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    MARKING TRANSISTOR 232 Search Results

    MARKING TRANSISTOR 232 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54F139/BEA Rochester Electronics LLC 54F139 - Decoder/Driver, F/FAST Series, Inverted Output, TTL, CDIP16 - Dual marked (M38510/33702BEA) Visit Rochester Electronics LLC Buy
    54F151/BEA Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) Visit Rochester Electronics LLC Buy
    54F151/BFA Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDFP16 - Dual marked (M38510/33901BFA) Visit Rochester Electronics LLC Buy
    54F157/BEA Rochester Electronics LLC Multiplexer, 2-Func, 4 Line Input, TTL, CDIP16 - Dual marked (M38510/33903BEA) Visit Rochester Electronics LLC Buy
    54F153/BEA Rochester Electronics LLC 54F153 - Multiplexer, 2-Func, 4 Line Input, TTL, CDIP16 - Dual marked (M38510/33902BEA) Visit Rochester Electronics LLC Buy

    MARKING TRANSISTOR 232 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Q62702-F1577

    Abstract: 193W
    Text: BFP 193W NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F = 1.3dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		PDF 900MHz OT-343 Q62702-F1577 Dec-12-1996 Q62702-F1577 193W

    MJE 340 transistor

    Abstract: Q62702-F1501
    Text: BFP 181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		PDF 900MHz OT-343 Q62702-F1501 Aug-30-1996 MJE 340 transistor Q62702-F1501

    IC 2272

    Abstract: Q62702-F1502
    Text: BFP 182W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fT = 8GHz F = 1.2dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		PDF 900MHz OT-343 Q62702-F1502 Dec-12-1996 IC 2272 Q62702-F1502

    Q62702-F1503

    Abstract: marking 17 sot343 ZL 58
    Text: BFP 183W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		PDF OT-343 Q62702-F1503 900MHz Dec-12-1996 Q62702-F1503 marking 17 sot343 ZL 58

    Untitled

    Abstract: No abstract text available
    Text: BFP193W NPN Silicon RF Transistor 3  For low noise, high-gain amplifiers up to 2 GHz 4  For linear broadband amplifiers  fT = 8 GHz F = 1.3 dB at 900 MHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		PDF BFP193W VPS05605 OT343

    Untitled

    Abstract: No abstract text available
    Text: BFP 193W NPN Silicon RF Transistor 3  For low noise, high-gain amplifiers up to 2 GHz 4  For linear broadband amplifiers  fT = 8 GHz F = 1.3 dB at 900 MHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		PDF VPS05605 OT-343 900MHz Oct-12-1999

    Untitled

    Abstract: No abstract text available
    Text: BFP193W NPN Silicon RF Transistor 3  For low noise, high-gain amplifiers up to 2 GHz 4  For linear broadband amplifiers  fT = 8 GHz F = 1.3 dB at 900 MHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		PDF BFP193W VPS05605 OT343

    BFP193W

    Abstract: No abstract text available
    Text: BFP193W NPN Silicon RF Transistor 3  For low noise, high-gain amplifiers up to 2 GHz 4  For linear broadband amplifiers  fT = 8 GHz F = 1.3 dB at 900 MHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		PDF BFP193W VPS05605 OT343 te900MHz Aug-09-2001 BFP193W

    Untitled

    Abstract: No abstract text available
    Text: Data Pack G Data Sheet Issued March 2000 232-4465 RS training products Video library and industrial training courses Video library The RS range of VHS video films is sold for use with UK PAL system B receivers. Strict copyright and performing conditions prevail; see the current RS Catalogue


    Original     		PDF

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    CSG3001-18A04

    Abstract: thyristor BBC thyristor aeg BBC DSDI 35 WG15013B8C WG9017 abb sami star SM18CXC805 sm13cxc174 CSG2001-18A04
    Text: REPLACEMENT TABLE FOR THE POWER SEMICONDUCTORS OF SAMI STAR FREQUENCY CONVERTERS The replacement table gives a list of those semiconductors, which can be used in SAMI STAR frequency converters. The types given for each semiconductor are interchangeable. Detail information about the mounting of the power


    Original     		PDF 400F415 460F460 500F500 630F415 730F460 800F500 570F575 630F660 870F575 1000F660 CSG3001-18A04 thyristor BBC thyristor aeg BBC DSDI 35 WG15013B8C WG9017 abb sami star SM18CXC805 sm13cxc174 CSG2001-18A04

    2d SMD PNP TRANSISTOR

    Abstract: TRANSISTOR SMD MARKING CODE 2d SMD TRANSISTOR MARKING 2D TRANSISTOR SMD CODE PACKAGE SOT23 501 TRANSISTOR SMD MARKING CODE 41 transistor SMD MARKING CODE L 33 2d SMD npn TRANSISTOR smd TRANSISTOR 2D SOT23 NPN TRANSISTOR SMD MARKING CODE 2d TRANSISTOR SMD MARKING CODE SP
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBTA92 PNP high-voltage transistor Product specification Supersedes data of 1998 Jul 21 1999 Apr 13 Philips Semiconductors Product specification PNP high-voltage transistor PMBTA92 FEATURES PINNING


    Original     		PDF M3D088 PMBTA92 PMBTA42. PMBTA92 MAM256 2d SMD PNP TRANSISTOR TRANSISTOR SMD MARKING CODE 2d SMD TRANSISTOR MARKING 2D TRANSISTOR SMD CODE PACKAGE SOT23 501 TRANSISTOR SMD MARKING CODE 41 transistor SMD MARKING CODE L 33 2d SMD npn TRANSISTOR smd TRANSISTOR 2D SOT23 NPN TRANSISTOR SMD MARKING CODE 2d TRANSISTOR SMD MARKING CODE SP

