MARKING Y1 TRANSISTOR Search Results

MARKING Y1 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
54F139/BEA	Rochester Electronics LLC	54F139 - Decoder/Driver, F/FAST Series, Inverted Output, TTL, CDIP16 - Dual marked (M38510/33702BEA)
54F151/BEA	Rochester Electronics LLC	54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA)
54F151/BFA	Rochester Electronics LLC	54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDFP16 - Dual marked (M38510/33901BFA)
54F157/BEA	Rochester Electronics LLC	Multiplexer, 2-Func, 4 Line Input, TTL, CDIP16 - Dual marked (M38510/33903BEA)
54F153/BEA	Rochester Electronics LLC	54F153 - Multiplexer, 2-Func, 4 Line Input, TTL, CDIP16 - Dual marked (M38510/33902BEA)

MARKING Y1 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
ss8050 sot-323 Abstract: SS8050 Y1 ss8050 TRANSISTOR SS8050 SS8050 equivalent ss8550 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SS8050 TRANSISTOR NPN SOT-323 FEATURES Complimentary to SS8550 1. BASE 2. EMITTER MARKING: Y1 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol	Original	OT-323 SS8050 OT-323 SS8550 ss8050 sot-323 SS8050 Y1 ss8050 TRANSISTOR SS8050 SS8050 equivalent ss8550	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SS8050 TRANSISTOR NPN SOT-323 FEATURES Complimentary to SS8550 1. BASE 2. EMITTER MARKING: Y1 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol	Original	OT-323 SS8050 OT-323 SS8550	PDF
ss8050 sot-23 Abstract: SS8050 sot-23 Y1 ss8550 sot-23 SS8050 Y1 SOT-23 SS8050 Y1 SS8050 equivalent SS8050 sot-23 equivalent ss8550 Y1 marking transistor sot23 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SS8050 SOT-23 TRANSISTOR NPN 1. BASE FEATURES Complimentary to SS8550 2. EMITTER 3. COLLECTOR MARKING: Y1 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter	Original	OT-23 SS8050 OT-23 SS8550 ss8050 sot-23 SS8050 sot-23 Y1 ss8550 sot-23 SS8050 Y1 SOT-23 SS8050 Y1 SS8050 equivalent SS8050 sot-23 equivalent ss8550 Y1 marking transistor sot23	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SS8050 SOT-23 TRANSISTOR NPN 1. BASE FEATURES Complimentary to SS8550 2. EMITTER 3. COLLECTOR MARKING: Y1 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter	Original	OT-23 SS8050 OT-23 SS8550 100mA 800mA 800mA, 30MHz	PDF
PXT8050 Abstract: Y1 SOT-89 marking y1 marking y1 sot-89 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 PXT8050 Plastic-Encapsulate Transistors SOT-89 TRANSISTOR NPN FEATURES z Compliment to PXT8550 1. BASE MARKING: Y1 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value	Original	OT-89 PXT8050 PXT8550 100mA 800mA 800mA, 30MHz PXT8050 Y1 SOT-89 marking y1 marking y1 sot-89	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SS8050 SOT-23 TRANSISTOR NPN 1. BASE FEATURES Complimentary to SS8550 2. EMITTER 3. COLLECTOR MARKING: Y1 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter	Original	OT-23 SS8050 OT-23 SS8550 100mA 800mA 800mA, 30MHz	PDF
ss8050 sot-23 Abstract: SS8050 sot-23 Y1 Y1 SOT-23 SS8050 Y1 ss8050 Y1 TRANSISTOR MARKING SOT23 5 marking y1 sot-23 transistor marking y1 ss8550 sot-23 y1 sot23 Text: SS8050 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complimentary to SS8550 MARKING: Y1 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage	Original	OT-23 SS8050 OT-23 SS8550 800mA 800mA, 30MHz 100mA ss8050 sot-23 SS8050 sot-23 Y1 Y1 SOT-23 SS8050 Y1 ss8050 Y1 TRANSISTOR MARKING SOT23 5 marking y1 sot-23 transistor marking y1 ss8550 sot-23 y1 sot23	PDF
