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    MARKING S3 AMPLIFIER Search Results

    MARKING S3 AMPLIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CLC412A/B2A Rochester Electronics LLC CLC412 - Op Amp - Dual marked (5962-9471901M2A) Visit Rochester Electronics LLC Buy
    UA733M/BCA Rochester Electronics LLC UA733 - Differential Video Amplifier - Dual marked (8418501CA) Visit Rochester Electronics LLC Buy
    UA733M/BIA Rochester Electronics LLC UA733 - Differential Video Amplifier - Dual marked (8418501IA) Visit Rochester Electronics LLC Buy
    CLC425A/BPA Rochester Electronics LLC CLC425 - Op Amp, Wideband, Low-Noise - Dual marked (5962-9325901MPA) Visit Rochester Electronics LLC Buy
    LM747A/BCA Rochester Electronics LM747 - OP AMP, GENERAL PURPOSE, DUAL - Dual marked (M38510/10102BCA) Visit Rochester Electronics Buy

    MARKING S3 AMPLIFIER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    G2997BP71U

    Abstract: No abstract text available
    Text: G2997B Global Mixed-mode Technology DDR Termination Regulator Features General Description ̈ The G2997B is a 2A sink/source tracking termination regulator. It is specifically designed for low-cost/ low-external component count systems. The G2997B maintains a high speed operational amplifier that provides fast load transient response and only requires


    Original     		PDF G2997B G2997B MSOP-10 G2997BP71U

    WDFN-10L

    Abstract: RT9026PFP RT9026 RT9026FP RT9026SP RT9026PQW S5 MARKING s3 86c DFN 3x3 PACKAGE MSOP-10
    Text: RT9026 DDR Termination Regulator General Description Features RT9026 is a 3A sink/source tracking termination regulator. It is specifically designed for low-cost and low-external component count systems. The RT9026 possesses a high speed operating amplifier that provides fast load transient


    Original     		PDF RT9026 RT9026 DS9026-04 WDFN-10L RT9026PFP RT9026FP RT9026SP RT9026PQW S5 MARKING s3 86c DFN 3x3 PACKAGE MSOP-10

    RT9026

    Abstract: DS9026-03 s3 86c RT9026PFP MSOP-10 SSTL-18 86C marking RT9026FP DFN 3x3 PACKAGE
    Text: RT9026 DDR Termination Regulator General Description Features RT9026 is a 3A sink/source tracking termination regulator. It is specifically designed for low-cost and low-external component count systems. The RT9026 possesses a high speed operating amplifier that provides fast load transient


    Original     		PDF RT9026 RT9026 Pad137, DS9026-03 s3 86c RT9026PFP MSOP-10 SSTL-18 86C marking RT9026FP DFN 3x3 PACKAGE

    45128 ifm

    Abstract: ifm 45128 Essen PTB 2035 X ifm 45128 45128 45128 essen atex 2035 ifm D 45128 marking S3 amplifier IFM Electronic GmBH n0032A
    Text: Evaluation systems N0032A NV1221/115VAC/RL/1D/1G Switching amplifier for Namur sensors according to 94/9/EG ATEX ATEX approval Group II, category (1) G D 2-channel Relay outputs Programmable output function Short-circuit and wire monitoring 1: LED 2: selector switch


    Original     		PDF N0032A NV1221/115VAC/RL/1D/1G 94/9/EG TC16048 N0032A 45128 ifm ifm 45128 Essen PTB 2035 X ifm 45128 45128 45128 essen atex 2035 ifm D 45128 marking S3 amplifier IFM Electronic GmBH n0032A

    RT9026SP

    Abstract: RT9026PFP RT9026FP RT9026PQW RT9026PSP RT9026GQW RT9026GFP s3 86c RT9026GSP RICHTEK
    Text: RT9026 DDR Termination Regulator General Description Features RT9026 is a 3A sink/source tracking termination regulator. It is specifically designed for low-cost and low-external component count systems. The RT9026 possesses a high speed operating amplifier that provides fast load transient


    Original     		PDF RT9026 RT9026 DS9026-06 RT9026SP RT9026PFP RT9026FP RT9026PQW RT9026PSP RT9026GQW RT9026GFP s3 86c RT9026GSP RICHTEK

    Untitled

    Abstract: No abstract text available
    Text: Photoelectrics Amplifier Type S142C. • • • • • • • µ-Processor controlled Amplifier relay for photoelectric switches Automatic or manual emitter power regulation Multiplex system, master/slave 20 ms cycle Self-diagnostic functions Alignment help


    Original     		PDF S142C. 11-pin ZPD11

    s142

    Abstract: marking S1 amplifier ZPD11 XNONE marking S3 amplifier UL325 02A250
    Text: Photoelectrics Amplifier Type S142C. • • • • • • • µ-Processor controlled Amplifier relay for photoelectric switches Automatic or manual emitter power regulation Multiplex system, master/slave 20 ms cycle Self-diagnostic functions Alignment help


    Original     		PDF S142C. 11-pin ZPD11 s142 marking S1 amplifier ZPD11 XNONE marking S3 amplifier UL325 02A250

    RF AMPLIFIER marking S3

    Abstract: No abstract text available
    Text: SNA-386 Product Description DC-3 GHz, Cascadable GaAs MMIC Amplifier Sirenza Microdevices’ SNA-386 is a GaAs monolithic broadband amplifier MMIC housed in a low-cost surfacemountable plastic package. At 1950 MHz. this amplifier provides 20dB of gain when biased at 35mA.


