igbt 300V 70A
Abstract: IRGS4086PBF AN-994
Text: PD - 96222 IRGB4086PbF IRGS4086PbF PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery Circuits in PDP Applications TM l Low VCE on) and Energy per Pulse (EPULSE for Improved Panel Efficiency l High Repetitive Peak Current Capability
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IRGB4086PbF
IRGS4086PbF
O-220AB
IRGB4086PbF
EIA-418.
igbt 300V 70A
IRGS4086PBF
AN-994
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PDF
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DG3535
Abstract: No abstract text available
Text: DG3535/DG3536 Vishay Siliconix New Product 0.25-W Low-Voltage Dual SPDT Analog Switch FEATURES D D D D D BENEFITS Low Voltage Operation Low On-Resistance - rON: 0.25 W @ 2.7 V −69 dB OIRR @ 2.7 V, 100 kHz MICRO FOOTr Package ESD Protection >2000 V D D D
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DG3535/DG3536
DG3535/DG3536
S-40863--Rev.
17-May-04
DG3535
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PDF
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MARKING S408
Abstract: marking s14 RMKMS508 S408 S508 S914 marking s16
Text: RMKMS Vishay Sfernice Molded, 50 Mil Pitch, Dual-In-Line Resistor Networks FEATURES • Tight TCR tracking down to 5 ppm/°C • Monolithic reliability • Low noise < - 35 dB Actual Size The RMKM series of small outline surface mount style molded package can accommodate resistor network to your
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08-Apr-05
MARKING S408
marking s14
RMKMS508
S408
S508
S914
marking s16
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PDF
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Si2319DS
Abstract: Si2319DS-T1 C9 MARKING
Text: Si2319DS Vishay Siliconix P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −40 40 D TrenchFETr Power MOSFET rDS(on) (W) ID (A)b 0.082 @ VGS = −10 V −3.0 0.130 @ VGS = −4.5 V −2.4 APPLICATIONS D Load Switch TO-236 (SOT-23) G 1 S 2 3 D
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Original
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Si2319DS
O-236
OT-23)
Si2319DS-T1
Si2319DS-T1--E3
S-40844--Rev.
03-May-04
C9 MARKING
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PDF
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Si1330EDL
Abstract: No abstract text available
Text: Si1330EDL New Product Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D ESD Protected: 2000 V PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 2.5 @ VGS = 10 V 0.25 3 @ VGS = 4.5 V 0.23 8 @ VGS = 3 V 0.05 APPLICATIONS D P-Channel Driver
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Si1330EDL
OT-323
SC-70
Si1330EDL-T1
S-40853--Rev.
03-May-04
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PDF
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smd marking s14
Abstract: smd code s408 S14 SMD smd s408 S408 MARKING S408 Smd code S08 smd diode marking s16 marking S16 marking s14
Text: RMKMS CNM Vishay Sfernice SMD, Molded, 50 Mil Pitch, Dual-In-Line Resistor Networks FEATURES • • • • • • Actual Size The RMKM series of small outline surface mount style molded package can accommodate resistor network to your particular application requirements in compact circuit
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Original
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18-Jul-08
smd marking s14
smd code s408
S14 SMD
smd s408
S408
MARKING S408
Smd code S08
smd diode marking s16
marking S16
marking s14
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PDF
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smd marking s14
Abstract: smd s408 S14 SMD MARKING S408
Text: RMKMS CNM Vishay Sfernice SMD, Molded, 50 Mil Pitch, Dual-In-Line Resistor Networks FEATURES • • • • • Actual Size The RMKM series of small outline surface mount style molded package can accommodate resistor network to your particular application requirements in compact circuit
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Original
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18-Jul-08
smd marking s14
smd s408
S14 SMD
MARKING S408
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PDF
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S408
Abstract: MARKING S408 S508 S914 marking S16 CS08C
Text: RMKMS CNM Vishay Sfernice Molded, 50 Mil Pitch, Dual-In-Line Resistor Networks FEATURES • Tight TCR tracking down to 5 ppm/°C • Monolithic reliability • Low noise < - 35 dB Actual Size The RMKM series of small outline surface mount style molded package can accommodate resistor network to your
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Original
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18-Jul-08
S408
MARKING S408
S508
S914
marking S16
CS08C
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PDF
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Untitled
Abstract: No abstract text available
Text: Si8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) 20 rS1S2(on) (W) IS1S2 (A) 0.045 @ VGS = 4.5 V 5.0 0.048 @ VGS = 3.7 V 4.8 0.057 @ VGS = 2.5 V 4.4 0.072 @ VGS = 1.8 V 3.9 TrenchFETr Power MOSFET
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Si8902EDB
8902E
8902E
63Sn/37Pb
S-40861--Rev.