Y1 SOT-89 Abstract: PXT8050 Marking y1 marking Y1 transistor marking y1 sot-89 transistor marking y1 y1 sot89 PXT8050 Y1 Text: PXT8050 SOT-89 Transistor NPN 1. BASE 2. COLLECTOR SOT-89 3. EMITTER Features 4.6 4.4 1.8 1.4 1.6 1.4 B Compliment to PXT8550 2.6 4.25 2.4 3.75 MARKING: Y1 0.8 MIN 0.44 0.37 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units	Original	PXT8050 OT-89 OT-89 PXT8550 800mA 800mA, 30MHz 100uA, 100mA Y1 SOT-89 PXT8050 Marking y1 marking Y1 transistor marking y1 sot-89 transistor marking y1 y1 sot89 PXT8050 Y1	PDF
fl6l5201 Abstract: No abstract text available Text: FL6L5201 Tentative Total pages page FL6L5201 Silicon P-channel MOS FET FET Silicon epitaxial planar type (SBD) For switching circuits Marking Symbol : Y1 Package Code : WSSMini6-F1 Internal Connection 6 5 4 1 2 3 Absolute Maximum Ratings Ta = 25 °C Parameter	Original	FL6L5201 fl6l5201	PDF
FET MARKING CODE Abstract: FL6L5201 Text: FL6L5201 Tentative Total pages page FL6L5201 Silicon P-channel MOS FET FET Silicon epitaxial planar type (SBD) For switching circuits Marking Symbol : Y1 Package Code : WSSMini6-F1 Internal Connection 6 5 4 1 2 3 Absolute Maximum Ratings Ta = 25 °C Parameter	Original	FL6L5201 FET MARKING CODE FL6L5201	PDF
Untitled Abstract: No abstract text available Text: Doc No. TT4-EA-12746 Revision. 2 Product Standards MOS FET FL6L52010L FL6L52010L Silicon P-channel MOSFET FET Silicon epitaxial planar type(SBD) Unit : mm 1.6 For switching For DC-DC Converter 0.2 0.13 6 5 4 1 2 3 • Features  Marking Symbol : Y1 1.4	Original	TT4-EA-12746 FL6L52010L UL-94	PDF
2N60 transistor Abstract: all transistor 2N60 transistor 2n60 02N60 2N60 MOSFET MARK y2 y1 marking code transistor 2n60 application 2n60 MOSFEt marking code diode 648 Text: HI-SINCERITY Spec. No. : MOS200403 Issued Date : 2004.07.01 Revised Date : 2005.07.14 Page No. : 1/6 MICROELECTRONICS CORP. H02N60 Series H02N60 Series Pin Assignment 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab N-Channel Power Field Effect Transistor	Original	MOS200403 H02N60 O-252 200oC 183oC 217oC 260oC 245oC H02N60I, 2N60 transistor all transistor 2N60 transistor 2n60 02N60 2N60 MOSFET MARK y2 y1 marking code transistor 2n60 application 2n60 MOSFEt marking code diode 648	PDF
MOSFET MARK y2 Abstract: H01N60I MOSFET MARK H1 H01N60 H01N60J TL 434 mosfet sn60 Text: HI-SINCERITY Spec. No. : MOS200502 Issued Date : 2005.03.01 Revised Date : 2005.09.28 Page No. : 1/5 MICROELECTRONICS CORP. H01N60 Series H01N60 Series Pin Assignment N-Channel Power Field Effect Transistor Tab Description 1 This high voltage MOSFET uses an advanced termination scheme to	Original	MOS200502 H01N60 200oC 183oC 217oC 260oC 245oC H01N60I, H01N60J MOSFET MARK y2 H01N60I MOSFET MARK H1 H01N60J TL 434 mosfet sn60	PDF
MOSFET MARK y2 Abstract: MOSFET MARK H1 marking code k1 H01N60S marking A1 TRANSISTOR marking y1 mosfet k 61 y1 mosfet y1 PB40 H01N60SI Text: HI-SINCERITY Spec. No. : MOS200501 Issued Date : 2005.01.01 Revised Date : 2006.08.31 Page No. : 1/5 MICROELECTRONICS CORP. H01N60S Series N-Channel Power Field Effect Transistor H01N60S Series Pin Assignment Tab Description 1 This high voltage MOSFET uses an advanced termination scheme to	Original	MOS200501 H01N60S 200oC 183oC 217oC 260oC 245oC 10sec MOSFET MARK y2 MOSFET MARK H1 marking code k1 marking A1 TRANSISTOR marking y1 mosfet k 61 y1 mosfet y1 PB40 H01N60SI	PDF

