MBH32A
Abstract: No abstract text available
Text: 32 Lead Molded Thin Small Outline Package EIAJ Type I NS Package Number MBH32A All dimensions are in millimeters LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL
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MBH32A
MBH32A
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C1995
Abstract: J32AQ NM27C040 VA32A
Text: NM27C040 4 194 304-Bit 512K x 8 High Performance CMOS EPROM General Description The NM27C040 is a high performance 4 194 304-bit Electrically Programmable UV Erasable Read Only Memory It is organized as 512K words of 8 bits each Its pin-compatibility with byte-wide JEDEC EPROMs enables upgrades through
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NM27C040
304-Bit
NM27C040
304-bit
C1995
J32AQ
VA32A
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NM27C010
Abstract: No abstract text available
Text: General Description The NM27C010 is a high performance, 1,048,576-bit Electrically Programmable UV Erasable Read Only Memory. It is organized as 128K-words of 8 bits each. Its pin-compatibility with byte-wide JEDEC EPROMs enables upgrades through 8 Mbit EPROMs. The “Don’t Care” feature during read operations allows memory expansions from 1M to 8M bits with
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NM27C010
576-bit
128K-words
28-pin
ds010798
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SmD TRANSISTOR a42
Abstract: TRANSISTOR BC 136 TRANSISTOR BC 157 transistor BC 945 TRANSISTOR BC 187 SNA10A TRANSISTOR BC 413 MO-220-WGGD-2 pdf on BC 187 TRANSISTOR MO-220-WKKD-2
Text: Plastic Package Dimensional/Thermal Data The following table identifies all of the plastic package configurations and pin counts per package type offered by National Semiconductor. In addition, the table provides dimensional and thermal data for each of the plastic packages
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marking codes fairchild
Abstract: NM27C256N J28AQ FAIRCHILD SEMICONDUCTOR PRODUCT MARKING CODES J24AQ J28CQ N40A V44A VA32A J40BQ
Text: Non-Volatile Memory - EPROM Physical Dimensions Contents Tape and Reel . 2 Part Marking . 3 Package Outlines J24AQ . 4
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J24AQ
J28AQ
J28CQ
J32AQ
J40BQ
MBS28A
marking codes fairchild
NM27C256N
J28AQ
FAIRCHILD SEMICONDUCTOR PRODUCT MARKING CODES
J24AQ
J28CQ
N40A
V44A
VA32A
J40BQ
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27lc64
Abstract: 27lC256 27LC010 national semiconductor 27lc256 NM27LC512 J28CQ MBH32A C1995
Text: NM27LC512 524 288-Bit 64k x 8 Low Current CMOS EPROM General Description Features The NM27LC512 is a 64k x 8 EPROM manufactured on a proven manufacturable CMOS process consuming extremely low current in both the active and standby modes The NM27LC512 consumes a mere 30 mW making it ideal
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NM27LC512
288-Bit
NM27LC512
27lc64
27lC256
27LC010
national semiconductor 27lc256
J28CQ
MBH32A
C1995
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vjp44a
Abstract: MO-16B-AB TA11B TF11B cu50 ad 153 transistor transistor bd 905 transistor BC 185 mkt 344 MS-026-bcd
Text: Plastic Package Dimensional/Thermal Data The following table identifies all of the plastic package configurations and pin counts per package type offered by National Semiconductor. In addition, the table provides dimensional and thermal data for each of the plastic packages
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MS011798
vjp44a
MO-16B-AB
TA11B
TF11B
cu50
ad 153 transistor
transistor bd 905
transistor BC 185
mkt 344
MS-026-bcd
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NMC27C010
Abstract: eprom 27c512 27C020 27C040 27C080 27C256 27C512 C1995 NM27C010 27C256 wsi
Text: NM27C010 1 048 576-Bit 128K x 8 High Performance CMOS EPROM General Description The NM27C010 is a high performance 1 048 576-bit Electrically Programmable UV Erasable Read Only Memory It is organized as 128K-words of 8 bits each Its pin-compatibility with byte-wide JEDEC EPROMs enables upgrades through
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NM27C010
576-Bit
NM27C010
576-bit
128K-words
28-pin
20-3A
NMC27C010
eprom 27c512
27C020
27C040
27C080
27C256
27C512
C1995
27C256 wsi
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NM27LV010B
Abstract: No abstract text available
Text: General Description The NM27LV010B is a high performance Low Voltage Electrically Programmable Read Only Memory. It is manufactured using Fairchild’s latest 0.8µ CMOS split gate AMG EPROM technology. This technology allows the part to operate at speeds as fast as 250 ns over industrial temperatures
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NM27LV010B
ds012333
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93c46ln
Abstract: 93s46 eprom marking codes fairchild 24U02 93S46 eeprom FAIRCHILD SEMICONDUCTOR PRODUCT MARKING CODES F46L 24C02 code example assembly 93S46 24C02LN
Text: Non-Volatile Memory - EEPROM Physical Dimensions Contents Tape and Reel . 2 Part Marking . 3 Package Outlines M08A .
