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    MB6264A

    Abstract: MB6264 TIC 120 MB8264A-15
    Text: FU JITSU 10 M IC R O E U S C T R O N IC S . IN C -12 15 NMOS 65,536-BIT DYNAMIC RANDOM ACCESS MEMORY DESCRIPTION The Fujitsu MB8264A is a fully decoded, dynamic NMOS random access memory organized as 65,536 one-bit words. The de­ sign is optimized for high-speed, high per­


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    PDF 536-BIT MB8264A 16-pin 18-pad MBS264A 10Ojus/Division MB6264A MB6264 TIC 120 MB8264A-15

    MN4164P-12A

    Abstract: MB8264-15 8264-20 RAM MCM6665L20 mn4164 MB8265-20 MCM6665L25 MN4164P-20 MSM3764-15RS M5K4164P-20
    Text: 6 4 K * m % tt £ CC TRAC •ax ns) TRCY ■in (ns) 4 TCAD ■in (ns) V nM0 S f- > y n D y n a m i c RAM (6 5 5 3 6 x 1) m. tt TAK ■in (ns) TP rain (ns) TBCY min <ns) TDH ■in (ns) TRWC min (ns) V D D or V C C I DD (V) (mA) M5K4164P-20 MITSUBISHI 0—-70


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    PDF 65536X1) M5K4164P-20 M5K41B4S-15 M5K4164S-20 128/P-20 MN4164P-25 MSM3764-12AS MSM3764-12AS/JS MSM3764-15AS MSM3764-15AS/JS MN4164P-12A MB8264-15 8264-20 RAM MCM6665L20 mn4164 MB8265-20 MCM6665L25 MN4164P-20 MSM3764-15RS

    MB8264-15

    Abstract: MB8264-20 mcm6665 IMS2600 MB6264 pd4164 MB8264 PD416 tms4164 MK4164
    Text: ,J F U J IT S U M ICROELECTRONICS. INC. MS8264-15 ^7 H p p P lr B iW NMOS 65,536-BIT DYNAMIC RANDOM ACCESS MEMORY wm- U-c. DESCRIPTION The Fujitsu MB8264 is a fu lly de­ coded, dynam ic NMOS random ac­ cess memory organized as 65536 one-bit words. The design is optim iz­


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    PDF MS8264-15 536-BIT MB8264 16-pin MB8264-15/MB8264-20 MB8264-15 MB8264-20 mcm6665 IMS2600 MB6264 pd4164 PD416 tms4164 MK4164

    MBB264A-18

    Abstract: No abstract text available
    Text: preliminary FUJITSU MOS Memories • MB8264A-12-W, MB8264A-15-W NMOS 65,536-Bit Dynamic Random Access Memory With Wide Temperature Range Description The MB8264A-W Is a 64K x 1 dynamic RAM intended for operation over the case temperature range -55*C to 110 *C. The part Is also


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    PDF MB8264A-12-W, MB8264A-15-W 536-Bit MB8264A-W MBB264A-18