MARKING R1N Search Results

MARKING R1N Result Highlights (5)

Part	Manufacturer	Description
5962-8950303GC	Rochester Electronics LLC	ICM7555M - Dual Marked (ICM7555MTV/883)
54HC221AJ/883C	Rochester Electronics LLC	54HC221AJ/883C - Dual marked (5962-8780502EA)
MG8097/B	Rochester Electronics LLC	8097 - Math Coprocessor - Dual marked (8506301ZA)
5490/BCA	Rochester Electronics LLC	5490 - Decade Counter - Dual marked (M38510/01307BCA)
5405/BCA	Rochester Electronics LLC	5405 - Gate - Dual marked (M38510/00108BCA)

MARKING R1N Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
TBF1608-245-R1N Abstract: cyntec TBF Text: CYNTEC CO., LTD. 乾坤科技股份有限公乾坤科技股份有限公司份有限公司 DOCUMENT : TBF1608245R1N REVISION : A0 PAGE : 1 OF 8 TBF-1608-245-R1N THIN FILM BAND PASS FILTER 1. Feature 1-1 Thin Film Band Pass Filter 1-2 WLAN Band Application.	Original	TBF1608245R1N TBF-1608-245-R1N TBF1608-245-R1N cyntec TBF	PDF
TBF-1608-245-R1N Abstract: MARKING R1n cyntec TBF Text: TBF-1608-245-R1N THIN FILM BAND PASS FILTER 1. Feature 1-1 Thin Film Band Pass Filter 1-2 WLAN Band Application. 1-3 Ultra Low Profile 1-4 Lead Free, RoHS compliance 2. Part Number TBF — 1608 — 1 (2) Where 245 (3) — R1N (4) (1) TBF : Thin Film Band Pass Filter	Original	TBF-1608-245-R1N TBF-1608-245-R1N 2450MHz 2500MHz 1910MHz 5000MHz TBFC245R1N-001 MARKING R1n cyntec TBF	PDF
2N4401 EBC Abstract: marking 1F SMT3 marking r2k MARKING G1.G IC marking R2k MMST8598 marking G3K Text: Transistors USA / European specification models types [Surface mounting type] • U M T 3 /N P N type General purpose small signal amplifiers Product name BC84Ô8W BVcbo BVceo BViao Min. Min. Min. V (V) (V) 5 30 30 • U M T 3 / PNP ic Max. CmA) iCBO Max.	OCR Scan	BC858BW MPSA63 MPSA64 2N4401 EBC marking 1F SMT3 marking r2k MARKING G1.G IC marking R2k MMST8598 marking G3K	PDF
sot83 Abstract: MARKING CODE R1C marking r2k IC marking R2k R2C marking marking r1c SOT23 R2P marking code R2C Text: U.S. European Type Series SST U.S. / European SOT-23 • SMT (SC-59 / Japanese SOT-23) •Package style and dimensions ,Unit : r SST SMT (U. & /European SOT-23) (SC-59/Japanese SOT-23) 2 0 .4 5 ± 0 .1 0 .9 5 1 0.8 + 0 . 1 ! (g)Frl t l °-95-o Î .0.95 Dimensions	OCR Scan	OT-23) SC-59 SC-59/Japanese -95-o sot83 MARKING CODE R1C marking r2k IC marking R2k R2C marking marking r1c SOT23 R2P marking code R2C	PDF
NPN CBO 40V CEO 25V EBO 5V Abstract: MMST8598 Text: Transistors SST U. S. /European SOT-23 • SMT (SC-59/Japanese SOT-23) #NPN Transistors General purpose small signal amplifiers SST SMT SST1130 MMST1130 BV cbo BVceo Min. Min. 30V 25V Vce (sat) BV ebo '“ ° @VCB . hff. @lc & Vce Min. Max. Min. Max. Max.	OCR Scan	OT-23) 200mA SC-59/Japanese SST1130 MMST1130 SST5088 MMST5088 100nA 50MHz NPN CBO 40V CEO 25V EBO 5V MMST8598	PDF
SST4124 Abstract: SST5086 SST5089 R2F SOT-23 marking c33 MMSTA70 SOT-23 R2C r1a SOT23 SSTA13 R2C marking Text: U.S. European Type Series SST U.S. / European SOT-23 • SMT (SC-59 / Japanese SOT-23) •Package style and dimensions (Unit SST SMT (U. S. /European SOT-23) (SC-59/Japanese SOT-23) 0.951°-* 1 .9± 0.2 f> > 1.9± 0.2 0 .4 5 ± 0 .1 0 .9 5 0.95 ;0 . 9 5 0 . 9 5	OCR Scan	OT-23) SC-59 SC-59/Japanese -95-o GD1D47S No100mA 50MHz SST4124 SST5086 SST5089 R2F SOT-23 marking c33 MMSTA70 SOT-23 R2C r1a SOT23 SSTA13 R2C marking	PDF
