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ROHM Semiconductor MCH185A1R2CK CAP,CERAMIC,1.2PF,50VDC,.25-PF TOL,.25+PF TOL,C0G-TC CODE,-30,30PPM-TC
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Quest Components	MCH185A1R2CK		79,947			1 $0.0264 10 $0.0264 100 $0.0264 1000 $0.0264 10000 $0.005	Buy Now

MCH185A1R2C Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MCH185A1R2CK		ROHM	Ceramic Capacitors, Capacitors, CAP CER 1.2PF 50V NP0 0603		Original	PDF

MCH185A1R2C Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: SXB-2089Z SXB-2089Z 5MHz to 2500MHz Medium Power InGaP/GaAs HBT Amplifier 5MHz to 2500MHz MEDIUM POWER InGaP/GaAs HBT AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free Package: SOT-89 Product Description Features RFMD’s SXB-2089Z amplifier is a high linearity InGaP/GaAs Heterojunction Bipolar Transistor HBT MMIC housed in a low-cost, surface-mountable plastic package. These amplifiers are specially designed for use as	Original	SXB-2089Z 2500MHz 2500MHz OT-89 SXB-2089Z PSF-S01-1mm EEF-101407 ECB-102925-B	PDF
MCH185C332K Abstract: MCH155F103Z mch184cn224k MCH153F104Z Text: Multi Layer Ceramic Chip Capacitors MCH15 Series 1005(0402 Size), MCH18 Series (1608(0603) Size) Barrier layer and end terminations to improve solderability. These capacitors are suitable for flow and reflow soldering and can be used in various applications.	Original	MCH15 MCH18 MCH185C332K MCH155F103Z mch184cn224k MCH153F104Z	PDF
MCR03J102 Abstract: MCR03J102 MCH185A150J MCR03J102 resistor SGA-8343 CL10B104KONC sga8343 samsung bluetooth sige an-061 sga8343z Text: AN RFMD APPLICATION NOTE SGA-8343 GPS Application Circuits RFMD Worldwide Applications Design Application Note - AN-061 Abstract RFMD’s SGA-8343 is a high performance SiGe amplifier designed for operation from DC to 6GHz. This application note illustrates application circuits for GPS Global Positioning System frequency band (1575MHz). The first application circuit is optimized for noise performance; the second one is optimized for input return loss. Introduction The application circuits were	Original	SGA-8343 AN-061 1575MHz) MCR03J102 MCR03J102 MCH185A150J MCR03J102 resistor CL10B104KONC sga8343 samsung bluetooth sige an-061 sga8343z	PDF
MCH315A180J Abstract: MCH215A221J MCH315A100D MCH185A220J MCH215A680J MCH155A270J MCH215A220J MCH185A100D MCH185A2R2C MCH215A471J Text: 1/2 C L A S S I C 0 G M U LT I L AY E R C E R A M I C C A PA C I T O R S MCH SERIES • CLASS I, TEMPERATURE COMPENSATED: C0G • CLASS II, HIGH DIELECTRIC CONSTANT: X7R & Y5V. Z5U ALSO AVAILABLE MCH SERIES SPECIFICATIONS Parameter Temperature range Temp. coefficients	Original	30ppm/ with61J 560pF MCH315A681J 680pF MCH315A821J 820pF MCH315A102J MCH315A122J MCH315A152J MCH315A180J MCH215A221J MCH315A100D MCH185A220J MCH215A680J MCH155A270J MCH215A220J MCH185A100D MCH185A2R2C MCH215A471J	PDF
mch185cn153k Abstract: MCH184FN105Z MCH185A101J MCH155A221J MCH155F103Z MCH18 MCH185A150J MCH153F104Z MCH185A470J f103z Text: Multi Layer Ceramic Chip Capacitors MCH15 Series 1005(0402 Size), MCH18 Series (1608(0603) Size) Barrier layer and end terminations to improve solderability. These capacitors are suitable for flow and reflow soldering and can be used in various applications.	Original	MCH15 MCH18 12please 4316B mch185cn153k MCH184FN105Z MCH185A101J MCH155A221J MCH155F103Z MCH185A150J MCH153F104Z MCH185A470J f103z	PDF
SGA8343Z Abstract: MCR03*J102 SGA8343ZSR SGA-8343Z EVB1 1608-FS3N9S lot code RFMD MCH185A150J MCR03J5R1 toko 10k series Text: SGA8343Z SGA8343ZLow Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to	Original	SGA8343Z SGA8343ZLow OT-343 SGA8343Z DS100909 SGA8343Z-EVB4 1575MHz MCR03*J102 SGA8343ZSR SGA-8343Z EVB1 1608-FS3N9S lot code RFMD MCH185A150J MCR03J5R1 toko 10k series	PDF
