MTI120WX55GD
Abstract: s4 35 diode marking code
Text: GMM 3x160-0055X2 Three phase full Bridge VDSS = 55 V = 150 A ID25 RDSon typ. = 2.2 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings
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3x160-0055X2
3x160-0055X2
MTI120WX55GD
s4 35 diode marking code
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MTI90WX75GD
Abstract: DIODE marking VU smd diode code g6 vu marking code SMD MARKING DIODE VU
Text: GMM 3x120-0075X2 Three phase full Bridge VDSS = 75 V = 110 A ID25 RDSon typ. = 4.0 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings
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3x120-0075X2
3x120-0075X2
MTI90WX75GD
DIODE marking VU
smd diode code g6
vu marking code
SMD MARKING DIODE VU
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Untitled
Abstract: No abstract text available
Text: DAP236K Diode, array, band switching, surface mount This small surface mount package contains two diodes in parallel. It is suitable for high density surface mounting on a printed circuit board. Dimensions Units : mm 2.9+0 2 Features 0 .8 : 0 . 1 • available in SMD3 (SMD, SC-59,
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DAP236K
SC-59,
OT-23)
DAP236K
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marking t6 VARIABLE CAPACITANCE DIODE
Abstract: 1SV211
Text: SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE 1SV211 CATV TUNING. • • • High Capacitance Ratio : C2V / C25V = 12.5 Typ. Excellent C - V Characteristics, and Small Tracking Error. Useful for Small Size Tuner. MAXIMUM RATINGS (Ta = 25°C)
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1SV211
C2V/C25V
marking t6 VARIABLE CAPACITANCE DIODE
1SV211
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MARKING 3D
Abstract: No abstract text available
Text: RB715F Diode, Schottky barrier, surface mount These mold-type diodes are suitable for high density surface mounting on printed circuit boards. Each envelope contains two diodes with a common cathode. Dimensions Units : mm 2 010.2 1.3+0.1 r Features • •
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RB715F
SC-70,
OT-323)
RB715F
MARKING 3D
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Untitled
Abstract: No abstract text available
Text: Single Diode DE10P3 Schottky Barrier Diode mtm OUTLINE U n itlm m Package : E-pack Weight 0.326g Typ H 30 V 1 0A i 1 3 Feature • SMD • SMD • Ultra-Low Vf=0.4V • High lo Rating -Small-PKG •Î2® V f=0.4V l'utYi kj Type No. s Main Use • A ' ì / t U —Ì Ì S K l t
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DE10P3
specifiDE10P3
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SMD D3A
Abstract: No abstract text available
Text: RB400D Diode, Schottky barrier, surface mount These mold-type diodes are suitable for high density surface mounting on printed circuit boards. Dimensions Units : mm 2 .9+0 2 19+ 0 2 Features 1.1+; 0.95 0 95 • available in SMD3 (SMD, SC-59) package (similar to SOT-23)
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RB400D
SC-59)
OT-23)
RB400D
SMD D3A
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4503ss
Abstract: marking D3G d3g marking 3504C hm marking
Text: Diode, Schottky barrier, surface mount RB471E These mold-type diodes are suitable for high density surface mounting on printed circuit boards. Each envelope contains two diodes. Dimensions Units : mm I ~ U0.- ‘I 'I •1 1,9 ± 0.2 |o.35 0 . 8 ± 0.1 0 .9 5j
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RB471E
SC-59)
RB471E
4503ss
marking D3G
d3g marking
3504C
hm marking
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1sr156-400
Abstract: DIODE marking VU pmds
