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    MB85RS16PNF Search Results

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    MB85RS16PNF Price and Stock

    KAGA FEI America Inc MB85RS16PNF-G-JNERE1

    IC FRAM 16KBIT SPI 20MHZ 8SOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MB85RS16PNF-G-JNERE1 Reel 1,500
    • 1 -
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    • 10000 $1.2824
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    MB85RS16PNF-G-JNERE1 Digi-Reel 1
    • 1 $1.82
    • 10 $1.82
    • 100 $1.82
    • 1000 $1.82
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    MB85RS16PNF-G-JNERE1 Cut Tape 1
    • 1 $1.82
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    Mouser Electronics MB85RS16PNF-G-JNERE1
    • 1 $1.55
    • 10 $1.42
    • 100 $1.23
    • 1000 $1.15
    • 10000 $1.06
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    KAGA FEI America Inc MB85RS16PNF-G-JNE1

    F-RAM 16kbit FRAM, SPI, 2.7V 3.6V, 85C - SOP8 Tube
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    Mouser Electronics MB85RS16PNF-G-JNE1
    • 1 $1.55
    • 10 $1.42
    • 100 $1.32
    • 1000 $1.11
    • 10000 $1.06
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    FUJITSU Limited MB85RS16PNF-G-JNE1

    SPECIALTY MEMORY CIRCUIT, PDSO8
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    Quest Components MB85RS16PNF-G-JNE1 617
    • 1 $4.407
    • 10 $4.407
    • 100 $2.7177
    • 1000 $2.4239
    • 10000 $2.4239
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    FUJITSU Semiconductor Limited MB85RS16PNF-G-JNE1

    16kbit FRAM,SPI,SOP8 BULK
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    Symmetry Electronics MB85RS16PNF-G-JNE1 1
    • 1 $0.64
    • 10 $0.64
    • 100 $0.64
    • 1000 $0.64
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    FUJITSU Semiconductor Limited MB85RS16PNF-G-JNERE1

    IC FRAM 16KBIT 20MHZ 8SOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics MB85RS16PNF-G-JNERE1 206,600
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    • 10 -
    • 100 $0.621
    • 1000 $0.414
    • 10000 $0.414
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    MB85RS16PNF Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MB85RS16PNF-G-JNERE1 Fujitsu Memory, Integrated Circuits (ICs), IC FRAM 16KBIT 20MHZ 8SOP Original PDF

    MB85RS16PNF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00014-6v0-E Memory FRAM 16 K 2 K x 8 Bit SPI MB85RS16 • DESCRIPTION MB85RS16 is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile


    Original
    PDF DS501-00014-6v0-E MB85RS16 MB85RS16

    MB85RS16

    Abstract: 30f 124 equivalent
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00014-4v0-E Memory FRAM 16 K 2 K x 8 Bit SPI MB85RS16 • DESCRIPTION MB85RS16 is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile


    Original
    PDF DS501-00014-4v0-E MB85RS16 MB85RS16 30f 124 equivalent

    MB85RS16PNF

    Abstract: MB85RS16
    Text: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00015-1v0-E FRAM MB85RS16 MB85RS16 is a 16K-bits FRAM LSI with serial interface SPI , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,


    Original
    PDF NP501-00015-1v0-E MB85RS16 MB85RS16 16K-bits MB85RS16PNF

    MB85RS16PNF

    Abstract: MB85RS16 mb85rs
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00014-1v0-E Memory FRAM 16 K 2 K  8 Bit SPI MB85RS16 • DESCRIPTION MB85RS16 is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile


    Original
    PDF DS501-00014-1v0-E MB85RS16 MB85RS16 MB85RS16PNF mb85rs

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00014-2v0-E Memory FRAM 16 K 2 K x 8 Bit SPI MB85RS16 • DESCRIPTION MB85RS16 is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile


    Original
    PDF DS501-00014-2v0-E MB85RS16 MB85RS16

    GT10-C30R4-8P pin configuration

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00015-3v0-E FRAM MB85RS16 MB85RS16 is a 16K-bits FRAM LSI with serial interface SPI , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory, it is suitable for the log management and the storage of the


    Original
    PDF NP501-00015-3v0-E MB85RS16 MB85RS16 16K-bits GT10-C30R4-8P pin configuration

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00014-5v0-E Memory FRAM 16 K 2 K  8 Bit SPI MB85RS16 • DESCRIPTION MB85RS16 is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile


    Original
    PDF DS501-00014-5v0-E MB85RS16 MB85RS16

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00014-0v01-E Memory FRAM 16 K 2 K x 8 Bit SPI MB85RS16 • DESCRIPTION MB85RS16 is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile


    Original
    PDF DS501-00014-0v01-E MB85RS16 MB85RS16

    MB85RS16

    Abstract: 30f 124 equivalent
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00014-3v0-E Memory FRAM 16 K 2 K x 8 Bit SPI MB85RS16 • DESCRIPTION MB85RS16 is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile


    Original
    PDF DS501-00014-3v0-E MB85RS16 MB85RS16 30f 124 equivalent

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00014-5v0-E Memory FRAM 16 K 2 K  8 Bit SPI MB85RS16 • DESCRIPTION MB85RS16 is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile


    Original
    PDF DS501-00014-5v0-E MB85RS16 MB85RS16