marking BSs sot-23
Abstract: Q67000-S132 E6327 marking BSs SOT23 MARKING SBs
Text: BSS 145 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • VGS th = 1.4 .2.3 V Pin 1 Pin 2 G Pin 3 S Type VDS ID RDS(on) Package Marking BSS 145 65 V 0.22 A 3.5 Ω SOT-23 SBs Type BSS 145 Ordering Code Q67000-S132 D Tape and Reel Information
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Original
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OT-23
Q67000-S132
E6327
Sep-13-1996
marking BSs sot-23
Q67000-S132
E6327
marking BSs
SOT23 MARKING SBs
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PDF
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E6327
Abstract: Q67000-S132 0051A marking BSs
Text: BSS 145 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • VGS th = 1.4 .2.3 V Pin 1 Pin 2 G Pin 3 S Type VDS ID RDS(on) Package Marking BSS 145 65 V 0.22 A 3.5 Ω SOT-23 SBs Type BSS 145 Ordering Code Q67000-S132 D Tape and Reel Information
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Original
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OT-23
Q67000-S132
E6327
E6327
Q67000-S132
0051A
marking BSs
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PDF
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Untitled
Abstract: No abstract text available
Text: 131.8MHz SAW Filter 4.4MHz Bandwidth China Electronics Technology Group Corporation No.26 Research Institute SIPAT Co., Ltd. S13202 Part Number: LB LBS13202 www.sipatsaw.com Features � For IF SAW filter � High attenuation � Single-ended operation �
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Original
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LBS13202
2002/95/EC)
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PDF
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Untitled
Abstract: No abstract text available
Text: SiP32101 www.vishay.com Vishay Siliconix 6.5 m, Bi-Directional Battery Switch in Compact WCSP DESCRIPTION FEATURES The SiP32101 bidirectional switch features reverse blocking capability to isolate the battery from the system. The internal switch has an ultra-low 6.5 m typ at 3.3 V on-resistance
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Original
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SiP32101
12-Bump,
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SiP32101, SiP32102 www.vishay.com Vishay Siliconix 6.5 mΩ, Bi-Directional Battery Switch in Compact WCSP DESCRIPTION FEATURES The SiP32101 and SiP32102 bidirectional switches feature reverse blocking capability to isolate the battery from the system. The internal switch has an ultra-low 6.5 mΩ
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Original
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SiP32101
SiP32102
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SiP32101, SiP32102 www.vishay.com Vishay Siliconix 6.5 mΩ, Bi-Directional Battery Switch in Compact WCSP DESCRIPTION FEATURES The SiP32101 and SiP32102 bidirectional switches feature reverse blocking capability to isolate the battery from the system. The internal switch has an ultra-low 6.5 mΩ
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Original
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SiP32101
SiP32102
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SiP32101, SiP32102 www.vishay.com Vishay Siliconix 6.5 mΩ, Bi-Directional Battery Switch in Compact WCSP DESCRIPTION FEATURES The SiP32101 and SiP32102 bidirectional switches feature reverse blocking capability to isolate the battery from the system. The internal switch has an ultra-low 6.5 mΩ
|
Original
|
SiP32101
SiP32102
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SiP32101 www.vishay.com Vishay Siliconix 6.5 m, Bi-Directional Battery Switch in Compact WCSP DESCRIPTION FEATURES The SiP32101 bidirectional switch features reverse blocking capability to isolate the battery from the system. The internal switch has an ultra-low 6.5 m typ at 3.3 V on-resistance
|
Original
|
SiP32101
12-Bump,
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SiP32101, SiP32102, SiP32103 www.vishay.com Vishay Siliconix 6.5 mΩ, Bi-Directional Battery Switch in Compact WCSP DESCRIPTION FEATURES The SiP32101, SiP32102, and SiP32103 bidirectional switches feature reverse blocking capability to isolate the battery from the system. The internal switch has an ultra-low
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Original
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SiP32101
SiP32102
SiP32103
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
PDF
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s132 power mosfet
Abstract: marking S132 FSS132
Text: FSS132 P- Channel Silicon MOSFET Load Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Very high speed switching. • 4V drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage Drain Current DC
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Original
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FSS132
--10V
FSS132
990928TM2fXHD
s132 power mosfet
marking S132
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PDF
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Untitled
Abstract: No abstract text available
Text: Si5446DU www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A) a RDS(on) () MAX. 30 0.0064 at VGS = 10 V 25 0.0070 at VGS = 6 V 25 0.0085 at VGS = 4.5 V 25 • TrenchFET Power MOSFET • Thermally enhanced PowerPAK®
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Original
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Si5446DU
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
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Untitled
Abstract: No abstract text available
Text: SQ2318AES www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 40 RDS(on) () at VGS = 10 V 0.031 RDS(on) () at VGS = 4.5 V 0.036 ID (A) • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested
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Original
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SQ2318AES
AEC-Q101
OT-23
O-236)
SQ2318AES-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
PDF
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tokin d-03c
Abstract: M-521CT SBS9080-509T M-542CT SSB050 ST-110BH D-03C1 SS11V-R M-522CT SBT-0260
Text: 03 Contents Classtification of NEC TOKIN's EMI Suppression parts.･･････3 DIP type Commom Mode Power Line SH Series ･････････････････････････････････････････････8
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Original
