J05Z
Abstract: TO-92 Package Dimensions fairchild TO-226-AE
Text: TO-92 Package Dimensions TO-92; TO-5 Standard Lead Form J05Z Option (FS PKG Code 92, 94, 96) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.22 ; Note: Option available for TO-226AE package; Call factory for details.
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O-226AE
J05Z
TO-92 Package Dimensions
fairchild
TO-226-AE
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J05Z
Abstract: No abstract text available
Text: TO-92; TO-5 Standard Lead Form J05Z Option (FS PKG Code 92, 94, 96) Package Information TO-92 Tape and Reel Data and Package Dimensions, continued 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.22
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O-226AE
J05Z
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MPSA65
Abstract: CBVK741B019 F63TNR MMBTA65 MPSA64 PN2222N PZTA65 bel 188 transistor
Text: MMBTA65 PZTA65 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2W PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*
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MMBTA65
PZTA65
OT-23
OT-223
MPSA64
OT-223
MPSA65
CBVK741B019
F63TNR
MMBTA65
PN2222N
PZTA65
bel 188 transistor
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transistor 2N5461
Abstract: No abstract text available
Text: MMBF5460 MMBF5461 2N5460 2N5461 2N5462 G D G S TO-92 SOT-23 S Mark: 6E / 61U D P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 89.
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2N5460
2N5461
2N5462
MMBF5460
MMBF5461
2N5462
transistor 2N5461
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2N5306
Abstract: F63TNR MPSA14 PN2222N CBVK741B019
Text: 2N5306 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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2N5306
MPSA14
2N5306
F63TNR
PN2222N
CBVK741B019
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rf transistor mark code H1
Abstract: CBVK741B019 F63TNR MMBTH24 MPSH11 MPSH24 PN2222N
Text: MPSH24 / MMBTH24 MPSH24 MMBTH24 C E C B TO-92 B SOT-23 E Mark: 3A NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 20 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for
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MPSH24
MMBTH24
MPSH24
OT-23
MPSH11
rf transistor mark code H1
CBVK741B019
F63TNR
MMBTH24
MPSH11
PN2222N
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FPN630
Abstract: FPN630A PN2222N CBVK741B019 F63TNR TO-226-AE D26Z weig S0480 226AE
Text: FPN630 / FPN630A FPN630 FPN630A C TO-226 B E PNP Low Saturation Transistor These devices are designed for high current gain and low saturation voltage with collector currents up to 3.0 A continuous. Sourced from Process PC. Absolute Maximum Ratings* Symbol
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FPN630
FPN630A
FPN630
O-226
FPN630A
PN2222N
CBVK741B019
F63TNR
TO-226-AE
D26Z
weig
S0480
226AE
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MPS A06 transistor
Abstract: MPS A06 MPSA06 "cross reference" mps 0724 marking A06 amplifier FAIRCHILD SOT-223 MARK Marking code mps
Text: MMBTA06 PZTA06 C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 1G NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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MPSA06
MMBTA06
PZTA06
MPSA06
MMBTA06
OT-23
OT-223
MPSA06RA
O-92-3
MPS A06 transistor
MPS A06
MPSA06 "cross reference"
mps 0724
marking A06 amplifier
FAIRCHILD SOT-223 MARK
Marking code mps
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Untitled
Abstract: No abstract text available
Text: PN4355 MMBT4355 C E C BE TO-92 B SOT-23 Mark: 81 PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 67. See TN4033A for characteristics. Absolute Maximum Ratings*
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PN4355
MMBT4355
PN4355
OT-23
TN4033A
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transistor j210
Abstract: 212 t sot-23
Text: G S G S TO-92 SOT-23 D Mark: 62V / 62W / 62X D NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed for HF/VHF mixer/amplifier and applications where Process 50 is not adequate. Sufficient gain and low noise for sensitive receivers. Sourced from
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MMBFJ210
MMBFJ211
MMBFJ212
OT-23
transistor j210
212 t sot-23
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25c reference top mark sot23
Abstract: sot23 A63
Text: MMBTA63 PZTA63 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2U PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*
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MPSA63
MMBTA63
PZTA63
MPSA63
MMBTA63
OT-23
OT-223
MPSA64
25c reference top mark sot23
sot23 A63
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2N5551B
Abstract: 2n5551yc sot-23 marking NE 2N5551BU 2N5551Y 2N5551YTA 5551n transistor marking code ne SOT-23 2n5551c-y 2N5551YBU
Text: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 B SOT-23 E Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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2N5551
MMBT5551
2N5551
OT-23
2N5551YIUBU
2N5551YTA
2N5551TA
2N5551CBU
2N5551IUTA
2N5551B
2n5551yc
sot-23 marking NE
2N5551BU
2N5551Y
5551n
transistor marking code ne SOT-23
2n5551c-y
2N5551YBU
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MOSFET bs170
Abstract: BS170 CBVK741B019 F63TNR MMBF170 PN2222N BS170 AN bs170 TO-92 BS170 application note
Text: April 1995 BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS ON . These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high
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BS170
MMBF170
500mA
MOSFET bs170
CBVK741B019
F63TNR
MMBF170
PN2222N
BS170 AN
bs170 TO-92
BS170 application note
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BC212L
Abstract: CBVK741B019 F63TNR PN2222N
Text: BC212L BC212L B C E TO-92 PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300mA. Sourced from Process 68. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter
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BC212L
300mA.
