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    VPG Transducers MAY942R86T

    RES 942.86 OHM 0.01% 0.3W RADIAL
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    DigiKey MAY942R86T Bulk 20
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    Avnet Americas MAY942R86T Bulk 20
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    • 100 $9.5408
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    Vishay Precision Group Inc MAY942R86T

    Metal Foil Resistors - Through Hole MAY942R86T 2.5 PPM
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    Mouser Electronics MAY942R86T
    • 1 $18.66
    • 10 $16.8
    • 100 $14.72
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    • 10000 $14.07
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    MAY94 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MAY942R86T Vishay Foil Resistors Resistors - Through Hole Resistors - MAY942R86T 2.5 PPM Original PDF

    MAY94 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SAE J2190

    Abstract: sae j2178 part 1 sae j2178 sae j1850 pwm controller sae j2178 2 J2178 J2205 sae j2178 messages SAE J1850 REV. MAY94 SAE J2205
    Text: Implementing the J1850 Protocol D. John Oliver Intel Corporation INTRODUCTION This paper introduces the SAE J1850 Communications Standard utilized in Onand Off-Road Land-Based Vehicles. Attributes of the J1850 protocol include an open architecture, low cost, master-less, single-level bus topology. The SAE J1850 Standard


    Original     		PDF J1850 J1850 J2178/4, SAE J2190 sae j2178 part 1 sae j2178 sae j1850 pwm controller sae j2178 2 J2178 J2205 sae j2178 messages SAE J1850 REV. MAY94 SAE J2205

    Untitled

    Abstract: No abstract text available
    Text: RMP TRENDS CUMULATIVE DATA 0.30% 10 0.24% 8 0.18% 6 0.12% 4 O/L Fits 60% Cf I/L % Def 90% Cf DS1000 125°C, 7.0 V Op. Life, 1000 hrs Inf. Life, 48 hrs 0.06% 0.00% Jan-95 2 Mar-95 May-95 Jul-95 Sep-95 Nov-95 CUMULATIVE DATA DS1232 125°C, 7.0 V 0.60% 20 Op. Life, 1000 hrs


    Original     		PDF DS1000 Jan-95 Mar-95 May-95 Jul-95 Sep-95 Nov-95 DS1232

    9502-38

    Abstract: No abstract text available
    Text: RELIABILITY MONITOR CORRECTIVE ACTION SUMMARY JOB NO. PRODUCT MONITOR STRESS/ DATE TEST P-16943 P-15358 P-16107 P-16351 P-16443 P-16662 P-16698 P-16486 P-16605 P-16785 P-16813 P-15969 P-15969 P-16277 P-12370 P-15955 P-15955 P-16247 P-16653 P-16654 P-16748


    Original     		PDF P-16943 P-15358 P-16107 P-16351 P-16443 P-16662 P-16698 P-16486 P-16605 P-16785 9502-38

    bt 80d

    Abstract: No abstract text available
    Text: AMP 14 7 0 - Id *E V 0 9 MAY94 ¿ T H IS O ft W IN S IS UMP JBL1 SHED . QUESTO D I SEGNO NON DEVE E S S E R E DIVULGATO 0 R IPR O P O T TO l C CQPVHKSHT 19 BT AMP R EL E A SE D FOR P U B LIC A T IO N E ' C O H SEN T IT A L» D IV U L G A II ONE_


    OCR Scan     		PDF MAY94 09MAY bt 80d

    bPA20

    Abstract: No abstract text available
    Text: •HYUNDAI H Y 5 1 V 1 7 1 0 0 A S e r ie s 16M x 1-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V17100Ais the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY51V17100A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY51V17100Ais HY51V17100A HY51V17100A 1AD22-00-MAY94 4b750flfl HY51V17100AJ HY51V17100ASLJ HY51V17100AT HY51V17100ASLT bPA20

    Untitled

    Abstract: No abstract text available
    Text: HY62V8400 Series 5 1 2 K x g bjt C M Q S SR A M »HYUNDAI PRELIMINARY DESCRIPTION The HY62V8400 is a high-speed, low power and 524,288 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. The HY62V8400 has a data retention mode that guarantees


    OCR Scan     		PDF HY62V8400C HY62V8400 55/70/85/100ns -100/120/150/200ns 45defl 10E03-11 MAY94 4b750fifi

