PDF
|
Magnetic Field Sensor FLC 100
Abstract: transistor ITT
Text: HAL628, HAL638 ADVANCE INFORMATION Hall Effect Sensor 1C in CMOS technology Marking Code Type Tern perature Rimge Common Features: -• - switching offset compensation - operates from 4.5 V to 24 V supply voltage - overvoltage and reverse-voltage protection
|
OCR Scan
|
HAL628,
HAL638
628UA,
HAL628S
HAL638UA,
HAL638S
170ch
Magnetic Field Sensor FLC 100
transistor ITT
|
PDF
|
HAL628
Abstract: 004-G intermetall 638UA
Text: HAL628, HAL638 Hall Effect Sensor 1C in CMOS technology ADVANCE INFORMATION Marking Code Temperature Range Type Common Features: - switching offset compensation - operates from 4.5 V to 24 V supply voltage HAL 628UA, HAL628S - overvoltage and reverse-voltage protection
|
OCR Scan
|
HAL628,
HAL638
628UA,
HAL628S
638UA,
HAL638S
4083ion
HAL628
004-G
intermetall
638UA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MODEL ST-30 Chip Potentiometers Surface Mount, .118" [3.0m m ] Square Single Turn, Open Fram e FEATURES • Designed for efficient, accurate miniaturization • Can be wave or dip soldered without rotor problems • Coded marking for easy identification of resistance value
|
OCR Scan
|
ST-30
250PPM/Â
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION HAL 800 Programmable Linear Hall Effect Sensor r MICRO NAS Edition Aug. 24, 1998 6251-441-1 Al INTERMETALL HAL 800 ADVANCE INFORMATION Contents Page Section Title 3 3 1. 1.1. Introduction Major Applications 3 1.2. Features 4 1.3. Marking Code
|
OCR Scan
|
|
PDF
|
diode code ae 89A
Abstract: diode AE 89A 377 hall sensor ITT INTERMETALL ITT semiconductors ITT 30 15 an 220 diode ITT specification
Text: Edition May 7,1997 6251-345-4PD ITT INTER METALL 4^82711 GOObSflG TIE HAL300 PRELIMINARY DATA SHEET Marking Code Differential Hall Effect Sensor 1C in CMOS technology Type Tem serature Riinge Release Notes: Revision bars indicate significant changes to the previous edition.
|
OCR Scan
|
6251-345-4PD
HAL300
diode code ae 89A
diode AE 89A
377 hall sensor
ITT INTERMETALL
ITT semiconductors
ITT 30 15 an 220
diode ITT specification
|
PDF
|
