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    MBR20060CT Price and Stock

    GeneSic Semiconductor Inc MBR20060CT

    DIODE MOD SCHOTT 60V 200A 2TOWER
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    DigiKey MBR20060CT Bulk 80
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    Newark MBR20060CT Bulk 80
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    NAC MBR20060CT 25
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    GeneSic Semiconductor Inc MBR20060CTR

    DIODE MOD SCHOTT 60V 200A 2TOWER
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    DigiKey MBR20060CTR Bulk 80
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    NAC MBR20060CTR 25
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    Navitas Semiconductor MBR20060CT

    Diode Modules 60V 200A Schottky Recovery
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    Mouser Electronics MBR20060CT 24
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    Onlinecomponents.com MBR20060CT
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    Navitas Semiconductor MBR20060CTR

    Diode Modules 60V 200A Schottky Recovery
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    Mouser Electronics MBR20060CTR
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    MBR20060CT Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MBR20060CT America Semiconductor HIGH POWER -SCHOTTKY RECTIFIERS; IF::200A; case_package::Twin Tower Modules Original PDF
    MBR20060CT GeneSiC Semiconductor Diodes, Rectifiers - Modules, Discrete Semiconductor Products, DIODE SCHOTTKY 60V 200A 2TOWER Original PDF
    MBR20060CT Micro Commercial Components 200 Amp Rectifier 20 to 100 Volts Schottky Barrier Original PDF
    MBR20060CT America Semiconductor MBR20060 - HIGH POWER -SCHOTTKY RECTIFIERS; IF::200A; case_package::Twin Tower Modules Scan PDF
    MBR20060CT Microsemi Schottky Rectifier Scan PDF
    MBR20060CT Motorola Switchmode Datasheet Scan PDF
    MBR20060CTL Motorola European Master Selection Guide 1986 Scan PDF
    MBR20060CTR America Semiconductor HIGH POWER -SCHOTTKY RECTIFIERS; IF::200A; case_package::Twin Tower Modules Original PDF
    MBR20060CTR GeneSiC Semiconductor Diodes, Rectifiers - Modules, Discrete Semiconductor Products, DIODE SCHOTTKY 60V 200A 2TOWER Original PDF
    MBR20060CTR America Semiconductor MBR20060 - HIGH POWER -SCHOTTKY RECTIFIERS; IF::200A; case_package::Twin Tower Modules Scan PDF

    MBR20060CT Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MBR20030CTL

    Abstract: MBR20050CT MBR30050CT MBR30045CT MBR20015CTL 200CNQ030 244N MBR1605 SPD115417A fst30045
    Text: tSENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 890, REV. A Plastic Schottky Rectifier Product Catalog New Package! TO-247 Featuring: High Current/Leaded and Surface Mount Package Types SENSITRON SEMICONDUCTOR PLASTIC SCHOTTKY RECTIFIERS Contents Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3


    Original     		O-247 NQ045 403CNQ080 403CNQ100 60CNQ045SL 61CNQ045SL 62CNQ030SL 63CNQ100SL 69CNQ135SL 69CNQ150SL MBR20030CTL MBR20050CT MBR30050CT MBR30045CT MBR20015CTL 200CNQ030 244N MBR1605 SPD115417A fst30045 PDF

    Untitled

    Abstract: No abstract text available
    Text: Schottky PowerMod CPT30060 A Dim. Inches R G Baseplate A=Common Anode B Q N W Baseplate Common Cathode F U U C Baseplate D=Doubler H V Microsemi Catalog Number Industry Part Number CPT30060* MBRP20060CT MBRP30060CT E Notes: Baseplate: Nickel plated copper


    Original     		CPT30060 CPT30060* MBRP20060CT MBRP30060CT MBR20060CT MBR30060CT PDF

    MUR1560 equivalent

    Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
    Text: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in


    Original     		MBRD835L VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MUR1560 equivalent 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent PDF

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50 PDF

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


    Original     		MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45 PDF

    Diode 1N4007 DO-7 Rectifier Diode

    Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
    Text: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced


    Original     		MBRM120ET3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 Diode 1N4007 DO-7 Rectifier Diode FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode PDF

    MLED96

    Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA
    Text: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B


    Original     		ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 MLED96 BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA PDF

