Untitled
Abstract: No abstract text available
Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11221-1E MEMORY CMOS 2 M x 64 BITS HYPER PAGE MODE DRAM MODULE MB8502E064AB-60/-70 Buffered, 2 M × 64 BITS Hyper Page Mode DRAM Module, 5 V, 1-bank • DESCRIPTION The Fujitsu MB8502E064AB is a fully decoded, CMOS Dynamic Random Access Memory DRAM module
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DS05-11221-1E
MB8502E064AB-60/-70
MB8502E064AB
MB8117805A
168-pin
F9703
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3654P
Abstract: DRAM 4464 jeida dram 88 pin MB814260 4464 dram 1024M-bit 4464 64k dram MB81G83222-008 mb814400a-70 4464 ram
Text: To Top / Lineup / Index Product Line-up Memory Volatile memory 4M-bit DRAM 5.0V RAM 4M-bit DRAM (3.3V) 16M-bit DRAM (5.0V) 16M-bit DRAM (3.3V) 16M-bit SDRAM 64M-bit SDRAM SGRAM DRAM Modules (5.0V) DRAM Modules (3.3V) SDRAM Modules Non-Volatile memory Rewritable
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16M-bit
64M-bit
68-pin)
88-pin)
MB98C81013-10
MB98C81123-10
MB98C81233-10
MB98C81333-10
3654P
DRAM 4464
jeida dram 88 pin
MB814260
4464 dram
1024M-bit
4464 64k dram
MB81G83222-008
mb814400a-70
4464 ram
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Untitled
Abstract: No abstract text available
Text: MMMmmmssssssssssssssssss MODULE Buffered, 2 M x 64 BITS Hyper Page Mode DRAM Module, 5 V, 1-bank • DESCRIPTION The Fujitsu MB8502E064AB is a fully decoded, CMOS Dynamic Random.Access Memory DRAM module consisting of eight M B8117805A devices. The MB8502E064AB is opti mi zed: for those applications requiring high
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MB8502E064AB
B8117805A
8502E064A
F9703
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128M-BIT
Abstract: 256-MBIT 128-MBIT
Text: DRAM Modules 1 • DRAM Modules - Normal Voltage Versions (CMOS) Vcc= +5V+10%, Ta=0°C to +70~C Organization (Wxb) 1Mx32 Mounted Device X number <Package> Operating Standby Mode (CMOS level} 60(15] 70(20] 2684 2376 44 72Pin SIMM 60(15] 70(20] 2904 2424 44
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MB814400C
MB814405C
72Pin
MB85341C-60
MB85341C-70
1Mx32
MB85343C-60
MB85343C-70
32M-bit
128M-BIT
256-MBIT
128-MBIT
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