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MTC08
VBH48A
VEH64A
93c46ln
93s46 eprom
marking codes fairchild
24U02
93S46 eeprom
FAIRCHILD SEMICONDUCTOR PRODUCT MARKING CODES
F46L
24C02 code example assembly
93S46
24C02LN
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TSOP 86 Package
Abstract: MBH32A MBS28A MDA44 MDB44
Text: Thin Small Outline Package TSOP 28 Lead Molded Thin Small Outline Package NS Package Number MBS28A 1999 National Semiconductor Corporation MS101177 www.national.com Thin Small Outline Package (TSOP) May 1999 32 Lead Molded Thin Small Outline Package, EIAJ, Type I
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MBS28A
MS101177
MBH32A
MDA44
MDB44
TSOP 86 Package
MBH32A
MBS28A
MDA44
MDB44
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iso 1043-1
Abstract: DIN 6120 iso 1043-1 polypropylene j1344 sae j1344 W28B D1972 DIN6120 d24j TA11A
Text: Packing Considerations Methods, Materials and Recycling Transport Media All NSC commercial devices are prepared, inspected and packed to insure proper physical support and protection during handling, transportation and shipment. Assembled devices are packed in one or more of the following container
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MS011809-4
MS011809-1
MS011809-5
MS011809-2
MS011809-6
MS011809-3
MS011809-7
MS011809
iso 1043-1
DIN 6120
iso 1043-1 polypropylene
j1344
sae j1344
W28B
D1972
DIN6120
d24j
TA11A
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Untitled
Abstract: No abstract text available
Text: Package Number MBH32A 0.79 20.01 0,037 • 0.042 (0.95 ■ 1.06) O ~ r 0.02 T y p (12.7) 117 16 ' 0 .0 0 6 -0 .0 0 1 0 (0.15-0.25) TYP 0.72 (18.4) 0.006 (0.150)±0.08 (Leadtram e Thickness) 0.010 / ' See Detail A (0-0.25) (0.4-0.6) D ETA IL A Typical All dimensions are in inches (millimeters) unless otherwise noted
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MBH32A
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Untitled
Abstract: No abstract text available
Text: Decem ber 1994 Semiconductor NM27LV010B 1,048,576-Bit 128k x 8 Low Voltage EPROM General Description Features The N M 27LV010B is a high performance Low Voltage Elec trically Programmable Read Only Memory. It is manufac tured using National’s latest 0 .8 ju, C M O S split gate A M G
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NM27LV010B
576-Bit
27LV010B
20-3A
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NM27C010
Abstract: NM27LV010 PTFC
Text: NM27LV010 1,048,576-Bit 128k x 8 Low Voltage EPROM General Description The NM27LV010 is a high performance Low Voltage Electri cally Programmable Read Only Memory. It is manufactured using National's latest 1.2/x CMOS split gate SVG EPROM technology. This technology allows the part to operate at
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NM27LV010
576-Bit
NM27LV010
NM27C010
PTFC
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Untitled
Abstract: No abstract text available
Text: December 1994 N M 27LV010B 1,048,576-Bit 128k x 8 Low V o ltag e EPROM General Description Features The NM27LV010B is a high performance Low Voltage Elec trically Programmable Read Only Memory. It is manufac tured using National’s latest 0.8p, CMOS split gate AMGtm
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27LV010B
576-Bit
NM27LV010B
20-3A
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70.4 L marking
Abstract: No abstract text available
Text: Package Outlines Section 3 Contents Tape and R ee Part
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J28CQ
32-Lead
VA32A.
