XG403
Abstract: max9187 MA9187 DS3480-3 GEC Plessey Semiconductors
Text: MA9187 APRIL 1995 DS3480-3.2 MA9187 RADIATION HARD 65536 x 1 BIT STATIC RAM The MA9187 64k Static RAM is configured as 65536 x 1 bits and manufactured using GPS’s CMOS-SOS high performance, radiation hard, 1.5µm technology. The device has separate input and output terminals controlled
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MA9187
DS3480-3
MA9187
XG403
max9187
GEC Plessey Semiconductors
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Untitled
Abstract: No abstract text available
Text: GEC PLE SS EY w s I rvi i c o n D u i o k s DS3480-2.4 MA9187 RADIATION HARD 65536 X 1 BIT STATIC RAM The MA9187 64k Static RAM is configured as 65536 x 1 bits and manufactured using GPS’s CMOS-SOS high performance, radiation hard, 1.5 xm technology. Thedevice has separate input and outputterminals controlled
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DS3480-2
MA9187
MA9187
37bfi522
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Untitled
Abstract: No abstract text available
Text: GEC P L E S S E Y S i S E M I C O N D U C T O R S DS3480-3.2 MA9187 RADIATION HARD 65536 X 1 BIT STATIC RAM The MA9187 64k Static RAM is configured as 65536 x 1 bits and manufactured using GPS’s CMOS-SOS high performance, radiation hard, 1.5ftm technology.
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DS3480-3
MA9187
MA9187
45lanetary/high
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Untitled
Abstract: No abstract text available
Text: Si GEC P L ES S E Y A P R IL 1995 SEMICONDU CT OR S DS3480-3.2 MA9187 RADIATION HARD 65536 x 1 BIT STATIC RAM T he M A9187 6 4 k Static RAM is configured as 65536 x 1 bits and m anufactured using G P S ’s C M O S -S O S high perform ance, radiation hard, 1.5 ^m technology.
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DS3480-3
MA9187
A9187
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