marking 81 SOT89
Abstract: ts 11783 H1 marking SOT-89 transistor
Text: 2STD1360, 2STF1360, 2STN1360 Low voltage fast-switching NPN power transistors Datasheet − production data Features • Very low collector-emitter saturation voltage ■ High current gain characteristic ■ 4 4 Fast-switching speed 1 Emergency lighting ■
|
Original
|
PDF
|
2STD1360,
2STF1360,
2STN1360
OT-223
OT-89
O-252
2STD2360T4,
2STF2360
2STN2360.
marking 81 SOT89
ts 11783
H1 marking SOT-89 transistor
|
Untitled
Abstract: No abstract text available
Text: 2STD1360, 2STF1360, 2STN1360 Low voltage fast-switching NPN power transistors Datasheet − production data Features • Very low collector-emitter saturation voltage ■ High current gain characteristic ■ 4 4 Fast-switching speed 1 Emergency lighting ■
|
Original
|
PDF
|
2STD1360,
2STF1360,
2STN1360
OT-89
OT-223
O-252
|
mjd44
Abstract: AM08852v1 MJD45H ST TAB 060
Text: MJD44H11, MJD45H11 Complementary power transistors Datasheet Features − production data . • Low collector-emitter saturation voltage ■ Fast switching speed ■ Surface-mounting TO-252 DPAK power package in tape and reel (suffix "T4") TAB2 3 1 Applications
|
Original
|
PDF
|
MJD44H11,
MJD45H11
O-252
MJD44H11
MJD45H11
mjd44
AM08852v1
MJD45H
ST TAB 060
|
st morocco tip122
Abstract: Darlington pair IC schematic morocco tip122 MJD122 MJD122-1 MJD122T4 MJD127 MJD127-1 MJD127T4 TIP122
Text: MJD122-1 / MJD122T4 MJD127-1 / MJD127T4 COMPLEMENTARY POWER DARLINGTON TRANSISTORS Ordering Code MJD122T4 MJD122-1 MJD127T4 MJD127-1 Marking MJD122 MJD122 MJD127 MJD127 Package TO-252 TO-251 TO-252 TO-251 DPAK (IPAK) (DPAK) (IPAK) Shipment Tape & Reel Tube
|
Original
|
PDF
|
MJD122-1
MJD122T4
MJD127-1
MJD127T4
MJD122-1
MJD127-1
MJD122
st morocco tip122
Darlington pair IC schematic
morocco tip122
MJD122
MJD122T4
MJD127
MJD127T4
TIP122
|
chn 935
Abstract: ST CHN t4 CHN 640 STMicroelectronics DPAK Marking CODE diode chn 940 morocco tip122 chn 940 935 CHN MJD127 CHN T4
Text: MJD122-1 / MJD122T4 MJD127-1 / MJD127T4 COMPLEMENTARY POWER DARLINGTON TRANSISTORS Ordering Code MJD122T4 MJD122-1 MJD127T4 MJD127-1 Marking MJD122 MJD122 MJD127 MJD127 Package TO-252 TO-251 TO-252 TO-251 DPAK (IPAK) (DPAK) (IPAK) Shipment Tape & Reel Tube
|
Original
|
PDF
|
MJD122-1
MJD122T4
MJD127-1
MJD127T4
MJD122-1
MJD127-1
MJD122
chn 935
ST CHN t4
CHN 640
STMicroelectronics DPAK Marking CODE
diode chn 940
morocco tip122
chn 940
935 CHN
MJD127
CHN T4
|
d1 marking code dpak transistor
Abstract: MJD32CT4
Text: MJD32C Low voltage PNP power transistor Datasheet − production data Features • ■ Surface-mounting TO-252 power package in tape and reel TAB Complementary to the NPN type MJD31C 3 Application ■ 1 General purpose linear and switching equipment DPAK TO-252
|
Original
|
PDF
|
MJD32C
O-252
MJD31C
O-252
MJD32C
MJD32CT4
d1 marking code dpak transistor
MJD32CT4
|
d1 marking code dpak transistor
Abstract: No abstract text available
Text: MJD32CT4-A Low voltage PNP power transistor Datasheet − production data Features • This device is qualified for automotive application TAB ■ Surface-mounting TO-252 power package in tape and reel ■ Complementary to the NPN type MJD31C 3 1 Application
|
Original
|
PDF
|
MJD32CT4-A
O-252
MJD31C
O-252
MJD32C
d1 marking code dpak transistor
|
Date Code Marking STMicroelectronics PACKAGE DPAK
Abstract: 13473
Text: MJD31CT4-A Low voltage NPN power transistor Datasheet − production data Features • This device is qualified for automotive application TAB ■ Surface-mounting TO-252 power package in tape and reel ■ Complementary to the PNP type MJD32C 3 1 Application
|
Original
|
PDF
|
MJD31CT4-A
O-252
MJD32C
O-252
MJD31C
Date Code Marking STMicroelectronics PACKAGE DPAK
13473
|
3543
Abstract: No abstract text available
Text: MJD31C Low voltage NPN power transistor Datasheet − production data Features • ■ Surface-mounting TO-252 power package in tape and reel TAB Complementary to the PNP type MJD32C 3 Application ■ 1 General purpose linear and switching equipment DPAK TO-252
|
Original
|
PDF
|
MJD31C
O-252
MJD32C
O-252
MJD31C
MJD31CT4
3543
|
MJD122
Abstract: ST DARLINGTON TRANSISTOR Date Code Marking STMicroelectronics PACKAGE DPAK JESD97 MJD122-1 MJD122T4 MJD127 ST T4 0
Text: MJD122 Low voltage power Darlington transistor Features • Low base drive requirements ■ Integrated antiparallel collector-emitter diode ■ Through hole TO-251 IPAK power package in tube (suffix “-1”) ■ Surface mounting TO-252 (DPAK) power package in tape & reel (suffix “T4”)
|
Original
|
PDF
|
MJD122
O-251
O-252
MJD127.
