W1P 59 transistor
Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
Text: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors
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197/197X
S310N
W1P 59 transistor
W1p 48 TRANSISTOR
transistor w1P 83
ICM AP 1703
transistor SMD marked RNW
transistor BD139 PH 71
W1P 66 transistor
transistor w1P 91
Pnp transistor smd ba rn
w1p npn
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BF660
Abstract: marking IAY
Text: •I tbS3T31 0D24b71 22b H A P X N AMER PHILIPS/DISCRETE BF660 b7E » SILICO N PLANAR T R A N SIST O R P-N-P transistor, in a m icrom iniature plastic envelope; intended fo r use as oscillator in v.h.f. tuners w ith extended frequency range and/or in conjunction w ith M O S - F E T s in thick and thin-film circuits.
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tbS3T31
0D24b71
BF660
OT-23.
April199lj
BF660
marking IAY
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Untitled
Abstract: No abstract text available
Text: • bb53^31 D0S4704 STS B A P X N AMER PHILIPS/DISCRETE BF821 BF823 b?E D J V SILICON EPITAXIAL TRANSISTORS P-N-P transistors in a microminiature plastic envelope intended for application in thick and thin-film circuits. Primarily intended fo r use in telephony and professional communication equipment. N-P-N
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D0S4704
BF821
BF823
BF820,
BF822
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Untitled
Abstract: No abstract text available
Text: bbSBTBl 00245=17 b51 « A P X N APIER PHILIPS/DISCRETE BCX17 BCX18 b?E D y v SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors, in a SOT-23 plastic envelope, intended fo r application in thick and thin-film circuits. These transistors are intended for general purposes as well as saturated switching and driver applications
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BCX17
BCX18
OT-23
BCX19
BCX20
G024bDD
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to 92 dimensions
Abstract: BF484 BF486 BF488
Text: b3E J> m BF484 BF486 BF488 □□7H2ÔM b77 • SIC 3 N A P C /P H I L IP S SEPIICOND FOR D E T A IL E D IN F O R M A T IO N SEE THE LATEST ISSUE OF HAN D BO O K SC04 OR D ATASH EET SILICON PLANAR EPITAXIAL TRANSISTORS PNP transistors in a TO-92 envelope and intended for use in video output stages of black and
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BF484
BF486
BF488
MBB01B
to 92 dimensions
BF488
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Untitled
Abstract: No abstract text available
Text: BF569 _ J v_ SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor in a microminiature plastic envelope, intended for applications in thick and thin-film circuits such as self-oscillating mixer in u.h.f. tuners in conjunction with bipolar transistors or with
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BF569
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bcb57b
Abstract: BCB57 BC856B 3BP BC858 BC856 BC856A BC856B silicon planar epitaxial transistors BC857A BC857B
Text: 7 1 1 G Ô E b Q O b ö H B ? 2b2 BC856 BC857 BC858 IPHIN SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistros, in a S O T-23 plastic package. Q U IC K R E F E R E N C E D A T A BC856 BC857 BC858 Col lector-emitter voltage + V g E = 1 V “ V C EX max. 80
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0DbflH37
BC856
BC857
BC858
OT-23
BC856
200/xA
OT-23.
bcb57b
BCB57
BC856B 3BP
BC856A
BC856B
silicon planar epitaxial transistors
BC857A
BC857B
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