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    MARKING SMD TRANSISTOR DR Search Results

    MARKING SMD TRANSISTOR DR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MARKING SMD TRANSISTOR DR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TRANSISTOR SMD MARKING CODE A45

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. PNP General Purpose Amplifier Transistor Surface Mount LMSB709LT1G FEATURE ƽSmall plastic SMD package. 3 ƽGeneral purpose amplification. ƽPb-Free Package is available. 2 DEVICE MARKING AND ORDERING INFORMATION 1 Device LMSB709LT1G


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    LMSB709LT1G LMSB709LT3G 3000/Tape 10000/Tape OT-23 TRANSISTOR SMD MARKING CODE A45 PDF

    04N03LA

    Abstract: 04n03l smd marking D50 IPD04N03LA IPF04N03LA IPS04N03LA IPU04N03LA P-TO251-3-1 P-TO252-3-11 smd diode marking c3
    Text: Type OptiMOS 2 Power-Transistor IPD04N03LA G IPF04N03LA G IPS04N03LA G IPU04N03LA G Product Summary Package Marking • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD version) 3.8 mΩ ID 50 A • N-channel, logic level


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    IPD04N03LA IPF04N03LA IPS04N03LA IPU04N03LA IPD04N03LA IPF04N03LA IPS04N03LA IPU04N03LA P-TO252-3-11 P-TO252-3-23 04N03LA 04n03l smd marking D50 P-TO251-3-1 P-TO252-3-11 smd diode marking c3 PDF

    BFS17

    Abstract: transistor BFs 18 BFS17R marking E1
    Text: BFS 17 / BFS 17 R TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 2 1 3 3 94 9280 BFS17 Marking: E1 Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter


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    BFS17 BFS17R D-74025 transistor BFs 18 marking E1 PDF

    smd transistor marking A3

    Abstract: smd code marking L01B transistor smd marking code c3 smd code L00B nichicon LOT date code L00B L28a smd code marking NEC rf transistor MARKING CODE L01A smd transistor M5
    Text: LP2980 Micropower 50 mA Ultra Low-Dropout Regulator In SOT-23 and micro SMD Packages General Description Features The LP2980 is a 50 mA, fixed-output voltage regulator designed specifically to meet the requirements of batterypowered applications. Using an optimized VIP Vertically Integrated PNP process, the LP2980 delivers unequaled performance in all


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    LP2980 OT-23 smd transistor marking A3 smd code marking L01B transistor smd marking code c3 smd code L00B nichicon LOT date code L00B L28a smd code marking NEC rf transistor MARKING CODE L01A smd transistor M5 PDF

    smd code marking L01B

    Abstract: smd code L00B marking code 38 SMD Transistor L02B smd NICHICON DATE CODE MARKING smd code marking NEC capacitor marking code C3 SMD Transistor smd code marking NEC rf transistor l01b l48a
    Text: LP2980 Micropower 50 mA Ultra Low-Dropout Regulator In SOT-23 and micro SMD Packages General Description Features The LP2980 is a 50 mA, fixed-output voltage regulator designed specifically to meet the requirements of batterypowered applications. Using an optimized VIP Vertically Integrated PNP process, the LP2980 delivers unequaled performance in all


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    LP2980 OT-23 LP2980 smd code marking L01B smd code L00B marking code 38 SMD Transistor L02B smd NICHICON DATE CODE MARKING smd code marking NEC capacitor marking code C3 SMD Transistor smd code marking NEC rf transistor l01b l48a PDF

    nichicon LOT date code

    Abstract: smd code L00B l26a L00B smd code marking NEC rf transistor MPS2907A SMD
    Text: LP2980 Micropower 50 mA Ultra Low-Dropout Regulator In SOT-23 and micro SMD Packages General Description Features The LP2980 is a 50 mA, fixed-output voltage regulator designed specifically to meet the requirements of battery-powered applications. Using an optimized VIP Vertically Integrated PNP process, the LP2980 delivers unequaled performance in all


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    LP2980 OT-23 nichicon LOT date code smd code L00B l26a L00B smd code marking NEC rf transistor MPS2907A SMD PDF

    L00A SOT-23

    Abstract: L25B smd code marking L01B l01b L00A l01b marking sot23-5 L21A SMD L31A L00B smd code L00B
    Text: LP2980 Micropower 50 mA Ultra Low-Dropout Regulator In SOT-23 and micro SMD Packages General Description Features The LP2980 is a 50 mA, fixed-output voltage regulator designed specifically to meet the requirements of battery-powered applications. Using an optimized VIP Vertically Integrated PNP process, the LP2980 delivers unequaled performance in all