    Original     		PDF SNA-386 SNA-386 SNA-300) SNA-386-TR1 SNA-386-TR2 SNA-386-TR3 EDS-102434 RF AMPLIFIER marking S3

    SIRENZA MARKING

    Abstract: mmic marking S3
    Text: SNA-386 Product Description DC-3 GHz, Cascadable GaAs MMIC Amplifier Sirenza Microdevices’ SNA-386 is a GaAs monolithic broadband amplifier MMIC housed in a low-cost surfacemountable plastic package. At 1950 MHz. this amplifier provides 20dB of gain when biased at 35mA.


    Original     		PDF SNA-386 SNA-300) SNA-386 23dBm SNA-386-TR1 SNA-386-TR2 SNA-386-TR3 EDS-102434 SIRENZA MARKING mmic marking S3

    mmic s3

    Abstract: RF AMPLIFIER marking S3 marking S3 amplifier SNA-300 SNA-386 SNA-386-TR1 SNA-386-TR2 SNA-386-TR3 386 amplifier Sirenza Microdevices, Inc
    Text: SNA-386 Product Description DC-3 GHz, Cascadable GaAs MMIC Amplifier Sirenza Microdevices’ SNA-386 is a GaAs monolithic broadband amplifier MMIC housed in a low-cost surfacemountable plastic package. At 1950 MHz. this amplifier provides 20dB of gain when biased at 35mA.


    Original     		PDF SNA-386 SNA-386 SNA-300) SNA-386-TR3 SNA-386-TR2 SNA-386-TR1 EDS-102434 mmic s3 RF AMPLIFIER marking S3 marking S3 amplifier SNA-300 SNA-386-TR1 SNA-386-TR2 SNA-386-TR3 386 amplifier Sirenza Microdevices, Inc

    G2997F51U

    Abstract: No abstract text available
    Text: G2997 Global Mixed-mode Technology DDR Termination Regulator Features „ „ „ „ „ „ „ „ „ „ „ „ „ General Description Support DDR I 1.25VTT , DDR II (0.9 VTT), DDR III (0.75 VTT), and DDR IIIL (0.675VTT) Requirements Input Voltage Range: 3V to 5.5V


    Original     		PDF G2997 25VTT) 675VTT) MSOP-10 TDFN3X3-10 G2997 G2997F51U

    capacitor marking c106

    Abstract: NFM18Ps105 TL217 NFM18PS105R0J3 TL222 PTFA220081M Transistor tl217 TRANSISTOR SMD w2 c105 TRANSISTOR c103 TRANSISTOR DATA
    Text: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200


    Original     		PDF PTFA220081M PTFA220081M capacitor marking c106 NFM18Ps105 TL217 NFM18PS105R0J3 TL222 Transistor tl217 TRANSISTOR SMD w2 c105 TRANSISTOR c103 TRANSISTOR DATA

    SMD r801

    Abstract: TL217 TL218 TL2082 TRANSISTOR c801 c803 R804 3224W-202ECT-ND transistor c803 TL223
    Text: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain,


    Original     		PDF PTFA220041M PTFA220041M SMD r801 TL217 TL218 TL2082 TRANSISTOR c801 c803 R804 3224W-202ECT-ND transistor c803 TL223

    102433

    Abstract: SNA-300 SNA-376 SNA-376-TR1 SNA-376-TR2 Sirenza Microdevices, Inc
    Text: SNA-376 Product Description Sirenza Microdevices’ SNA-376 is a GaAs monolithic broadband amplifier MMIC housed in a low-cost surface mountable stripline package. This amplifier provides 22dB of gain when biased at 35mA. External DC decoupling capacitors determine low frequency


    Original     		PDF SNA-376 SNA-376 SNA-300) SNA-376-TR3 SNA-376-TR2 SNA-376-TR1 EDS-102433 102433 SNA-300 SNA-376-TR1 SNA-376-TR2 Sirenza Microdevices, Inc

    c102 TRANSISTOR

    Abstract: tl113 c103 TRANSISTOR TRANSISTOR c104 NFM18PS105R0J3 c103 TRANSISTOR equivalent c104 TRANSISTOR PTFA220041M TL108 tl111
    Text: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency


    Original     		PDF PTFA220041M PTFA220041M c102 TRANSISTOR tl113 c103 TRANSISTOR TRANSISTOR c104 NFM18PS105R0J3 c103 TRANSISTOR equivalent c104 TRANSISTOR TL108 tl111

    c102 TRANSISTOR

    Abstract: c103 TRANSISTOR c106 TRANSISTOR TRANSISTOR c105 TRANSISTOR c104 c103 m TRANSISTOR p 4712 NFM18PS105R0J3 c105 TRANSISTOR tl113
    Text: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200


