Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MBN900D45A Search Results

    SF Impression Pixel

    MBN900D45A Price and Stock

    Power Integrations 1SD312F2-MBN900D45A

    IC GATE DRVR HALF-BRIDGE MODULE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 1SD312F2-MBN900D45A Bulk
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    Power Integrations 1SP0340D2S0-MBN900D45A

    Gate Drivers ONLY for Hitachi MBN900D45A module
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 1SP0340D2S0-MBN900D45A
    • 1 $130.98
    • 10 $130.98
    • 100 $117.48
    • 1000 $117.48
    • 10000 $117.48
    		Get Quote

    Power Integrations 1SP0340V2M0-MBN900D45A

    Gate Drivers ONLY for Hitachi MBN900D45A module
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 1SP0340V2M0-MBN900D45A
    • 1 -
    • 10 $218.3
    • 100 $211.59
    • 1000 $211.59
    • 10000 $211.59
    		Get Quote

    MBN900D45A Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MBN900D45A Hitachi Semiconductor TRANS IGBT MODULE N-CH 4500V 900A Original PDF

    MBN900D45A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MBN900D45A

    Abstract: IC-900A
    Text: Spec.No.IGBT-SP-02008 R2 IGBT MODULE MBN900D45A Silicon N-channel IGBT OUTLINE DRAWING Preliminary spec. FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode.


    Original     		PDF IGBT-SP-02008 MBN900D45A 000cycles) MBN900D45A IC-900A

    Untitled

    Abstract: No abstract text available
    Text: Spec.No.IGBT-SP-02008 R5 IGBT MODULE MBN900D45A Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEATURES  High speed, low loss IGBT module.  Low driving power due to low input capacitance MOS gate.  Low noise due to ultra soft fast recovery diode.


    Original     		PDF IGBT-SP-02008 MBN900D45A 000cycles)

    MBN900D45A

    Abstract: IC-900A
    Text: IGBT MODULE Spec.No.IGBT-SP-02008 R4 MBN900D45A Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode.


    Original     		PDF IGBT-SP-02008 MBN900D45A 000cycles) MBN900D45A IC-900A

    mbm150gr12

    Abstract: MBN1200D33A C2E1 MBM300GS12A 5252 F 1002 MDN1200D33 m8nd mbm200js12ew MBM800E17D mbn1200e25c igbt
    Text: Status List Date:Sept. 2010 Compliance status of RoHS directive C:Compliant S.C:Compliant N:Non compliant Included RoHS exemption substance Production Status M:Mass production W:Working sample D:Discontinued High-Voltage High-Power Series Electrical Characteristics


    Original     		PDF MBN1200E17D MBN1600E17D MBN1800E17D KS10004 mbm150gr12 MBN1200D33A C2E1 MBM300GS12A 5252 F 1002 MDN1200D33 m8nd mbm200js12ew MBM800E17D mbn1200e25c igbt

    Untitled

    Abstract: No abstract text available
    Text: DIODE MODULE Spec.No.SR2-SP-05006 R3 P1 MDM900E45A OUTLINE DRAWING PRELIMINARY SPEC. Unit in mm FEATURES  Low noise due to soft and fast recovery diodes.  High reliability, high durability diodes.  Isolated heat sink terminal to base . CIRCUIT DIAGRAM


    Original     		PDF SR2-SP-05006 MDM900E45A

    C2E1

    Abstract: MDN1200D33 MBN1200D33A mbm150gr12 MBM300GS12A MBN1200E25C MBM500E33E2 MBM300GS12AW MBL400e MBM300GR12
    Text: ステータスリスト 2010.09 【ＲｏＨＳ対応：対応詳細は担当窓口へお問合せ下さい。 】 Ｃ：適合 Ｓ.Ｃ：適合 Ｎ：未対応 （但し適用除外項目物質を含有） 【ステータス】 Ｍ：量産品 Ｗ：ＷＳ


    Original     		PDF MBN1200E17D MBN1600E17D MBN1800E17D MBN1800E17DD MBN2400E17D MBN1200E17E 12-Fast-on KS10003 C2E1 MDN1200D33 MBN1200D33A mbm150gr12 MBM300GS12A MBN1200E25C MBM500E33E2 MBM300GS12AW MBL400e MBM300GR12

    N2M400

    Abstract: MBN1200D33A MBM300GS12AW C2E1 MBM200JS12EW MBN600C33A MBN600GS12AW MBM75GS12AW MBN1200D33C MBN1200E25C
    Text: Status List M:Mass production Date:Jul. 2005 W:Working sample KS05013 A:Abolition High-Voltage High-Power Series Absolute Maximum Ratings Connection Single Chopper Connection Diode Characteristics VCES IC PC VCE sat ton toff tf Outline Status (V) (A) (W)


    Original     		PDF KS05013 MBN800E33D MBN1200E33D MBN1200D33C MBN600C33A MBN400C33A MBN1200E25C N2M400 MBN1200D33A MBM300GS12AW C2E1 MBM200JS12EW MBN600C33A MBN600GS12AW MBM75GS12AW MBN1200D33C MBN1200E25C

    MBN900D45A

    Abstract: comparative tracking index
    Text: Spec.No.SR2-SP-05006 R3 DIODE MODULE MDM900E45A OUTLINE DRAWING PRELIMINARY SPEC. Unit in mm FEATURES ∗ Low noise due to soft and fast recovery diodes. ∗ High reliability, high durability diodes. ∗ Isolated heat sink terminal to base . CIRCUIT DIAGRAM


    Original     		PDF SR2-SP-05006 MDM900E45A MBN900D45A comparative tracking index