N3C SOT
Abstract: N-Channel Enhancement-Mode 250v to-92 74W MARKING CODE SOT23 250V 400MA TN5325 TN5325K1 TN5325N3 TN5325N8
Text: TN5325 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Product marking for SOT-23: Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(on) (min) TO-236AB* TO-92 TO-243AA* N3C❋ 250V 7.0Ω 2.0V 1.2A TN5325K1
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TN5325
OT-23:
O-236AB*
O-243AA*
TN5325K1
TN5325N3
TN5325N8
OT-23.
O-243AA
150mA
N3C SOT
N-Channel Enhancement-Mode 250v to-92
74W MARKING CODE
SOT23 250V 400MA
TN5325
TN5325K1
TN5325N3
TN5325N8
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N-Channel Enhancement-Mode 250v to-92
Abstract: 74w MARKING CODE TN5325 TN5325K1 TN5325N3 TN5325N8 SOT23 250V 400MA
Text: TN5325 TN5325 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package Product marking for SOT-23: BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(on) (min) TO-236AB* TO-92 TO-243AA* N5C❋ 250V 7.0Ω 2.0V 1.2A
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TN5325
OT-23:
O-236AB*
O-243AA*
TN5325K1
TN5325N3
TN5325N8
OT-23.
150mA
N-Channel Enhancement-Mode 250v to-92
74w MARKING CODE
TN5325
TN5325K1
TN5325N3
TN5325N8
SOT23 250V 400MA
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AS5SS256K36
Abstract: AS5SS256K36A 876-3210
Text: SSRAM AS5SS256K36 & AS5SS256K36A Austin Semiconductor, Inc. 256K x 36 SSRAM PIN ASSIGNMENT Top View Flow-Through, Synchronous Burst SRAM 100-pin TQFP (DQ) (2-chip enable version, “A” indicator) FEATURES ! ! ! ! ! ! ! ! ! ! ! OPTIONS MARKING DQ No. 1001
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AS5SS256K36
AS5SS256K36A
100-pin
AS5SS256K36
AS5SS256K36ADQ-8
AS5SS256K36A
876-3210
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diode sot-23 marking AG
Abstract: VF01 sot-23 Marking N2
Text: TN2130 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) VGS(th) (max) Order Number / Package Product marking for SOT-23: TO-236AB* N1T❋ 300V 25Ω 2.4V TN2130K1 where ❋ = 2-week alpha date code
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TN2130
O-236AB*
TN2130K1
OT-23:
OT-23.
Guides/CH06A
Table/ch06a
CH06F
TN2640N3
TN2640
diode sot-23 marking AG
VF01
sot-23 Marking N2
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SSRAM
Abstract: AS5SS256K36
Text: SSRAM AS5SS256K36 256K x 36 SSRAM PIN ASSIGNMENT Top View Flow-Through, Synchronous Burst SRAM 100-pin TQFP (DQ) FEATURES OPTIONS MARKING Timing 7.5ns/8.5ns/117MHz 8.5ns/10ns/100MHz 10ns/15ns/66MHz -7.5
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AS5SS256K36
100-pin
5ns/117MHz
5ns/10ns/100MHz
10ns/15ns/66MHz
-55oC
125oC)
-40oC
105oC)
SSRAM
AS5SS256K36
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SCP1000-D11
Abstract: SCP1000 D01 SCP1000 SCP1000-D01 TN51 2716 eeprom
Text: Doc.Nr. 8260800.08 Product Family Specification SCP1000 Series Absolute pressure sensor SCP1000-D01 SCP1000-D11 SCP1000 Series Note: Reader is advised to notice that this Product Family Specification applies to SCP1000 having updated signal conditioning circuitry. This version can be recognized from the D01 or D11 marking on the top of the
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SCP1000
SCP1000-D01
SCP1000-D11
SCP1000-D11
SCP1000 D01
SCP1000-D01
TN51
2716 eeprom
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AS5SS256K36
Abstract: 43251 876-3210
Text: SSRAM Austin Semiconductor, Inc. 256K x 36 SSRAM PIN ASSIGNMENT Top View Flow-Through, Synchronous Burst SRAM FEATURES z z z z z z z z z z z OPTIONS MARKING Timing 8.5ns/10ns/100MHz 10ns/15ns/66MHz z Packages 100-pin TQFP (2-chip enable) z Pinout 3-chip Enable
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100-pin
portableS5SS256K36
AS5SS256K36
-40oC
85oC1
-55oC
125oC
AS5SS256K36
43251
876-3210
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SCP1000-D11