    TRANSISTOR SMD MARKING CODE DK

    Abstract: 301 marking code PNP transistor TRANSISTOR SMD CODE PACKAGE SOT23 501 smd transistor marking DK smd TRANSISTOR code marking pb sot23 transistor marking 44 sot23 339 marking code SMD transistor DK smd code sot23 TRANSISTOR SMD CODE 339 TRANSISTOR SMD MARKING CODE SP
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTA143ZT PNP resistor-equipped transistor Product specification File under Discrete Semiconductors, SC04 1997 Dec 12 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA143ZT


    Original     		PDF M3D088 PDTA143ZT PDTC143ZT. 01-May-99) TRANSISTOR SMD MARKING CODE DK 301 marking code PNP transistor TRANSISTOR SMD CODE PACKAGE SOT23 501 smd transistor marking DK smd TRANSISTOR code marking pb sot23 transistor marking 44 sot23 339 marking code SMD transistor DK smd code sot23 TRANSISTOR SMD CODE 339 TRANSISTOR SMD MARKING CODE SP

    Y parameters of transistors

    Abstract: power transistor transistors equivalents transistor equivalent table MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor 2N2219 data sheet 1721E50R MARKING 41B transistor marking pl y1 marking code transistor similar 2N2219 transistor
    Text: Philips Semiconductors RF & Microwave Power Transistors General MARKING CODES FOR RF POWER TRANSISTORS MARKING CODES FOR MICROWAVE TRANSISTORS For the purposes of matched pair applications, RF power MOS transistors are marked with a code that indicates their gate-source voltage range see Table 8 .


    Original     		PDF MC3403 2N2219 1N4148 MBC775 Y parameters of transistors power transistor transistors equivalents transistor equivalent table MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor 2N2219 data sheet 1721E50R MARKING 41B transistor marking pl y1 marking code transistor similar 2N2219 transistor

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFP 182W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fT = 8GHz F = 1.2dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code


    OCR Scan     		PDF 900MHz OT-343 BFP182W Q62702-F1502

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFP 181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • f j = 8GHz F = 1.45dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code


    OCR Scan     		PDF 900MHz Q62702-F1501 OT-343

    SIEMENS BST 68

    Abstract: SIEMENS BST 68 L
    Text: SIEMENS BFP 193W NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F = 1.3dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    OCR Scan     		PDF 900MHz Q62702-F1577 OT-343 H35b05 BFP193W fl53SbOS SIEMENS BST 68 SIEMENS BST 68 L

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFP 181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • f j = 8GHz F = 1.45dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    OCR Scan     		PDF 900MHz Q62702-F1501 OT-343

    m lc 945

    Abstract: transistor 9206 BFG590W marking code 3T3
    Text: Product specification P hilips Sem iconductors BFG590W BFG590W/X; BFG590W/XR NPN 5 GHz wideband transistor MARKING FEATURES • High power gain TYPE NUMBER • Low noise figure BFG590W T1 • High transition frequency BFG590W/X T2 • Gold metallization ensures


    OCR Scan     		PDF BFG590W BFG590W/X; BFG590W/XR BFG590W/X BFG590W/XR OT343 OT343R BFG590W m lc 945 transistor 9206 marking code 3T3

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFP183W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F= 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    OCR Scan     		PDF BFP183W Q62702-F1503 OT-343 fiE35bQ5 900MHz c15mA fl535b05

    MARKING ra

    Abstract: LT 612 1054 transistor DAG marking dag transistor MAR 819 ci 7436 7334 marking MAR 601 transistor
    Text: Temic BFQ81 Semiconductors Silicon NPN Planer RF Transistor Applications RF amplifier up to 2 GHz, especially for mobile telephone. Features • Small feedback capacitance • L ow n o ise figure • Low cross modulation Marking: RA Plastic case SOT 23 1 = Collector; 2 = Base; 3 = Emitter


    OCR Scan     		PDF BFQ81 21-Mar-97 MARKING ra LT 612 1054 transistor DAG marking dag transistor MAR 819 ci 7436 7334 marking MAR 601 transistor

    2SD1664

    Abstract: Marking TRANSISTOR 232
    Text: 2SD1664 Transistor, NPN Features Dimensions U n its : mm • available in MPT3 (MPT, SC-62) package • package marking: 2SD1664; DA-*, where ★ is hFE code • PC = 2 W when mounted on a 40 x 40 x 0.7 mm ceramic substrate • low collector saturation voltage,


    OCR Scan     		PDF 2SD1664 SC-62) 2SD1664; 2SB1132 2SD1664 Marking TRANSISTOR 232

    AMI siemens

    Abstract: No abstract text available
    Text: SIEMENS BSP 295 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0 . 8 . . . 2 .0 V V) Type h 1.8 A BSP 295 50 V Type BSP 295 Ordering Code Q67000-S066 ^DS(on) Package Marking 0.3 n SOT-223 BSP 295 Tape and Reel Information


    OCR Scan     		PDF OT-223 Q67000-S066 E6327 AMI siemens

    2SD1664

    Abstract: marking 2sd1664
    Text: 2SD1664 Transistor, NPN Features Dimensions Units : mm 2SD1664 (MPT3) 4j .e5 -+0 0 .'2 1 u> i.e ± o . i R I r-fl rm : i ! ! ! ! ! in csi Tl (1) J Œ I î M 1.0 ±0.3 available in MPT3 (MPT, SC-62) package package marking: 2SD1664; DA*, where ★ is hFE code


    OCR Scan     		PDF 2SD1664 SC-62) 2SD1664; 500mA/50 2SB1132 2SD1664 marking 2sd1664