MJD122T4n
MJD122
ST DARLINGTON TRANSISTOR
Date Code Marking STMicroelectronics PACKAGE DPAK
JESD97
MJD122-1
MJD122T4
MJD127
ST T4 0
|
D878
Abstract: high gain low voltage NPN transistor marked code tc STD878T4 TO-252 high voltage fast switching npn transistor Part Marking STMicroelectronics TO252 JESD97
Text: STD878T4 HIGH CURRENT, HIGH PERFORMANCE, LOW VOLTAGE NPN TRANSISTOR Features Preliminary Data • VERY LOW COLLECTOR TO EMITTER SATUARATION VOLTAGE ■ DC CURRENT GAIN, hFE > 100 ■ 5 A CONTINUOUS COLLECTOR CURRENT ■ SURFACE-MOUNTING DPAK TO-252 ■ POWER PACKAGE IN TAPE & REEL
|
Original
|
PDF
|
STD878T4
O-252)
O-252
D878
high gain low voltage NPN transistor
marked code tc
STD878T4
TO-252
high voltage fast switching npn transistor
Part Marking STMicroelectronics
TO252
JESD97
|
STD20NF06
Abstract: No abstract text available
Text: STD20NF06 N-CHANNEL 60V - 0.032 Ω - 24A DPAK STripFET II POWER MOSFET PRELIMINARY DATA • ■ ■ ■ ■ TYPE VDSS RDS on ID STD20NF06 60 V < 0.040 Ω 24 A TYPICAL RDS(on) = 0.032 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED
|
Original
|
PDF
|
STD20NF06
O-252)
O-252
STD20NF06
|
STD20NF06L
Abstract: No abstract text available
Text: STD20NF06L N-CHANNEL 60V - 0.032 Ω - 24A DPAK STripFET II POWER MOSFET PRELIMINARY DATA TYPE STD20NF06L • ■ ■ ■ ■ VDSS RDS on ID 60 V < 0.040 Ω 24 A TYPICAL RDS(on) = 0.032 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED
|
Original
|
PDF
|
STD20NF06L
O-252)
O-252
STD20NF06L
|
D60NH
Abstract: D60NH03l STD60NH03L STD60NH03LT4 D60N
Text: STD60NH03L N-CHANNEL 30V - 0.0072 Ω - 60A DPAK STripFET III POWER MOSFET TARGET DATA TYPE STD60NH03L • ■ ■ ■ ■ ■ VDSS RDS on ID 30 V < 0.009 Ω 60 A TYPICAL RDS(on) = 0.0072 Ω @ 10 V RDS(ON) * Qg INDUSTRY’s BENCHMARK CONDUCTION LOSSES REDUCED
|
Original
|
PDF
|
STD60NH03L
O-252)
O-252
STD60NH03L
D60NH
D60NH03l
STD60NH03LT4
D60N
|
|
D40NF3LL
Abstract: STD40NF3LL STD40NF3LLT4
Text: STD40NF3LL N-CHANNEL 30V - 0.009 Ω - 40A DPAK LOW GATE CHARGE STripFET II POWER MOSFET TYPE STD40NF3LL • ■ ■ ■ ■ VDSS RDS on ID 30 V <0.011 Ω 40 A TYPICAL RDS(on) = 0.009 Ω @ 10V OPTIMAL RDS(on) x Qg TRADE-OFF CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED)
|
Original
|
PDF
|
STD40NF3LL
O-252)
O-252
D40NF3LL
STD40NF3LL
STD40NF3LLT4
|
STD70NH02LT4
Abstract: D70NH02L STD70NH02L
Text: STD70NH02L N-CHANNEL 24V - 0.0062 W - 60A DPAK STripFET III POWER MOSFET TYPE STD70NH02L • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 24 V < 0.008 W 60 A(*) TYPICAL RDS(on) = 0.0062 W @ 10 V TYPICAL RDS(on) = 0.008 W @ 5 V RDS(ON) * Qg INDUSTRY’s BENCHMARK
|
Original
|
PDF
|
STD70NH02L
O-252)
O-252
STD70NH02L
STD70NH02LT4
D70NH02L
|
Untitled
Abstract: No abstract text available
Text: STD95N4LF3 N-channel 40 V, 5.0 mΩ typ., 80 A STripFET III Power MOSFET in a DPAK package Datasheet — production data Features Type VDSS STD95N4LF3 40 V RDS on max ID PD TAB < 6.0 mΩ 80 A(1) 110 W 3 1. Value limited by wire bonding • 100% avalanche tested