    Untitled

    Abstract: No abstract text available
    Text: TH I 5 DRA W I N G IS COPYRIGHT UNPUBLI SHED. RELEASED 19 BY AMP INCORPORATED. FOR ALL PUBLICATION RIGHTS LOC . I9 EY RESERVED. D I ST R E V I S IO N S 24 LTR DATE DESCRIPTION R L S D ; N P R C96- I I 3 WIRE STUFFER EACH W I R E E N TR Y HOLE S O L I D C O P P E R 2 2 - 2 4 OR


    OCR Scan     		PDF 22JUL96 08MAY96 26NOV96 MAY94

    ti35

    Abstract: revere load cell
    Text: “H Y U N D A I H Y 5 1 1 7 4 1 0 4M X S e r ie s 4-bit CMOS DRAM with Write-Per-Bit DESCRIPTION The HY5117410 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit with function of Write-Per-Bit. The HY5117410 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced


    OCR Scan     		PDF HY5117410 1AD06-10-MAYM 1AD06-10-MA HY5117410JC HY5117410UC HY5117410TC ti35 revere load cell

    ABO-20 L

    Abstract: 1mx1 DRAM
    Text: H Y 5 1 1 6 1 0 0 • H Y U N D A I S e r ie s 16Mx 1-bit CMOS DRAM DESCRIPTION The HY5116100 is the new generation and fast dynamic RAM organized 16,777,216x 1-bit. Ttie HY5116100 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY5116100 1AD01-10-MAY94 0005AB7 HY5116100JC HY5116100LJC HY5116100TC ABO-20 L 1mx1 DRAM

    conn 5mm

    Abstract: 9-912056-6
    Text: TH I S G G DRA W I N G IS COPYRIGHT UNPUBLI SHED. RELEASED I9 BY FOR ALL - PUBLICATION RIGHTS .19 LOC RESERVED. REV I S I ONS D I ST DY LTR DATE DESCRIPTION DWN APVD SEE SHEET I OF 2 +1 508 -2 .5 I SECT A-A SECT B-1 o p/n □ o REFERENCE PICTURE OF TUBE


    OCR Scan     		PDF ECO-11-005139 19MAR11 470-I 9MAY94 conn 5mm 9-912056-6

    HY524400J70

    Abstract: No abstract text available
    Text: HY524400 Series •HYUNDAI 1Mx 4-bit CMOS DRAM DESCRIPTION The HY524400 is the new generation and fast dynamic RAM organized 1,048,576 x 4 bits. The HY524400 utilizes CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins


    OCR Scan     		PDF HY524400 313AD 1AC04-10 MAY94 HY524400J HY524400J70

    Untitled

    Abstract: No abstract text available
    Text: T H IS D RAW IN S C O P Y R I G HT IS UN P U B L I S H E D , RELEASED BY 15 AHP I N C O R P O R A T EC?. D I R E C T I ON OFF \ FOR ALL TOP ,If P U B LIC A T IO H R ISH T 5 OF LOC RESERVED, REVISIONS DI5T DY LTR REVISED REEL I \ I 1 il DATE DWH im I 7M M 0I


    OCR Scan     		PDF MAY94

    ms27240-5

    Abstract: ms27240 19PA9 MIL-S-8805 602EN222-6 PHI759I MIL-W-5088
    Text: a CA TALO G LISTING M ICRO SWITCH FREEPORT IL LINOIS. A OF DIVISION FED. M FG. CODE U S A . 602EN222-6 SWITCH-ENCLOSED HONEYWELL MILITARY STDS PART MS 2 7 2 4 0 - 5 91929 NO. •3 •5 <0 CIRCUIT DIAGRAM CVJ CVJ .437 CVJ z UJ + .000 .012 - r ' CVJ o <0 O c


    OCR Scan     		PDF PHI759I 75787-C 602EN222-6 MIL-W-22759/7 MIL-W-5088 MS2508IC4) MIL-S-8805 MS27240-5 19PA9 ms27240 602EN222-6 PHI759I MIL-W-5088

    TAA 691

    Abstract: No abstract text available
    Text: HY5116400A Series • H Y U N D A I 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5116400A HY5116400A HY5116400Ato 1AD23-10-MAY94 HY5116400AJ HY5116400ASU HY5116400Ã HY5116400ASLT TAA 691