    Original     		PDF PTFA220081M PTFA220081M PG-SON-10 c102 TRANSISTOR c103 TRANSISTOR c106 TRANSISTOR TRANSISTOR c105 TRANSISTOR c104 c103 m TRANSISTOR p 4712 NFM18PS105R0J3 c105 TRANSISTOR tl113

    TRANSISTOR C802

    Abstract: TL2262 c102 TRANSISTOR C102 M transistor atc100a c103 m TRANSISTOR c103 TRANSISTOR ATC100A100JW150X smd transistor bd 37 TRANSISTOR c104
    Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS


    Original     		PDF PTFA220121M PTFA220121M 12-watt PG-SON-10 TRANSISTOR C802 TL2262 c102 TRANSISTOR C102 M transistor atc100a c103 m TRANSISTOR c103 TRANSISTOR ATC100A100JW150X smd transistor bd 37 TRANSISTOR c104

    HN3B01F

    Abstract: No abstract text available
    Text: TOSHIBA TOSHIBA TRANSISTOR HN3B01F SILICON NPN EPITAXIAL TYPE PCT PROCESS SILICON PNP EPITAXIAL TYPE (PCT PROCESS) H N3B01F U nit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. +0.2 2 .8 -0 .3 +0.2 Ql: • High Voltage and High C urrent : V ç;e O - 50V, 1(2 —150mA (Max.)


    OCR Scan     		PDF HN3B01F N3B01F 150mA HN3B01F

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA MT3S07T TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S07T Unit in mm VHF—UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • 1.2 ±0.05 0.8 ± 0.05 Low Noise Figure : NF = 1.5 dB V C E = 3V, IC = 5mA, f = 2 GHz High Gain : |S2le|2 = 9-5 dB


    OCR Scan     		PDF MT3S07T S21el2

    TRANSISTOR MARKING TE US6

    Abstract: 125H HN1B01FU
    Text: T O S H IB A TOSHIBA TRANSISTOR HN1B01FU SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) H N 1 B 01 FU Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. 2 . 1± 0.1 Q1 : • High Voltage and High Current : VCEO = —50V, I q = —150mA (Max.)


    OCR Scan     		PDF HN1B01FU 150mA TRANSISTOR MARKING TE US6 125H HN1B01FU

    Untitled

    Abstract: No abstract text available
    Text: 2SK1771 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N-CHANNEL MOS TYPE K K 1 7 7 1 « r am. • m m m FM TUNER, VHF RF AMPLIFIER APPLICATIONS. Unit in mm + 0.2 2.9 - 0.3 • Superior Inter Modulation Performance. • Low Noise Figure. : NF = 1.0dB Typ.


    OCR Scan     		PDF 2SK1771

    MMBA813S4

    Abstract: No abstract text available
    Text: MOTOROLA SC iDIOD ES/ OPTO} 6367255 MOTOROLA 34 SC Ï F | b 3 b ? a S S □03fl57ti D 34C DIODES/OPTO 38276 T~z,n~tf SOT23 (continued) MMBA813S2,3,4 d e v ic e no . SMALL-SIGNAL PNP TRANSISTOR TOP VIEW C | • Designed for audio amplifier and driver applications.


    OCR Scan     		PDF 03fl57ti MMBA813S2 MMBA813S3 MMBA813S4

    MMBA813S3

    Abstract: motorola opto MMBA813S2 MMBA813S4
    Text: 34 MOTOROLA SC i D I O D E S / O P T O 6367255 MOTOROLA SC Î F |t . 3 b ? a S S 003fl27t. 0 34C DIO DES/O PTO 38276 T - Z 'T - t f SOT23 (continued) MMBA813S2,3,4 d e v ic e no . SMALL-SIGNAL PNP TRANSISTOR TOP VIEW C | • Designed for audio amplifier and driver applications.


    OCR Scan     		PDF 3b75SS 03flS7t, MMBA813S2 MMBA813S3 MMBA813S4 motorola opto

    FMMT918

    Abstract: marking of m7 diodes transistor EH sot-23 A12 marking sot-23 MARKING CODE G1 3B sot23 marking m6 marking transistor sot-23 ferranti marking code CB sot23 transistor marking code 7E SOT-23
    Text: FERRANTI * semiconductors FMMT918 NPN Silicon Planar V H F /U H F Transistor DESCRIPTION This device is intended for low noise, high frequency amplifier and oscillator applications. Encapsulated in the popular SOT-23 package the device is designed specifically for use in thin and thick film hybrid


    OCR Scan     		PDF FMMT918 OT-23 FMMT-A13 FMMT-A14 BCW67A FMMT-A20 BCW67B FMMT-A42 BCW67C FMMT918 marking of m7 diodes transistor EH sot-23 A12 marking sot-23 MARKING CODE G1 3B sot23 marking m6 marking transistor sot-23 ferranti marking code CB sot23 transistor marking code 7E SOT-23