Untitled Abstract: No abstract text available Text: SGA8343Z SGA8343ZLow Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to	Original	SGA8343Z SGA8343ZLow OT-343 SGA8343Z DS110620 SGA8343Z-EVB4 1575MHz	PDF
TAJB105KLRH Abstract: No abstract text available Text: Preliminary SXB-2089Z Product Description Sirenza Microdevices’ SXB-2089Z amplifier is a high linearity InGaP/ GaAs Heterojunction Bipolar Transistor HBT MMIC housed in a low-cost, surface-mountable plastic package. 5-2500 MHz Medium Power InGaP/GaAs HBT Amplifier	Original	SXB-2089Z SXB-2089Z 43dBm 24dBm AN075 EDS-104625 TAJB105KLRH	PDF
MCH185C122KK Abstract: SGA-9089Z AN080 SGA-9089 MCH185A390JK MCH185A4R7CK ML200C 101216 LL1608-FS4N7S MCH185A5R6CK Text: Design Application Note - AN-080 SGA-9089Z Amplifier Application Circuits Design Considerations and Trade-offs -Biasing Techniques Abstract Sirenza Microdevices’ SGA-9089Z is a high performance SiGe amplifier designed for operation from 50 MHz to 3.0 GHz. This application note illustrates application circuits	Original	AN-080 SGA-9089Z 2440MHz EAN-105081 MCH185C122KK AN080 SGA-9089 MCH185A390JK MCH185A4R7CK ML200C 101216 LL1608-FS4N7S MCH185A5R6CK	PDF
CL10B104KONC Abstract: AN022 MCH185A220JK la 4440 amplifier circuit diagram 300 watt MCH185A390JK MCH185A100DK MCH185A4R7CK SGA-9289 Sirenza amplifier SOT-89 MCR03J200 Text: Design Application Note - AN022 SGA-9289 Amplifier Application Circuits Abstract Sirenza Microdevices’ SGA-9289 is a high performance SiGe amplifier designed for operation from DC to 3500 MHz. This application note illustrates several application circuits for key frequency bands in the	Original	AN022 SGA-9289 EAN-101535 CL10B104KONC AN022 MCH185A220JK la 4440 amplifier circuit diagram 300 watt MCH185A390JK MCH185A100DK MCH185A4R7CK Sirenza amplifier SOT-89 MCR03J200	PDF
55117 inductor Abstract: eic 4191 cdi schematics pcb ACPR2 169901 1 micro farad capacitor cdi schematic cdi schematics 78364 104914 Text: PRELIMINARY DATA SHEET ECG013 BROADBAND HIGH OIP3 AMPLIFIER DC - 2500 MHz Features Applications 500 to 2500 MHz 45 dBm Typical OIP3 at 1960 MHz Highly Reliable InGaP HBT 15.0 dB Typical Gain at 1900 MHz 25.5 dBm Typical P1dB at 1960 MHz Excellent Stability	Original	ECG013 ECG013 SS-000044-000 55117 inductor eic 4191 cdi schematics pcb ACPR2 169901 1 micro farad capacitor cdi schematic cdi schematics 78364 104914	PDF
MCH185A050c Abstract: MCH155A240J MCH185A101J MCH185CN153 MCH155A121J MCH155C471K MCH185A220J MCH185C472K MCH155A100D MCH185A330J Text: 積層セラミックチップコンデンサ／Multi Layer Ceramic Chip Capacitors MCH15 Series（1005 Size）MCH18 Series（1608 Size）はんだ喰われ防止に、効果的なバリア層に優れたはんだ付け性のコーティング処理を施した電極構造を採用。	Original	MCH15 MCH18 MCH15 1005size MCH18 1608size 110pF 4316D MCH185A050c MCH155A240J MCH185A101J MCH185CN153 MCH155A121J MCH155C471K MCH185A220J MCH185C472K MCH155A100D MCH185A330J	PDF
ECG015B Abstract: MCR10JW000 ROHM SOT89 MARKING ECG015 marking 0603 CAPACITOR HP RF amplifier SOT-89 Text: DATA SHEET ECG015 BROADBAND HIGH OIP3 AMPLIFIER 1800 - 2500 MHz Features Applications 1800 to 2500 MHz Highly Reliable InGaP HBT Excellent Stability Multi-carrier Systems High Linearity Amplifiers Cellular, PCS, WLL Package Available -B SOT-89	Original	ECG015 OT-89 ECG015 OT-89 AP-000145-000 AP-000192-000 AP-000194-000 AP-000487-000 ECG015B MCR10JW000 ROHM SOT89 MARKING ECG015 marking 0603 CAPACITOR HP RF amplifier SOT-89	PDF
MCR03J102 Abstract: CL10B104KONC MCR03J102 resistor sige an-061 LL1608-FS39NJ SGA-8343 MCH185A2R2C AN-044 Text: Design Application Note - AN-061 SGA-8343 GPS Application Circuits Abstract Sirenza Microdevices’ SGA-8343 is a high performance SiGe amplifier designed for operation from DC to 6 GHz. This application note illustrates application circuits for GPS Global Positioning System frequency band (1575 MHz). The first application circuit	Original	AN-061 SGA-8343 EAN-103201 MCR03J102 CL10B104KONC MCR03J102 resistor sige an-061 LL1608-FS39NJ MCH185A2R2C AN-044	PDF

