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    PMF400UN

    Abstract: No abstract text available
    Text: PMF400UN N-channel µTrenchMOS ultra low level FET Rev. 01 — 11 February 2004 Product data M3D102 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • Surface mounted package


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    PMF400UN M3D102 OT323 SC-70) PMF400UN PDF

    PMF370XN

    Abstract: SOT323 FET N M 087
    Text: PMF370XN N-channel µTrenchMOS extremely low level FET Rev. 01 — 11 February 2004 Product data M3D102 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features


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    PMF370XN M3D102 OT323 SC-70) PMF370XN SOT323 FET N M 087 PDF

    Untitled

    Abstract: No abstract text available
    Text: Product specification Philips Semiconductors Schottky barrier double diodes FEATURES BAS70W series PINNING • Low forward voltage BAS70 PIN • High breakdown voltage • Guard ring protected • Very small S M D package • Low capacitance. W -04W -05W


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    BAS70W BAS70 BAS70W) BAS70-04W; MBC870 OT323) OT323 PDF

    NT 407 F TRANSISTOR TO 220

    Abstract: NT 407 F TRANSISTOR BFT92 m1b marking marking code 10 sot23 BFT92W
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFT92W PNP 4 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors May 1994 Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W FEATURES


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    BFT92W OT323 BFT92W BFT92. MBC870 SCD31 123065/1500/01/pp12 NT 407 F TRANSISTOR TO 220 NT 407 F TRANSISTOR BFT92 m1b marking marking code 10 sot23 PDF

    MRC002

    Abstract: MRC005 MRC008 BFS540 MRC003 philips bfs540
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFS540 NPN 9 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 November 1992 Philips Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES BFS540 PINNING • High power gain


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    BFS540 OT323 MBC870 OT323 OT323. MRC002 MRC005 MRC008 BFS540 MRC003 philips bfs540 PDF

    MRC026

    Abstract: MRC025 MRC027 BFS520 mrc024 MRC021
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFS520 NPN 9 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES BFS520 • High transition frequency It is intended for wideband applications such as satellite TV


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    BFS520 OT323 OT323 MBC870 R77/03/pp13 MRC026 MRC025 MRC027 BFS520 mrc024 MRC021 PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN 1 GHz wideband transistor APPLICATIONS BFS17W PINNING Primarily intended as a mixer, oscillator and IF amplifier in UHF and VHF tuners. DESCRIPTION PIN DESCRIPTION 1 base 2 emitter 3 collector 1 Silicon NPN transistor in a plastic


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    BFS17W OT323 BFS17W BFS17. MBC870 711062b 711Dfl5b PDF

    1PS70SB82

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D102 1PS70SB82; 1PS70SB84; 1PS70SB85; 1PS70SB86 Schottky barrier double diodes Product data sheet 2001 Jan 18 NXP Semiconductors Product data sheet 1PS70SB82; 1PS70SB84; 1PS70SB85; 1PS70SB86 Schottky barrier (double) diodes


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    M3D102 1PS70SB82; 1PS70SB84; 1PS70SB85; 1PS70SB86 1PS70SB82 1PS70SB82 PDF

    BFS540

    Abstract: MRC005
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BFS540 NPN 9 GHz wideband transistor Product specification Supersedes data of 1997 Dec 05 2000 May 30 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFS540 FEATURES DESCRIPTION


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    M3D102 BFS540 OT323 MBC870 613516/04/pp12 BFS540 MRC005 PDF

    Untitled

    Abstract: No abstract text available
    Text: PMF280UN N-channel µTrenchMOS ultra low level FET Rev. 01 — 27 February 2004 Product data M3D102 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • Surface mounted package


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    PMF280UN M3D102 OT323 SC-70) MBC870 771-PMF280UN115 PMF280UN PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BFT92W PNP 4 GHz wideband transistor Product specification May 1994 NXP Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic, SOT323 S-mini package. The


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    BFT92W OT323 BFT92W BFT92. MBC870 OT323. R77/01/pp14 PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BFS505 NPN 9 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES BFS505 PINNING • Low current consumption PIN DESCRIPTION 3 handbook, 2 columns


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    BFS505 OT323 MBC870 OT323. OT323 R77/03/pp14 PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D102 BFS540 NPN 9 GHz wideband transistor Product specification Supersedes data of 1997 Dec 05 2000 May 30 NXP Semiconductors Product specification NPN 9 GHz wideband transistor BFS540 FEATURES DESCRIPTION • High power gain


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    M3D102 BFS540 OT323 MBC870 R77/04/pp13 PDF

    Untitled

    Abstract: No abstract text available
    Text: BSH121 N-channel enhancement mode field-effect transistor Rev. 01 — 14 August 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSH121 in SOT323.