    MBR20045CT

    Abstract: MBR200100CT MBR20020CT MBR20030CT MBR20035CT MBR20040CT MBR20060CT MBR20080CT
    Text: DACO SEMICONDUCTOR CO., LTD. MBR20020CT A THRU MBR200100CT(A) SCHOTTKY DIODES MODULE TYPE 200A Features High Surge Capability 200Amp Rectifier 20-100 Volts Types Up to 100V VRRM TWIN TOWER A R Maximum Ratings Operating Temperature: -40 C to +175 Storage Temperature: -40 C to +175


    Original     		MBR20020CT MBR200100CT 200Amp MBR20040CT MBR20045CT MBR20080CT MBR20060CT MBR20035CT MBR20030CT PDF

    MBR20020CT(R)

    Abstract: Twin Tower 200100CT
    Text: MBR 20020C T R DACO SEMICONDUCTOR CO., LTD. MBR 200100CT(R) T HRU SCHOTTKY DIODE MODULE TYPES 200A Features 200Amp Rectifier 20-100 Volts High Surge Capability Types Up to 100V VRRM Twin Tower Maximum Ratings A R Operating Temperature: -55 C to+150 Sto rage Temperatur: -55 C to +150


    Original     		20020C 200100CT 200Amp MBR20020CT MBR20030CT MBR20035CT MBR20045CT MBR20060CT MBR20040CT MBR20080CT MBR20020CT(R) Twin Tower PDF

    MBR140P

    Abstract: 1N5819 SS14 1N5822 SS34 mbr370 MBR170 1N5822 ss24 motorola SB5100 CROSS REFERENCE LIST MBR30050CT MBR180
    Text: Schottky Cross Reference List FAIRCHILD SEMI 1N5818 1N5819 1N5822 BAT54 BAT54A BAT54C BAT54S FMKA140 FMKA140 FYP1504DN FYP2004DN FYP2006DN MBR1035 MBR1045 MBR1535CT MBR1545CT MBR1635 MBR1645 MBR2035CT MBR2045CT MBR2060CT MBR2535CT MBR2545CT MBR3035PT MBR3045PT


    Original     		1N5818 1N5819 1N5822 BAT54 BAT54A BAT54C BAT54S FMKA140 FYP1504DN MBR140P 1N5819 SS14 1N5822 SS34 mbr370 MBR170 1N5822 ss24 motorola SB5100 CROSS REFERENCE LIST MBR30050CT MBR180 PDF

    Untitled

    Abstract: No abstract text available
    Text: MBR20045CT thru MBR200100CTR Silicon Power Schottky Diode VRRM = 20 V - 100 V IF = 200 A Features • High Surge Capability • Types up to 100 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed


    Original     		MBR20045CT MBR200100CTR MBR20045CT MBR20060CT MBR20080CT MBR200100CT PDF

    MBR200100CT

    Abstract: MBR20020CT MBR20030CT MBR20035CT MBR20040CT MBR20045CT MBR20060CT MBR20080CT
    Text: Transys MBR20020CT A THRU MBR200100CT(A) Electronics L I M I T E D SCHOTTKY DIODES MODULE TYPE 200A Features High Surge Capability 200Amp Rectifier 20-100 Volts Types Up to 100V VRRM TWIN TOWER A R Maximum Ratings Operating Temperature: -40 C to +175 Storage Temperature: -40 C to +175


    Original     		MBR20020CT MBR200100CT 200Amp MBR20035CT MBR20030CT MBR20040CT MBR20045CT MBR20060CT MBR20080CT PDF

    stpr16

    Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
    Text: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •


    Original     		MURB1620CT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 stpr16 MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode PDF

    b2545 transistor

    Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
    Text: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection


    Original     		MBR2535CT, MBR2545CT MBR2545CT B2535, B2545 VHE205 VHE210 VHE215 VHE220 VHE2401 b2545 transistor TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface PDF

    Untitled

    Abstract: No abstract text available
    Text: MBR20045CT thru MBR200100CTR Silicon Power Schottky Diode VRRM = 20 V - 100 V IF = 200 A Features • High Surge Capability • Types up to 100 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed


    Original     		MBR20045CT MBR200100CTR MBR20045CT MBR20060CT MBR20080CT MBR200100CT PDF

    MUR1560 equivalent

    Abstract: 1N4936 equivalent MUR1100E equivalent 1N5404 equivalent MUR620CT equivalent mur420 equivalent MUR1620CT equivalent BYV19-45 MUR1660CT equivalent MUR1520 equivalent
    Text: Index and Cross Reference The following table represents an index and cross reference guide for all rectifier devices which are either manufactured directly by ON Semiconductor or for which ON Semiconductor manufactures a suitable equivalent. Where the ON