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    LP2980 OT-23 11AN-1162: AN-1162 LMX3162 AN-1172: L00A SOT-23 L25B smd code marking L01B l01b L00A l01b marking sot23-5 L21A SMD L31A L00B smd code L00B PDF

    l01b

    Abstract: SMD sot23-5 marking E L37B L25B l48a smd code L00B L28B l00a l48b l00b marking
    Text: LP2980 Micropower 50 mA Ultra Low-Dropout Regulator In SOT-23 and micro SMD Packages General Description Features The LP2980 is a 50 mA, fixed-output voltage regulator designed specifically to meet the requirements of battery-powered applications. Using an optimized VIP Vertically Integrated PNP process, the LP2980 delivers unequaled performance in all


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    LP2980 OT-23 11AN-1162: AN-1162 LMX3162 AN-1172: l01b SMD sot23-5 marking E L37B L25B l48a smd code L00B L28B l00a l48b l00b marking PDF

    2N3904 smd

    Abstract: MARKING SMD transistor R11 transistor smd marking code c3 2N3904 TRANSISTOR SMD TRANSISTOR SMD MARKING CODE R8 TRANSISTOR SMD MARKING CODE 1K SMD MARKING CODE TRANSISTOR R5
    Text: DAEV6240.004 23 March, 2012 MAS6240 EVALUATION BOARD INTRODUCTION The MAS6240 piezo driver IC evaluation board supports the MAS6240C2 piezo driver IC in the QFN package. This device version has the input current limitation disabled. The MAS6240C1 version, having


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    DAEV6240 MAS6240 MAS6240C2 MAS6240C1 2N3904 smd MARKING SMD transistor R11 transistor smd marking code c3 2N3904 TRANSISTOR SMD TRANSISTOR SMD MARKING CODE R8 TRANSISTOR SMD MARKING CODE 1K SMD MARKING CODE TRANSISTOR R5 PDF

    smd transistor M5

    Abstract: L21A L37B L25B l00b
    Text: LP2980 Micropower 50 mA Ultra Low-Dropout Regulator General Description Features The LP2980 is a 50 mA, fixed-output voltage regulator designed specifically to meet the requirements of battery-powered applications. Using an optimized VIP Vertically Integrated PNP process, the LP2980 delivers unequaled performance in all


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    LP2980 OT-23 space49 smd transistor M5 L21A L37B L25B l00b PDF

    L31B

    Abstract: l00b smd diode marking sot23
    Text: LP2980 Micropower SOT, 50 mA Ultra Low-Dropout Regulator General Description Features The LP2980 is a 50 mA, fixed-output voltage regulator designed specifically to meet the requirements of battery-powered applications. n n n n n n n n n n n n n Using an optimized VIP Vertically Integrated PNP process, the LP2980 delivers unequaled performance in all


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    LP2980 OT-23 L31B l00b smd diode marking sot23 PDF

    smd transistor M5

    Abstract: smd m5 transistor 6-pin l48a l13a L21A
    Text: LP2980 Micropower SOT, 50 mA Ultra Low-Dropout Regulator General Description Features The LP2980 is a 50 mA, fixed-output voltage regulator designed specifically to meet the requirements of battery-powered applications. n n n n n n n n n n n n n Using an optimized VIP Vertically Integrated PNP process, the LP2980 delivers unequaled performance in all


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    LP2980 OT-23 smd transistor M5 smd m5 transistor 6-pin l48a l13a L21A PDF

    l01b regulator

    Abstract: marking L01B l48a L00B SMD L31A L21A B45196 KEMET L25B smd marking m5 LP2980
    Text: LP2980 Micropower 50 mA Ultra Low-Dropout Regulator General Description Features The LP2980 is a 50 mA, fixed-output voltage regulator designed specifically to meet the requirements of battery-powered applications. Using an optimized VIP Vertically Integrated PNP process, the LP2980 delivers unequaled performance in all


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    LP2980 LP2980 OT-23 l01b regulator marking L01B l48a L00B SMD L31A L21A B45196 KEMET L25B smd marking m5 PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type NPN Medium Power Transistor BCP56 -16 SOT-223 • Features Unit: mm +0.2 3.50-0.2 +0.2 -0.2 6.50 ● High collector current ● Low collector-emitter saturation voltage +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 ● For AF driver and output stages


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    BCP56 OT-223 PDF

    SMD transistor code NC

    Abstract: DIODE smd marking CODE WA TRANSISTOR SMD MARKING CODE transistor SMD MARKING CODE nx smd marking NX transistor smd code marking nc 2n7002 smd SMD Transistor nc TRANSISTOR SMD MARKING CODE PD smd diode 2n7002 marking code
    Text: SMD Signal DMOS Transistor N-Channel 2N7002 SMD Signal DMOS Transistor (N-Channel) Features • • • • • Voltage Controlled Small Signal Switch High Density Cell Design for Low RDS(ON) Rugged and Reliable High Saturation Current Capablity RoHS Compliance


