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Catalog Datasheet	MFG & Type	PDF	Document Tags
2052-1215-00 Abstract: NE622M04 rf ic 3358 2052-1215 AN1037 NE662M04 MCH185A121JK MCH185A4R7CK NE662M04-EVAL transistor c 6093 Text: California Eastern Laboratories APPLICATION NOTE AN1037 Optimizing a Silicon Bipolar LNA Performance for Blue Tooth Applications Abstract The NE662M04 is NEC's latest generation of Silicon Bipolar junction RF-transistor, using a state-of-the-art UHSO 25 GHz fT wafer process. It provides excellent low voltage/low	Original	PDF	AN1037 NE662M04 2052-1215-00 NE622M04 rf ic 3358 2052-1215 AN1037 MCH185A121JK MCH185A4R7CK NE662M04-EVAL transistor c 6093
FERRITE BEAD 1000 OHM 0805 Abstract: HB-1H2012 CFB0301 CFB0301-000T PB-CFB0301 HB-1H2012-260JT Text: CFB0301 hŒŠ‹@d ”„“Œ†@r„”Šˆ@l•žMn•Œ ˆ@g„a™@fet mŒ“ŒŸ@b˜•„‡…„”‡L@i”†N@QPWYU@r•†‘’ˆ @r‡NL@h•›™š•”L@tˆŸ„™@WWPYY †•“	Original	PDF	CFB0301 CFB0301 FERRITE BEAD 1000 OHM 0805 HB-1H2012 CFB0301-000T PB-CFB0301 HB-1H2012-260JT
HB-1H2012-260JT Abstract: rcwp-575 CFB0301 PB-CFB0301 list japanese fet 4600 fet transistor CFB0301-000T MCH185A102JK celeritek Text: High Dynamic Range Low Noise GaAs FET CFB0301 August 2006 - Rev 03-Aug-06 Features Low-Noise Figure from 0.8 to 2.0 GHz High Gain High Intercept Point Highly Stable Easily Matched to 50 70 mil Package Applications Cellular Base Stations PCS Base Stations Industrial Data Networks	Original	PDF	CFB0301 03-Aug-06 CFB0301 CFB0301-000T PB-CFB0301 HB-1H2012-260JT rcwp-575 PB-CFB0301 list japanese fet 4600 fet transistor CFB0301-000T MCH185A102JK celeritek
HB-1H2012-260JT Abstract: CFB0301 PB-CFB0301 DALE T2 HB-1H2012 CFB0301-000T of GaAs MESFET amplifier High IP3 Low-Noise Amplifier Text: CFB0301 Product Specifications June 2002 High Dynamic Range Low-Noise GaAs FET 1 of 3 Features ❏ Low-Noise Figure from 0.8 to 2.0 GHz ❏ High Gain ❏ High Intercept Point ❏ Highly Stable ❏ Easily Matched to 50Ω ❏ 70 mil Package Applications ❏ Cellular Base Stations	Original	PDF	CFB0301 CFB0301 HB-1H2012-260JT PB-CFB0301 DALE T2 HB-1H2012 CFB0301-000T of GaAs MESFET amplifier High IP3 Low-Noise Amplifier
HB-1H2012-260JT Abstract: High IP3 Low-Noise Amplifier ferrite B21 c3039 resistor 8,2 ohm LL2012-F8NK CFB0301-000T Text: CFB0301 Product Specifications September 1996 High Dynamic Range Low-Noise GaAs FET 1 of 3 Features ❏ Low-Noise Figure from 0.8 to 2.0 GHz ❏ High Gain ❏ High Intercept Point ❏ Highly Stable ❏ Easily Matched to 50Ω ❏ 70 mil Package Applications	Original	PDF	CFB0301 CFB0301 HB-1H2012-260JT High IP3 Low-Noise Amplifier ferrite B21 c3039 resistor 8,2 ohm LL2012-F8NK CFB0301-000T