MOSFET MARK y2 Abstract: mosfet k 61 y1 mosfet y1 MOSFET MARK H1 marking code k1 marking y1 H01N60I marking A1 TRANSISTOR PB40 H01N60 Text: HI-SINCERITY Spec. No. : MOS200502 Issued Date : 2005.03.01 Revised Date : 2006.08.31 Page No. : 1/5 MICROELECTRONICS CORP. H01N60 Series H01N60 Series Pin Assignment N-Channel Power Field Effect Transistor Tab Description 1 This high voltage MOSFET uses an advanced termination scheme to	Original	MOS200502 H01N60 200oC 183oC 217oC 260oC 245oC 10sec MOSFET MARK y2 mosfet k 61 y1 mosfet y1 MOSFET MARK H1 marking code k1 marking y1 H01N60I marking A1 TRANSISTOR PB40	PDF
MOSFET MARK y2 Abstract: H01N60S H01N60SI H01N60SJ MOSFET MARK H1 mosfet y1 Text: HI-SINCERITY Spec. No. : MOS200501 Issued Date : 2005.01.01 Revised Date : 2005.09.28 Page No. : 1/5 MICROELECTRONICS CORP. H01N60S Series N-Channel Power Field Effect Transistor H01N60S Series Pin Assignment Tab Description 1 This high voltage MOSFET uses an advanced termination scheme to	Original	MOS200501 H01N60S 200oC 183oC 217oC 260oC 245oC H01N60SI, H01N60SJ MOSFET MARK y2 H01N60SI H01N60SJ MOSFET MARK H1 mosfet y1	PDF
MOSFET MARK y2 Abstract: transistor mark code t1 01N60 y1 marking code transistor MOSFET MARK H1 marking code n60 mosfet y1 transistor mark code H1 H01N60S H01N60SI Text: HI-SINCERITY Spec. No. : MOS200501 Issued Date : 2005.01.01 Revised Date : 2010.11.10 Page No. : 1/6 MICROELECTRONICS CORP. H01N60S Series H01N60S Series Pin Assignment 3-Lead Plastic TO-92 Package Code: A Pin 1: Gate Pin 2: Drain Pin 3: Source N-Channel Power Field Effect Transistor	Original	MOS200501 H01N60S 183oC 217oC 260oC 245oC 10sec H01N60SI, MOSFET MARK y2 transistor mark code t1 01N60 y1 marking code transistor MOSFET MARK H1 marking code n60 mosfet y1 transistor mark code H1 H01N60SI	PDF
marking code k1 Abstract: marking A1 TRANSISTOR marking y1 HI122 Text: HI-SINCERITY Spec. No. : HI200102 Issued Date : 1998.07.01 Revised Date : 2005.07.13 Page No. : 1/3 MICROELECTRONICS CORP. HI122 NPN EPITAXIAL PLANAR TRANSISTOR Description TO-251 The HI122 is designed of general purpose and low speed switching applications.	Original	HI200102 HI122 O-251 HI122 183oC 217oC 260oC marking code k1 marking A1 TRANSISTOR marking y1	PDF
A1 marking code amplifier Abstract: marking A1 TRANSISTOR HJ669A Y2MARKING Text: HI-SINCERITY Spec. No. : HE6830 Issued Date : 1994.01.25 Revised Date : 2004.09.23 Page No. : 1/3 MICROELECTRONICS CORP. HJ669A NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ669A is designed for low frequency power amplifier. TO-252 Absolute Maximum Ratings TA=25°C	Original	HE6830 HJ669A HJ669A O-252 183oC 217oC 260oC A1 marking code amplifier marking A1 TRANSISTOR Y2MARKING	PDF