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    BSH121 BSH121 OT323. OT323, PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AW FEA TUR ES D ES C R IPTIO N • High power gain Silicon NPN transistor encapsulated • Gold metallization ensures excellent reliability in a plastic SO T323 S-mini package.


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    BFR93AW BFR93A. MBC870 711062b 7110flEb PDF

    Untitled

    Abstract: No abstract text available
    Text: Product specification Philips Semiconductors Schottky barrier double diodes BAT54W series PINNING FEATURES • Low forward voltage BAT54 PIN • Guard ring protected • Very small SMD package. APPLICATIONS W AW CW SW 1 a 2 n.c. ki k2 ai a2 ai k2 3 k i ►?)


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    BAT54W BAT54 BAT54AW OT323 PDF

    Philips FA 564

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT93W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic, SOT323 S-mini package. The BFT93W uses the same crystal as the SOT23 version, BFT93. • Gold metallization ensures


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    BFT93W OT323 BFT93W BFT93. MBC870 OT323. 711002b. Philips FA 564 PDF

    marking code W1

    Abstract: BFT92 BFT92W TRANSISTOR 3358 NH35
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFT92W PNP 4 GHz wideband transistor Product specification May 1994 NXP Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic,


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    BFT92W OT323 BFT92W BFT92. MBC870 OT323. R77/01/pp14 marking code W1 BFT92 TRANSISTOR 3358 NH35 PDF

    BFR93AW

    Abstract: MBG204 marking G SOT323 Transistor BFR93A
    Text: Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AW FEATURES DESCRIPTION • High power gain Silicon NPN transistor encapsulated in a plastic SOT323 S-mini package. The BFR93AW uses the same crystal as the SOT23 version, BFR93A.


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    BFR93AW OT323 BFR93AW BFR93A. 711002b 711062b MBG204 marking G SOT323 Transistor BFR93A PDF

    BAT854SW

    Abstract: BAT854AW BAT854CW BAT854W MLC359
    Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D102 BAT854W series Schottky barrier double diodes Product data sheet 2001 Feb 27 NXP Semiconductors Product data sheet Schottky barrier (double) diodes FEATURES BAT854W series PINNING • Very low forward voltage


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    M3D102 BAT854W BAT854W BAT854CW BAT854AW 613514/01/pp7 BAT854SW BAT854CW MLC359 PDF

    SMD DIODE bas70

    Abstract: MLC359 A2 DIODE SMD CODE MARKING smd transistor marking A2 BAS70 BAS70-04W BAS70-05W BAS70W MLC360
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D102 BAS70W series Schottky barrier double diodes Product specification Supersedes data of October 1994 File under Discrete Semiconductors, SC01 1996 Mar 19 Philips Semiconductors Product specification Schottky barrier (double) diodes


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    M3D102 BAS70W BAS70 MLC358 BAS70- SMD DIODE bas70 MLC359 A2 DIODE SMD CODE MARKING smd transistor marking A2 BAS70 BAS70-04W BAS70-05W MLC360 PDF

    1PS70SB82

    Abstract: 1PS70SB85 1PS70SB86 MLC359 1PS70SB84
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 1PS70SB82; 1PS70SB84; 1PS70SB85; 1PS70SB86 Schottky barrier double diodes Product specification 2001 Jan 18 Philips Semiconductors Product specification 1PS70SB82; 1PS70SB84; 1PS70SB85; 1PS70SB86 Schottky barrier (double) diodes


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    M3D102 1PS70SB82; 1PS70SB84; 1PS70SB85; 1PS70SB86 1PS70SB82 1PS70SB82 1PS70SB85 1PS70SB86 MLC359 1PS70SB84 PDF

    BFR93AW

    Abstract: BFR93A
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFR93AW NPN 5 GHz wideband transistor Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC14 1995 Sep 18 Philips Semiconductors Product specification NPN 5 GHz wideband transistor


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    BFR93AW OT323 BFR93AW BFR93A. BFR93A PDF

    MBG240

    Abstract: BFS17 BFS17W
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFS17W NPN 1 GHz wideband transistor Product specification Supersedes data of November 1992 File under discrete semiconductors, SC14 1995 Sep 04 Philips Semiconductors Product specification NPN 1 GHz wideband transistor APPLICATIONS


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    BFS17W OT323 BFS17W BFS17. MBC870 MBG240 BFS17 PDF