diode marking code YF
Abstract: diode marking YF diode 30 YF marking code YF diode marking YF marking code 024 sod Diode yf rectifying a sine wave marking bp 30 yf
Text: SD0103WS SILICON SCHOTTKY BARRIER DIODE Features • Low forward voltage drop and suitable for high effifiency rectifying • Ultra small resin package is suitable for high density surface mounting and high speed assembly PINNING DESCRIPTION PIN 1 Cathode
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SD0103WS
OD-323
OD-323
diode marking code YF
diode marking YF
diode 30 YF
marking code YF diode
marking YF
marking code 024 sod
Diode yf
rectifying a sine wave
marking bp
30 yf
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diode marking code YF
Abstract: diode 30 YF diode marking YF marking code YF diode marking YF diode marking code YF 30
Text: SD0103WS SILICON SCHOTTKY BARRIER DIODE Features • Low forward voltage drop and suitable for high effifiency rectifying • Ultra small resin package is suitable for high density surface mounting and high speed assembly PINNING DESCRIPTION PIN 1 Cathode
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SD0103WS
OD-323
OD-323
diode marking code YF
diode 30 YF
diode marking YF
marking code YF diode
marking YF
diode marking code YF 30
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yh 4100
Abstract: diode marking YG MARKING ZX sot-23 YC sot 23 CZMK22V Zx SOT-23 yl 1060 CZMK13V MARKING YG SOT-23 MARKING YG SOT23
Text: RECTRON CZMK Series SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 DUAL ZENER DIODE Common Cathode SOT- 23 Absolute Maximun Ratings (Ta=25oC) Symbol Value Unit Power Dissipation at Tamb = 25 °C P tot 300 mW Junction Temperature Storage Temperature Tj Ts Zener Current see Table ""Chara.""
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OT-23
CZMK10V
CZMK11V
CZMK12V
CZMK13V
CZMK15V
CZMK16V
CZMK18V
CZMK20V
CZMK22V
yh 4100
diode marking YG
MARKING ZX sot-23
YC sot 23
CZMK22V
Zx SOT-23
yl 1060
CZMK13V
MARKING YG SOT-23
MARKING YG SOT23
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marking 4F
Abstract: 4FV diode DIODE 3FV 60 3fv 60 9p marking
Text: SEMICONDUCTOR KDZ2.0FV~36FV TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. CATHODE MARK C D FEATURES ・Small Package : TFSC ・Sharp Breakdown Characteristic. B A E MAXIMUM RATING Ta=25℃
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15W ZENER DIODES
Abstract: XD 105 94V-0 colour code zener
Text: 1.5W ZENER DIODES SMZJ SERIES • LOW ZENER IMPEDANCE AND LOW REGULATION FACTOR • UL 94V-0 PLASTIC PACKAGE ACCEPTS HIGH TEMP. SOLDERING: 250˚C FOR 10s AT TERMINALS SMZJ SERIES Max. ratings and characteristics @ 25˚C unless specified PM Av : 1.5W @ 75˚C
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SMZJ3789B
SMZJ3790B
SMZJ3791B
SMZJ3792B
SMZJ3793B
SMZJ3794B
SMZJ3809B
178mm
330mm
15W ZENER DIODES
XD 105 94V-0
colour code zener
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diode marking code YF
Abstract: bzx84c MARKING CODE YA BZX84C56 diode marking sew diode marking YF marking code YF diode marking YF xf 375 marking code YK
Text: BZX84C…SEW Series SILICON PLANAR ZENER DIODES 3 1 2 1. Anode 3. Cathode Absolute Maximum Ratings Ta = 25 C O Parameter Symbol Value Unit PD 200 mW Tj ,TS - 55 to + 150 Power Dissipation Operating Junction and Storage Temperature Range C O Electrical Characteristics ( Ta = 25 OC unless otherwise noted, VF < 0.9 V at IF = 10 mA)
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BZX84C.