70.4 L marking
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27C010
Abstract: 27C020 NM27C040 512K x 8 High Performance CMOS EPROM 0300-040
Text: December 1995 NM27C040 4,194,304-Bit 512K x 8 High Performance CMOS EPROM General Description The NM27C040 is a high performance, 4,194,304-bit Electri cally Programmable UV Erasable Read Only Memory. It is organized as 512K words of 8 bits each. Its pin-compatibllity
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NM27C040
304-Bit
NM27C040
304-bit
27C010
27C020
512K x 8 High Performance CMOS EPROM
0300-040
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NM27LV010B
Abstract: NM27LV010BTE 12.75V PGM fairchild 5555
Text: NM27LV010B 1,048,576-Bit 128k x 8 Low Voltage EPROM S E M IC O N D U C T O R tm NM27LV010B 1,048,576-Bit (12ôk x 8) Low Voltage EPROM General Description Features The NM 27LV010B is a high performance Low Voltage Electrically Program mable Read Only Memory. It is m anufactured using
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NM27LV010B
576-Bit
NM27LV01
NM27LV010B
operati1793-856856
NM27LV010BTE
12.75V PGM
fairchild 5555
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NM27LV010B
Abstract: No abstract text available
Text: D ecem ber 1994 NM27LV010B 1,048,576-Bit 128k x 8 Low Voltage EPROM General Description Features The N M 27LV 010B is a high perform ance Low Voltage E lec trica lly Program m able Read O nly Memory. It is m anufac tured using N ational’s latest 0.8/j, C M OS split gate AMGtm
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NM27LV010B
576-Bit
NM27LV010B
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8A13
Abstract: 27C01
Text: MEMORY 5TE » • b S Q l l E b G D_b732T_7GT_ National mm Semiconductor PRELIMINARY November 1992 NM27C020 2,097,152-Bit (256K x 8) UV Erasable CMOS EPROM / General Description The NM27C020 is a high performance 2,097,152-bit EPROM. It is organized as 256 K-words of 8 bits each. Its
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NM27C020
152-Bit
152-bit
8A13
27C01
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Untitled
Abstract: No abstract text available
Text: m ic o n d u c t d r t m NM27LV010 1,048,576-Bit 128k x 8 Low Voltage EPROM General Description Features The NM27LV010 is a high perform ance Low Voltage Electrically Program mable Read O nly Memory. It is m anufactured using Fairchild’s AM G EPROM technology. This technology allows
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NM27LV010
576-Bit
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Untitled
Abstract: No abstract text available
Text: November 1994 Semiconductor N M 27LV010 1,048,576-Bit 128k x 8 Low V o ltag e EPROM General Description The NM27LV010 is a high performance Low Voltage Electri cally Programmable Read Only Memory. It is manufactured using National’s latest O.B/j, CMOS split gate AMGtm
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27LV010
576-Bit
NM27LV010
20-3A
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A15C
Abstract: MBH32A NM27LV010
Text: NM27LV010 1,048,576-Bit 128k x 8 Low Voltage EPROM S E M I C O N D U C T O R tm NM27LV010 1,048,576-Bit (12ôk x 8) Low Voltage EPROM General Description Features The NM 27LV010 is a high performance Low Voltage Electrically Program mable Read Only Memory. It is m anufactured using
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NM27LV010
576-Bit
NM27LV010
Family1793-856856
A15C
MBH32A
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