TOP 948

Abstract: S944 BDS948 m lc 945 f 948 BDS944 BDS946 USB002 c 948 W468
Contextual Info: PHILIPS IN TE RNATIONAL SbE Product specification date of issue April 1991 • 711002b 00431ÛG 33fi « P H I N 33-/7 BDS944/946/948 Data sheet status D T- PNP silicon epitaxial base power transistors DESCRIPTION PINNING - SOT223 PIN 1 2 3 4 PNP silicon epitaxial base transistors

BF926

Abstract: BF926 philips PNP UHF transistor transistor BF926
Contextual Info: BF926_ — = T - 3 H 7 ._ -._ _ L L - PHILIPS INTERNATIONAL SbE D m D0421flb Tb^ « P H I N SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor in a TO-92 envelope intended for use as preamplifier, mixer and oscillator in v.h.f. and

Contextual Info: • APX LLS3S31 0D2MM71 HbU N AMER PHILIPS/DISCRETE BC856 BC857 BC858 L7E D ; v SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistros, in a SOT-23 plastic package. QUICK REFERENCE DATA BC856 BC857 BC858 “ V CEX max. 80 50 30 V - v CEO max. 65 45 30 V Collector current peak value

Contextual Info: BSS63 _J V HIGH VOLTAGE P-N-P TRANSISTORS Silicon planar epitaxial transistor in a m icrominiature plastic package intended fo r application in thick and thin -film circuits. This transistor is intended fo r high voltage general purpose and switching

Contextual Info: BF579 _J V SILICON PLANAR TRANSISTOR P-N-P transistor in a m icrom iniature envelope prim arily intended fo r u.h.f. applications in thick and th in -film circuits. Q UICK REFERENCE D ATA - v CBO max. 20 V Collector-em itter voltage open base

Contextual Info: bbSB^Bl 0D2Mb]i7 27T * A P X N AMER PHILIPS/DISCRETE BCX71 SERIES b7E J> J V SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P silicon transistors, in a microminiature plastic envelope, intended for low level, low noise, low frequency purpose applications in hybrid circuits.

BDS940

Abstract: BOS938 lem HA BDS934 BDS936 BDS938 BDS942 USB002 smd transistors 458
Contextual Info: Philips Component« BDS934/936/938/940/942 Datasheet status Product specification date of Issue April 1991 PNP silicon epitaxial base power transistors PINNING -SOT223 DESCRIPTION DESCRIPTION base collector emitter collector PIN 1 2 3 4 PNP silicon epitaxial base transistors

BF324

Abstract: BF324 philips transistor BF324
Contextual Info: BF324 r -ILips i n t e r n a t i o n a l SbE » 711G ö2b DO MElMb 2ÖS • P H I N T"3l-{7 H,F. SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor in a plastic envelope especially intended for r.f. stages in f.m. front-ends in common base configuration.

PNP Epitaxial Silicon Transistor sot223

Abstract: BDS78 RF SMD transistors pnp TP 2404 BDS201 BDS202 BDS204 IEC134
Contextual Info: PHILIPS INTERNA TI ON AL SbE Product specification date of issu e April 1991 | 7 i i o â s t i oo4 3m a ? s i m p h i n T-33-tr BDS202/204/78 Data sheet s ta t u s D PNP Silicon epitaxial base power transistors PINNING - SOT223 D ESCRIPTIO N D ESCRIPTIO N

C3317

Abstract: S95 SMD 1S91 BDS950 BDS952 BDS954 BDS956
Contextual Info: PHILIPS INTERNATIONAL SbE D • 7110fl2b D O M B n b 7TS « P H I N Philips Components Data sheet status Product specification date of issue April 1991 BDS950/952/954/956 P » - '7 PNP Silicon epitaxial base power transistors D ESCRIPTIO N PINNING - SOT223

Contextual Info: BC807 BC808 _ SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors, in a SOT-23 plastic package fo r use in driver and ou tp u t stages o f aufio amplifiers in thick and thin -film hybrid circuits. N-P-N complements are BC817; R and BC818; R respectively.