marking code k1 Abstract: marking A1 TRANSISTOR HI127 Text: HI-SINCERITY Spec. No. : HE9017 Issued Date : 1996.04.12 Revised Date : 2005.07.13 Page No. : 1/3 MICROELECTRONICS CORP. HI127 PNP EPITAXIAL PLANAR TRANSISTOR Description TO-251 • High DC current gain • Bult-in a damper diode at E-C Darlington Schematic	Original	HE9017 HI127 O-251 183oC 217oC 260oC marking code k1 marking A1 TRANSISTOR HI127	PDF
marking A1 TRANSISTOR Abstract: HJ667A Y2 MARKING a5 marking Text: HI-SINCERITY Spec. No. : HE6830 Issued Date : 1994.01.25 Revised Date : 2005.07.14 Page No. : 1/3 MICROELECTRONICS CORP. HJ667A PNP EPITAXIAL PLANAR TRANSISTOR Description The HJ667A is designed for low frequency power amplifier. TO-252 Absolute Maximum Ratings TA=25°C	Original	HE6830 HJ667A HJ667A O-252 183oC 217oC 260oC marking A1 TRANSISTOR Y2 MARKING a5 marking	PDF
marking code k1 Abstract: A1 marking code amplifier marking A1 TRANSISTOR HI350 transistor mark code H1 Text: HI-SINCERITY Spec. No. : HE9008 Issued Date : 1996.04.12 Revised Date : 2005.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HI350 PNP EPITAXIAL PLANAR TRANSISTOR Description The HI350 is designed for line operated audio output amplifier, switch mode power supply drivers and other switching applications.	Original	HE9008 HI350 HI350 O-251 183oC 217oC 260oC marking code k1 A1 marking code amplifier marking A1 TRANSISTOR transistor mark code H1	PDF
transistor mark code H1 Abstract: A1 marking code amplifier HI649A y2 marking marking Y1 transistor Text: HI-SINCERITY Spec. No. : HE9003 Issued Date : 1998.01.25 Revised Date : 2005.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HI649A PNP EPITAXIAL PLANAR TRANSISTOR Description The HI649A is designed for low frequency power amplifier. TO-251 Absolute Maximum Ratings TA=25°C	Original	HE9003 HI649A HI649A O-251 183oC 217oC 260oC transistor mark code H1 A1 marking code amplifier y2 marking marking Y1 transistor	PDF
TRANSISTOR 404 Abstract: marking Y1 transistor y1 transistor Text: Transistor, dual, PNP and NPN U M Y 1 N F M Y 1 A Features • • • Dimensions Units : mm available in UMT5 (UM5) and SMT5 (FMT, SC-74A) packages package marking: UMY1N and FMY1A; Y1 package contains an NPN (2SC2412K) and a PNP (2SA1037AK) transistor with common	OCR Scan	SC-74A) 2SC2412K) 2SA1037AK) TRANSISTOR 404 marking Y1 transistor y1 transistor	PDF

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MARKING Y1 TRANSISTOR Search Results

MARKING Y1 TRANSISTOR Result Highlights (5)

MARKING Y1 TRANSISTOR Datasheets Context Search

ss8050 sot-323

Untitled

ss8050 sot-23

Untitled

PXT8050

Untitled

ss8050 sot-23

Y1 SOT-89

fl6l5201

FET MARKING CODE

Untitled

2N60 transistor

MOSFET MARK y2

MOSFET MARK y2

MOSFET MARK y2

MOSFET MARK y2

MOSFET MARK y2

marking code k1

A1 marking code amplifier

marking code k1

marking A1 TRANSISTOR

marking code k1

transistor mark code H1

TRANSISTOR 404