BC212L
CBVK741B019
F63TNR
PN2222N
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BC368
Abstract: CBVK741B019 F63TNR PN2222N
Text: BC368 BC368 B C TO-92 E NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.5 A. Sourced from Process 37. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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BC368
BC368
CBVK741B019
F63TNR
PN2222N
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BCxxx TRANSISTOR
Abstract: No abstract text available
Text: PN4249 C TO-92 BE PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 68. See PN200 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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PN4249
PN200
BCxxx TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: J174 / J175 / J176 / J177 / MMBFJ175 / 176 / 177 MMBFJ175 MMBFJ176 MMBFJ177 J174 J175 J176 J177 G S S G TO-92 D SOT-23 D Mark: 6W / 6X / 6Y NOTE: Source & Drain are interchangeable P-Channel Switch This device is designed for low level analog switching sample and hold
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MMBFJ175
MMBFJ175
MMBFJ176
MMBFJ177
OT-23
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Untitled
Abstract: No abstract text available
Text: TN6714A / NZT6714 TN6714A NZT6714 C E C C B TO-226 B SOT-223 E NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.5 A. Sourced from Process 37. Absolute Maximum Ratings*
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TN6714A
NZT6714
TN6714A
O-226
OT-223
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Untitled
Abstract: No abstract text available
Text: PN918 / MMBT918 MMBT918 PN918 C E C B TO-92 B SOT-23 E Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings*
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PN918
MMBT918
PN918
OT-23
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CBVK741B019
Abstract: F63TNR MMBTA42 MPSA42 PN2222N PZTA42
Text: MMBTA42 PZTA42 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1D NPN High Voltage Amplifier This device is designed for application as a video output to drive color CRT and other high voltage applications. Sourced from Process 48. Absolute Maximum Ratings*
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MMBTA42
PZTA42
OT-23
OT-223
CBVK741B019
F63TNR
MMBTA42
MPSA42
PN2222N
PZTA42
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MMBF4119
Abstract: PN4117 transistor 61e F63TNR MMBF4117 MMBF4118 PN2222N PN4118 PN4119 CBVK741B019
Text: MMBF4117 MMBF4118 MMBF4119 PN4117 PN4118 PN4119 G D G S TO-92 SOT-23 D S Mark: 61A / 61C / 61E N-Channel Switch This device is designed for low current DC and audio applications. These devices provide excellent performance as input stages for sub-picoamp instrumentation or any high impedance signal
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MMBF4117
MMBF4118
MMBF4119
PN4117
PN4118
PN4119
OT-23
MMBF4119
PN4117
transistor 61e
F63TNR
MMBF4117
MMBF4118
PN2222N
PN4118
PN4119
CBVK741B019
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Untitled
Abstract: No abstract text available
Text: PN4275 C TO-92 BE NPN Switching Transistor This device is designed for high speed saturated switching applications at currents to 100 mA. Sourced from Process 21. See PN2369A for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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PN4275
PN2369A
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Transistor J310
Abstract: J309 J310 J310 applications CBVK741B019 F63TNR MMBFJ309 MMBFJ310 PN2222N J310 Application Note
Text: MMBFJ309 MMBFJ310 J309 J310 G D G S TO-92 SOT-23 D S Mark: 6U / 6T N-Channel RF Amplifier This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized. Sourced from Process 92.
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MMBFJ309
MMBFJ310
OT-23
Transistor J310
J309
J310
J310 applications
CBVK741B019
F63TNR
MMBFJ309
MMBFJ310
PN2222N
J310 Application Note
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2N5486
Abstract: 2N5484 2N5485 CBVK741B019 MMBF5484 MMBF5485 MMBF5486
Text: 2N5484 / 5485 / 5486 / MMBF5484 / 5485 / 5486 MMBF5484 MMBF5485 MMBF5486 2N5484 2N5485 2N5486 G S G S TO-92 SOT-23 D D Mark: 6B / 6M / 6H NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed primarily for electronic switching
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2N5484
MMBF5484
MMBF5484
MMBF5485
MMBF5486
2N5484
2N5485
2N5486
OT-23
2N5486
2N5485
CBVK741B019
MMBF5485
MMBF5486
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