STE30NA50-DK
Abstract: ISOWATT-220 to220 ste38na50 transistors irf640 STE30NA50 STP5NA90FI STB30N10 STE30NA50-da ISOWATT220
Text: TRANSISTORS POWER MOSFETS POWER MOS 2 1 2 3 3 1 ISOTOPTM DPAK D2PAK IPAK SOT-82 SOT-223 1 ISOWATT 220TM Fully isolated TO-220 MAX220TM ISOWATT 218TM (Fully isolated) TO-247 MAX247TM Internal schematic diagrams POWER MOS VDSS (V) Ron (max) (Ω) 1000 1000
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OT-82
OT-223
O-220
220TM
MAX220TM
218TM
O-247
MAX247TM
Max247
Max220
STE30NA50-DK
ISOWATT-220
to220
ste38na50
transistors irf640
STE30NA50
STP5NA90FI
STB30N10
STE30NA50-da
ISOWATT220
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std2n52
Abstract: stp3n60 STE38NA50 *D2N52 FTP5021-0 TO220 STP60NE06-16 STD2NB60 STP3N60FI STD12NE06 stp7nb20
Text: TRANSISTORS POWER MOSFETS POWER MOS 2 1 2 3 3 1 ISOTOPTM DPAK D2PAK IPAK SOT-82 SOT-223 1 TO-220 ISOWATT 220TM / TO-220FP Fully isolated MAX220TM ISOWATT 218TM (Fully isolated) TO-247 MAX247TM Internal schematic diagrams POWER MOS Sales Type STB80NE03L-06
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OT-82
OT-223
O-220
220TM
O-220FP
MAX220TM
218TM
O-247
MAX247TM
STB80NE03L-06
std2n52
stp3n60
STE38NA50
*D2N52
FTP5021-0 TO220
STP60NE06-16
STD2NB60
STP3N60FI
STD12NE06
stp7nb20
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PDF
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ste30na50-DK
Abstract: ste30na50 ste38na50 STP15N25 STE30NA50-DA STW26N25 STY16NA90 stp20n10l BUZ10 STW75N06
Text: TRANSISTORS POWER MOSFETS POWER MOS 2 1 2 3 3 1 ISOTOPTM DPAK D2PAK IPAK SOT-82 SOT-223 2 1 ISOWATT 220TM Fully isolated TO-220 MAX220TM ISOWATT 218TM (Fully isolated) TO-247 MAX247TM Internal schematic diagrams POWER MOS VDSS (V) Ron (max) (Ω) 1000 1000
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Original
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OT-82
OT-223
220TM
O-220
MAX220TM
218TM
O-247
MAX247TM
Max247
Max220
ste30na50-DK
ste30na50
ste38na50
STP15N25
STE30NA50-DA
STW26N25
STY16NA90
stp20n10l
BUZ10
STW75N06
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PDF
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STU6NA90
Abstract: No abstract text available
Text: STU6NA90 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V DSS R DS on ID STU6NA90 900 V <2Ω 5.8 A • ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 1.5 Ω ± 30V GATE TO SOURCE VOLTAGE RATING REPETITIVE AVALANCHE TESTED LOW INTRINSIC CAPACITANCE
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STU6NA90
Max220
O-220,
O-220
STU6NA90
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U8NA80
Abstract: STU8NA80 8A320
Text: STU8NA80 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE ST U8NA80 • ■ ■ ■ ■ ■ V DSS R DS on ID 800 V < 1.0 Ω 8.3 A TYPICAL RDS(on) = 0.85 Ω EFFICIENT AND RELAIBLE MOUNTING THROUGH CLIP ± 30V GATE TO SOURCE VOLTAGE RATING
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STU8NA80
U8NA80
Max220TM
Max220
O-220,
U8NA80
STU8NA80
8A320
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PDF
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U14NA50
Abstract: STU14NA50
Text: STU14NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE ST U14NA50 • ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.36 Ω 14 A TYPICAL RDS(on) = 0.31 Ω EFFICIENT AND RELAIBLE MOUNTING THROUGH CLIP ± 30V GATE TO SOURCE VOLTAGE RATING
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STU14NA50
U14NA50
Max220TM
Max220
U14NA50
STU14NA50
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PDF
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STU9NA60
Abstract: sd 50 diode
Text: STU9NA60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V DSS R DS on ID STU9NA60 600 V < 0.8 Ω 9A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.68 Ω EFFICIENT AND RELAIBLE MOUNTING THROUGH CLIP ± 30V GATE TO SOURCE VOLTAGE RATING
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STU9NA60
Max220
O-220,
O-220
STU9NA60
sd 50 diode
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PDF
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DD 128 D transistor
Abstract: STU8NA80 8a320
Text: STU8NA80 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V DSS R DS on ID STU8NA80 800 V < 1.0 Ω 8.3 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.85 Ω EFFICIENT AND RELAIBLE MOUNTING THROUGH CLIP ± 30V GATE TO SOURCE VOLTAGE RATING
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STU8NA80
Max220TM
Max220
O-220,
O-220
DD 128 D transistor
STU8NA80
8a320
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PDF
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Untitled
Abstract: No abstract text available
Text: STU6N60 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STU6N60 • ■ ■ ■ ■ V DSS R DS on ID 600 V < 1.2 Ω 6.8 A TYPICAL RDS(on) = 1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETETIVE AVALANCHE DATA AT 100 oC
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STU6N60
Max220
O-220,
Max220TM
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PDF
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Untitled
Abstract: No abstract text available