BZX84C2V4SEW
BZX84C2V7SEW
BZX84C3V0SEW
BZX84C47SEW
BZX84C51SEW
BZX84C56SEW
BZX84C62SEW
BZX84C68SEW
BZX84C75SEW
diode marking code YF
bzx84c
MARKING CODE YA
BZX84C56
diode marking sew
diode marking YF
marking code YF diode
marking YF
xf 375
marking code YK
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4FV diode
Abstract: 3fv 60 2FV 60 diode diode 3FV 60 mark 2fv diode kdz2.0fv KDZ9.1FV diode zener 3FV 36FV 4FV 60 on
Text: SEMICONDUCTOR KDZ2.0FV~36FV TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. CATHODE MARK FEATURES Small Package : TFSC C D Sharp Breakdown Characteristic. B DIM A B C D E F A
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KDZ36FV
KDZ33FV
KDZ30FV
KDZ18FV
KDZ20FV
KDZ22FV
KDZ24FV
KDZ27FV
4FV diode
3fv 60
2FV 60 diode
diode 3FV 60
mark 2fv diode
kdz2.0fv
KDZ9.1FV
diode zener 3FV
36FV
4FV 60 on
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smd code Yj 33
Abstract: smd code marking yc 440 TZT3V6CW tzt9v1 TZT22CW TZT33AW zener smd marking d47 d82 smd smd marking YK smd marking YB
Text: SMD Zener Diodes Three Terminals - 300mW 300mW Part No. TZT3V9AW TZT4V3AW TZT4V7AW TZT5V1AW TZT5V6AW TZT6V2AW TZT6V8AW TZT7V5AW TZT8V2AW TZT9V1AW TZT10AW TZT11AW TZT12AW TZT13AW TZT15AW TZT16AW TZT18AW TZT20AW TZT22AW TZT24AW TZT27AW TZT30AW TZT33AW TZT36AW
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300mW
TZT10AW
TZT11AW
TZT12AW
TZT13AW
TZT15AW
TZT16AW
TZT18AW
TZT20AW
smd code Yj 33
smd code marking yc 440
TZT3V6CW
tzt9v1
TZT22CW
TZT33AW
zener smd marking d47
d82 smd
smd marking YK
smd marking YB
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Untitled
Abstract: No abstract text available
Text: DF2S8.2CT ESD Protection Diodes Silicon Epitaxial Planar DF2S8.2CT 1. Applications • ESD Protection Note: This product is designed for protection against electrostatic discharge ESD and is not intended for any other purpose, including, but not limited to, voltage regulation.
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IEC61000-4-2)
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marking YF diode
Abstract: Toshiba 77 DIODE
Text: DF2S8.2CT TOSHIBA Diodes for Protecting against ESD DF2S8.2CT Unit in mm Product for Use Only as Protection against Electrostatic Discharge ESD . CATHODE MARK *This product is for protection against electrostatic discharge (ESD) only and is not intended for any other usage, including without limitation,
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Untitled
Abstract: No abstract text available
Text: DF2S8.2CT ESD Protection Diodes Silicon Epitaxial Planar DF2S8.2CT 1. Applications • ESD Protection Note: This product is designed for protection against electrostatic discharge ESD and is not intended for any other purpose, including, but not limited to, voltage regulation.
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IEC61000-4-2)
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k3759
Abstract: 2sk3759 K375 data sheet k3759
Text: 2SK3759 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOSⅥ 2SK3759 unit：ｍｍ Switching Regulator Applications Low drain-source ON resistance: R DS (ON) = 0.75Ω (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.) Low leakage current: IDSS = 100 A (V DS = 500 V)
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2SK3759
k3759
2sk3759
K375
data sheet k3759
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2SK3762
Abstract: K3762 MARKING toshiba 133
Text: 2SK3762 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOSⅣ 2SK3762 unit：ｍｍ Switching Regulator Applications 4.7max 4.7 max 10.5 10.5 max max 3.84±0.2 1.3 15.6 max 15.6 max. 1.5 max 1.5 max 3.93.9max max. 13.4 13.4 min min. Maximum Ratings (Ta = 25°C)
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2SK3762
2SK3762
K3762
MARKING toshiba 133
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SVC325
Abstract: IT0251
Text: Ordering number : ENN6649 SVC325 Diffused Junction Type Silicon Diode SVC325 Varactor Diode • • Package Dimensions Miniaturization and high-integration of tuner sets can be easily achieved due to the small package. High capacitance ratio and high quality factor.
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ENN6649
SVC325
SVC325]
SVC325
IT0251
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SVC325
Abstract: No abstract text available
Text: SVC325 Ordering number : EN6649A SVC325 Diffused Junction Type Silicon Diode Varactor Diode Features • • • Miniaturization and high-integration of tuner sets can be easily achieved due to the small package. High capacitance ratio and high quality factor.