    Untitled

    Abstract: No abstract text available
    Text: HY5117800 Series »HYUNDAI 2M X 8-bit CMOS ORAM DESCRIPTION The HY5117800 is the new generation and fast dynamic RAM organized 2,097,152 x 8-bit. The HY5117800 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5117800 HY5117800 1AD08-10-MAY94 00031bà HY5117800JC HY5117800SLJC HY5117800TC

    Untitled

    Abstract: No abstract text available
    Text: H Y 5 1 1 6 4 1 0 •H Y U N D A I S e r ie s 4M x 4-bit CMOS DRAM with Write-Per-Bit DESCRIPTION The HY5116410 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit with function of Write-Per-Bit. The HY5116410 utilizes Hyundai's CMOS silicon gate process technology as well as advanced


    OCR Scan     		PDF HY5116410 1ADO3-10-MAY94 Mb75Gflfl HY5116410JC HY5116410UC HY5116410TC HY5116410LTC

    aeg Si 42

    Abstract: No abstract text available
    Text: TH I 5 DRA W I N G IS COPYRIGHT UNPUBLI SHED. RELEASED 19 BY AMP INCORPORATED. FOR ALL PUBLICATION RIGHTS LOC . I9 DY RESERVED. REV ISIONS D I ST LT R u . MATER I AL : H O U S I N G : G L A S S F I L L E D PBT C O N T A C T : P OS T P L A T E D T I N P HOS PHOR


    OCR Scan     		PDF ECR-09-00I ECO-10-000444 I9JAN09 08JAN10 470-I 9MAY94 aeg Si 42

    Untitled

    Abstract: No abstract text available
    Text: TH I 5 DRA W I N G IS COPYRIGHT UNPUBLI SHED. 19 RELEASED BY AMP INCORPORATED. FOR ALL PUBLICATION RIGHTS . I9 LOC RESERVED. R E V I S I ONS D I ST DY P LTR A I DATE DESCRIPTION R E V I S E D P E R E C R - 06 - 0 2 9 2 0 8 { SCALE APVD DWN L3F I 4DEC06 I0- I


    OCR Scan     		PDF 4DEC06 MAY94

    Untitled

    Abstract: No abstract text available
    Text: • • H Y U N D A I H Y 5 1 1 6 4 1 0 A S e r ie s 4M x 4-bit CMOS DRAM with WPB DESCRIPTION The HY5116410A is the new generation and last dynamic RAM organized 4,194,304 x 4-bit. The HY5116410A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5116410A HY5116410A HY5116410Ato performanc00 1AD24-10-MAY94 HY5116410AJ HY5116410ASLJ HY511641 HY5116410ASLT

    Untitled

    Abstract: No abstract text available
    Text: T H I S DRAWING I S A CONTROLLED DOCUMENT FOR AMP INCORPORATED IT I S SU BJ EC T TO CHANGE AND THE CONT RO LLI NG E N G IN E E R I N G O R G A N IZ A T IO N SHOULD BE CONTACTED FOR THE L A T E S T R E V I S I O N . D I5T LOC FT REVISIO NS 4 P LTR D ESCRIPTION


    OCR Scan     		PDF C05T0MER OG1C-0025-99 09MAY94 19-FEB-99 arnp02202 /home/ssnv026d/dsk01 /dept4223/amp02202/edinmod

    79030

    Abstract: No abstract text available
    Text: TH I 5 DRA W I N G IS U NPUBLI SHED. RELEASED COPYRIGHT F OR ALL BY PUBLICATION RI GHTS REV I S IONS D I ST LOC RESERVED. DY LTR E1 DIRECTION Notes: OFF / 1 1 6 1 8 1 53 I /\ 700 S . 85 12 7H j I I— \ 16 4 50 i Ii I LJ 25 1 J I / 800 12 I I 5 85 6 I A 1-


    OCR Scan     		PDF 29REEL 30AUG0 470-I 9MAY94 79030

    016903

    Abstract: No abstract text available
    Text: TH I 5 DRA W I N G IS COPYRIGHT UNPUBLI SHED. 19 RELEASED BY AMP FOR ALL INCORPORATED. PUBLICATION RIGHTS . I9 LOC RESERVED. R E V I S IO N S D I ST DY LTR N OT E S : INDICATION OP NUMB E R OF WHITE /4\ POSITION 3_\P I N I S H : P OST PLATED TIN 4 \ P OST


    OCR Scan     		PDF PPOO-0169-03 470-I 9MAY94 016903