    Original     		MR852 VHE1401 VHE1402 VHE1403 VHE1404 VHE205 VHE210 MUR1560 equivalent 1N4936 equivalent MUR1100E equivalent 1N5404 equivalent MUR620CT equivalent mur420 equivalent MUR1620CT equivalent BYV19-45 MUR1660CT equivalent MUR1520 equivalent PDF

    mur1650

    Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
    Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and


    Original     		MBRB1045 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 mur1650 T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount PDF

    MBR20050CT

    Abstract: MBR20045CT
    Text: MO TO R O L A SC D I O D E S / O P T O b4E D tj3b72SS G0fib371 7D4 • M O T ? MBR20035CT MBR20045CT MBR20050CT MBR20060CT MOTOROLA SEMICONDUCTOR TECHNICAL DATA SCHOTTKY BARRIER RECTIFIERS 200 AMPERES 35 to 60 VOLTS SWITCHMODE POWER RECTIFIERS . using the Schottky Barrier principle with a platinum barrier


    OCR Scan     		tj3b72SS G0fib371 MBR20035CT MBR20045CT MBR20050CT MBR20060CT 357C-03 MBR20050CT, PDF

    CPT30060

    Abstract: MBR20060CT MBR30060CT MBRP20060CT MBRP30060CT
    Text: Schottky PowerMod CPT30060 Dim . Inches V Min. Baseplate A=Common Anode U t H h 1 fi rr^ i / \ F I " I - ¥ h1 Baseplate Common Cathode u , — r °N | N° n _ L ‘ -A Baseplate D=Doubler Notes: Baseplate: Nickel plated copper Microsemi Catalog Number


    OCR Scan     		CPT30060 CPT30060 MBR20060CT MBR30060CT MBRP20060CT MBRP30060CT PDF

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


    OCR Scan     		SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845 PDF

    20N15

    Abstract: 35n05 mje13002 to92 ur3060 AN803 motorola 2N6823 isolated dc-dc mc34063 mje12007 Motorola Switchmode 1 special
    Text: C O N TE N TS Page What Everyone Should Know About Switching Power Supplies In tro du ctio n. Comparison w ith Linear Regulations.


    OCR Scan     		PDF

    bys75-50

    Abstract: MBR20030CTL mbr6535 357B-01 MBR6545 BYS75-45 MBR20020CTL BYS75-30 MBR12035CT MBR20035CT
    Text: SCHOTTKY RECTIFIERS continued l0, AVERAGE FORWARD RECTIFIED CURRENT (A) 80 75 65 120 ^ J ' MBR20020CTL* 20 30 35 # Power Tap * D 05 VRR M »00 357B-01 Plastic 257-01 C A SE 200 MBR20030CTL* BYS75-30* MBR6535 MBR7535 MBR8035 MBR12035CT MBR20035CT MBR30035CT


    OCR Scan     		357B-01 MBR20020CTL* BYS75-30* MBR20030CTL* MBR6535 MBR7535 MBR8035 MBR12035CT MBR20035CT MBR30035CT bys75-50 MBR20030CTL mbr6535 MBR6545 BYS75-45 MBR20020CTL BYS75-30 PDF

    CPT30060

    Abstract: MBR20060CT MBR30060CT MBRP20060CT MBRP30060CT 100-01A
    Text: Schottky PowerMod CPT30060 ¥ Dim . In ch es Min. Baseplate A=Common Anode I H iz t z V Baseplate Common Cathode T4 _L o-Nd=i: -A TT E Notes: I Baseplate D=Doubler A B C E F G H N Q R U V W Max. -3.630 0.700 0.800 -0.630 0.120 0.130 0.490 0.510 1.375 BSC


    OCR Scan     		CPT30060 CPT30060* CPT30060 MBR20060CT MBR30060CT MBRP20060CT MBRP30060CT 100-01A PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC 160 A M PERE SCHO I I K Y I POWERMOD 20 30 35 40 45 60 80 100 FST16020 FST16030 FST16035 FST16040 FST16045 FST16060 FST16080 FST160100 160 160 160 160 160 160 160 160 115 115 115 115 115 115 115 115 Package Outline Pg. A-11 1200 1200 1200 1200 1200 1200


    OCR Scan     		FST16020 FST16030 FST16035 FST16040 FST16045 FST16060 FST16080 FST160100 FST19035 FST19040 PDF