Contextual Info: • bb53T31 0Q24b77 744 APX N AUER PHILIPS/DISCRETE L7E BF721 BF723 J> SILICON EPITAXIAL TRANSISTORS PNP transistors in a microminiature plastic envelope intended for application in class-B video output stages in colour television receivers, and general purpose high voltage circuits.

Contextual Info: • bbS3^31 0Q24b71 52b H A P X N AUER PHILIPS/DISCRETE BF660 b7E » ; v SILICON PLANAR TRANSISTOR P-N-P transistor, in a microminiature plastic envelope; intended for use as oscillator in v.h.f. tuners with extended frequency range and/or in conjunction with M OS-FETs in thick and thin-film circuits.

Contextual Info: N AMER PHILIPS/DISCRETE bTE T> m ^1^53^31 0026143 41b A IAPX id N a y u b SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistor in a plastic TO-92 envelope, prim arily intended for high-speed, saturated switching applications for industrial service. NPN complement is 2N3904.

transistor f6 13003

Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.

W1P 59 transistor

Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
Contextual Info: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors

marking bgp

Abstract: BCX71 BCX71G BCX71H
Contextual Info: • ^53=131 G024bl7 E7T M A P X N AMER PHILIPS/DISCRETE BCX71 SERIES b7E J> SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P silicon transistors, in a m icrom iniature plastic envelope, intended fo r low level, low noise, low frequency purpose applications in hybrid circuits.

L7E transistor

Abstract: BF820 BF821 BF822 BF823
Contextual Info: • bb53^31 N AMER □□2M7DM 5T2 B A P X PHILIPS/DISCRETE L7E BF821 BF823 ]> SILICON EPITAXIAL TRANSISTORS P-N-P transistors in a microminiature plastic envelope intended for application in thick and thin-film circuits. Primarily intended fo r use in telephony and professional communication equipment. N-P-N

BF720

Abstract: BF721 BF722 BF723
Contextual Info: • bb53T31 002Mb77 744 H A P X N AMER PHILIPS/DISCRETE BF721 BF723 L7E » S ILIC ON E PITA XIA L T R A N S IS T O R S PNP tra n s is to rs in a m ic ro m in ia tu re plastic envelope in te nded f o r a p p lic a tio n in class-B video o u tp u t stages in c o lo u r tele visio n receivers, and general pu rpose high volta ge c irc u its .

Contextual Info: BF660 _ / V SILICON PLANAR TRANSISTOR P-N-P transistor, in a microminiature plastic envelope; intended fo r use as oscillator in v.h.f. tuners w ith extended frequency range and/or in conjunction with MOS-FETs in thick and thin-film circuits,

Contextual Info: • bb53T31 DD34bM3 fiflT HIAPX N AUER PHILIPS/DISCRETE BF550 b?E D SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor, in a microminiature plastic envelope, intended for applications in thick and thin-film circuits. This transistor is primarily intended for use in i.f. detection applications.

transistor smd ALG

Abstract: transistor ALG 20 transistor ALG ALG TRANSISTOR SMD MARKING CODE ALg
Contextual Info: • bbSBIBl OOSSAbb blfl ■ APX N AMER PHILIPS/DISCRETE PM BT3906 b?E D 7V SILICON EPITAXIAL TRANSISTOR P-N-P transistor in a microminiature SMD plastic envelope intended for surface mounted applications. The PMBT3906 is primarily intended for use in telephony and professional communication equipment.

Contextual Info: • bb53^31 00256=14 562 H A P X N AMER PHILIPS/DISCRETE b?E D _ PMBTA55 PMBTA56 J SILICON EPITAXIAL TRANSISTORS P-N-P transistors in a microminiature SMD plastic envelope intended for surface mounted applications.

transistor SMD MARKING CODE HF

Abstract: smd code HF transistor
Contextual Info: • bbS3T31 0DE470fl 14fl ■ APX N AUER PHILIPS/DISCRETE BF824 b7E D 7 V H.F. SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor in a plastic SOT-23 envelope especially intended for r.f. stages in f.m. front-ends in common base configuration for SMD applications.