Abstract: SCP1000 D01 SCP1000-D01 MEMS pressure sensor mems ultrasonic sensors micro machined ultrasonic sensors MICRO USA Pressure Sensor SCP1000 smd transistor device marking p18 SMD transistor Marking rw
Text: Doc.Nr. 8260800.06 Product Family Specification SCP1000 Series Absolute pressure sensor SCP1000-D01 SCP1000-D11 SCP1000 Series Note: Reader is advised to notice that this Product Family Specification applies to SCP1000 version which is equipped with the first release of signal conditioning circuitry. It can be recognized from the P01 or P03 marking
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SCP1000
SCP1000-D01
SCP1000-D11
SCP1000
SCP1000-D11
SCP1000 D01
SCP1000-D01
MEMS pressure sensor
mems ultrasonic sensors
micro machined ultrasonic sensors
MICRO USA Pressure Sensor
smd transistor device marking p18
SMD transistor Marking rw
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Untitled
Abstract: No abstract text available
Text: SSRAM Austin Semiconductor, Inc. 256K x 36 SSRAM PIN ASSIGNMENT Top View Flow-Through, Synchronous Burst SRAM 100-pin TQFP (DQ) (2-chip enable version, “A” indicator) FEATURES z z z z z z z z z z z OPTIONS MARKING DQ No. 1001 100-pin TQFP (DQ) (3-chip enable version, no indicator)
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AS5SS256K36
AS5SS256K36A
100-lead
AS5SS256K36ADQ-8
AS5SS256K36
-40oC
85oC1
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AS5SS256K36
Abstract: AS5SS256K36A 876-3210
Text: SSRAM Austin Semiconductor, Inc. 256K x 36 SSRAM PIN ASSIGNMENT Top View Flow-Through, Synchronous Burst SRAM 100-pin TQFP (DQ) (2-chip enable version, “A” indicator) FEATURES z z z z z z z z z z z OPTIONS MARKING DQ No. 1001 100-pin TQFP (DQ) (3-chip enable version, no indicator)
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100-pin
AS5SS256K36
AS5SS256K36A
AS5SS256K36ADQ-8
-40oC
85oC1
-55oC
125oC
AS5SS256K36
AS5SS256K36A
876-3210
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Untitled
Abstract: No abstract text available
Text: SSRAM AS5SS256K36 & AS5SS256K36A Austin Semiconductor, Inc. 256K x 36 SSRAM PIN ASSIGNMENT Top View Synchronous Burst SRAM FEATURES l l l l l l l l l l l OPTIONS MARKING l -8.5 -10 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56
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AS5SS256K36
AS5SS256K36A
100-lead
AS5SS256K36ADQ-8
AS5SS256K36
-40oC
-55oC
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123456789
Abstract: 12345
Text: SSRAM AS5SS256K36 & AS5SS256K36A Austin Semiconductor, Inc. 256K x 36 SSRAM PIN ASSIGNMENT Top View Synchronous Burst SRAM FEATURES l l l l l l l l l l l OPTIONS MARKING l -8.5 -10 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56
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AS5SS256K36
AS5SS256K36A
100-lead
AS5SS256K36ADQ-8
AS5SS256K36
-40oC
-55oC
123456789
12345
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Untitled
Abstract: No abstract text available
Text: SSRAM AS5SS256K36 256K x 36 SSRAM PIN ASSIGNMENT Top View Flow-Through, Synchronous Burst SRAM FEATURES z z z z z z z z z z z OPTIONS z z MARKING -8.5* -10 DQ 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 80 79 78 77 76
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AS5SS256K36
100-pin
100-lea
AS5SS256K36
-40oC
85oC1
-55oC
125oC
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Untitled
Abstract: No abstract text available
Text: SSRAM AS5SS256K36 256K x 36 SSRAM PIN ASSIGNMENT Top View Flow-Through, Synchronous Burst SRAM FEATURES z z z z z z z z z z z OPTIONS z z MARKING -8.5* -10 DQ 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 80 79 78 77 76
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AS5SS256K36
100-pin
100-lea
AS5SS256K36
-40oC
85oC1
-55oC
125oC
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MARKING MY
Abstract: fairchild top marking diode marking 226 J05Z TN5320A fairchild amplifier fairchild marking FAIRCHILD TN5320A-J05Z
