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Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: BC264A to D _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _A_ _ _ N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Symmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; in tended for hi-fi amplifiers and other audio-frequency equipment.	OCR Scan	BC264A tjtiS3T31 0D3S715	PDF
BF247A Abstract: No abstract text available Text: _ s\ BF246A to C BF247A to C _ N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Symmetrical n-channel planar epitaxial junction field-effect transistors in plastic TO-92 variants, intended for VHF and UHF amplifiers, mixers and general purpose switching.	OCR Scan	BF246A BF247A	PDF
BB530 Abstract: No abstract text available Text: • [3^53131 DDESMTti T47 ■ APX BF245A TO C N AUER PHILIPS/DISCRETE L7E D N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS General purpose symmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended for applications in l.f. and d.c. amplifiers, and in h.f. amplifiers.	OCR Scan	BF245A BF245A/0 0023SD4 bhS3T31 7Z62701 hbS3T31 BB530	PDF
BGY41 Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.	OCR Scan	LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc	PDF
MBB114 Abstract: J110 PZFJ108 PZFJ109 PZFJ110 Text: • 7110fiEb OObflOMfl M m ■ PHIN Philips Semiconductors Data sheet status Product specification date of issue July 1993 FEATURES • High speed sw itching • Interchangeability o f drain and source connections • Low RDS on at zero gate voltage (< 8 £2 for PZFJ108)	OCR Scan	7110fl2b PZFJ108/PZFJ109/PZFJ110 PZFJ108) -SOT223 OT223 MBB114 711GS2b PZFJ109) PZFJ110) MBB114 J110 PZFJ108 PZFJ109 PZFJ110	PDF
BFU309 Abstract: No abstract text available Text: titiS3 T31 □□E3 b f l4 H 7 P hilips Sem iconductors APX Prelim inary specification N-channel silicon field-effect transistors , BFU308/309/310 N Af1 FP PHTI TPS/DTSCRETE L71 FEATURES PIN CONFIGURATION • Low noise • Interchangeability of drain and source connections	OCR Scan	BFU308/309/310 MSB032 MBB114 PINNING-TO-18 00E3b b53T31 BFU309	PDF
PMBFJ111 Abstract: No abstract text available Text: b b S B 'm 0024DS2 W «APX P h ilip s S e m ic o n d u c to rs P M B F J111/P M B F J112/ PM B FJ113 Data sheet status Product specification date of issue July 1993 N-channel junction FETs N AMER PHILIPS/DISCRETE FEATURES PIN CONFIGURATION PINNING - SOT23	OCR Scan	0024DS2 J111/P J112/ FJ113 PMBFJ111) PMBFJ112) PMBFJ113) DD24D55 PMBFJ111/PMBFJ112/PMBFJ113 PMBFJ111	PDF
Untitled Abstract: No abstract text available Text: m b b s a ^ i □□E4D7ti 021 * a p x n amer p h i l i p s /d i s c r e t e Philips Semiconductors D a ta sh eet s tatu s Product specification d a te o f issue Ju ly 1 9 9 3 FEATURES • High speed switching • Interchangeability of drain and source connections	OCR Scan	PZFJ108) OT223 PZFJ108/PZFJ109/PZFJ110 MBB114 PZFJ109) PZFJ110)	PDF
J110 Abstract: PZFJ108 PZFJ109 PZFJ110 Text: • ^53^31 □ 0 2 4 D 7 C1 DB1 m * P X N A PIER P H I L I P S / D I S C R E T E Philips Semiconductors Data sheet status Product specification date of issue July 1993 FEATURES • High speed sw itching • Interchangeability o f drain and source connections	OCR Scan	PZFJ108/PZFJ109/PZFJ110 -SOT223 PZFJ108) MBB114 OT223 PZFJ109) PZFJ110) 00240A2 J110 PZFJ108 PZFJ109 PZFJ110	PDF