MARKING CODE R1C Abstract: R2F SOT-23 R1H MARKING CODE 1T1 SOT-23 MMST3904 MMST8598 SOT-23 MARKING R2X SSTA29 R2C marking SOT-23 R2C Text: U.S. European Type Series SST U.S. / European SOT-23 • SMT (SC-59 / Japanese SOT-23) •Package style and dimensions (Unit SST SMT (U. S. /European SOT-23) (SC-59/Japanese SOT-23) 0 .9 5 1 °- * 1 .9 ± 0 .2 f> > 1.9± 0.2 0.45 ±0.1 0.95 0.95 ; 0.95 0.95	OCR Scan	OT-23) SC-59 SC-59/Japanese -95-o GD1D47S 00104A0 MARKING CODE R1C R2F SOT-23 R1H MARKING CODE 1T1 SOT-23 MMST3904 MMST8598 SOT-23 MARKING R2X SSTA29 R2C marking SOT-23 R2C	PDF
part r1G Abstract: SSTA14 14K140K SSTA05 MARKING C16 marking C33 Text: Transistors For Medium Power Amplification 60V 80V 80V ' f 0 @VCB Max. lOOnA 60V 4V 4V - hFE @lc & Min. Max. 100nA 80V < n m 60V o SSTA06 j MMSTA06 BV ceo Min. II SSTA05 " BVcbo Min. CO Part No. Package SST3 SMT3 100 10mA 1V 100 100mA 1V 100 10mA	OCR Scan	SSTA05 SSTA06 MMSTA06 100mA 100mA 500mA 500mA 100nA 100MHz part r1G SSTA14 14K140K MARKING C16 marking C33	PDF
transistor BF 506 Abstract: bf506 wl SOT-23 Text: TELEFUNKEN ELECTRONIC filC D • A'^QQ'Jb 0005513 'i ■ AL6G ^ 7 2 / ~ TTIdilFlLDMDSIKl electronic \| B F 506 Creative Technologies * Silicon PNP RF Transistor Applications: Oscillator-, mixer and uncontrolled pre-amplifier stages up to 300 MHz Features: • Small feedback capacitance	OCR Scan	569-GS transistor BF 506 bf506 wl SOT-23	PDF
marking r2k Abstract: marking r1c GAJ SOT23 R1P SOT-223 Text: Transistors SST U. S. /European SOT-23 • SMT (SC-59/Japanese SOT-23) •N P N Transistors General purpose small signal amplifiers SST SMT BV qbo Min. BV ceo Min. b v EB0 Min. SSTH30 MMST1130 30V 25V 5V SST5088 MMST5088 35V 30V 4.6V 'f° Max. @VCB . hF.E.	OCR Scan	OT-23) SSTH30 MMST1130 SC-59/Japanese BCX70K BCX71G BCX71H BCX71J BFS17 marking r2k marking r1c GAJ SOT23 R1P SOT-223	PDF
sot23 marking code 8pf Abstract: marking r2k R2Z SOT23 SSTA29 G1F G1K G3F MARKING CODE B25 SOT23-5 Text: Transistors SST U. S. /European SOT-23 • SMT (SC-59/Japanese SOT-23) #NPN Transistors General purpose small signal amplifiers SST SST1130 SMT MMST1130 BVcbo BVceo BV ebo @VC8 ui Min. Min. Min. Max. Min. Max. 30V 25V 5V 50nA 20V 120 360 60 ^ ^ce 2mA 1V	OCR Scan	OT-23) SC-59/Japanese SST1130 MMST1130 200mA SST5088 MMST5088 100nA SST5089 sot23 marking code 8pf marking r2k R2Z SOT23 SSTA29 G1F G1K G3F MARKING CODE B25 SOT23-5	PDF
Untitled Abstract: No abstract text available Text: THIRD ANGLE PROJECTION I ALTERATION [け 1 Ih，1 ，1， 11 Ih， r i_l 山いl DATE Apr . 1 2012 Apr . 1 2 13 ム 1Company name changed ムl 川C om 州山 l E t t t ， ¥ I E 掠コ = SYMBOL j 0r K _tl~1i;jι 二月中~ 一 ~ ; Jp j ITEM C O D E NUMBER	Original	10123ROFI H10153ROFI H10183R H10223ROFI H10273R H10333ROFI H10393ROFI H10473R H10563ROFI H10683ROFI	PDF
Untitled Abstract: No abstract text available Text: MMBTA13 / MMBTA14 NPN SURFACE MOUNT DARLINGTON TRANSISTOR POWER SEMICONDUCTOR Features • • • • Epitaxial Planar Die Construction Complementary PNP Types Available MMBTA63 / MMBTA64 Ideal for Medium Power Amplification and Switching High Current Gain	Original	MMBTA13 MMBTA14 MMBTA63 MMBTA64) OT-23 OT-23, MIL-STD-202, MMBTA14 100mA,	PDF
Untitled Abstract: No abstract text available Text: MMBTA13 / MMBTA14 NPN SURFACE MOUNT DARLINGTON TRANSISTOR Features • · · · Epitaxial Planar Die Construction Complementary PNP Types Available MMBTA63 / MMBTA64 Ideal for Medium Power Amplification and Switching High Current Gain SOT-23 A C TOP VIEW	Original	MMBTA13 MMBTA14 MMBTA63 MMBTA64) OT-23 OT-23, MIL-STD-202, MMBTA14 100mA	PDF