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SVC325
EN6649A
SVC325
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K3761
Abstract: 2SK3761 DS1015
Text: 2SK3761 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOSⅥ 2SK3761 unit：ｍｍ Switching Regulator Applications 4.7max 4.7 max 10.5 10.5 max max 3.84±0.2 1.3 15.6 max 15.6 max. 13.4 min 13.4 min. Maximum Ratings (Ta = 25°C) Characteristics
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2SK3761
K3761
2SK3761
DS1015
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K3763
Abstract: 2SK3763 MARKING toshiba 133 2SK37
Text: 2SK3763 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOSIV 2SK3763 unit：ｍｍ Switching Regulator Applications 4.7max 4.7 max 10.5 10.5max max 3.84±0.2 1.3 3.84±0.2 Drain-source voltage 6.6 max. 15.6 max 15.6 max. Symbol Rating Unit
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2SK3763
K3763
2SK3763
MARKING toshiba 133
2SK37
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2SK3760
Abstract: No abstract text available
Text: 2SK3760 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOSⅥ 2SK3760 unit：ｍｍ Switching Regulator Applications 4.7max 4.7 max 10.5 10.5max max 3.84±0.2 1.3 3.84±0.2 6.6 max. 15.6 max 15.6 max. 1.5 1.5 max max 3.9 max. 13.4 13.4min min.
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2SK3760
2SK3760
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SVC347
Abstract: Marking v1
Text: SVC347 Ordering number : EN5816C SVC347 Hyper-Abrupt Junction Type Silicon Composite Varactor AM Low Voltage Electronic Tuning Applications Features • • • • • Twin type varactor diode for AM electronic tuning use. Miniaturization and high-integration of tuner sets can be easily achieved due to the small package.
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SVC347
EN5816C
SVC347
Marking v1
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Untitled
Abstract: No abstract text available
Text: SVC347 Ordering number : EN5816C SVC347 Hyper-Abrupt Junction Type Silicon Composite Varactor AM Low Voltage Electronic Tuning Applications Features • • • • • Twin type varactor diode for AM electronic tuning use. Miniaturization and high-integration of tuner sets can be easily achieved due to the small package.
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EN5816C
SVC347
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diode marking YG
Abstract: 2SC3728 MITSUBISHI LOT NO transistor cr marking
Text: MITSUBISHI SEMICONDUCTOR {SMALL-SIGNAL TRANSISTOR 2SC3728 FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC3728 Is a silicon N PN epitaxial type transistor.There is a built-in zener diode between collector to emitter.
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2SC3728
2SC3728
150to800
500mW
100mA
-10mA
diode marking YG
MITSUBISHI LOT NO
transistor cr marking
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Untitled
Abstract: No abstract text available
Text: SIEMENS BAR 64-07 Silicon PIN Diode • • • • High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz Low resistance and short carrier lifetime For frequencies up to 3 GHz Type BAR64-07 Ordering Code tape and reel
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BAR64-07
Q62702-A1044
OT-143
flE35bG5
Q120EEÃ
235bQ
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Untitled
Abstract: No abstract text available
Text: Super Fast Recovery Diode Single D iode OUTLINE Package : 1F m tm D1FL40 Unit-mm Weight 0.058g Typ i) 400V 0.8A / Ccilhode mark NÉ '4 h Feature • /J v P S M D • Small SMD • ß y - rx • Low Noise • trr=50ns • trr=50ns tt 5 k . ii Type No.
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D1FL40
D1FL40
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smd marking YF
Abstract: K711 diode marking code YF DIODE SMD CODE MARKING LG J532 smd code marking jr
Text: Schottky Barrier Diode Single Diode m tm OUTLINE Package : G1F DG1S6 Unit-mm Weight 0.01 lg Typ 60 V 1A 3.5 Feature H • iiS'JvüJSM D • Ultra-small S M D • i2 j® s y = 0 .8 m m • Ultra-thin PKG=0.8m m • < S V f = 0 .5 8 V • Low V f=0.58V
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T/-10
160mm2)
160mnf)
i50Hz
smd marking YF
K711
diode marking code YF
DIODE SMD CODE MARKING LG
J532
smd code marking jr
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