Text: Product Folder - Fairchild P/N TN5320A - PNP High Voltage Amplifier Advanced Search Google Search PRODUCTS MARKETS & APPLICATIONS SUPPORT COMPANY INVESTORS MY FAIRCHILD PRODUCTS MARKETS & APPLICATIONS SUPPORT COMPANY INVESTORS MY FAIRCHILD Related Links TN5320A
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TN5320A
TN5320A
com/pf/TN/TN5320A
html09/05/2005
MARKING MY
fairchild top marking
diode marking 226
J05Z
fairchild amplifier
fairchild marking
FAIRCHILD
TN5320A-J05Z
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TN5335
Abstract: TN5335K1 TN5335N8 TN5335NW
Text: TN5335 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) TO-236AB TO-243AA* Wafer 350V 15Ω 2.0V 750mA TN5335K1 TN5335N8 TN5335NW * Same as SOT-89.
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TN5335
O-236AB
O-243AA*
750mA
TN5335K1
TN5335N8
TN5335NW
OT-89.
OT-23
O-243AA
TN5335
TN5335K1
TN5335N8
TN5335NW
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marking N8 sot-23
Abstract: mos fet marking k1
Text: TN5335 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This
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TN5335
O-236,
TN5335
O-243AA
OT-89)
O-243,
DSFP-TN5335
A020508
marking N8 sot-23
mos fet marking k1
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sot 23 x 316
Abstract: transistor N3 SOT N3 marking code sot 89 mos fet marking k1
Text: TN5325 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This
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TN5325
TN5325
O-243AA
OT-89)
O-243,
DSFP-TN5325
A020508
sot 23 x 316
transistor N3 SOT
N3 marking code sot 89
mos fet marking k1
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marking N8 sot-23
Abstract: No abstract text available
Text: TN5335 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This
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TN5335
DSFP-TN5335
A050108
marking N8 sot-23
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sot-89 MARKING CODE ab
Abstract: FET SOT-89 fet sot-89 marking code fet sot-89 product marking TN5335 TN5335K1-G TN5335N8-G FET SOT-89 N-Channel
Text: TN5335 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This
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TN5335
DSFP-TN5335
A091408
sot-89 MARKING CODE ab
FET SOT-89
fet sot-89 marking code
fet sot-89 product marking
TN5335
TN5335K1-G
TN5335N8-G
FET SOT-89 N-Channel
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Untitled
Abstract: No abstract text available
Text: Supertex inc. TN5335 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage Complementary N- and P-channel devices
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TN5335
DSFP-TN5335
A080712
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Untitled
Abstract: No abstract text available
Text: Supertex inc. TN5335 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► ►► General Description Low threshold High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown
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TN5335
DSFP-TN5335
B081213
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Untitled
Abstract: No abstract text available
Text: TN5325 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold 2.0V max. High input impedance and high gain Free from secondary breakdown Low CISS and fast switching speeds This low threshold, enhancement-mode (normally-off)
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TN5325
DSFP-TN5325
A052009
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY MT58LC128K16C6 128K X 16 SYNCBURST SRAM l^ ic n o N 128K X 16 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, PIPELINED AND SELECTABLE BURST COUNTER FEATURES • • • • • • • • OPTIONS MARKING • Timing 12ns clock cycle 83 MHz 13ns clock cycle (75 MHz)
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MT58LC128K16C6
100-pin
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