Text: STU7NA60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STU7NA60 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 600 V < 1Ω 7.6 A TYPICAL RDS(on) = 0.92 Ω ± 30V GATE TO SOURCE VOLTAGE RATING REPETITIVE AVALANCHE TESTED DATA
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STU7NA60
STU7NA60
Max220TM
Max220
O-220,
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PDF
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Untitled
Abstract: No abstract text available
Text: STU10NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STU10NA50 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.6 Ω 10.2 A TYPICAL RDS(on) = 0.5 Ω ± 30V GATE TO SOURCE VOLTAGE RATING REPETITIVE AVALANCHE TESTED
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STU10NA50
STU10NA50
Max220
O-220,
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PDF
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STU9NA60
Abstract: No abstract text available
Text: STU9NA60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STU9NA60 • ■ ■ ■ ■ ■ V DSS R DS on ID 600 V < 0.8 Ω 9A TYPICAL RDS(on) = 0.68 Ω EFFICIENT AND RELAIBLE MOUNTING THROUGH CLIP ± 30V GATE TO SOURCE VOLTAGE RATING
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Original
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STU9NA60
Max220
O-220,
STU9NA60
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PDF
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STU7NA80
Abstract: No abstract text available
Text: STU7NA80 N - CHANNEL 800V - 1.3Ω - 6.5A - Max220 FAST POWER MOSFET PRELIMINARY DATA TYPE V DSS R DS on ID STU7NA80 800 V < 1.5 Ω 6.5 A • ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 1.3 Ω ± 30V GATE TO SOURCE VOLTAGE RATING REPETITIVE AVALANCHE TESTED DATA
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STU7NA80
Max220
Max220TM
Max220
O-220,
STU7NA80
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PDF
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STU14NA50
Abstract: No abstract text available
Text: STU14NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STU14NA50 • ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.36 Ω 14 A TYPICAL RDS(on) = 0.31 Ω EFFICIENT AND RELAIBLE MOUNTING THROUGH CLIP ± 30V GATE TO SOURCE VOLTAGE RATING
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STU14NA50
Max220TM
Max220
O-220,
STU14NA50
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PDF
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d 78040
Abstract: BS138 MAX03H 78105 2001 aavid 82940 78015 78015 to220 semiconductors cross index MAX01-H
Text: Table of Contents How to Use this Catalog . 2 How to Order The Max Clip SystemTM . 3
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STU10NA50
Abstract: No abstract text available
Text: STU10NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STU10NA50 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.6 Ω 10.2 A TYPICAL RDS(on) = 0.5 Ω ± 30V GATE TO SOURCE VOLTAGE RATING REPETITIVE AVALANCHE TESTED
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STU10NA50
Max220TM
Max220
STU10NA50
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PDF
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Untitled
Abstract: No abstract text available
Text: DIMENSIONS REF. Millimeters Min. Max. Min. Max. A 4.30 4.60 0.169 0.181 A1 2.20 2.40 0.087 0.094 A2 2.90 3.10 0.114 0.122 b 0.70 0.93 0.028 0.037 b1 1.25 1.55 0.049 0.061 b2 1.20 1.50 0.047 0.059 c 0.45 0.60 0.018 0.024 D 15.90 16.30 0.626 0.642 D1 9.00 9.35
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MAX220TM
089776A
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PDF
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STU10NA50
Abstract: V8012
Text: STU10NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STU10NA50 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.6 Ω 10.2 A TYPICAL RDS(on) = 0.5 Ω ± 30V GATE TO SOURCE VOLTAGE RATING REPETITIVE AVALANCHE TESTED
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STU10NA50
Max220TM
Max220
O-220,
O-22SGS-THOMSON
STU10NA50
V8012
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PDF
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Untitled
Abstract: No abstract text available
Text: STU6NA60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STU6NA60 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 600 V < 1.2 Ω 6.8 A TYPICAL RDS(on) = 1 Ω ± 30V GATE TO SOURCE VOLTAGE RATING REPETITIVE AVALANCHE TESTED LOW INTRINSIC CAPACITANCE
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STU6NA60
STU6NA60
Max220
O-220,
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PDF
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transistor K O220
Abstract: STU6NA90 900V2
Text: STU6NA90 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STU6NA90 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 900 V < 2Ω 5.8 A TYPICAL RDS(on) = 1.5 Ω ± 30V GATE TO SOURCE VOLTAGE RATING REPETITIVE AVALANCHE TESTED LOW INTRINSIC CAPACITANCE
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STU6NA90
Max220TM
Max220
O-220,
transistor K O220
STU6NA90
900V2
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PDF
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