B3817
Abstract: B39211-B3817-Z710 C61157-A7-A49
Text: SAW Components Data Sheet B3817 SAW Components B3817 Low-Loss Filter 208,0 MHz Data Sheet Ceramic package QCC10B Features ● ● ● ● IF low-loss filter for W-CDMA base station Temperature stable Usable bandwidth 3,84 MHz Ceramic SMD package Terminals
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B3817
QCC10B
B39211-B3817-Z710
C61157-A7-A49
B3817
B39211-B3817-Z710
C61157-A7-A49
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5610 oc
Abstract: No abstract text available
Text: MC5610 thru MC5619 FAST RECOVERY, HIGH POWER, MICRO HIGH VOLTAGE RECTIFIERS Available on commercial versions DESCRIPTION The MC5610 through MC5619 series of fast recovery high voltage silicon rectifiers feature the smallest packages available. They are ideal for high-reliability where a failure cannot be
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MC5610
MC5619
MC5619
T4-LDS-0267,
5610 oc
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Untitled
Abstract: No abstract text available
Text: MC5610 thru MC5619 FAST RECOVERY, HIGH POWER, MICRO HIGH VOLTAGE RECTIFIERS Available DESCRIPTION The MC5610 through MC5619 series of fast recovery high voltage silicon rectifiers feature the smallest packages available. They are ideal for high-reliability where a failure cannot be
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MC5610
MC5619
MC5619
T4-LDS-0267,
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mosfet 300V 10A
Abstract: 300v 10 amp n-channel mosfet
Text: SENSITRON SEMICONDUCTOR SHD225608 TECHNICAL DATA DATA SHEET 915, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: 600 Volt, 20 Amp, 0.35 Ohm MOSFET Isolated and Hermetically Sealed MAXIMUM RATINGS RATING GATE TO SOURCE VOLTAGE CONTINUOUS DRAIN CURRENT
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SHD225608
250mA
SHD225608
O-254
mosfet 300V 10A
300v 10 amp n-channel mosfet
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shd225502
Abstract: shd2259
Text: SHD225502 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 223, REV A Former part number SHD2259 HERMETIC POWER MOSFET N-CHANNEL FEATURES: 100 Volt, .07 Ohm, 30A MOSFET Isolated Hermetic Metal Package Fast Switching Low RDS on Equivalent to IRFM150
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SHD2259
SHD225502
IRFM150
O-254
O-254
shd225502
shd2259
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Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR 2N7224 TECHNICAL DATA DATA SHEET 161, REV see also data sheet 766 HERMETIC POWER MOSFET N-CHANNEL FEATURES: 100 Volt, 0.07 Ohm MOSFET Isolated and Hermetically Sealed Simple Drive Requirements Repetitive Avalanche Rating
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2N7224
O-254
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shd225405
Abstract: diode 250V 250mA
Text: SENSITRON SEMICONDUCTOR SHD225405 TECHNICAL DATA DATA SHEET 4011, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: 500 Volt, 0.85, Ohm, 5.5Amp MOSFET Isolated Hermetically Sealed MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25C UNLESS OTHERWISE SPECIFIED.
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SHD225405
10Vsales
O-254
shd225405
diode 250V 250mA
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Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD225615 TECHNICAL DATA DATA SHEET 4167, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: 400 Volt, .20 Ohm, 23A MOSFET Isolated Hermetic Metal Package Fast Switching Low RDS on Similar to IRFM360 MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPECIFIED.