MMBTA13 Abstract: T1A SOT23 MMBTA14 MMBTA63 MMBTA64 MARKING R1n Text: TRANSYS MMBTA13 / MMBTA14 ELECTRONICS NPN SURFACE MOUNT DARLINGTON TRANSISTOR LIMITED Features Epitaxial Planar Die Construction Complementary PNP Types Available MMBTA63 / MMBTA64 Ideal for Medium Power Amplification and Switching High Current Gain SOT-23	OCR Scan	MMBTA13 MMBTA14 MMBTA63 MMBTA64) OT-23, MIL-STD-202, MMBTA14 OT-23 T1A SOT23 MMBTA64 MARKING R1n	PDF
MMBTA13 Abstract: MMBTA14 MMBTA63 MMBTA64 Text: MMBTA13 / MMBTA14 NPN SURFACE MOUNT DARLINGTON TRANSISTOR LITEM ZI y POWER SEMICONDUCTOR Features • • • • Epitaxial Planar Die Construction Complementary PNP Types Available M M BTA63 / M M BTA64 Ideal for Medium Power Amplification and Switching	OCR Scan	MMBTA13 MMBTA14 MMBTA63 MMBTA64) OT-23, MIL-STD-202, MMBTA14 OT-23 100mA, MMBTA64	PDF
Untitled Abstract: No abstract text available Text: MMBTA13 I MMBTA14 NPN SURFACE MOUNT DARLINGTON TRANSISTOR Features • • • • Epitaxial Planar Die Construction Complementary PNP Types Available M M B TA 63 / M M BTA64 Ideal for Medium Power Amplification and Switching High Current Gain SOT-23 •	OCR Scan	MMBTA13 MMBTA14 BTA64) OT-23 IL-STD-202, BTA14 ATA14 100mA, 100MHz	PDF
MARKING R1n Abstract: MMBTA13 MMBTA14 MMBTA63 MMBTA64 Text: MMBTA13 / MMBTA14 C O R P O R A T E NPN SURFACE MOUNT DARLINGTON TRANSISTOR D Features • • • • Epitaxial Planar Die Construction Com plem entary PNP Types Available MMBTA63 / MMBTA64 Ideal for Medium Power Am plification and Switching High Current Gain	OCR Scan	MMBTA13 MMBTA14 MMBTA63 MMBTA64) OT-23, MIL-STD-202, MMBTA14 OT-23 MARKING R1n MMBTA64	PDF
2SC2411KR Abstract: MMST8598 2SD1781KQ 2SA1036KR MMST5086 MMST5088 2sa1037aks ROHM marking AQ 2SD1781KR MMST4124 Text: SC-59 BIPOLAR TRANSISTORS NPN TRANSISTORS The latest comprehensive data to fully support these parts is readily available. • • • • • • New Product Type Function 2SC2411KP amplifier 2SC2411KQ amplifier 2SC2411KR amplifier 2SC2412KQ general purpose	Original	SC-59 2SC2411KP 2SC2411KQ 2SC2411KR 2SC2412KQ 2SC2412KR 2SC2412KS 2SC2413KP 2SC2413KQ 2SC3837K MMST8598 2SD1781KQ 2SA1036KR MMST5086 MMST5088 2sa1037aks ROHM marking AQ 2SD1781KR MMST4124	PDF
ROHM Electronics 1n4004 52mm Abstract: 1N4003 1N4001 silicon 1n4004 52mm R1N4001 N4001 1N4001 1N4002 1N4004 T-81 Text: IRHM T ñ S f i ' m O D DR Ol ? fiMT 1N4001 - l'rico' ''K ' ihm -1N4004/5 SEMICONDUCTORS ROHM ELECTRONICS 3034 Owen Drive, Antioch, TN 37013 - TEL: 615 641-2020 FAX:(615)641 -2022 . nn. Ä I Silicon Diffused Junction Glass-Sealed Rectifying Diodes APPLICATION	OCR Scan	4oofA-1N4004/? DO-41 DO-41) 1N4001 1N4002 1N4003 1N4004 ROHM Electronics 1n4004 52mm 1N4001 silicon 1n4004 52mm R1N4001 N4001 T-81	PDF