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SBT-03
SBT-01
D-03C,
08C2A
D-16C,
D-37C,
40C-47C
D-55C,
SZ-03
ST-101,
tokin d-03c
M-521CT
SBS9080-509T
M-542CT
SSB050
ST-110BH
D-03C1
SS11V-R
M-522CT
SBT-0260
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PDF
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Untitled
Abstract: No abstract text available
Text: Si5446DU www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A) a RDS(on) () MAX. 30 0.0064 at VGS = 10 V 25 0.0070 at VGS = 6 V 25 0.0085 at VGS = 4.5 V 25 • TrenchFET Power MOSFET • Thermally enhanced PowerPAK®
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Original
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Si5446DU
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
|
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Untitled
Abstract: No abstract text available
Text: Si5442DU Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () Max. (A)a ID 0.0100 at VGS = 4.5 V 25 0.0115 at VGS = 2.5 V 25 0.0135 at VGS = 1.8 V 25 • TrenchFET Power MOSFET • Thermally Enhanced PowerPAK® ChipFET® Package
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Original
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Si5442DU
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Si5442DU Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () Max. (A)a ID 0.0100 at VGS = 4.5 V 25 0.0115 at VGS = 2.5 V 25 0.0135 at VGS = 1.8 V 25 • TrenchFET Power MOSFET • Thermally Enhanced PowerPAK® ChipFET® Package
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Original
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Si5442DU
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SQ2318AES www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 40 RDS(on) () at VGS = 10 V 0.031 RDS(on) () at VGS = 4.5 V 0.036 ID (A) • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested
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Original
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SQ2318AES
AEC-Q101
OT-23
O-236)
SQ2318AES-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
PDF
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Untitled
Abstract: No abstract text available
Text: SiA936EDJ www.vishay.com Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () MAX. ID (A) 0.034 at VGS = 4.5 V 4.5a 0.037 at VGS = 3.7 V 4.5a 0.045 at VGS = 2.5 V 4.5a • TrenchFET Power MOSFET • Thermally enhanced PowerPAK® SC-70 package
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Original
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SiA936EDJ
SC-70
SC-70-6L
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si2323CDS Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) () ID (A)a 0.039 at VGS = -4.5 V -6e 0.050 at VGS = -2.5 V -5.8 0.063 at VGS = -1.8 V -5.1 VDS (V) -20 Qg (Typ.) 9 nC APPLICATIONS • Load Switch • PA Switch
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Original
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Si2323CDS
O-236
OT-23)
Si2323CDS-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
PDF
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Untitled
Abstract: No abstract text available
Text: BSS 145 Infineon t«ehno!ogi6* SIPMOS Small-Signal Transistor • N channel s \A • Enhancement mode 2 • ^GS th = 1 4 -2-3 V 1 Pin 1 Pin 2 Vbs BSS 145 65 V Type BSS 145 Ordering Code Q67000-S132 0.22 A Pin 3 S G Type VPS05557 flDS(on) Package Marking
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OCR Scan
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Q67000-S132
VPS05557
OT-23
E6327
S35bG5
Q133777
SQT-89
B535bQ5
D13377Ã
B235bG5
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PDF
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SOT23 MARKING SBs
Abstract: VPS05557 marking SBs BSS145 SD marking BSs sot23 siemens
Text: SIEMENS BSS 145 SIPMOS Small-Signal Transistor h • N channel j\/\ • Enhancement mode 2 • ^GSith = 14 •••2-3 v 1 Pin 1 Pin 2 G Type Vos b BSS 145 65 V 0.22 A Type BSS 145 Ordering Code Q67000-S132 ffDS on) 3.5 n VPS05557 Pin 3 S Package Marking
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OCR Scan
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VPS05557
OT-23
Q67000-S132
E6327
BSS145
OT-23
GPS05557
SOT23 MARKING SBs
VPS05557
marking SBs
BSS145 SD
marking BSs sot23 siemens
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PDF
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TZP27B
Abstract: TZP33A tzp 33a zp 33a TZP10A zener 1n 4148 957B R 958B zener 56c marking CODE S139
Text: Part Marking <Switching D io d e s <Rectifier D io d e s) DO-35 GSD) DO-34<MSO) u§p Part No. M arking Part No. M arking P art No. M arking P art No. White 1S S130 White 1S2471 Black 1SS131 Black 1 S S 252 Black 1S 2472 Green 1S S132 Green 1S S253 Green 1S 24 73
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OCR Scan
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DO-35
1SS41
DO-34
1S2471
1SS131
B100A
TZP27B
TZP33A
tzp 33a
zp 33a
TZP10A
zener 1n 4148
957B
R 958B
zener 56c
marking CODE S139
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY M IC R O N I 1 MEG ¿R.IlCONDlA'IUH NO SRAM MODULE MT8LS132 X 32 SRAM MODULE 1 MEG X 32 SRAM 3.3VWITHOUTPUT ENABLE • • • • • • OPTIONS MARKING • Timing 15ns access 20ns access 25ns access 35ns access -15 -20 -25 -35 • Packages 72-pin SIMM
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OCR Scan
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72-Pin
72-pin
MT8LS132
0010S
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PDF
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Burr Brown part marking
Abstract: low noise 650nm laser diode ld 650NM photodiode photodiode amplifier 25CC OPT201 OPT201KP QPT201 REGULATOR IC 377 PLASTIC PACKAGE Burr-Brown IC appendix c
Text: Or, Call Customer S e m e al 1-8O0-548-S132 {USA Only INTEGRATED PHOTODIODE AND AMPLIFIER FEATURES DESCRIPTION • PHOTODIODE SIZE: 0.090 x 0.090 Inch 2.29 x 2.29mm) • 1M£i FEEDBACK RESISTOR • HIGH RESPONSIVITY: 0.45A/W ($50nm) The OPT201 is an opto-electronic integrated circuit
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OCR Scan
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1-8O0-548-S132
400nA
p00255m
OPT201
4-20mA
17313b5
00E5515
Burr Brown part marking
low noise 650nm laser diode ld
650NM photodiode
photodiode amplifier
25CC
OPT201
OPT201KP
QPT201
REGULATOR IC 377 PLASTIC PACKAGE
Burr-Brown IC appendix c
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PDF
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