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    2N7002 OT-23, OT-23 MIL-STD-202G, SMD transistor code NC DIODE smd marking CODE WA TRANSISTOR SMD MARKING CODE transistor SMD MARKING CODE nx smd marking NX transistor smd code marking nc 2n7002 smd SMD Transistor nc TRANSISTOR SMD MARKING CODE PD smd diode 2n7002 marking code PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type NPN General Purpose Transistor MMBTA05,MMBTA06 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 NPN silicon. 0.55 Driver transistors. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1


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    OT-23 MMBTA05 MMBTA06 PDF

    SMD TRANSISTOR MARKING KI

    Abstract: MOSFET marking smd 2SK1828
    Text: MOSFET SMD Type MOS Field Effect Transistor 2SK1828 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 2.5V Gate Drive 0.4 3 Features 1 High Speed 0.55 Low Threshold Voltage :Vth=0.5 to 1.5V 2 +0.1 0.95-0.1 +0.1 1.9-0.1 1.Base 1 GATE 2.Emitter


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    2SK1828 OT-23 SMD TRANSISTOR MARKING KI MOSFET marking smd 2SK1828 PDF

    LM393M

    Abstract: LM393 SMD lm393n voltage switch diagram LM393 SMD M08A LM393 application note LM393H smd marking lm393 pin out diagram of LM393N dual comparator LM393N LM2903ITL
    Text: LM393 - Low Power Low Offset Voltage Dual Comparator Features Typical Application *click for larger image Wide supply Voltage range: 2.0V to 36V Single or dual supplies: ±1.0V to ±18V Very low supply current drain 0.4 mA independent of supply voltage Low input biasing current:


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    LM393 AN-1112 LM193AJ/883 LM193AJ-QMLV* LM193AJ-MLS LM393N LM2903N LM393M LM393MX LM2903M LM393M LM393 SMD lm393n voltage switch diagram LM393 SMD M08A LM393 application note LM393H smd marking lm393 pin out diagram of LM393N dual comparator LM393N LM2903ITL PDF

    SMD Transistor g16

    Abstract: marking G16 marking g16 sot23 g16 sot23 smd transistor marking 26 smd transistor 26 2SK1590 5V GATE TO SOURCE VOLTAGE MOSFET
    Text: MOSFET SMD Type MOS Field Effect Transistor 2SK1590 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 impedance. 0.55 Not necessary to consider driving current because of its high input +0.1 1.3-0.1 +0.1 2.4-0.1 Directly driven by Ics having a 5V power supply. 0.4


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    2SK1590 OT-23 SMD Transistor g16 marking G16 marking g16 sot23 g16 sot23 smd transistor marking 26 smd transistor 26 2SK1590 5V GATE TO SOURCE VOLTAGE MOSFET PDF

    2SK1589

    Abstract: 5V GATE TO SOURCE VOLTAGE MOSFET
    Text: MOSFET SMD Type MOS Field Effect Transistor 2SK1589 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 impedance. 0.55 Not necessary to consider driving current because of its high input +0.1 1.3-0.1 +0.1 2.4-0.1 Directly driven by Ics having a 5V power supply.


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    2SK1589 OT-23 2SK1589 5V GATE TO SOURCE VOLTAGE MOSFET PDF

    smd transistor g19

    Abstract: 2SK1657
    Text: MOSFET SMD Type MOS Field Effect Transistor 2SK1657 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 IGSS= 5nA MAX.@VGS= 3.0V +0.1 1.3-0.1 +0.1 2.4-0.1 Has low gate leakage current 0.4 3 Directly driven by Ics having a 3V power supply. 2 +0.1 0.95-0.1


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    2SK1657 OT-23 smd transistor g19 2SK1657 PDF

    transistor MAR 819

    Abstract: transistor MAR 543 sl2 357 BFS17
    Text: Tem ic BFS17/BFS17R Sem iconductors Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features • High power gain • SMD-package BFS17 Marking: El Plastic case SOT 23 1= Collector; 2= Base: 3= Emitter BFS17R Marking: E4


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    BFS17/BFS17R BFS17 BFS17R 26-Mar-97 transistor MAR 819 transistor MAR 543 sl2 357 PDF

    Untitled

    Abstract: No abstract text available
    Text: wmmt BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features • High power gain • SMD-package 1 BFS17 Marking: E1


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    BFS17/BFS17R/BFS17W BFS17 BFS17R BFS17W 20-Jan-99 PDF

    Untitled

    Abstract: No abstract text available
    Text: • bh53131 00E3T77 STT « A P X N A PIER PHIL IPS/D ISCR ETE BST120 b7E D P-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel vertical D-MOS transistor in SOT89 envelope and intended for use in relay, high-speed and line-transformer drivers, using SMD technology.


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    bh53131 00E3T77 BST120 PDF