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SHD225615
IRFM360
O-254
O-254
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Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR 2N7236 TECHNICAL DATA DATA SHEET 586, REV - HERMETIC POWER MOSFET P-CHANNEL FEATURES: -100 Volt, 0.20 Ohm MOSFET Isolated and Hermetically Sealed Simple Drive Requirements Repetitive Avalanche Rating MAXIMUM RATINGS RATING
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2N7236
O-254
O-254
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Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD225413 TECHNICAL DATA DATA SHEET 693, REV. - HERMETIC POWER MOSFET N-CHANNEL PRELIMINARY DESCRIPTION: 30 VOLT, 35 AMP, 0.012 OHM MOSFET IN A HERMETIC TO-254 PACKAGE. MAXIMUM RATINGS RATING GATE TO SOURCE VOLTAGE CONTINUOUS DRAIN CURRENT
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SHD225413
O-254
250mA
SHD225413
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shd225452
Abstract: IRF52
Text: SENSITRON SEMICONDUCTOR SHD225452 TECHNICAL DATA DATA SHEET 4102, REV. - HERMETIC POWER MOSFET P-CHANNEL FEATURES: -100 Volt, 0.07 Ohm, -34A MOSFET Fast Switching Low RDS on Electrically Equivalent to IRF5210 Add an “S” to the end of the part number for S-100 screening, SHD225452S
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SHD225452
IRF5210
S-100
SHD225452S
SHDC225452
SHD225452
O-254
IRF52
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Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD225515 TECHNICAL DATA DATA SHEET 2027, REV. A HERMETIC POWER MOSFET N-CHANNEL DESCRIPTION: A 600 VOLT, 16 AMP, 0.40 OHM MOSFET IN A HERMETIC TO-254 PACKAGE. MAXIMUM RATINGS RATING GATE TO SOURCE VOLTAGE CONTINUOUS DRAIN CURRENT ALL RATINGS ARE AT TA = 25C UNLESS OTHERWISE SPECIFIED.
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SHD225515
O-254
250mA
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MC5616
Abstract: MC5610 MC5613 MC5615 MC5619 MCE 2000
Text: MC5610 thru MC5619 Microsemi Corp. 'C th e c liod f experts SANTA ANA. CA j l o r m o r e in lo r m a t i o n c a ll: SC O TTSD A LE, A Z / 714 9 7 9 -8 2 2 0 FAST RECOVERY HIGH POWER MICRO HIGH VOLTAGE FE A T U R E S • • • • • • • M on olithic v o id le ss c o n stru c tio n .
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MC5610
MC5619
979-X220
MC5610
MC5619
MIL-S-19500.
MC5610-MC5612.
Cto150Â
MC5613-MC5616.
MC5616
MC5613
MC5615
MCE 2000
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MC5610
Abstract: MC5619
Text: MC5610 MC5619 fîîK ^ îM Microsemi Corp. FAST RECO VERY HIGH POW ER M IC R O H IG H VOLTAGE R EC T IF IER S FEATURES • Monolithic voidiess construction. • Triple layer passivation. • Lowest reverse leakage. • Smallest package available. • Lowest thermal resistance.
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MC5610
-MC5619
MC5619
MIIL-S-19500.
Stati25mA
MC5610-MC5612.
Cto150Â
MC5613-MC5616.
MC5617-MC5619.
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Untitled
Abstract: No abstract text available
Text: Page 38 Thick Film Resistor Networks Single Inline Package -R /2 R Ladder SEI Type MC ; ‘“ S tL * • Black Body Color, Conformai Coating PERFORMANCE CHARACTERISTICS ELECTRICAL . Power Rating Watts Derated to 0 Load at Maximum Working Voltage Operating Temperature Range
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200ppm/
50ppm
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mazda pentode 46
Abstract: SIEMENS EDISON SWAN pentode
Text: EDISWAN MAZDA 6FI HIGH SLOPE SCREENED R.F. PENTODE Indirectly heated— for parallel operation REPLA CEM EN T TYPE RATING Heater Voltage volts Heater Current (amps) Maximum Anode Voltage (volts) Maximum Screen Voltage (volts) Mutual Conductance (mA/V) Maximum Anode Dissipation (watts)
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Va-250
mazda pentode 46
SIEMENS EDISON SWAN pentode
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Untitled
Abstract: No abstract text available
Text: 16011 Foothill Boulevard Irwindale. C A 91700 Tel: 8 IS 969-1315 FAX: (8 1 8 )969-0965 EIC Semiconductor, Inc, The plaltic m aterial citric* U /L recognition 94V -0. Nominal Zener Voilage TYPE Vz@Lrt 00 Izt (mA) Maximum Zen ct Impedance Zn&bx Zzkaizk (O)
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2E104
Abstract: E104K SH-E 878
Text: Polypropylene Capacitor Plastic Film Wrap, Epoxy End Fill Type PT12 T yp e P T12 p o lyp rop ylene precision cap a cito rs w hich e xh ib it unique and o u ts ta n d in g e le c tric a l and e n viro n m e n ta l ch a ra c te ris tic s . The fo llow in g are som e o f the m ost significa nt:
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marconi
Abstract: marconi company
Text: ACT 9/M AY 1957 arconi V Triode Type ACT 9 H F POW ER A M PLIFIER AND OSCILLATOR General. An air-cooled transmitting triode fitted with a tungsten filament, suitable for use at frequencies up to 80 Mc/s. The figures quoted for maximum permissible ratings apply to operation at frequencies up to 15 Me/s.