SHF-0289 Abstract: MCH185CN102KK AN032 TMC1DB106KLRH AN-032 GaAs FET amplifer H H L C9 MCH185A390JK ML200C LL1608-FS4N7S Text: DESIGN APPLICATION NOTE - AN-032 SHF-0289 Amplifier Application Circuits Abstract Design Considerations and Trade-offs Sirenza Microdevices’ SHF-0289 is a high performance AlGaAs/GaAs Heterostructure FET HFET housed in a low-cost surface-mount plastic package. The HFET	Original	AN-032 SHF-0289 EAN-101799 MCH185CN102KK AN032 TMC1DB106KLRH AN-032 GaAs FET amplifer H H L C9 MCH185A390JK ML200C LL1608-FS4N7S	PDF
CL10B104KONC Abstract: MCR03J100 MCH185A4R7CK AN021 MCR03*J100 MCH185A390JK SGA-9189 Sirenza amplifier SOT-89 ECB-102216-B AN-021 Text: Design Application Note - AN021 SGA-9189 Amplifier Application Circuits Abstract Sirenza Microdevices’ SGA-9189 is a high performance SiGe amplifier designed for operation from DC to 3500 MHz. This application note illustrates several application circuits for key frequency bands in the	Original	AN021 SGA-9189 EAN-101534 CL10B104KONC MCR03J100 MCH185A4R7CK AN021 MCR03*J100 MCH185A390JK Sirenza amplifier SOT-89 ECB-102216-B AN-021	PDF
SGA-8343Z Abstract: samsung cl SGA8343Z SOT343 lna MICROWAVE DEVICES GaAs pHEMT LOW SOT-343 Text: SGA8343Z SGA8343ZLow Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to	Original	SGA8343ZLow SGA8343Z OT-343 SGA8343Z DS110205 SGA8343Z-EVB4 1575MHz SGA-8343Z samsung cl SOT343 lna MICROWAVE DEVICES GaAs pHEMT LOW SOT-343	PDF
mch185C102kk Abstract: MCR10JW000 cdi schematics pcb cdi schematics capacitor 0603 0603 CAPACITOR cdi schematic MCH185A180JK resistor 2512 ROHM capacitor Text: DATA SHEET ECG015 BROADBAND HIGH OIP3 AMPLIFIER 1800 - 2500 MHz Application Note: Reduction of Out of Band Gain By changing C4 the input coupling/blocking capacitor to 2.2pF from the 56pF, the out of band gain can be reduced to less than 12dB at 300MHz. The following BOM and schematics for 1.9	Original	ECG015 300MHz. 14GHz 14GHz 45GHz 1000pF CH185A010CK N0R7C500NT MD-000290-000 mch185C102kk MCR10JW000 cdi schematics pcb cdi schematics capacitor 0603 0603 CAPACITOR cdi schematic MCH185A180JK resistor 2512 ROHM capacitor	PDF
TAJB105KLRH Abstract: SXB-2089Z MCH185A220J PSF-S01 marking c7 sot-89 Text: SXB-2089Z SXB-2089Z 5MHz to 2500MHz Medium Power InGaP/GaAs HBT Amplifier 5MHz to 2500MHz MEDIUM POWER InGaP/GaAs HBT AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SXB-2089Z amplifier is a high linearity InGaP/GaAs Heterojunction Bipolar Transistor HBT MMIC housed in a low-cost, surface-mountable plastic package. These amplifiers are specially designed for use as	Original	SXB-2089Z 2500MHz 2500MHz OT-89 SXB-2089Z PSF-S01-1mm EEF-101407 ECB-102925-B TAJB105KLRH MCH185A220J PSF-S01 marking c7 sot-89	PDF