Text: 1SR156-400 Diode, rectifying, surface mount These molded-type diodes are suitable for high density surface mounting on printed circuit boards. Dimensions Units : mm 1.5 + 0.2 Features • available in PMDS (PSM) package • part marking, 24XX Applications
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1SR156-400
1SR156-400
DIODE marking VU pmds
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Diode Marking ef
Abstract: Diode type SMD marking PJ smd marking pj marking smd NU pj SMD diode smd diode pj D2FS4 smd Pj 75 pj 71 diode
Text: Schottky Barrier Diode wnnw OUTLINE Single Diode D2FS4 Unit-mm Package I 2F Weight 0.16g Typ ay-K -y-? / Cathode mark 40V 1,6A Feature • /JvffiSMD • Small SMD • P rrsm T K ^ V S / i & S I • Prrsm Rating •w.f.ns»? Type No. Main Use • D C /D C u y / K - 9
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J53Z-1)
Diode Marking ef
Diode type SMD marking PJ
smd marking pj
marking smd NU
pj SMD diode
smd diode pj
D2FS4
smd Pj 75
pj 71 diode
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SG30SC6M
Abstract: J533 diode marking aj
Text: Schottky Barrier Diode Twin Diode mmm SG30SC6M Package 60V 30A o u tlin e ' FTO-220G Unit • mm Weight 1.54g Typ p v U!»;«K> 4.5 Feature • Ti=150lC • Tj=150°C • Î ê S Ü l Œ 2 k V ÎSIŒ • Full Molded • High lo Rating-Small-RKG • Dielectric Strength 2kV
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SG30SC6M
FTO-220G
SG30SC6M
J533-1
J533
diode marking aj
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S20LC30
Abstract: No abstract text available
Text: Super Fast Recovery Diode Twin Diode M im S20LC30 O U T L IN E Unit ! mm Package : M TO -3P W eight 6.1g T yp 300V 20A : Feature •g y -rx • trr=30ns • 9 jc ö V J \£ U • Low Noise • trr=30ns • Small 8 jc • ® fl • Switching Regulator • Home Appliance, Office Automation
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S20LC30
S20LC30
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RB435
Abstract: RB435C
Text: RB435C Diode, Schottky barrier, surface mount These mold-type diodes are suitable for high density surface mounting on printed circuit boards. Each envelope contains two diodes with common cathodes. Dimensions Units : mm « t + 0-2 4*5 o.i 1.6±0.1 Features
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RB435C
RB435C
100/a
RB435
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode mwm DF40PC3 o u t lin e 30V 40A Feature • SMD • SMD • ÎS <6V f =0.4V • Ultra-Low Vf=0.4V • High lo Rating'Small-PKG Main Use • Reverse connect protection for DC power source • D C tti^ O R Œ • D C /D C o y <-•$>
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DF40PC3
50Ilz
J532-1)
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode mwm o u t lin e Package ! E-pack DE10PC3 U nitt mm W eight 0 2 6 « (T yp r " iMi 30 V 10A Feature • SM D • SM D • ÎS < 6 V f = 0 .4 V • U ltra-Low V f= 0 .4 V Type No. Main Use • Reverse connect protection for
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DE10PC3
50IIz
J532-1)
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4vtc
Abstract: smd marking WMM diode smd marking jy smd marking AA marking WMM SMD DIODE JY marking smd JST 05 smd marking jy smd jst smd regulator marking AJ
Text: Super Fast Recovery Diode mtmm o u t l i n e Single Diode DE3L20U Unit! mm Package : E-pack Weight 0.326k Typ N 200V 3A Feature • SMD • SM D • e y -fx • Low Noise • trr=35ns • tr r-3 5 n s Type No. f Vv If 1 -2 V 31 — 99 J J _ — 01 Main Use
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DE3L20U
trr-35ns
50HzX
J532-U
4vtc
smd marking WMM
diode smd marking jy
smd marking AA
marking WMM
SMD DIODE JY
marking smd JST 05
smd marking jy
smd jst
smd regulator marking AJ
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Untitled
Abstract: No abstract text available