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MC 790 P
Abstract: No abstract text available
Text: 3 4 T H I S DRAWING 7 R E L E A S E D FOR P U B L I C A T I O N I S U N P U B L IS H E D . CO PYRIGHT 19 BY AMP INCORPORATED. 2 ,19 LOC AL L R IG H T S R E S E R V E D . D IST REVISIONS 50 AF DESCRIPTION LTR REV PER 0G3A-0438-01 DATE DWN APVD 30JULO' JR
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0G3A-0438-01
30JULO'
08JUNOO
JUN97
/home/ampl3469/edmmod
MC 790 P
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k192a
Abstract: c2458 C2498 C2668 C2717 C1923 Y C2499 k710 K241 C2995
Text: ALPHANUMERICAL INDEX Type No. Marking Page Type No. Marking 1SS154 BA 105 1SV217 T6 175 1SS239 SI 107 1SV224 T7 177 1SS241 TY 109 1SV225 V3 179 1SS242 S2 111 1SV226 TA 181 1SS268 BF 113 1SV227 T9 183 1SS269 BG 115 1SV228 V4 185 1SS271 BD 117 1SV229 T8 188
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1SS154
1SS239
1SS241
1SS242
1SS268
1SS269
1SS271
1SS295
1SS312
1SS313
k192a
c2458
C2498
C2668
C2717
C1923 Y
C2499
k710
K241
C2995
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ACT28
Abstract: marconi company marconi
Text: A FORCED-AIR COOLED DISC SEAL PULSE O SC ILLA T O R TRIODE ACT28A ISSUE 1 The ACT28Ais a triode with an indirectly heated oxide coated cathode intended for use as an oscillator at frequencies up to 600Mc/s under pulsed or c.w. conditions. A pulse output of about 300kW per valve is attainable at 220Mc/s.
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ACT28A
ACT28Ais
600Mc/s
300kW
220Mc/s.
150cu
ACT28
marconi company
marconi
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IRF9640
Abstract: IRF1S9640 IIRF9640 IRF9643 IRF9642 IRF9641
Text: HARRIS S E M IC O N D U C T O R IRF9640, IRF9641, IRF9642, IRF9643, RF1S9640, RF1S9640SM -9A and -11A, -150V and -200V, 0.5 and 0.7 Ohm, P-Channel Power MOSFETs December 1997 Features Description • -9A and -11 A, -150V and -200V These are P-Channel enhancement mode silicon-gate
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IRF9640,
IRF9641,
IRF9642,
IRF9643,
RF1S9640,
RF1S9640SM
-150V
-200V,
TA17522.
IRF9640
IRF1S9640
IIRF9640
IRF9643
IRF9642
IRF9641
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GP150MHB16S
Abstract: No abstract text available
Text: Si GEC PLESSEY S E M I C O N D U C T O R S DS4131-5.2 G P 1 5 M H B 1 6 S POWERLINE N-CHANNELIGBT MODULE APPLICATIONS TYPICAL KEY PARAMETERS VCES 1600V 3.3V CEfsat 150 A ^qCO NT) 300A ^qPK ) 270ns tr 590ns t, v • High Power Switching. ■ Motor Control.
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DS4131-5
270ns
590ns
44lbs
70lbs
88lbs
18lbs
1500g
GP150MHB16S
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