03-May-04
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PDF
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SI8901EDB
Abstract: No abstract text available
Text: Si8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) rS1S2(on) (W) IS1S2 (A) 0.060 @ VGS = −4.5 V −4.4 −20 0.080 @ VGS = −2.5 V −3.9 0.105 @ VGS = −1.8 V −3.4 TrenchFETr Power MOSFET
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Si8901EDB
8901E
8901E
Si8901EDB-T2Note
63Sn/37Pb
S-40852--Rev.
03-May-04
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PDF
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Si1330EDL
Abstract: No abstract text available
Text: Si1330EDL New Product Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D ESD Protected: 2000 V PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 2.5 @ VGS = 10 V 0.25 3 @ VGS = 4.5 V 0.23 8 @ VGS = 3 V 0.05 APPLICATIONS D P-Channel Driver
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Original
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Si1330EDL
OT-323
SC-70
Si1330EDL-T1
08-Apr-05
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PDF
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Si2319DS
Abstract: Si2319DS-T1
Text: Si2319DS Vishay Siliconix P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −40 40 D TrenchFETr Power MOSFET rDS(on) (W) ID (A)b 0.082 @ VGS = −10 V −3.0 0.130 @ VGS = −4.5 V −2.4 APPLICATIONS D Load Switch TO-236 (SOT-23) G 1 S 2 3 D
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Si2319DS
O-236
OT-23)
Si2319DS-T1
Si2319DS-T1--E3
08-Apr-05
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PDF
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40851
Abstract: 8413 J-STD-020A Si8413DB
Text: Si8413DB New Product Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.048 @ VGS = −4.5 V −6.5 0.063 @ VGS = −2.5 V −5.7 D TrenchFETr Power MOSFET D New MICRO FOOTr Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and
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Si8413DB
Si8413DB-T1--E3
S-40851--Rev.
03-May-04
40851
8413
J-STD-020A
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PDF
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Untitled
Abstract: No abstract text available
Text: Si2319DS Vishay Siliconix P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −40 40 D TrenchFETr Power MOSFET rDS(on) (W) ID (A)b 0.082 @ VGS = −10 V −3.0 0.130 @ VGS = −4.5 V −2.4 APPLICATIONS D Load Switch TO-236 (SOT-23) G 1 S 2 3 D
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Original
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Si2319DS
O-236
OT-23)
Si2319DS-T1
Si2319DS-T1--E3
18-Jul-08
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PDF
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S14 SMD
Abstract: 60004 8R45 smd marking s14
Text: RMKMS CNM Vishay Sfernice SMD, Molded, 50 Mil Pitch, Dual-In-Line Resistor Networks FEATURES • • • • • • Actual Size The RMKM series of small outline surface mount style molded package can accommodate resistor network to your particular application requirements in compact circuit
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J-STD-020C
11-Mar-11
S14 SMD
60004
8R45
smd marking s14
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SOT-323 31 MOSFET
Abstract: Si1330EDL VISHAY MARKING mosfet kd
Text: Si1330EDL New Product Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D ESD Protected: 2000 V PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 2.5 @ VGS = 10 V 0.25 3 @ VGS = 4.5 V 0.23 8 @ VGS = 3 V 0.05 APPLICATIONS D P-Channel Driver
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Si1330EDL
OT-323
SC-70
Si1330EDL-T1
18-Jul-08
SOT-323 31 MOSFET
VISHAY MARKING mosfet kd
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Untitled
Abstract: No abstract text available
Text: RMKMS CNM www.vishay.com Vishay Sfernice SMD Molded, 50 Mil Pitch, Dual-In-Line Thin Film Resistor Networks FEATURES • Tight TCR tracking down to 5 ppm/°C • Monolithic reliability • Low noise < - 35 dB • SMD precision networks Actual Size • SO08, SO14, SO16 cases