Untitled Abstract: No abstract text available Text: SEMICONDUCTOR TECHNICAL DATA KDS125T s il ic o n e p it a x ia l p l a n a r d io d e ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES • Small package : TS6. • Low forward voltage. • Fast reverse recovery time. • Small total capacitance. MAXIMUM RATING Ta=25°C	OCR Scan	KDS125T 100mA	PDF
A14 marking SOT Abstract: to-92 case connections MPSA DARLINGTON MPSA13 a13 marking sot23 sot-23 body marking A 4 MARKING R1n 432 sot23 A14 SOT23-5 MMBTA13 Text: MPSA13/14 / MMBTA13/14 NPN DARLINGTON TRANSISTORS POWER SEMICONDUCTOR Features • • • MMBTA13 / MMBTA14 High Current Gains Monolithic Construction Available in Both Through-Hole and Surface Mount Packages A C TOP VIEW B C B E G E D H K Mechanical Data	Original	MPSA13/14 MMBTA13/14 MMBTA13 MMBTA14 OT-23 MPSA13 MPSA14 O-92/SOT-23, MIL-STD-202, OT-23 A14 marking SOT to-92 case connections MPSA DARLINGTON a13 marking sot23 sot-23 body marking A 4 MARKING R1n 432 sot23 A14 SOT23-5	PDF
Diode marking CODE R1j Abstract: Diode marking CODE R1K Diode marking CODE R1M R1M 29 CD214A-R150 R1100 R1200 R1600 Text: PL IA NT Features S CO M • R oH ■ ■ ■ ■ ■ Lead free as standard RoHS compliant Glass passivated chip Low reverse leakage current Low forward voltage drop High current capability CD214A-R150~R11600 Glass Passivated Rectifiers General Information	Original	CD214A-R150 R11600 DO-214AC 2002/95/EC IPA0501 Diode marking CODE R1j Diode marking CODE R1K Diode marking CODE R1M R1M 29 R1100 R1200 R1600	PDF
Diode marking CODE R1K Abstract: Diode marking CODE R1j 4 8 Diode marking CODE R1j Text: PL IA NT Features S CO M • R oH ■ ■ ■ ■ RoHS compliant Glass passivated chip Low reverse leakage current Low forward voltage drop High current capability CD214A-R150~R12000 Glass Passivated Rectifiers General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop	Original	CD214A-R150 R12000 DO-214AC Diode marking CODE R1K Diode marking CODE R1j 4 8 Diode marking CODE R1j	PDF

MARKING R1N Search Results

MARKING R1N Result Highlights (5)

MARKING R1N Datasheets Context Search

TBF1608-245-R1N

TBF-1608-245-R1N

2N4401 EBC

sot83

NPN CBO 40V CEO 25V EBO 5V

SST4124

MARKING CODE R1C

part r1G

transistor BF 506

marking r2k

sot23 marking code 8pf

Untitled

Untitled

Untitled

MMBTA13

MMBTA13

Untitled

MARKING R1n

2SC2411KR

ROHM Electronics 1n4004 52mm

Untitled

A14 marking SOT

Diode marking CODE R1j

Diode marking CODE R1K