28.6363MHZ
Abstract: S1509 28.636 S1500
Text: SaRonix Voltage Controlled Crystal Oscillator 5V, HCMOS Technical Data ACTUAL SIZE S1500 / S1509 Series Frequency Range: 1.5 MHz to 100 MHz Full Size 1.5 MHz to 28.6363 MHz ( Half Size) Frequency Stability: ±20, ±25 or ±50 ppm over all conditions: operating
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Original
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S1500
S1509
10ppm
phas510
DS-197
28.6363MHZ
28.636
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PDF
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28.6363MHZ
Abstract: S1509 28.636 smd diode code B2 SMD MARKING CODE 202 S1500 5- pin smd vm, smd marking CA
Text: SaRonix Voltage Controlled Crystal Oscillator 5V, HCMOS Technical Data ACTUAL SIZE S150x / ST150x Series Frequency Range: 1.5 MHz to 100 MHz Full Size 1.5 MHz to 28.6363 MHz ( Half Size ) Frequency Stability: ±20, ±25 or ±50 ppm over all conditions: operating
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Original
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S150x
ST150x
10ppm
DS-197
28.6363MHZ
S1509
28.636
smd diode code B2
SMD MARKING CODE 202
S1500
5- pin smd vm,
smd marking CA
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PDF
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Saronix
Abstract: S1509 S1500 Saronix 100 MHz oscillator SARONIX 94 smd diode code B2 S-1509 S-150-9 SMD 4608 28.6363MHZ
Text: SaRonix Voltage Controlled Crystal Oscillator 5V, HCMOS Technical Data ACTUAL SIZE S150x / ST150x Series Frequency Range: 1.5 MHz to 100 MHz Full Size 1.5 MHz to 28.6363 MHz ( Half Size ) Frequency Stability: ±20, ±25 or ±50 ppm over all conditions: operating
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Original
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S150x
ST150x
10ppm
DS-197
Saronix
S1509
S1500
Saronix 100 MHz oscillator
SARONIX 94
smd diode code B2
S-1509
S-150-9
SMD 4608
28.6363MHZ
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PDF
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Untitled
Abstract: No abstract text available
Text: Si8499DB www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 RDS(on) () ID (A) e 0.032 at VGS = -4.5 V -16 0.046 at VGS = -2.5 V -14.3 0.065 at VGS = -2.0 V -12 0.120 at VGS = -1.8 V -2.5 MICRO FOOT 1.5 x 1
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Original
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Si8499DB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si8416DB www.vishay.com Vishay Siliconix N-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 RDS(on) () MAX. ID (A) d 0.023 at VGS = 4.5 V 16 0.025 at VGS = 2.5 V 16 0.030 at VGS = 1.8 V 16 0.040 at VGS = 1.5 V 15 0.095 at VGS = 1.2 V 3 MICRO FOOT 1.5 x 1
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Original
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Si8416DB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si8406DB www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () MAX. ID (A) 0.033 at VGS = 4.5 V 16 e 0.037 at VGS = 2.5 V 16 e 0.042 at VGS = 1.8 V 15 MICRO FOOT 1.5 x 1 x xxx xx x 1 m m S 3 D 4 Qg (TYP.)
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Original
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Si8406DB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si8497DB www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -30 RDS(on) () MAX. ID (A) d 0.053 at VGS = -4.5 V -13 0.071 at VGS = -2.5 V -11 0.120 at VGS = -2 V -5 MICRO FOOT 1.5 x 1 D 4 x xxx xx x 1 m m S 3 mm
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Original
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Si8497DB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si8483DB www.vishay.com Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -12 RDS(on) () (MAX.) ID (A) e 0.026 at VGS = -4.5 V -16 0.035 at VGS = -2.5 V -16 0.055 at VGS = -1.8 V -13 0.092 at VGS = -1.5 V -2.5 MICRO FOOT 1.5 x 1
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Original
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Si8483DB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SQ7414AENW www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET power MOSFET 60 RDS(on) (Ω) at VGS = 10 V 0.023 RDS(on) (Ω) at VGS = 4.5 V 0.028 ID (A) • Low thermal resistance PowerPAK® 1212-8
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SQ7414AENW
AEC-Q101
212-8W
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SQ7414AEN www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) at VGS = 10 V 0.026 RDS(on) (Ω) at VGS = 4.5 V 0.036 ID (A) 16 Configuration Single PowerPAK 1212-8 Single D D 8 D 7
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Original
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SQ7414AEN
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SiHF22N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • Generation one 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V • High EAR capability 0.190 Qg max. (nC) 98 • Lower figure-of-merit Ron x Qg Qgs (nC)
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SiHF22N60S
O-220
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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SIHB22N60S
Abstract: No abstract text available
Text: SiHB22N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • Generation one 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V • High EAR capability 0.190 Qg max. (nC) 98 • Lower figure-of-merit Ron x Qg Qgs (nC)
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Original
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SiHB22N60S
O-263)
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SiHG22N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • Generation one 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V • High EAR capability 0.190 Qg max. (nC) 98 • Lower figure-of-merit Ron x Qg Qgs (nC)
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Original
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SiHG22N60S
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SiHP22N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • Generation one 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V • High EAR capability 0.190 Qg max. (nC) 98 • Lower figure-of-merit Ron x Qg Qgs (nC)
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Original
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SiHP22N60S
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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