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J-STD-020C
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: RMKMS CNM www.vishay.com Vishay Sfernice SMD Molded, 50 Mil Pitch, Dual-In-Line Thin Film Resistor Networks FEATURES • Tight TCR tracking down to 5 ppm/°C • Monolithic reliability • Low noise < -35 dB • SMD precision networks Actual Size • SO08, SO14, SO16 cases
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Original
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J-STD-020C
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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S408
Abstract: so08
Text: RMKMS CNM www.vishay.com Vishay Sfernice SMD Molded, 50 Mil Pitch, Dual-In-Line Resistor Networks FEATURES • Tight TCR tracking down to 5 ppm/°C • Monolithic reliability • Low noise < - 35 dB • SMD precision networks • SO08, SO14, SO16 cases Actual Size
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Original
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J-STD-020C
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
S408
so08
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PDF
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smd code s408
Abstract: ESCC 4001/026 PERKINELMER FLASH TUBE trigger module perkin perkin H20-060-24 solder wire SN97AG3 ic s408 smd NTC 15D PHR0603
Text: VISHAY IN T ER T ECHN O L O G Y , INC . INTERACTIVE data book thin film products vishay sfernice vse-db0096-0711 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0096-0711
smd code s408
ESCC 4001/026
PERKINELMER FLASH TUBE
trigger module perkin
perkin
H20-060-24
solder wire SN97AG3
ic s408 smd
NTC 15D
PHR0603
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PDF
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Untitled
Abstract: No abstract text available
Text: Product is End of Life 12/2014 Si9978 Vishay Siliconix Configurable H-Bridge Driver DESCRIPTION FEATURES The Si9978 is an integrated driver for an N-Channel MOSFET H-bridge. The mode control allows operation as either a full H-bridge driver or as two independent half-bridges. The
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Si9978
Si9978
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Product is End of Life 3/2014 Si9961A Vishay Siliconix 12-V Voice Coil Motor Driver DESCRIPTION FEATURES The Si9961A is a linear actuator voice coil motor driver suitable for use in disk drive head positioning systems. The Si9961A contains all of the power and control circuitry necessary to drive the VCM that is typically found in 31/2 inch
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Si9961A
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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capacitor gto vishay
Abstract: No abstract text available
Text: Product is End of Life 12/2014 Si9961A Vishay Siliconix 12-V Voice Coil Motor Driver DESCRIPTION FEATURES The Si9961A is a linear actuator voice coil motor driver suitable for use in disk drive head positioning systems. The Si9961A contains all of the power and control circuitry necessary to drive the VCM that is typically found in 31/2 inch
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Original
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Si9961A
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
capacitor gto vishay
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PDF
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Untitled
Abstract: No abstract text available
Text: Product is End of Life 3/2014 Si786 Vishay Siliconix Dual-Output Power-Supply Controller FEATURES • • • • Fixed 5 V and 3.3 V Step-down Converters Less than 500 µA Quiescent Current per Converter 25 µA Shutdown Current 5.5 V to 30 V Operating Range
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Si786
Si786
MAX786
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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