Text: ERB83-006 2a : Outline Drawings SCHOTTKY BARRIER DIODE : Features : Marking Low VF • X -f y ^ ^ f c r - K ^ t t l c a v . ' * 7 - 3 - K Hi Color code : Super high speed switching. High reliability by planer design. A bridg ed typ e name S E ? 5 7. : Applications
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ERB83-006
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Untitled
Abstract: No abstract text available
Text: Diode, switching, leadless RLS-92 These diodes are suitable for high density surface mounting on printed circuit boards. They have a very high switching speed. The reverse recovery time (trr is less than 2 ns.) Dimensions (Units : mm) CATHODE BAND 0 .4 0 .4
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RLS-92
LL-34)
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marking code TY SMD
Abstract: SMD MARKING CODE vk smd diode code TY smd code marking vk SMD MARKING XL jj smd smd schottky diode s3 MARKING SMD xl smd diode marking code JJ smd marking code fj
Text: Schottky Barrier Diode Single Diode w nnw OUTLINE Package : 2F D3FJ10 U nit I mm Weight 0.16# T yp Feature • • /J v g a s M D • S m all S M D • I r = 0.4mA • L o w lR=0.4m A 3FJ C a th o d e m a r k 100V 3A OÛ y—CO , G)°— 5 M — °(D
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D3FJ10
tt50HzX-ffl56LTt>
J532-1
marking code TY SMD
SMD MARKING CODE vk
smd diode code TY
smd code marking vk
SMD MARKING XL
jj smd
smd schottky diode s3
MARKING SMD xl
smd diode marking code JJ
smd marking code fj
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Untitled
Abstract: No abstract text available
Text: Super Fast Recovery Diode mtm OUTLINE Single Diode DE3L40 Unit-mm Package : E-pack Weight 0.326g Typ 400V 3A Feature • SMD • SMD • ß y -rx • trr=5Qns • trr=50ns • Low Noise Main Use • Switching Regulator >DC/DC n y tK — S • DC/DC Converter
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DE3L40
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Untitled
Abstract: No abstract text available
Text: Super Fast Recovery Diode Diode Module mtm D200LC40B OUTLINE 400V 200A Feature •*a a u m • H igh lo R ating • trr=150ns • trr= 150ns • Isolation ty p e Main Use • S e m ic o n d u c to r P roce ss M a c h in e • H igh p o w e r source • FA
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D200LC40B
150ns
J533-1)
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diode SMD MARKING CODE JV
Abstract: smd diode marking code SM smd marking KH
Text: Super Fast Recovery Diode mtm OUTLINE Single D iode M1FL20U Package I M1F 200V 1.1 A -fty -K v -? ÇWi— Cathode mai' Feature • /JvPSMD U n it-m m W eight 0 .0 2 7 g T y p £ |L 6 W • Small SMD • ß y -rx • Low Noise • trr=35ns • trr=35ns
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M1FL20U
20jUm
diode SMD MARKING CODE JV
smd diode marking code SM
smd marking KH
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2KV DIODE
Abstract: trr-25ns SF20LC30 SF20LC30SM FTO-220A J533
Text: Super Fast Recovery Diode Twin Diode Wtm OUTLINE SF20LC30SM 300V 20A Feature •i&y't'X • Low Noise • trr=25ns • trr=25ns • 77JIÆ— JU K • Full Molded • IÊ 8 IÎE E 2kV SIŒ • Dielectric Strength 2kV Main Use X'i • WM* OA • Switching Regulator
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SF20LC30SM
FTO-220A
SF20LC30SM
waveli50Hz
2KV DIODE
trr-25ns
SF20LC30
J533
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J532
Abstract: WTT device marking marking BTJ
Text: Schottky Barrier Diode mtmm Single Diode M1FJ4 40V1.5A o u t l in e io V - P v - ? Cathode mark CD Feature l • /J v g y S M D - Small SMD > Tj=150°C 1Tj=150°C 1Low lR=0.05mA 1Resistance for thermal run-away • < S lR = 0 .0 5 m A :u ic < n Unit-mm Weight 0.027g Typ
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150lC
50IIz
J532
WTT device marking
marking BTJ
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