sot 23 S01 Abstract: SXB-2089 TAJB105KLRH SXB-2089Z MCH185A1R8CK AN-078 43ACP Text: Preliminary SXB-2089Z Product Description Sirenza Microdevices’ SXB-2089Z amplifier is a high linearity InGaP/ GaAs Heterojunction Bipolar Transistor HBT MMIC housed in a low-cost, surface-mountable plastic package. 5-2500 MHz Medium Power InGaP/GaAs HBT Amplifier	Original	SXB-2089Z SXB-2089Z AN075 EDS-104625 sot 23 S01 SXB-2089 TAJB105KLRH MCH185A1R8CK AN-078 43ACP	PDF
SHF-0189 Abstract: SHF-0289 AN-031 s-parameter file of SHF-0289 by Sirenza ML200C H H L C9 LL1608-FS6N8J amplifier shf MCH185A220J ef SOT-89 hfet Text: DESIGN APPLICATION NOTE - AN-031 SHF-0189 Amplifier Application Circuits Abstract Design Considerations and Trade-offs Sirenza Microdevices’ SHF-0189 is a high performance AlGaAs/GaAs Heterostructure FET HFET housed in a low-cost surface-mount plastic package. The HFET	Original	AN-031 SHF-0189 EAN-101798 SHF-0289 AN-031 s-parameter file of SHF-0289 by Sirenza ML200C H H L C9 LL1608-FS6N8J amplifier shf MCH185A220J ef SOT-89 hfet	PDF
MARKING RM* dbm sot89 Abstract: No abstract text available Text: SXB-2089Z Product Description Sirenza Microdevices’ SXB-2089Z amplifier is a high linearity InGaP/ GaAs Heterojunction Bipolar Transistor HBT MMIC housed in a low-cost, surface-mountable plastic package. 5-2500 MHz Medium Power InGaP/GaAs HBT Amplifier	Original	SXB-2089Z SXB-2089Z 43dBm 24dBm AN075 EDS-104625 MARKING RM* dbm sot89	PDF
SGA8343z Abstract: SGA-8343Z CL10B104K MCR03*J100 MCR03J242 MCR03J620 MCR03J SOT343 lna ROHM TRACE CODE ROHM trace code of lot Text: SGA8343Z SGA8343ZLow Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to	Original	SGA8343ZLow SGA8343Z OT-343 SGA8343Z DS110620 SGA8343Z-EVB4 1575MHz SGA-8343Z CL10B104K MCR03*J100 MCR03J242 MCR03J620 MCR03J SOT343 lna ROHM TRACE CODE ROHM trace code of lot	PDF
SSG TRANSISTOR Abstract: cdi schematics pcb ap 6928 ACPR2 SSG 23 TRANSISTOR 2450 MHz low noise amplifier schematic Amplifier SOT-89 c4 ECG015 HP RF amplifier SOT-89 863300 Text: DATA SHEET ECG015 BROADBAND HIGH OIP3 AMPLIFIER 1800 - 2500 MHz Features Applications 1800 to 2500 MHz Highly Reliable InGaP HBT Excellent Stability Multi-carrier Systems High Linearity Amplifiers Cellular, PCS, WLL Package Available -B SOT-89	Original	ECG015 OT-89 ECG015 OT-89 AP-000145-000 ECG015: AP-000192-000 AP-000194-000 AP-000487-000 SSG TRANSISTOR cdi schematics pcb ap 6928 ACPR2 SSG 23 TRANSISTOR 2450 MHz low noise amplifier schematic Amplifier SOT-89 c4 HP RF amplifier SOT-89 863300	PDF

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MCH185A1R2C Price and Stock

ROHM Semiconductor MCH185A1R2CK

MCH185A1R2C Datasheets (1)

MCH185A1R2C Datasheets Context Search

Untitled

MCH185C332K

MCR03J102

MCH315A180J

mch185cn153k

SGA8343Z

Untitled

TAJB105KLRH

MCH185C122KK

CL10B104KONC

55117 inductor

MCH185A050c

ECG015B

MCR03*J102

SHF-0289

CL10B104KONC

SGA-8343Z

mch185C102kk

TAJB105KLRH

sot 23 S01

SHF-0189

MARKING RM* dbm sot89

SGA8343z

SSG TRANSISTOR