|
Original
|
PDF
|
STD95N4LF3
|
d1805
Abstract: No abstract text available
Text: STD1805 LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR PRELIMINARY DATA • ■ ■ ■ ■ Ordering Code Marking Shipment STD1805T4 D1805 Tape & Reel STD1805-1 D1805 Tube VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE HIGH CURRENT GAIN CHARACTERISTIC
|
Original
|
PDF
|
STD1805
STD1805T4
STD1805-1
D1805
D1805
O-251)
O-252)
O-251
O-252
|
D30PF
Abstract: STD30PF03LT4 STD30PF30L STD30PF03L-1
Text: STD30PF30L P-CHANNEL 30V - 0.025 Ω - 24A IPAK/DPAK STripFET II POWER MOSFET TYPE STD30PF30L • ■ ■ ■ ■ ■ VDSS RDS on ID 30 V <0.028 Ω 24 TYPICAL RDS(on) = 0.025Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW TRESHOLD DEVICE
|
Original
|
PDF
|
STD30PF30L
O-251)
O-252)
O-251
O-252
D30PF
STD30PF03LT4
STD30PF30L
STD30PF03L-1
|
STD16NF06L
Abstract: No abstract text available
Text: STD16NF06L N-CHANNEL 60V - 0.060 Ω - 16A DPAK STripFET II POWER MOSFET Table 1: General Features TYPE STD16NF06L • ■ ■ ■ ■ Figure 1:Package VDSS RDS on ID 60 V < 0.070 Ω 16 A TYPICAL RDS(on) = 0.060 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED
|
Original
|
PDF
|
STD16NF06L
O-252)
STD16NF06L
|
D30PF
Abstract: STD30PF03LT4 STD30PF03L STD30PF03L-1
Text: STD30PF03L P-CHANNEL 30V - 0.025 Ω - 24A IPAK/DPAK STripFET II POWER MOSFET TYPE STD30PF03L • ■ ■ ■ ■ ■ VDSS RDS on ID 30 V <0.028 Ω 24 TYPICAL RDS(on) = 0.025Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW TRESHOLD DEVICE
|
Original
|
PDF
|
STD30PF03L
O-251)
O-252)
O-251
O-252
D30PF
STD30PF03LT4
STD30PF03L
STD30PF03L-1
|
STMicroelectronics DPAK Marking CODE
Abstract: BULD1101E BULD1101ET4
Text: BULD1101ET4 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR PRELIMINARY DATA • ■ ■ ■ ■ ■ Ordering Code Marking Shipment BULD1101ET4 BULD1101E Tape & Reel HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR
|
Original
|
PDF
|
BULD1101ET4
BULD1101E
O-252)
O-252
STMicroelectronics DPAK Marking CODE
BULD1101E
BULD1101ET4
|
D790A
Abstract: STD790A
Text: STD790A MEDIUM CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOR • ■ ■ ■ ■ Type Marking STD790A D790A VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE DC CURRENT GAIN, hFE > 100 3 A CONTINUOUS COLLECTOR CURRENT 60 V BREAKDOWN VOLTAGE V(BR CER)
|
Original
|
PDF
|
STD790A
D790A
O-252)
D790A
STD790A
|
d1805
Abstract: STD1805-1 STD1805 STD1805T4
Text: STD1805 LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR PRELIMINARY DATA • ■ ■ ■ ■ Ordering Code Marking Shipment STD1805T4 D1805 Tape & Reel STD1805-1 D1805 Tube VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE HIGH CURRENT GAIN CHARACTERISTIC
|
Original
|
PDF
|
STD1805
D1805
STD1805-1
STD1805T4
O-251)
O-252)
O-251
O-252
d1805
STD1805-1
STD1805
STD1805T4
|